PVD和CVD过程中等离子体物理特性混合模拟及实验研究
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摘要
基于等离子体技术的物理气相沉积(Physical Vapour Deposition, PVD)和化学气相沉积(Chemical Vapour Deposition, CVD)是目前低温制备薄膜材料最常用的方法,等离子体的物理特性对薄膜沉积速率和薄膜质量有直接影响。本文针对FJL560CI1型超高真空磁控与离子束联合溅射镀膜机和RF-500型化学气相沉积镀膜机,建立了容性放电等离子体的混合模型,包括波尔兹曼方程,一维流体动力学模型和MC模型,并对Ar等离子体和CH4等离子体进行了求解。另外,设计制作了朗缪尔探针、法拉第探针和法拉第离子能量分析器,对Ar等离子体进行了实验测试,并对混合模型模拟结果进行对比验证。
通过求解利用Lorentz近似方法简化的波尔兹曼方程分别对直流稳态电场和射偏电场下Ar等离子体中电子的能量及其分布特性进行了模拟计算,结果表明,在高电场时电子能量呈直线形式的Maxwellian分布,而在低电场时呈类似抛物线的Druyvesteyn分布,放电压力对电子能量分布形式的影响不明显。汤生放电时,电子平均能量最大值约为11eV,电子电离率系数随电子平均能量的升高逐渐增大,最大电离率系数在10-14m3s-1量级。放电压力为27Pa时,电子的迁移率系数和扩散率系数分别为μe≈107m2V-1s-1,De≈690m2s-1.射频放电时,电子平均能量和电离率系数的变化规律与汤生放电相同,但电子输运系数呈明显的时空不均匀分布。朗缪尔探针的测试结果表明,强电场时电子能量呈Maxwellian分布,随着放电功率的增大或放电压力的升高,电子平均能量均逐渐减小。
通过求解一维流体动力学模型对射频容性Ar等离子体的特性进行了模拟计算,结果表明,在ωt≈π/2时刻接地极板附近和ωt≈3π/2时刻电源极板附近的鞘层区域,电场强度较高,鞘层厚度最小,电子平均能量和电子反应的电离率系数也较高,电子密度周期变化剧烈,而离子密度相对稳定。随着放电压力升高,等离子体密度增大,鞘层厚度逐渐减小；随着放电电压增大,等离子体密度增大,鞘层厚度逐渐增大；随着自偏压增大,等离子体密度减小,鞘层厚度逐渐增大。用法拉第探针以电流密度的形式测试了等离子体密度,结果表明随着放电压力升高或放电电压增大,离子电流密度增大,亦即等离子体密度增大,与流体动力学模型的计算结果相同,也证明了该模型的正确性。
通过MC模型对射频容性Ar等离子体中离子入射的能量及其分布特性进行了模拟计算,结果表明,放电压力低时,高能量离子分布较多,且在高能区域分布曲线呈双峰形式,离子入射的角度较小；放电压力高时,低能量离子分布较多,能量分布曲线偏向于低能量区域,且高能峰消失,离子入射角度增大；放电电压升高,离子能量分布曲线向高能区域移动,能峰之间的距离变长,角度分布曲线向小角度区域移动；随着自偏压升高,入射离子的能量增大,能量分布曲线向高能量区域移动,能峰间距变化不大,离子入射角度减小。法拉第离子能量分析器的测试结果表明,低放电压力时,离子能量较高且在高能区域呈双峰形式,高放电压力时,离子能量较低且能量分布高能峰消失。
根据CH4等离子体中电子的化学反应将波尔兹曼方程扩展,并对射频容性CH4等离子体进行了模拟计算,结果表明,CH4等离子体中电子能量分布规律与Ar等离子体相同,即在高电场时呈Maxwellian分布,而在低电场时呈Druyvesteyn分布。电子反应的电离率系数和分裂率系数之和均在10-14m3s-1量级,放电压力为18Pa时电子的输运系数μe≈600m2V-1s-1,De≈1300m2s-1。
根据CH4等离子体中电子、离子、激发态粒子的化学反应将第三章的流体动力学模型扩展,并对射频容性CH4等离子体进行了模拟计算,结果表明,CH4等离子体中电势／电场、等离子体密度的时空分布规律与Ar等离子体相同,激发态粒子空间变化不明显；CH3、C2H5、C2H5+、CH5+是CH4等离子体中的主导粒子,对基片上薄膜的生长有主要贡献。
The plasma-induced physical-vapour deposition (PVD) and physical-vapour deposition (CVD) are the most common methods used for the deposition of thin film materials. Deposition rate of the film and the quality are determined directly by discharge parameters, such as density, ion energy, electric field, etc. Based on the FJL560CI1ultrahigh vacuum magnetron and ion-beam sputtering coating machine and the RF-500CVD coating machine, a hybrid model, including Boltzman Equation, hydrokinetics model and Monte Carlo model, is developed. The model is used to investigate the characteristic of Ar plasma and CH4plasma. Otherwise, Langmuir probe, Faraday probe and Faraday ion energy analyzer plasma diagnostic system are developed to measure the plasma parameters in the two coating machines, and the comparison with simulation result is carried out.
The electron energy distribution function (EEDF) in Ar plasma is computed by numerically solving the Boltzmann equation simplified by Lorentz approximation. In a high electric field, the EEDF is observed to be Maxwellian shape, while in a low electric field, a Druyvesteyn-like EEDF is observed, the gas pressure has little effect on the shape of EEDF. In a Townsend discharge, the electron average energy is no more than10eV, and the ionization rate coefficient increases with the increase of electron average energy and the maximum coefficient is in the order of10-14m3s-1. At the pressure of27Pa, the electron transport coefficients (mobility and diffusion) are found to be μe≈107m2V-1s-1and De≈690m2s-1. In an rf discharge, the electron average energy and the ion rate coefficient are similar to the Townsend discharge, and the electron transport coefficients depend strongly on both time and space. The plasma parameters are investigated using a Langmuir probe plasma diagnostic system, and a Maxwellian EEPF is observed, which agrees well with the calculated result of Boltzmann equation. The electron average energy decreases with the increase of rf power or discharge pressure.
Parameters of an rf Ar plasma are computed by numerically solving the hydrokinetics model. It is found that, at the cycle of about ωt≈π/2near to the grounded electrode and ωt≈3π/2near to the powered electrode the electric filed is strong, together with high electron average energy and ionization rate coefficient. The electron density varies tempestuously, but a time-stable ion density is found in this region. The plasma density increases and the sheath thickness decreases with the increase of discharge pressure, while both the plasma density and the sheath thickness increase with the increase of rf voltage, and the plasma density decrease and the sheath thickness increases with the increase of self-bias voltage. A Faraday probe plasma diagnostic system is developed to measure the plasma density in the way of ion current density, and the experimental result shows that as the increase of discharge pressure or rf voltage, the plasma density increases, which agrees well with the calculated result of the hydrokinetics model.
A hybrid model is developed to investigate the characteristics of energy and angular distributions of the ions impinging on the electrode in an rf capacitively coupled Ar plasma. It shows that the ion energy distribution (IED) is bimodal at high energy field, and the ion angle distribution (IAD) has a significant peak at the small angle region. As the increasing of gas pressure, the IEDs move to the low energy field, the high energy peak disappears and scattering angle of ions increases. The IEDs move to the high energy and the width between the peaks expands with the increase of rf voltage. High ion energy is obtained with the increase of self-bias voltage, and the IEDs move to the high energy field, but the distance between the two peaks changes little. A Faraday ion energy analyzer is developed to measure the IED in Ar plasma, and the experimental result shows a dual-peak IED at low discharge pressure and a single peak IED at high discharge pressure, which agrees well with the simulation result of the MC model.
The EEDF in an rf CH4plasma by numerically solving the Boltzmann equation, which is expanded according to the electron reactions in the CH4plasma. EEDF of CH4plasma similar to Ar plasma is found. The transport coefficients are calculated to be μe≈600m2V-1s-1and De≈1300m2s-1at the pressure of18Pa.
The hydrokinetics model, which is used in chapter3in Ar plasma, is expanded for CH4plasma according to the electron reactions, ion reactions and also the radical reactions. Characteristics of CH4plasma are calculated with the expanded model and the result shows that the spatiotemporal variations of potential/electric-field and plasma density are similar to an rf Ar plasma. Species of CH3, C2H5, C2H5+and CHs+are the dominant species in CH4plasma, which contribute to the growth of DLC film.
通过求解利用Lorentz近似方法简化的波尔兹曼方程分别对直流稳态电场和射偏电场下Ar等离子体中电子的能量及其分布特性进行了模拟计算,结果表明,在高电场时电子能量呈直线形式的Maxwellian分布,而在低电场时呈类似抛物线的Druyvesteyn分布,放电压力对电子能量分布形式的影响不明显。汤生放电时,电子平均能量最大值约为11eV,电子电离率系数随电子平均能量的升高逐渐增大,最大电离率系数在10-14m3s-1量级。放电压力为27Pa时,电子的迁移率系数和扩散率系数分别为μe≈107m2V-1s-1,De≈690m2s-1.射频放电时,电子平均能量和电离率系数的变化规律与汤生放电相同,但电子输运系数呈明显的时空不均匀分布。朗缪尔探针的测试结果表明,强电场时电子能量呈Maxwellian分布,随着放电功率的增大或放电压力的升高,电子平均能量均逐渐减小。
通过求解一维流体动力学模型对射频容性Ar等离子体的特性进行了模拟计算,结果表明,在ωt≈π/2时刻接地极板附近和ωt≈3π/2时刻电源极板附近的鞘层区域,电场强度较高,鞘层厚度最小,电子平均能量和电子反应的电离率系数也较高,电子密度周期变化剧烈,而离子密度相对稳定。随着放电压力升高,等离子体密度增大,鞘层厚度逐渐减小；随着放电电压增大,等离子体密度增大,鞘层厚度逐渐增大；随着自偏压增大,等离子体密度减小,鞘层厚度逐渐增大。用法拉第探针以电流密度的形式测试了等离子体密度,结果表明随着放电压力升高或放电电压增大,离子电流密度增大,亦即等离子体密度增大,与流体动力学模型的计算结果相同,也证明了该模型的正确性。
通过MC模型对射频容性Ar等离子体中离子入射的能量及其分布特性进行了模拟计算,结果表明,放电压力低时,高能量离子分布较多,且在高能区域分布曲线呈双峰形式,离子入射的角度较小；放电压力高时,低能量离子分布较多,能量分布曲线偏向于低能量区域,且高能峰消失,离子入射角度增大；放电电压升高,离子能量分布曲线向高能区域移动,能峰之间的距离变长,角度分布曲线向小角度区域移动；随着自偏压升高,入射离子的能量增大,能量分布曲线向高能量区域移动,能峰间距变化不大,离子入射角度减小。法拉第离子能量分析器的测试结果表明,低放电压力时,离子能量较高且在高能区域呈双峰形式,高放电压力时,离子能量较低且能量分布高能峰消失。
根据CH4等离子体中电子的化学反应将波尔兹曼方程扩展,并对射频容性CH4等离子体进行了模拟计算,结果表明,CH4等离子体中电子能量分布规律与Ar等离子体相同,即在高电场时呈Maxwellian分布,而在低电场时呈Druyvesteyn分布。电子反应的电离率系数和分裂率系数之和均在10-14m3s-1量级,放电压力为18Pa时电子的输运系数μe≈600m2V-1s-1,De≈1300m2s-1。
根据CH4等离子体中电子、离子、激发态粒子的化学反应将第三章的流体动力学模型扩展,并对射频容性CH4等离子体进行了模拟计算,结果表明,CH4等离子体中电势／电场、等离子体密度的时空分布规律与Ar等离子体相同,激发态粒子空间变化不明显；CH3、C2H5、C2H5+、CH5+是CH4等离子体中的主导粒子,对基片上薄膜的生长有主要贡献。
The plasma-induced physical-vapour deposition (PVD) and physical-vapour deposition (CVD) are the most common methods used for the deposition of thin film materials. Deposition rate of the film and the quality are determined directly by discharge parameters, such as density, ion energy, electric field, etc. Based on the FJL560CI1ultrahigh vacuum magnetron and ion-beam sputtering coating machine and the RF-500CVD coating machine, a hybrid model, including Boltzman Equation, hydrokinetics model and Monte Carlo model, is developed. The model is used to investigate the characteristic of Ar plasma and CH4plasma. Otherwise, Langmuir probe, Faraday probe and Faraday ion energy analyzer plasma diagnostic system are developed to measure the plasma parameters in the two coating machines, and the comparison with simulation result is carried out.
The electron energy distribution function (EEDF) in Ar plasma is computed by numerically solving the Boltzmann equation simplified by Lorentz approximation. In a high electric field, the EEDF is observed to be Maxwellian shape, while in a low electric field, a Druyvesteyn-like EEDF is observed, the gas pressure has little effect on the shape of EEDF. In a Townsend discharge, the electron average energy is no more than10eV, and the ionization rate coefficient increases with the increase of electron average energy and the maximum coefficient is in the order of10-14m3s-1. At the pressure of27Pa, the electron transport coefficients (mobility and diffusion) are found to be μe≈107m2V-1s-1and De≈690m2s-1. In an rf discharge, the electron average energy and the ion rate coefficient are similar to the Townsend discharge, and the electron transport coefficients depend strongly on both time and space. The plasma parameters are investigated using a Langmuir probe plasma diagnostic system, and a Maxwellian EEPF is observed, which agrees well with the calculated result of Boltzmann equation. The electron average energy decreases with the increase of rf power or discharge pressure.
Parameters of an rf Ar plasma are computed by numerically solving the hydrokinetics model. It is found that, at the cycle of about ωt≈π/2near to the grounded electrode and ωt≈3π/2near to the powered electrode the electric filed is strong, together with high electron average energy and ionization rate coefficient. The electron density varies tempestuously, but a time-stable ion density is found in this region. The plasma density increases and the sheath thickness decreases with the increase of discharge pressure, while both the plasma density and the sheath thickness increase with the increase of rf voltage, and the plasma density decrease and the sheath thickness increases with the increase of self-bias voltage. A Faraday probe plasma diagnostic system is developed to measure the plasma density in the way of ion current density, and the experimental result shows that as the increase of discharge pressure or rf voltage, the plasma density increases, which agrees well with the calculated result of the hydrokinetics model.
A hybrid model is developed to investigate the characteristics of energy and angular distributions of the ions impinging on the electrode in an rf capacitively coupled Ar plasma. It shows that the ion energy distribution (IED) is bimodal at high energy field, and the ion angle distribution (IAD) has a significant peak at the small angle region. As the increasing of gas pressure, the IEDs move to the low energy field, the high energy peak disappears and scattering angle of ions increases. The IEDs move to the high energy and the width between the peaks expands with the increase of rf voltage. High ion energy is obtained with the increase of self-bias voltage, and the IEDs move to the high energy field, but the distance between the two peaks changes little. A Faraday ion energy analyzer is developed to measure the IED in Ar plasma, and the experimental result shows a dual-peak IED at low discharge pressure and a single peak IED at high discharge pressure, which agrees well with the simulation result of the MC model.
The EEDF in an rf CH4plasma by numerically solving the Boltzmann equation, which is expanded according to the electron reactions in the CH4plasma. EEDF of CH4plasma similar to Ar plasma is found. The transport coefficients are calculated to be μe≈600m2V-1s-1and De≈1300m2s-1at the pressure of18Pa.
The hydrokinetics model, which is used in chapter3in Ar plasma, is expanded for CH4plasma according to the electron reactions, ion reactions and also the radical reactions. Characteristics of CH4plasma are calculated with the expanded model and the result shows that the spatiotemporal variations of potential/electric-field and plasma density are similar to an rf Ar plasma. Species of CH3, C2H5, C2H5+and CHs+are the dominant species in CH4plasma, which contribute to the growth of DLC film.
引文
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