宽光谱监控电子束蒸发薄膜制备系统的研制与应用
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摘要
光学薄膜材料在人们的生活中变得日趋重要。光学薄膜的制备技术在近几十年来得到不断发展,而如何对薄膜的制备过程进行实时监测,以及如何通过监测干预制备过程使过程得到有序的控制,一直是人们所关注的课题。光学实时监控利用光学方法实时监控薄膜的制备过程,因其快速而不会伤害薄膜的特性而受到重视。宽光谱监控通过在一定的波长范围内实时测量和分析薄膜的特征光谱,在薄膜的生长过程中实时跟踪薄膜的各种光学特性的变化过程。它突破了传统的石英晶振监控和单波长监控其测量方法的单一性和局限性,并且能够根据所需的光学特性更有效地制备高质量、高性能的光学薄膜。宽光谱实时监控的研究对薄膜制备的发展具有重要意义。
本论文设计并实现了基于真空电子束蒸发的实时宽光谱监控薄膜制备系统。由于从实用性、通用性和可扩展性的角度设计了此系统,并使用新型近红外集成多光栅线阵/面阵CCD探测器式光谱仪和近红外宽光谱光源对薄膜制备过程进行监控,它不仅支持宽光谱监控自动生长薄膜材料,也兼容单波长监控自动生长薄膜材料,同时也能适应新的监控方法。
在此基础上,论文研究了宽光谱监控涉及的各种光谱分析算法,包括各种噪声过滤算法和薄膜生长进度分析算法,分析了这些算法的可行性和有效性。
为了验证系统的可靠性和各宽光谱监控算法的可行性,使用此宽光谱监控薄膜制备系统制备了λ/4膜系的薄膜。
最后,使用Z扫描测量技术测量了用SiOx/SiO2超晶格制备方法制备的尺寸可控的硅纳米晶的非线性光学性质,分析了量子限制效应对于硅纳米晶的非线性光学性质的影响。
Optical thin films have been playing a more and more important role in the daily life of the humankind. As a result, the manufacturing technology of optical thin films has rapidly evolved in the past few decades. One of the most significant contributions to the evolvement is the development of in-situ optical monitoring technologies. Broadband optical monitoring features in-situ measurement of the transmittance or reflectance of the optical thin film being prepared in a wide spectral range. It allows online spectral analysis and real-time tracing of various optical properties of the target sample, which are both significant advantages compared to traditionally methods such as the turning point method.
In this thesis, a broadband optical monitoring (BOM) system has been designed and constructed for an electron beam evaporation system. It features in-situ monitoring of the transmittance spectrum of the target sample and automatic feedback control of the electron beam evaporation system. Due to its modular structure, the BOM system is very extensive and can be adapted to new monitoring methods. Several algorithms of spectral analysis have been implemented for the BOM system to trace the deposition progress of the target sample. And quarter-wave structures have been prepared using the BOM system to verify its capabilities. In addition, the nonlinear optical properties of Si nanocrystals prepared using a SiOx/SiO2 superlattice approach has been investigated.
本论文设计并实现了基于真空电子束蒸发的实时宽光谱监控薄膜制备系统。由于从实用性、通用性和可扩展性的角度设计了此系统,并使用新型近红外集成多光栅线阵/面阵CCD探测器式光谱仪和近红外宽光谱光源对薄膜制备过程进行监控,它不仅支持宽光谱监控自动生长薄膜材料,也兼容单波长监控自动生长薄膜材料,同时也能适应新的监控方法。
在此基础上,论文研究了宽光谱监控涉及的各种光谱分析算法,包括各种噪声过滤算法和薄膜生长进度分析算法,分析了这些算法的可行性和有效性。
为了验证系统的可靠性和各宽光谱监控算法的可行性,使用此宽光谱监控薄膜制备系统制备了λ/4膜系的薄膜。
最后,使用Z扫描测量技术测量了用SiOx/SiO2超晶格制备方法制备的尺寸可控的硅纳米晶的非线性光学性质,分析了量子限制效应对于硅纳米晶的非线性光学性质的影响。
Optical thin films have been playing a more and more important role in the daily life of the humankind. As a result, the manufacturing technology of optical thin films has rapidly evolved in the past few decades. One of the most significant contributions to the evolvement is the development of in-situ optical monitoring technologies. Broadband optical monitoring features in-situ measurement of the transmittance or reflectance of the optical thin film being prepared in a wide spectral range. It allows online spectral analysis and real-time tracing of various optical properties of the target sample, which are both significant advantages compared to traditionally methods such as the turning point method.
In this thesis, a broadband optical monitoring (BOM) system has been designed and constructed for an electron beam evaporation system. It features in-situ monitoring of the transmittance spectrum of the target sample and automatic feedback control of the electron beam evaporation system. Due to its modular structure, the BOM system is very extensive and can be adapted to new monitoring methods. Several algorithms of spectral analysis have been implemented for the BOM system to trace the deposition progress of the target sample. And quarter-wave structures have been prepared using the BOM system to verify its capabilities. In addition, the nonlinear optical properties of Si nanocrystals prepared using a SiOx/SiO2 superlattice approach has been investigated.
引文
[1]M. Banning. Practical methods of making and using multilayer filters [J]. Journal of the optical society of America,1947,37(10):792-797
[2]H. A. Macleod. Monitoring of optical coatings [J]. Applied Optics,1981,20(1): 82-89
[3]H. D. Polster. A symmetrical all-dielectric interference filter [J]. Applied Optics, 1952,42(1):21-24
[4]V. Daneu. Optical thickness monitor for thin film deposition [J]. Applied Optics, 1975,14(4):962-969
[5]B. Bobbs, J. E. Rudisill. Optical monitoring of nonquarterwave film thicknesses using a turning point method [J].1987,26(15):3136-3139
[6]C. Grezes-Besset, F. Chazallet, G. Albrand, E. Pelletier. Synthesis and research of the optimum conditions for the optical monitoring of non-quarter-wave multilayers [J]. Applied Optics,1993,32(28):5612-5618
[7]B. Vidal, A. Fornier, E. Pelletier. Optical monitoring of nonquarterwave multilayer filters [J]. Applied Optics,1978,17(7):1038-1047
[8]B. Vidal, A. Fornier, E. Pelletier. Wideband optical monitoring of nonquarterwave multilayer filters [J]. Applied Optics 1979,18(22):3851-3856
[9]B. Vidal, E. Pelletier. Nonquarterwave multilayer filters:optical monitoring with a minicomputer allowing correction of thickness errors [J]. Applied Optics,1979, 18(22):3857-3862
[10]J. P. Borgogno, P. Bousquet, F. Flory, B. Lazarides, E. Pelletier, P. Roche. Inhomogeneity in films:limitation of the accuracy of optical monitoring of thin films [J]. Applied Optics,1981,20(1):90-94
[11]L. Li, Y. Yen. Wideband monitoring and measuring system for optical coatings [J]. Applied Optics,1989,28(14),2889-2894
[12]B. Badoil, F. Lemarchand, M. Cathelinaud, M. Lequime. Interest of broadband optical monitoring for thin-film filter manufacturing [J]. Applied Optics,2007, 46(20):4294-4303
[13]V. G. Zhupanov, E. V. Klyuev, S. V. Alekseev. I. V. Kozlov, M. K. Trubetskov, M. A. Kokarev, and A. V. Tikhonravov. Indirect broadband optical monitoring with multiple witness substrates [J]. Applied Optics.2009,48(12):2315-2320
[14]A. V. Tikhonravov, M. K. Trubetskov, T. V. Amotchkina. Investigation of the effect of accumulation of thickness errors in optical coating production by broadband optical monitoring [J]. Applied Optics,2006,45(27):7026-7034
[15]A. V. Tikhonravov, M. K. Trubetskov, T. V. Amotchkina. Investigation of the error self-compensation effect associated with broadband optical monitoring [J]. Applied Optics,2011,50(9):C111-C116
[16]D. Ristau, H. Ehlers, T. Gross, M. Lappschies. Optical broadband monitoring of conventional and ion processes [J]. Applied Optics,2006,45(7),1495-1501
[17]M. Lappschies, B. Gortz, D. Ristau. Application of optical broadband monitoring of quasi-rugate filters by ion-beam sputtering [J]. Applied Optics,2006,45(7), 1502-1506
[18]S. Wilbrandt, N. Kaiser, O. Stenzel. In-situ broadband monitoring of heterogenous optical coatings [J]. Thin Solid Films,2006,502:153-157
[19]B. Badoil, F. Lemarchand, M. Cathelinaud, F. Lemarquis, M. Lequime. Direct monitoring of broadband light absorbers [J]. Optics Communication 2008,281: 2367-2373
[20]B. Dadoil, F. Lemarchand, M. Cathelinaud, M. Lequime. Manufacturing of an absorbing filter controlled by a broadband optical monitoring [J]. Optics Express, 2008,16(16):12008-12017
[21]唐晋发,顾培夫,刘旭,李海峰.现代光学薄膜技术[M].杭州：浙江大学出版社,2006：5-33,193-227
[22]王兆义.可编程控制器教程,第二版[M].北京：机械工业出版社,2005：1-21
[23]孙同景,陈桂友.PLC原理及工程应用[M].北京：机械工业出版社,2008：1-22
[24]三菱电机.FX系列可编程控制器用户手册[通信篇][M].上海：三菱电机自动化(上海)有限公司,2006：D1.D80
[25]T. Han, W. M. Ni, P. Zhou, H. Y. You, J. H. Jia, S. Y. Wang, L. Y. Chen, D. W. Lynch. A new spectrometer using multiple gratings with a two-dimensional charge-coupled diode array detector [J]. Review of Scientific Instruments.2003, 74(6):2973-2976
[26]T. Han, Y. H. Wu, J. K. Chen, Y. F. Kong, Y. R. Chen, B. Sun, C. H Xu, P. Zhou, J. H. Qiu, Y. X. Zheng, J. Miao, L. Y. Chen. Study of a high-resolution infrared spectrometer by using an integrated multigrating structure [J]. Review of Scientific Instruments,2005,76(8):083118
[27]M. H. Liu, S. X. Pan, Y. R. Chen, Y. F. Wu, Q. Y. Cai, P. H. Mao, Y. X. Zheng, L. Y. Chen. Path-folded infrared spectrometer consisting of 10 sub-gratings and a two-dimensional InGaAs detector [J]. Optics Express,2009,17(17): 14956-19466
[28]Y. F. Wu, Q. Y. Cai, Y. X. Zheng, R. J. Zhang, L. Y. Chen. Application of a high-resolution spectrometer in a broadband optical monitor for film coating [J]. Journal of the Korean Physical Society,2008,53(4):2307-2311
[29]付小宁,牛建军,陈靖.光电探测技术与系统[M].北京：电子工业出版社,2010： 102-104
[30]Max Born, Emil Wolf. Principles of Optics:Electromagnetic Theory of Propagation, Interference and Diffraction of Light, Seventh (Expanded) Edition [M]. Britain:Cambridge University Press,1999:54-74
[31]B. T. Sullivan, J. A. Dobrowolski. Deposition error compensation for optical multilayer coatings. I. theoretical description [J]. Applied Optics,1992,31(19): 3821-3835
[32]张荣君,陈一鸣,郑玉祥,陈良尧.硅发光研究与进展[J].中国激光,2009,36(2)： 269-275
[33]R. J. Zhang, Y. M. Chen, W. J. Lu, Q. Y. Cai, Y. X. Zheng, L. Y. Chen. Influence of nanocrystal size on dielectric functions of Si nanocrystals embedded in SiO2 matrix [J]. Applied Physical Letters,2009,95(16):161109
[34]Z. Yuan, A. Anopchenko, N. Daldosso, R. Guider, D. Navarro-Urrios, A. Pitanti, R. Spano, L. Pavesi. Silicon nanocrystals as an enabling material for silicon photonics [J]. Proceedings of the IEEE,2009,97(7),1250-1268
[35]S. Vijayalakshmi, F. Shen, H. Grehel. Artificial dielectrics:nonlinear optical properties of silicon nanoclusters atλ=532 nm [J]. Applied Physics Letters,1997, 71(23):3332-3334
[36]S. Vijayalakshmi, H. Grebel, Z. Iqbal, C. W. White. Artificial dielectrics: nonlinear properties of Si nanoclusters formed by ion implantation in SiO2 glassy matrix [J]. Journal of Applied Physics,1998,84(12):6502-6506
[37]S. Vijayalakshmi, H. Grebel, G. Yaglioglu, R. Pino, R. Dorsinville, C. W. White. Nonlinear optical response of Si nanostructures in a silica matrix [J]. Journal of Applied Physics,2000,88(11):6418-6422
[38]G. Vijaya. Prakash, M. Cazzanelli, Z. Gaburro, L. Pavesi, F. Iacona, G. Franzo, F. Priolo. Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition [J]. Journal of Applied Physics 2002, 91(7):4607-4610
[39]S. Hernandez, P. Pellegrino, A. Martinez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, J. M. Fedeli. Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by plasma-enhanced chemical-vapor deposition [J]. Journal of Applied Physics,2008,103(6):064309
[40]R. Spano, N. Daldosso, M. Cazzanelli, L. Ferraioli, L. Tartara, J. Yu, V. Degiorgio, E. Jordana, J. M. Fedeli, L. Pavesi. Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm [J]. Optics Express,2009,17(5): 3941-3950
[41]A. Martinez, S. Hernandez, Y. Lebour, P. Pellegrino, E. Jordana, J. M. Fedeli, B. Garrido. Two-photon absorption in Si-nanocrystals deposited by plasma-enhanced chemical-vapor deposition [J]. Physica E,2009,41:1002-1005
[42]K. Imakita, M Ito, M. Fujii, S. Hayashi. Nonlinear optical properties of Si nanocrystals embedded in SiO2 prepared by a cosputtering method [J]. Journal of Applied Physics,2009,105(9):093531
[43]M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, J. Biasing. Size-controlled highly luminescent silicon nanocrystals:A SiO/SiO2 superlattice approach [J]. Applied Physical Letters,2002,80(4):661-663
[44]M. Sheik-Bahae, A. A. Said, T. H. Wei, D. J. Hagan, E. W. Van Stryland. Sensitive measurement of optical nonlinearities using a single beam [J]. IEEE Journal of Quantum Electronics,1990,26(4):760-769
[45]K. Ogusu, K. Shinkawa. Optical nonlinearities in silicon for pulse durations of the order of nanoseconds at 1.06 μm [J]. Optics Express,2008,16(19): 14780-14971
[46]M. Dinu, F. Quochi, H. Garcia. Third-order nonlinearities in silicon at telecom wavelengths [J]. Applied Physics Letters,2003,82(18),2954-2956
[47]Q. Lin, J. Zhang, G. Piredda, R. W. Boyd, P. M. Fauchet, G. P. Agrawal. Dispersion of silicon nonlinearities in the near infrared region [J]. Applied Physics Letters,2007,91(2):021111
[2]H. A. Macleod. Monitoring of optical coatings [J]. Applied Optics,1981,20(1): 82-89
[3]H. D. Polster. A symmetrical all-dielectric interference filter [J]. Applied Optics, 1952,42(1):21-24
[4]V. Daneu. Optical thickness monitor for thin film deposition [J]. Applied Optics, 1975,14(4):962-969
[5]B. Bobbs, J. E. Rudisill. Optical monitoring of nonquarterwave film thicknesses using a turning point method [J].1987,26(15):3136-3139
[6]C. Grezes-Besset, F. Chazallet, G. Albrand, E. Pelletier. Synthesis and research of the optimum conditions for the optical monitoring of non-quarter-wave multilayers [J]. Applied Optics,1993,32(28):5612-5618
[7]B. Vidal, A. Fornier, E. Pelletier. Optical monitoring of nonquarterwave multilayer filters [J]. Applied Optics,1978,17(7):1038-1047
[8]B. Vidal, A. Fornier, E. Pelletier. Wideband optical monitoring of nonquarterwave multilayer filters [J]. Applied Optics 1979,18(22):3851-3856
[9]B. Vidal, E. Pelletier. Nonquarterwave multilayer filters:optical monitoring with a minicomputer allowing correction of thickness errors [J]. Applied Optics,1979, 18(22):3857-3862
[10]J. P. Borgogno, P. Bousquet, F. Flory, B. Lazarides, E. Pelletier, P. Roche. Inhomogeneity in films:limitation of the accuracy of optical monitoring of thin films [J]. Applied Optics,1981,20(1):90-94
[11]L. Li, Y. Yen. Wideband monitoring and measuring system for optical coatings [J]. Applied Optics,1989,28(14),2889-2894
[12]B. Badoil, F. Lemarchand, M. Cathelinaud, M. Lequime. Interest of broadband optical monitoring for thin-film filter manufacturing [J]. Applied Optics,2007, 46(20):4294-4303
[13]V. G. Zhupanov, E. V. Klyuev, S. V. Alekseev. I. V. Kozlov, M. K. Trubetskov, M. A. Kokarev, and A. V. Tikhonravov. Indirect broadband optical monitoring with multiple witness substrates [J]. Applied Optics.2009,48(12):2315-2320
[14]A. V. Tikhonravov, M. K. Trubetskov, T. V. Amotchkina. Investigation of the effect of accumulation of thickness errors in optical coating production by broadband optical monitoring [J]. Applied Optics,2006,45(27):7026-7034
[15]A. V. Tikhonravov, M. K. Trubetskov, T. V. Amotchkina. Investigation of the error self-compensation effect associated with broadband optical monitoring [J]. Applied Optics,2011,50(9):C111-C116
[16]D. Ristau, H. Ehlers, T. Gross, M. Lappschies. Optical broadband monitoring of conventional and ion processes [J]. Applied Optics,2006,45(7),1495-1501
[17]M. Lappschies, B. Gortz, D. Ristau. Application of optical broadband monitoring of quasi-rugate filters by ion-beam sputtering [J]. Applied Optics,2006,45(7), 1502-1506
[18]S. Wilbrandt, N. Kaiser, O. Stenzel. In-situ broadband monitoring of heterogenous optical coatings [J]. Thin Solid Films,2006,502:153-157
[19]B. Badoil, F. Lemarchand, M. Cathelinaud, F. Lemarquis, M. Lequime. Direct monitoring of broadband light absorbers [J]. Optics Communication 2008,281: 2367-2373
[20]B. Dadoil, F. Lemarchand, M. Cathelinaud, M. Lequime. Manufacturing of an absorbing filter controlled by a broadband optical monitoring [J]. Optics Express, 2008,16(16):12008-12017
[21]唐晋发,顾培夫,刘旭,李海峰.现代光学薄膜技术[M].杭州：浙江大学出版社,2006：5-33,193-227
[22]王兆义.可编程控制器教程,第二版[M].北京：机械工业出版社,2005：1-21
[23]孙同景,陈桂友.PLC原理及工程应用[M].北京：机械工业出版社,2008：1-22
[24]三菱电机.FX系列可编程控制器用户手册[通信篇][M].上海：三菱电机自动化(上海)有限公司,2006：D1.D80
[25]T. Han, W. M. Ni, P. Zhou, H. Y. You, J. H. Jia, S. Y. Wang, L. Y. Chen, D. W. Lynch. A new spectrometer using multiple gratings with a two-dimensional charge-coupled diode array detector [J]. Review of Scientific Instruments.2003, 74(6):2973-2976
[26]T. Han, Y. H. Wu, J. K. Chen, Y. F. Kong, Y. R. Chen, B. Sun, C. H Xu, P. Zhou, J. H. Qiu, Y. X. Zheng, J. Miao, L. Y. Chen. Study of a high-resolution infrared spectrometer by using an integrated multigrating structure [J]. Review of Scientific Instruments,2005,76(8):083118
[27]M. H. Liu, S. X. Pan, Y. R. Chen, Y. F. Wu, Q. Y. Cai, P. H. Mao, Y. X. Zheng, L. Y. Chen. Path-folded infrared spectrometer consisting of 10 sub-gratings and a two-dimensional InGaAs detector [J]. Optics Express,2009,17(17): 14956-19466
[28]Y. F. Wu, Q. Y. Cai, Y. X. Zheng, R. J. Zhang, L. Y. Chen. Application of a high-resolution spectrometer in a broadband optical monitor for film coating [J]. Journal of the Korean Physical Society,2008,53(4):2307-2311
[29]付小宁,牛建军,陈靖.光电探测技术与系统[M].北京：电子工业出版社,2010： 102-104
[30]Max Born, Emil Wolf. Principles of Optics:Electromagnetic Theory of Propagation, Interference and Diffraction of Light, Seventh (Expanded) Edition [M]. Britain:Cambridge University Press,1999:54-74
[31]B. T. Sullivan, J. A. Dobrowolski. Deposition error compensation for optical multilayer coatings. I. theoretical description [J]. Applied Optics,1992,31(19): 3821-3835
[32]张荣君,陈一鸣,郑玉祥,陈良尧.硅发光研究与进展[J].中国激光,2009,36(2)： 269-275
[33]R. J. Zhang, Y. M. Chen, W. J. Lu, Q. Y. Cai, Y. X. Zheng, L. Y. Chen. Influence of nanocrystal size on dielectric functions of Si nanocrystals embedded in SiO2 matrix [J]. Applied Physical Letters,2009,95(16):161109
[34]Z. Yuan, A. Anopchenko, N. Daldosso, R. Guider, D. Navarro-Urrios, A. Pitanti, R. Spano, L. Pavesi. Silicon nanocrystals as an enabling material for silicon photonics [J]. Proceedings of the IEEE,2009,97(7),1250-1268
[35]S. Vijayalakshmi, F. Shen, H. Grehel. Artificial dielectrics:nonlinear optical properties of silicon nanoclusters atλ=532 nm [J]. Applied Physics Letters,1997, 71(23):3332-3334
[36]S. Vijayalakshmi, H. Grebel, Z. Iqbal, C. W. White. Artificial dielectrics: nonlinear properties of Si nanoclusters formed by ion implantation in SiO2 glassy matrix [J]. Journal of Applied Physics,1998,84(12):6502-6506
[37]S. Vijayalakshmi, H. Grebel, G. Yaglioglu, R. Pino, R. Dorsinville, C. W. White. Nonlinear optical response of Si nanostructures in a silica matrix [J]. Journal of Applied Physics,2000,88(11):6418-6422
[38]G. Vijaya. Prakash, M. Cazzanelli, Z. Gaburro, L. Pavesi, F. Iacona, G. Franzo, F. Priolo. Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition [J]. Journal of Applied Physics 2002, 91(7):4607-4610
[39]S. Hernandez, P. Pellegrino, A. Martinez, Y. Lebour, B. Garrido, R. Spano, M. Cazzanelli, N. Daldosso, L. Pavesi, E. Jordana, J. M. Fedeli. Linear and nonlinear optical properties of Si nanocrystals in SiO2 deposited by plasma-enhanced chemical-vapor deposition [J]. Journal of Applied Physics,2008,103(6):064309
[40]R. Spano, N. Daldosso, M. Cazzanelli, L. Ferraioli, L. Tartara, J. Yu, V. Degiorgio, E. Jordana, J. M. Fedeli, L. Pavesi. Bound electronic and free carrier nonlinearities in Silicon nanocrystals at 1550nm [J]. Optics Express,2009,17(5): 3941-3950
[41]A. Martinez, S. Hernandez, Y. Lebour, P. Pellegrino, E. Jordana, J. M. Fedeli, B. Garrido. Two-photon absorption in Si-nanocrystals deposited by plasma-enhanced chemical-vapor deposition [J]. Physica E,2009,41:1002-1005
[42]K. Imakita, M Ito, M. Fujii, S. Hayashi. Nonlinear optical properties of Si nanocrystals embedded in SiO2 prepared by a cosputtering method [J]. Journal of Applied Physics,2009,105(9):093531
[43]M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, J. Biasing. Size-controlled highly luminescent silicon nanocrystals:A SiO/SiO2 superlattice approach [J]. Applied Physical Letters,2002,80(4):661-663
[44]M. Sheik-Bahae, A. A. Said, T. H. Wei, D. J. Hagan, E. W. Van Stryland. Sensitive measurement of optical nonlinearities using a single beam [J]. IEEE Journal of Quantum Electronics,1990,26(4):760-769
[45]K. Ogusu, K. Shinkawa. Optical nonlinearities in silicon for pulse durations of the order of nanoseconds at 1.06 μm [J]. Optics Express,2008,16(19): 14780-14971
[46]M. Dinu, F. Quochi, H. Garcia. Third-order nonlinearities in silicon at telecom wavelengths [J]. Applied Physics Letters,2003,82(18),2954-2956
[47]Q. Lin, J. Zhang, G. Piredda, R. W. Boyd, P. M. Fauchet, G. P. Agrawal. Dispersion of silicon nonlinearities in the near infrared region [J]. Applied Physics Letters,2007,91(2):021111