薄膜集成磁件结构拓扑优化与制备工艺研究
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摘要
磁性器件的集成是推进电子系统小型化的重要途径之一,同时有效的磁集成技术可以降低磁性器件的损耗,提高电子系统整机效率。将薄膜制备技术、MEMS工艺技术和磁集成技术结合在一起制备集成磁件是磁性器件未来发展的必由之路。本文深入系统地研究了基于交错并联Buck变换器的薄膜阵列式集成磁件结构方案,并利用有限元分析软件进行了优化分析,为低损耗集成磁件的设计提供了技术支持;研究了采用真空磁控溅射技术制备的FeCuNbSiB和FeCoV磁性薄膜样品,制备的薄膜样品采用X射线衍射仪(XRD)观察了晶体结构,用场发射扫描电子显微镜(FE-SEM)观察沉积后的薄膜的断面结构和表面形态,采用X射线能量色散谱(EDX)分析样品的成份,采用VSM测试样品的静态磁性能,测试结果表明FeCuNbSiB薄膜的各项指标要优于FeCoV薄膜;利用MEMS技术和磁控溅射技术制备了FeCuNbSiB薄膜的一种阵列式集成磁件,给出了制备工艺流程,为其他方案的磁性器件制备提供了技术支持。
Magnetic integration is one important way to advance miniaturization of electronic systems, while the effective integration of magnetic can reduce the magnetic loss and improve the efficiency of electronic system machine. Combination of the thin film technology, MEMS process technology and magnetic integrated technology to produce an integrated magnetic, which is the only way for the future development of magnetic devices. This paper study the program of the Buck converter based on staggered parallel array of thin film integrated magnetic structure, and to use finite element analysis software to optimize the analysis, which provide technical support to the design of low-loss integrated magnetic; research the samples of magnetic thin film FeCuNbSiB and FeCoV created by vacuum magnetron sputtering. The crystal structure of samples was observed by using X-ray diffraction (XRD), Observation of deposited films after the cross-section structure and surface morphology by field emission scanning electron microscopy (FE-SEM), analysis of the sample composition by X-ray energy dispersive spectroscopy (EDX), using VSM test the static magnetic properties of sample. Test results show that the indicators of FeCuNbSiB film is superior to FeCoV film; using MEMS technology and magnetron sputtering technology to produce a kind of Array Integrated Magnetics, which constituted by the FeCuNbSiB. And give manufacturing process. And provide technical support to other programs of magnetic devices manufacturing.
Magnetic integration is one important way to advance miniaturization of electronic systems, while the effective integration of magnetic can reduce the magnetic loss and improve the efficiency of electronic system machine. Combination of the thin film technology, MEMS process technology and magnetic integrated technology to produce an integrated magnetic, which is the only way for the future development of magnetic devices. This paper study the program of the Buck converter based on staggered parallel array of thin film integrated magnetic structure, and to use finite element analysis software to optimize the analysis, which provide technical support to the design of low-loss integrated magnetic; research the samples of magnetic thin film FeCuNbSiB and FeCoV created by vacuum magnetron sputtering. The crystal structure of samples was observed by using X-ray diffraction (XRD), Observation of deposited films after the cross-section structure and surface morphology by field emission scanning electron microscopy (FE-SEM), analysis of the sample composition by X-ray energy dispersive spectroscopy (EDX), using VSM test the static magnetic properties of sample. Test results show that the indicators of FeCuNbSiB film is superior to FeCoV film; using MEMS technology and magnetron sputtering technology to produce a kind of Array Integrated Magnetics, which constituted by the FeCuNbSiB. And give manufacturing process. And provide technical support to other programs of magnetic devices manufacturing.
引文
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[3]黄庆安译,Chang Liu著.微机电系统基础[M].北京:机械工业出版社,2007.9.
[4]唐伟忠.薄膜材料制备原理、技术及应用[M].北京:冶金工业出版社,1998.
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[8]敖育红,胡少六,龙华,等.[J].激光技术,2003,10,27(5):453~459.
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[17]姜燮昌.大面积反应溅射技术的最新进展及应用[J].真空,2002,3:1~9.
[18]杨邦朝,崔红玲.溅射靶材的制备与应用[J].真空,2001,3:11~15.
[19]张青来,贺继弘.溅射靶材综述[J].上海钢研,2002,4:30~41.
[20]李雯.三维MEMS射频电感的研究:[硕士学位论文].清华大学微电子学研究所,2003.
[21]陈忠民.高Q值RF-MEMS平面电感的研究:[硕士学位论文].清华大学微电子学研究所,2004.
[22] Chia-Hsin Wu,Chih-Chun tang,Shen-luan Liu.Analysis of on-chip spiral inductorsusing the distributed capacitance model[J]. IEEE journal of solid-state circuits,2003,38(6):1040~1044.
[23] Hasnain Lakdawala,Xu Zhu,Hao Luo,et al.Micromachined high Q inductors in a 0.18um copper interconnect low-K dielectric CMOS process[J]. IEEE Journal of Solid-State Circuits,2002,37(3):394~401.
[24] Yim S M,et al.The effects of a ground shield on the characteristics and performance of spiral inductors[J]. IEEE J.solid-state circuits,Feb.2002,37(2):237~244.
[25] Joachim N.Burghartz.On the design of RF spiral inductors on silicon[J]. IEEE transactions on electron devices,2003,50(3):718~729.
[26] Yong-Kyu Yoon,Jin-Woo Park,and Mark G.Allen.RF-MEMS based on epoxy-core conductors.Hiltonhead,2002:374~375.
[27]刘锋.射频集成磁膜微电感的制备与性能研究:[博士学位论文].华中科技大学.2005.
[28]顾磊.高性能MEMS射频无源器件与三维硅微机械加工技术: :[博士学位论文].中国科学院上海微系统与信息技术研究所.2007.
[29]韩建强,朱长纯,袁寿财,刘君华,卢文科.一种中心频率可调节的高Q值微机械带通滤波器初探.西安交通大学学报,2003,37(2):136~139.
[30]张榕.溅射参数对FeSiAl薄膜磁性能的影响[J].上海海事大学学报,2004,25(4):89~93.
[31]蒋向东,张怀武,文歧业等.非晶Co2Nb2Zr薄膜的纳米晶化及磁性[J].真空科学与技术学报,2005,25(1):37~41.
[32]李晓红,杨正.Fe-Ni合金薄膜的结构和磁性[J].物理学报,2004,53(5):1510~1515.
[33]李晶,陈世柱,李芝华.冷等静压-烧结法制备ITO磁控溅射靶材的工艺研究[J].稀有金属与硬质合金,2003,31(4):18~21.
[34]王晓浩.微型机电系统.清华大学微米纳米技术研究中心.
[35]李德胜.MEMS技术及其应用.哈尔滨工业大学出版社.2002.1.1~345.
[36]徐泰然著.王晓浩等译. MEMS和微机电系统设计与制造.机械工业出版社.2004.1.1~35.
[37] Michael.Qurik.J.Serda著韩郑生等译.半导体制造技术.电子工业出版社.2004.1.20~30.
[38]石旺舟,梁锐生,马学鸣等.溅射功率对FeSiBNbCu薄膜微结构与磁性的影响[J].物理学报,2004,53(10):3614~3618.
[39]白宣羽,汪渊,徐可为.Cu-Zr/ZrN薄膜体系的电阻率和纳米压入研究[J].稀有金属材料与工程,2005,34(2):259~262.
[40]约翰逊,罗伯特.A.机械滤波器.机械滤波器技术协会《电讯技术》编辑部.2000.1~254.
[41]师汉民.机械振动系统:分析·测试·建模·对策(上,下册).华中科技大学出版社2004.
[42]章吉良,杨春生.微机电系统及其相关技术.上海交通大学出版社.2000.1 p1~307.[45]石庚辰.微机电系统技术.国防工业出版社.2002.1.p230~254.
[43] Kaigham J.Gabriel.Microelectrome chanical Systems(MEMS) Tutorial. International testconfe-rence 1998.p124~129.
[44]张威,张大成,王阳元,MEMS概况及发展趋势,微纳电子技术,2002(1):p22~27.
[45]林泽伟,董显平,吴建生.Cr-Si-Al薄膜微观结构及电阻率分析[J].上海交通大学学报,2003,37(12):1969~1974.
[46]张玉勤,董显平,吴建生.(Cr-Si-Ni)/Si薄膜的微观结构和电阻率[J].中国有色金属学报,2005,15(5):746~750.
[2] G.B.Crouse,Electirical Filter.U.S.Patent 1,920,948(August 1,1933).
[3]黄庆安译,Chang Liu著.微机电系统基础[M].北京:机械工业出版社,2007.9.
[4]唐伟忠.薄膜材料制备原理、技术及应用[M].北京:冶金工业出版社,1998.
[5] Nimai Chand Pramanik, Tatsuo Fujii, Makoto Nakanishi,et al. [J]. Mater Lett, 2004, 59: 468~472.
[6]黄煜梅,李佐宜,刘卫忠,等. [J].功能材料, 1996,27(2):161~163.
[7]李凤生,杨毅,马振叶,等纳米功能复合材料及应用[M].北京:国防工业出版社,2003
[8]敖育红,胡少六,龙华,等.[J].激光技术,2003,10,27(5):453~459.
[9] Zhang X Y,Ong C K,Xu S Y,et al.[J]. Magn MagnMater, 1998, 190:171~175.
[10] K.Yamasawa K.Maruyama.High frequency operation of a plannar-type mierotransfor Mer and its application to multilayers switehing.Regulator[J]. IEEE Trans.Magn. 1992,28(4):197~1979.
[11] M.Mino,T.Yaehi. Microtransformers with monolithically integrated rectifier diodes for micoswitching converters[J]. 24ndAnn. Power Eleetron Spee. Con. Jun.1993:503~508.
[12] L.Asharf, R.B.Van Dover, L.Sehneemeyer. Miero-Transformers Deviees Using Thin-Film Eleetro Plated Deposition[J].Power Electronics Specialists Conference. 1998:1511~1515.
[13] K.Yamaguehi,E.Sugawara,0.Nakajima,Load characteristics of a spiral coil type thin film Micro-transformer[J]. IEEE Trans. Magn. 1993,29(6):3207~3209.
[14] M.Mino,T.Yaehi,K.Yanagisawa, A new planar microtransformer for use in microswitching converters[J] .IEEE Trans. Magn.1992,28(4):1969~1971.
[15] T.Sato,H.Tomita,A magnetic thin film inductor and its application to MHz switching dc-dc converter[J]. IEEE Trans. Magn. 1994,30(2):217~223.
[16]杨邦朝,胡永达,崔红玲.溅射靶材的应用和发展趋势[J].真空, 2002,2:l~4.
[17]姜燮昌.大面积反应溅射技术的最新进展及应用[J].真空,2002,3:1~9.
[18]杨邦朝,崔红玲.溅射靶材的制备与应用[J].真空,2001,3:11~15.
[19]张青来,贺继弘.溅射靶材综述[J].上海钢研,2002,4:30~41.
[20]李雯.三维MEMS射频电感的研究:[硕士学位论文].清华大学微电子学研究所,2003.
[21]陈忠民.高Q值RF-MEMS平面电感的研究:[硕士学位论文].清华大学微电子学研究所,2004.
[22] Chia-Hsin Wu,Chih-Chun tang,Shen-luan Liu.Analysis of on-chip spiral inductorsusing the distributed capacitance model[J]. IEEE journal of solid-state circuits,2003,38(6):1040~1044.
[23] Hasnain Lakdawala,Xu Zhu,Hao Luo,et al.Micromachined high Q inductors in a 0.18um copper interconnect low-K dielectric CMOS process[J]. IEEE Journal of Solid-State Circuits,2002,37(3):394~401.
[24] Yim S M,et al.The effects of a ground shield on the characteristics and performance of spiral inductors[J]. IEEE J.solid-state circuits,Feb.2002,37(2):237~244.
[25] Joachim N.Burghartz.On the design of RF spiral inductors on silicon[J]. IEEE transactions on electron devices,2003,50(3):718~729.
[26] Yong-Kyu Yoon,Jin-Woo Park,and Mark G.Allen.RF-MEMS based on epoxy-core conductors.Hiltonhead,2002:374~375.
[27]刘锋.射频集成磁膜微电感的制备与性能研究:[博士学位论文].华中科技大学.2005.
[28]顾磊.高性能MEMS射频无源器件与三维硅微机械加工技术: :[博士学位论文].中国科学院上海微系统与信息技术研究所.2007.
[29]韩建强,朱长纯,袁寿财,刘君华,卢文科.一种中心频率可调节的高Q值微机械带通滤波器初探.西安交通大学学报,2003,37(2):136~139.
[30]张榕.溅射参数对FeSiAl薄膜磁性能的影响[J].上海海事大学学报,2004,25(4):89~93.
[31]蒋向东,张怀武,文歧业等.非晶Co2Nb2Zr薄膜的纳米晶化及磁性[J].真空科学与技术学报,2005,25(1):37~41.
[32]李晓红,杨正.Fe-Ni合金薄膜的结构和磁性[J].物理学报,2004,53(5):1510~1515.
[33]李晶,陈世柱,李芝华.冷等静压-烧结法制备ITO磁控溅射靶材的工艺研究[J].稀有金属与硬质合金,2003,31(4):18~21.
[34]王晓浩.微型机电系统.清华大学微米纳米技术研究中心.
[35]李德胜.MEMS技术及其应用.哈尔滨工业大学出版社.2002.1.1~345.
[36]徐泰然著.王晓浩等译. MEMS和微机电系统设计与制造.机械工业出版社.2004.1.1~35.
[37] Michael.Qurik.J.Serda著韩郑生等译.半导体制造技术.电子工业出版社.2004.1.20~30.
[38]石旺舟,梁锐生,马学鸣等.溅射功率对FeSiBNbCu薄膜微结构与磁性的影响[J].物理学报,2004,53(10):3614~3618.
[39]白宣羽,汪渊,徐可为.Cu-Zr/ZrN薄膜体系的电阻率和纳米压入研究[J].稀有金属材料与工程,2005,34(2):259~262.
[40]约翰逊,罗伯特.A.机械滤波器.机械滤波器技术协会《电讯技术》编辑部.2000.1~254.
[41]师汉民.机械振动系统:分析·测试·建模·对策(上,下册).华中科技大学出版社2004.
[42]章吉良,杨春生.微机电系统及其相关技术.上海交通大学出版社.2000.1 p1~307.[45]石庚辰.微机电系统技术.国防工业出版社.2002.1.p230~254.
[43] Kaigham J.Gabriel.Microelectrome chanical Systems(MEMS) Tutorial. International testconfe-rence 1998.p124~129.
[44]张威,张大成,王阳元,MEMS概况及发展趋势,微纳电子技术,2002(1):p22~27.
[45]林泽伟,董显平,吴建生.Cr-Si-Al薄膜微观结构及电阻率分析[J].上海交通大学学报,2003,37(12):1969~1974.
[46]张玉勤,董显平,吴建生.(Cr-Si-Ni)/Si薄膜的微观结构和电阻率[J].中国有色金属学报,2005,15(5):746~750.