GaAs/InP、Si/GaAs异质外延生长技术及其在集成光电子器件中的应用
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摘要
人类通信需求量的急剧增长是光纤通信系统发展的潜在驱动力,而新一代光纤通信系统的发展必然要以新型通信光电子器件作为支撑。当前通信光电子器件正处于由分立转向集成的重大变革时期,而通信光电子集成器件研究所面临的最突出问题是半导体材料兼容、结构兼容和工艺兼容。
本论文对大失配异质外延技术进行了探讨和部分成果总结,并完成了以下几个方面的工作:
1、在GaAs/InP的异质外延生长方面,利用低压金属有机物化学气相沉积(LP-MOCVD)技术,探索了InP低温缓冲层的最佳生长条件和结构参数,在GaAs衬底上外延生长出高质量的InP材料。
2、制备了单片集成GaAs基长波长谐振腔光探测器。它通过两步生长法,在GaAs基上异质外延生长了InP-InGaAs-InP的p-i-n光吸收结构和GaAs/AlAs的分布布拉格反射镜(DBR)。所制备的器件在1549.4 nm处获得了67.3%的量子效率和17nm的光谱相应线宽,同时InGaAs吸收层厚度仅为200 nm。
3、在Si/GaAs外延方面取得进展。通过探索有偏角衬底、AlGaAs低温缓冲层和循环热退火等技术的最优条件,在Si衬底上外延生长出了高质量的GaAs材料,并摸索出了一种GaAs层分两个阶段生长、中间插入刻槽工序(mid-pattern)的Si/GaAs无裂纹外延方法。
The increasing demand for communication is the driving force behind modern fiber communication systems,which is always based on novel optoelectronic devices.It is the revolutionary period that independent optoelectronic devices are changing into integrated devices,but this revolution has been encountered by several challenges,such as the compatibilities of semiconductor materials,structures and processes.
In this thesis we summed up the heteroepitaxy technology of large mismatched materials,and the other main research work is listed below:
1.Important progress has been achieved on GaAs/InP heteroepitaxy.The optimum conditions of low temperature InP buffer layer has been obtained.Based on these methods,high quality InP epilayer has been grown on GaAs substrates by using low pressure metalorganic chemical vapor deposition(LP-MOCVD).
2.The monolithically integrated long wavelength resonant-cavity -enhanced photodetector has been realized,by using heteroepitaxy growth between InP-InGaAs-InP p-i-n structure and GaAs/AlAs distributed Bragg reflectors(DBR).High quality heterepitaxy was realized by two-step growth.An external quantum efficiency of 67.3%at 1549.4 nm was obtained in the device with an InGaAs absorption layer thickness of 200 nm.
3.Important progress has been achieved on Si/GaAs heteroepitaxy. High-quality GaAs epilayer is obtained by employing the technologies of the tilted Si substrate,optimization the low temperature AlGaAs buffer layer and thermal cycle annealing.Also,a method of GaAs epilayer grown on mid-patterned Si subatrates has been demonstrated.
本论文对大失配异质外延技术进行了探讨和部分成果总结,并完成了以下几个方面的工作:
1、在GaAs/InP的异质外延生长方面,利用低压金属有机物化学气相沉积(LP-MOCVD)技术,探索了InP低温缓冲层的最佳生长条件和结构参数,在GaAs衬底上外延生长出高质量的InP材料。
2、制备了单片集成GaAs基长波长谐振腔光探测器。它通过两步生长法,在GaAs基上异质外延生长了InP-InGaAs-InP的p-i-n光吸收结构和GaAs/AlAs的分布布拉格反射镜(DBR)。所制备的器件在1549.4 nm处获得了67.3%的量子效率和17nm的光谱相应线宽,同时InGaAs吸收层厚度仅为200 nm。
3、在Si/GaAs外延方面取得进展。通过探索有偏角衬底、AlGaAs低温缓冲层和循环热退火等技术的最优条件,在Si衬底上外延生长出了高质量的GaAs材料,并摸索出了一种GaAs层分两个阶段生长、中间插入刻槽工序(mid-pattern)的Si/GaAs无裂纹外延方法。
The increasing demand for communication is the driving force behind modern fiber communication systems,which is always based on novel optoelectronic devices.It is the revolutionary period that independent optoelectronic devices are changing into integrated devices,but this revolution has been encountered by several challenges,such as the compatibilities of semiconductor materials,structures and processes.
In this thesis we summed up the heteroepitaxy technology of large mismatched materials,and the other main research work is listed below:
1.Important progress has been achieved on GaAs/InP heteroepitaxy.The optimum conditions of low temperature InP buffer layer has been obtained.Based on these methods,high quality InP epilayer has been grown on GaAs substrates by using low pressure metalorganic chemical vapor deposition(LP-MOCVD).
2.The monolithically integrated long wavelength resonant-cavity -enhanced photodetector has been realized,by using heteroepitaxy growth between InP-InGaAs-InP p-i-n structure and GaAs/AlAs distributed Bragg reflectors(DBR).High quality heterepitaxy was realized by two-step growth.An external quantum efficiency of 67.3%at 1549.4 nm was obtained in the device with an InGaAs absorption layer thickness of 200 nm.
3.Important progress has been achieved on Si/GaAs heteroepitaxy. High-quality GaAs epilayer is obtained by employing the technologies of the tilted Si substrate,optimization the low temperature AlGaAs buffer layer and thermal cycle annealing.Also,a method of GaAs epilayer grown on mid-patterned Si subatrates has been demonstrated.
引文
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