新型微纳光电探测器模型及其特性分析
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摘要
Ⅲ-Ⅴ族量子阱红外探测器(QWIP)、雪崩光电探测器(APD)、谐振腔增强探测器(RCE-PD)光电导器件在不同的应用领域发挥重要的作用。在研究中,理论计算与仿真是指导实验的便捷路径,也是检验实验的方式之一,具有不可或缺的意义。本论文通过对以上三种器件进行理论仿真和分析研究,着重对器件的等效电路模型,同类型器件的比较,器件材料结构的优化分析等方面进行了研究。主要内容如下:
1.对Al_xGa_(1-x)As/GaAs与In_xGa_(1-x)As/GaAs两种材料体系的QWIP进行理论计算与分析。采用APSYS软件分别对两种材料体系吸收波谱进行对比,并结合等效电路模型,考察它们对甚长波段的探测。结果表明相同结构情况下InGaAs/GaAs比AlGaAs/GaAs QWI的吸收率更高,Al_(0.15)Ga_(0.85)As/GaAs与In_(0.15)Ga_(0.85)As/GaAs量子阱器件对15μm响应波长,后者的响应率、量子效率明显高于前者。另外,探索仿真了THz Al_(0.05)Ga_(0.95)As/GaAs QWIP的部分性能,在50K温度时,仿真结果与实验值取得了较好的吻合。
2.关于InGaAsP/InP APD探测的仿真研究。针对双电荷层SACM-APD改变InGaAsP电荷层中P组分优化异质结构,结果表明InGaAsP材料中P组分比在0～30%之间,低偏压下具有较好的漏电流抑制作用。此外,比较分析了相同材料与尺寸的双电荷层SACM与SAGCM结构的InGaAs/InP APD,仿真结果表明,引入渐变层结构可以降低暗电流(低偏压下),并且提高增益。并且,依据得出的仿真结果,降低电荷层、倍增层厚度,渐变层高掺杂等方式,设计了一个低偏压高增益的APD器件,为高性能APD器件的设计提供有效依据。
3.从理论原理上阐述了影响RCE-PD器件性能的主要参数。对器件量子效率等参数进行研究。着重考虑了两底端分布布拉格反射镜(DBR)材料的设计及反射镜对数对谐振腔反射率的影响。此外,针对RCE-PIN-PD器件的内在寄生效应与外加电阻电感等进行了适当的分析。特别对瞬态时间响应受寄生电阻、吸收层厚度、寄生电感以及探测器面积等的影响进行了讨论,对实际器件应用有一定的指导意义。
The devices of Quantum well infrared photodetectors(QWIP),Avalanche photodetectors(APD)and Resonant cavity enhanced photodiodes(RCE-PD)which baseⅢ-Ⅴmaterials are very important for different application field.In those investigations,theoretical calculation may be a good way for directing the experiment for proving the results of experiment.In a word,the theory research by simulation has an important sense for scientific research.In this paper,the three devices mentioned above have been investigated.The models of devices,the comparison between the same type devices but different structure or materials and the optimization have been investigated principally.The main content shows as follows:
1.Based Al_xGa_(1-x)As/GaAs and In_xGa_(1-x)As/GaAs material system QWIP characteristics calculated in this paper,APSYS software be employed in simulation, the absorption spectrums of theirs have compared.The simulation results show that In_xGa_(1-x)As/GaAs QWIP has higher absorption coefficient at very long wavelength.A reasonable circuit model was set up for Al_(0.15)Ga_(0.85)As/GaAs and In_(0.15)Ga_(0.85)As/GaAs QWIPs.Bias dependence of the dark current,photocurrent and responsivity is accurately described by the model in Spice,The result demonstrated that the responsivity and quantum efficiency of In_(0.15)Ga_(0.85)As/GaAs QWIP are better than Al_(0.15)Ga_(0.85)As/GaAs QWIP's.In addition,THz QWIPs with the structure Al_(0.05)Ga_(0.95)As/GaAs also be simulated,there is a good result agree with experiment at 50K.
2.The InGaAsP/InP APD simulate.Apsys software can be used for simulations of the material bandgap,electric field,the dark current and photo current and so on.The performance of InGaAs/InP avalanche photodiode(APD)which have a thin sectional charge layer has studied.By change the P percent in InGaAsP charge layer,the heterostructure can get optimization,when the P element percent changed between 0 and 30 would obtain appropriate SACM APD structure and a lower leakage current. Simulation demonstrated that at the same condition SAGCM structure may has better characteristics than SACM,the lower leakage current and higher gain could get in SAGCM APD,that is option the thin charge layer,thin multiplication layer,and the grading layer with high doping.
3.The primary principle of RCE-PD has been demonstrated for example Distribute Bragg Reflection mirror(DBR),the materials choosing,thickness,different periods DBR.Especially the quantum efficiency performance of device investigated mainly.
1.对Al_xGa_(1-x)As/GaAs与In_xGa_(1-x)As/GaAs两种材料体系的QWIP进行理论计算与分析。采用APSYS软件分别对两种材料体系吸收波谱进行对比,并结合等效电路模型,考察它们对甚长波段的探测。结果表明相同结构情况下InGaAs/GaAs比AlGaAs/GaAs QWI的吸收率更高,Al_(0.15)Ga_(0.85)As/GaAs与In_(0.15)Ga_(0.85)As/GaAs量子阱器件对15μm响应波长,后者的响应率、量子效率明显高于前者。另外,探索仿真了THz Al_(0.05)Ga_(0.95)As/GaAs QWIP的部分性能,在50K温度时,仿真结果与实验值取得了较好的吻合。
2.关于InGaAsP/InP APD探测的仿真研究。针对双电荷层SACM-APD改变InGaAsP电荷层中P组分优化异质结构,结果表明InGaAsP材料中P组分比在0～30%之间,低偏压下具有较好的漏电流抑制作用。此外,比较分析了相同材料与尺寸的双电荷层SACM与SAGCM结构的InGaAs/InP APD,仿真结果表明,引入渐变层结构可以降低暗电流(低偏压下),并且提高增益。并且,依据得出的仿真结果,降低电荷层、倍增层厚度,渐变层高掺杂等方式,设计了一个低偏压高增益的APD器件,为高性能APD器件的设计提供有效依据。
3.从理论原理上阐述了影响RCE-PD器件性能的主要参数。对器件量子效率等参数进行研究。着重考虑了两底端分布布拉格反射镜(DBR)材料的设计及反射镜对数对谐振腔反射率的影响。此外,针对RCE-PIN-PD器件的内在寄生效应与外加电阻电感等进行了适当的分析。特别对瞬态时间响应受寄生电阻、吸收层厚度、寄生电感以及探测器面积等的影响进行了讨论,对实际器件应用有一定的指导意义。
The devices of Quantum well infrared photodetectors(QWIP),Avalanche photodetectors(APD)and Resonant cavity enhanced photodiodes(RCE-PD)which baseⅢ-Ⅴmaterials are very important for different application field.In those investigations,theoretical calculation may be a good way for directing the experiment for proving the results of experiment.In a word,the theory research by simulation has an important sense for scientific research.In this paper,the three devices mentioned above have been investigated.The models of devices,the comparison between the same type devices but different structure or materials and the optimization have been investigated principally.The main content shows as follows:
1.Based Al_xGa_(1-x)As/GaAs and In_xGa_(1-x)As/GaAs material system QWIP characteristics calculated in this paper,APSYS software be employed in simulation, the absorption spectrums of theirs have compared.The simulation results show that In_xGa_(1-x)As/GaAs QWIP has higher absorption coefficient at very long wavelength.A reasonable circuit model was set up for Al_(0.15)Ga_(0.85)As/GaAs and In_(0.15)Ga_(0.85)As/GaAs QWIPs.Bias dependence of the dark current,photocurrent and responsivity is accurately described by the model in Spice,The result demonstrated that the responsivity and quantum efficiency of In_(0.15)Ga_(0.85)As/GaAs QWIP are better than Al_(0.15)Ga_(0.85)As/GaAs QWIP's.In addition,THz QWIPs with the structure Al_(0.05)Ga_(0.95)As/GaAs also be simulated,there is a good result agree with experiment at 50K.
2.The InGaAsP/InP APD simulate.Apsys software can be used for simulations of the material bandgap,electric field,the dark current and photo current and so on.The performance of InGaAs/InP avalanche photodiode(APD)which have a thin sectional charge layer has studied.By change the P percent in InGaAsP charge layer,the heterostructure can get optimization,when the P element percent changed between 0 and 30 would obtain appropriate SACM APD structure and a lower leakage current. Simulation demonstrated that at the same condition SAGCM structure may has better characteristics than SACM,the lower leakage current and higher gain could get in SAGCM APD,that is option the thin charge layer,thin multiplication layer,and the grading layer with high doping.
3.The primary principle of RCE-PD has been demonstrated for example Distribute Bragg Reflection mirror(DBR),the materials choosing,thickness,different periods DBR.Especially the quantum efficiency performance of device investigated mainly.
引文
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