电场辅助离子交换波导的研究
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摘要
渐变折射率光波导是光通信和集成光电子学领域中的关键元件之一。目前,已有多种成熟的工业技术,特别是扩散、离子交换和离子注入等技术,可以制备低损耗的渐变折射率光波导。在光放大器、激光器、通信器件、传感器、分束器及其他器件中,渐变型光波导已获得了愈来愈广泛的应用。而K离子交换制备渐变折射率波导因其损耗小,成本低,备受人们关注。
本文主要面向用于生产玻璃波导的电场辅助K离子交换技术的研究和实验。文章首先较为全面的介绍了离子交换理论。包括平板波导线光学模型,电磁场理论以及离子交换的机理,产生折射率变化的原因。然后再较为详细介绍一些基本数学分析方法基础上推导出离子交换波导的折射率分布理论模型。
本文的实验工作主要集中在新的电场辅助交换装置方面。本文对电场辅助下K~+离子交换的波导制备方法进行了研究。传统电场辅助K~+离子交换方法须用到硅胶粘合玻璃与交换容器,受制于粘合材料温度限制,只能采用低温加热K~+混合物,得到的折射率变化较小。本文中新的制备方法通过在玻璃片上镀金膜构成电极,交换温度控制在350 OC,并使用纯KNO_3为熔盐,通过电场辅助用普通载玻片制成了损耗为0.61dB/cm的多模光波导。通过对银离子交换和电场辅助钾离子交换所制成的波导片进行比较,进一步说明采用电场辅助K~+离子交换是制备低损耗、多模、低成本光波导的重要方法。
With the development of integrated optics, people have paid more attention to the graded-index optical waveguides formed by ion exchange, diffusion, and other techniques owing to its wide applications in optical amplifier, laser, communication, sensor, power division, and other related areas. K~+ ion exchange with the help of an electric field attract more and more concern due to the small loss and low cost.
In the paper, it is focused on researches and experiments of K~+ ion exchange with the help of an electric field. Firstly, it introduced the fundamental theories of ion exchange thoroughly, including planar waveguide theories, and the principle resulting in the refractive index change. Then on the base of some essential mathematical methods in analyzing ion exchange waveguide, the theoretical model of the refractive index founded.
This report focuses on research into waveguide prepared by K~+ ion exchange with the electric field assistance, in order to get well transported wave guide. Because the temperature limitation of agglutinate material, in traditional method, chemical mixture with K~+ was heated up in low temperature and small change of refractive index was gotten. In new method, adopting pure KNO_3, normal glass is exchanged in 350 OC with the electric field assistance and becomes the multimode waveguide whose loss is 0.61dB/cm. By compared K~+ ion exchange with the electric field assistance with Ag+ ion exchange, it is shown that K~+ ion exchange with the help of an electric field is the important method to produce small loss, multimode and low cost waveguide.
本文主要面向用于生产玻璃波导的电场辅助K离子交换技术的研究和实验。文章首先较为全面的介绍了离子交换理论。包括平板波导线光学模型,电磁场理论以及离子交换的机理,产生折射率变化的原因。然后再较为详细介绍一些基本数学分析方法基础上推导出离子交换波导的折射率分布理论模型。
本文的实验工作主要集中在新的电场辅助交换装置方面。本文对电场辅助下K~+离子交换的波导制备方法进行了研究。传统电场辅助K~+离子交换方法须用到硅胶粘合玻璃与交换容器,受制于粘合材料温度限制,只能采用低温加热K~+混合物,得到的折射率变化较小。本文中新的制备方法通过在玻璃片上镀金膜构成电极,交换温度控制在350 OC,并使用纯KNO_3为熔盐,通过电场辅助用普通载玻片制成了损耗为0.61dB/cm的多模光波导。通过对银离子交换和电场辅助钾离子交换所制成的波导片进行比较,进一步说明采用电场辅助K~+离子交换是制备低损耗、多模、低成本光波导的重要方法。
With the development of integrated optics, people have paid more attention to the graded-index optical waveguides formed by ion exchange, diffusion, and other techniques owing to its wide applications in optical amplifier, laser, communication, sensor, power division, and other related areas. K~+ ion exchange with the help of an electric field attract more and more concern due to the small loss and low cost.
In the paper, it is focused on researches and experiments of K~+ ion exchange with the help of an electric field. Firstly, it introduced the fundamental theories of ion exchange thoroughly, including planar waveguide theories, and the principle resulting in the refractive index change. Then on the base of some essential mathematical methods in analyzing ion exchange waveguide, the theoretical model of the refractive index founded.
This report focuses on research into waveguide prepared by K~+ ion exchange with the electric field assistance, in order to get well transported wave guide. Because the temperature limitation of agglutinate material, in traditional method, chemical mixture with K~+ was heated up in low temperature and small change of refractive index was gotten. In new method, adopting pure KNO_3, normal glass is exchanged in 350 OC with the electric field assistance and becomes the multimode waveguide whose loss is 0.61dB/cm. By compared K~+ ion exchange with the electric field assistance with Ag+ ion exchange, it is shown that K~+ ion exchange with the help of an electric field is the important method to produce small loss, multimode and low cost waveguide.
引文
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[8] T. Miya, Y. Terunuma, T. Hosaka, and T. Miyashita, ”An ultimately Low-loss single-mode fiber at 1.55 μ m”, Electron Lett., Vol. 15, pp. 106, 1979.
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[14] T. Yamamoto, K. Sakai, S. Akiba and Y. Suematsu, “Fast pulse behaviour of GaInAsP/InP double-hetero structure diode laser emitting at 1.27 μ m”, Electron. Lett., Vol. 13, pp. 142, 1977.
[15] Y. Itaya Y. Suematsu and K. Iga. ”Carrier lifetime measurement of GaInAsP/InP double-hetero structure lasers”, Japan J. Appl. Phys., Vol.16, pp.1057-1058, 1977.
[16] S. Akiba, K. Sakai, Y. Matsushima and T. yamamoto, “Room-temperature C.W. operation of InGaAsP/InP heterostructure lasers emitting at 1.56 μ m”, Electron. Lett., Vol. 15, pp. 606, 1979.
[17] H. Kawaguchi, T. Takahei, Y. Toyoshima, H. Nagai and G. Iwane, “Room-temperature C. W. Operation of InP/InGaAsP/InP double heterostructure diode lasers emitting at 1.55 μ m”, Electron. Lett., Vol. 15, pp. 669, 1979.
[18] K. Utaka, K. Kobayashi, K.Kishino and Y. Suematsu, “1.5-1.6 μ m GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors”, Electron. Lett., Vol. 16, pp. 455, 1980.
[19] T. P. Pearsall, B. I. Miller, R. J. Capik and K. J. Bachmann, ”Efficient lattice-matched double-heterostructure LEDs at 1.1 μ m from GaxIn1-xAsyP1-y”, Appl. Phys. Lett., Vol. 28, pp.449, 1976.
[20] N. Nagai and Y. Noguchi, “InP/ GaAsP/InP double heterostructure LED’s at the 1.1 μ m wavelength region”, IOCC ’77 Tokyo, B 2-2,1977.
[21] H. Melchior and W. T. Lynth, “Singnal and Noise response of high speed germanium avalanche photo-diode”, IEEE Trans. Eletron. Devices, Vol. ED-13, pp.829, 1966.
[22] H. Ando, H. Kanbe, T.Kimura, T. Yamaoka and T. Kaneda, “Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 μ m”, IEEE J. Quantum Electorn., Vol. QE-14, pp. 804, 1978.
[23] R. J. Mears, L. Reekie, and I. M. Jauncey, et al., “Low-noise Erbium-doped fiber amplifier operating at 1.54 μ m,” Electron. Lett, Vol. 23, pp. 1026, 1987.
[24] E. Desurvire, J. R. Simpson, and P. C. Becker, “High-gain Erbium-doped traveling-wave fiber amplifier,” Opt. Lett., Vol. 12, pp. 888, 1987.
[25] F. K. Reinhart, R. A. Logan, “GaAs-AlGaAs double heterostructure lasers with taper-coupled passive waveguides”, Appl. Phys. Lett., Vol. 26, pp. 516, 1975.
[26] K. Iga and B. I. Miller, “GaInAsP/InP laser with monolithically integrated monitoring detector”, Electron. Lett., Vol. 16, pp. 342, 1980.
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