带电粒子辐照带盖片GaAs/Ge太阳电池性能退化规律及机理
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摘要
本论文通过地面模拟空间环境实验,研究了质子、电子、质子加电子综合辐照对航天器上带盖片的GaAs/Ge太阳电池的辐照损伤效应,并通过暗特性分析,光照下伏安特性分析,揭示了辐照后太阳电池电性能参数的变化规律;利用光谱响应、光学反射率等测试手段研究了带盖片的GaAs/Ge太阳电池辐照前后微观结构和性能的变化,分析了不同辐照类型与不同粒子注量对GaAs/Ge太阳电池的损伤规律与导致性能退化的原因。
SRIM和CASINO对GaAs/Ge太阳电池模拟结果表明:170keV的电子在电池中的入射深度达到了基区;1MeV电子穿透了整个电池,高能量剩余区在结区和衬底。电子入射深度远大于同能量质子,随着能量增加,入射深度增加,对电池的损伤增大。
研究结果表明:170keV电子入射到PN结区,对电池的影响主要是电离效应。随着注量增加,低能电子辐照对盖片反射率影响不大,使光谱响应的短波段较明显衰降,电性能参数的总体衰减趋势为Pmax>Isc>Voc>FF。低能电子电离效应损伤主要是在窗口层和发射区(P区)。1MeV电子穿透整个电池,其对电池的损伤是电离加位移作用,它对电池电性能衰降,按严重程度排列依次是Pmax>Isc>FF>Voc。电子辐照后电池室温放置一段时间后发生退火效应,性能回复。
暗特性研究结果表明:不同类型不同注量的辐照均使GaAs/Ge太阳电池串联电阻Rs增加和并联电阻Rsh减小;能量越高,注量越大,则作用程度越大。
低能综合辐照的协同效应对电池电性能,玻璃盖片反射率,量子效率的影响整体表现为相互减弱。
On the basis of ground-based simulation for space irradiation environment, investigate the damage effect of the proton and electron single irradiation and co-irradiation on the GaAs/Ge solar cells with cover-glass. Dark I-V characteristic curve and I-V characteristic curve under solar simulator were studied to find how the cell parameters to change after irradiatinon. Spectral response, optical reflectance ratio et al was also investigated to get the change of inner-structure and property of solar cells, and the reason of property degradation induced by different irradiation types and different fluence of particles.
By the results of SRIM and CASINO, we found that the incident depth of 170keV electron in cell is far more than that of proton and arrived at base region of solar cell. The depth of 1MeV incident electron is very deep which reach Ge substrate. The greater the energy of particles, the deeper the incident depth, and the greater the damage on the cells.
The results show that, 170keV electron arrived at PN region, and they produce damage mainly through ionization effect. With the increase of radiation fluence, low energy electron have little effect on reflection ratio, but make the quantum efficiency decrease in the short wave band distinctly. Attenuation trend of cell electronic parameters after 170keV electron irradiation is Pmax>Isc>Voc>FF, and that after 1MeV electron irradiation is Pmax>Isc>FF>Voc.
The damage effect of 1MeV electron on solar cell are ionization effect and displacement effect. The property of GaAs/Ge solar cells after irradiation were restored after some days because of anneal effect.
The results of dark I-V characteristics show that, all kinds of irradiation and different fluences make the resistance in series Rs larger, and the parallel resistance smaller, and with the increase of energy and fluence, there effects are more greater.
The integrated irradiation results show that, the effect of integrated irradiation on GaAs/Ge solar cells is not equal to the value of proton irradiation adding electronic irradiation, and synergistic effect is obvious. And there are some discusses in this thesis.
SRIM和CASINO对GaAs/Ge太阳电池模拟结果表明:170keV的电子在电池中的入射深度达到了基区;1MeV电子穿透了整个电池,高能量剩余区在结区和衬底。电子入射深度远大于同能量质子,随着能量增加,入射深度增加,对电池的损伤增大。
研究结果表明:170keV电子入射到PN结区,对电池的影响主要是电离效应。随着注量增加,低能电子辐照对盖片反射率影响不大,使光谱响应的短波段较明显衰降,电性能参数的总体衰减趋势为Pmax>Isc>Voc>FF。低能电子电离效应损伤主要是在窗口层和发射区(P区)。1MeV电子穿透整个电池,其对电池的损伤是电离加位移作用,它对电池电性能衰降,按严重程度排列依次是Pmax>Isc>FF>Voc。电子辐照后电池室温放置一段时间后发生退火效应,性能回复。
暗特性研究结果表明:不同类型不同注量的辐照均使GaAs/Ge太阳电池串联电阻Rs增加和并联电阻Rsh减小;能量越高,注量越大,则作用程度越大。
低能综合辐照的协同效应对电池电性能,玻璃盖片反射率,量子效率的影响整体表现为相互减弱。
On the basis of ground-based simulation for space irradiation environment, investigate the damage effect of the proton and electron single irradiation and co-irradiation on the GaAs/Ge solar cells with cover-glass. Dark I-V characteristic curve and I-V characteristic curve under solar simulator were studied to find how the cell parameters to change after irradiatinon. Spectral response, optical reflectance ratio et al was also investigated to get the change of inner-structure and property of solar cells, and the reason of property degradation induced by different irradiation types and different fluence of particles.
By the results of SRIM and CASINO, we found that the incident depth of 170keV electron in cell is far more than that of proton and arrived at base region of solar cell. The depth of 1MeV incident electron is very deep which reach Ge substrate. The greater the energy of particles, the deeper the incident depth, and the greater the damage on the cells.
The results show that, 170keV electron arrived at PN region, and they produce damage mainly through ionization effect. With the increase of radiation fluence, low energy electron have little effect on reflection ratio, but make the quantum efficiency decrease in the short wave band distinctly. Attenuation trend of cell electronic parameters after 170keV electron irradiation is Pmax>Isc>Voc>FF, and that after 1MeV electron irradiation is Pmax>Isc>FF>Voc.
The damage effect of 1MeV electron on solar cell are ionization effect and displacement effect. The property of GaAs/Ge solar cells after irradiation were restored after some days because of anneal effect.
The results of dark I-V characteristics show that, all kinds of irradiation and different fluences make the resistance in series Rs larger, and the parallel resistance smaller, and with the increase of energy and fluence, there effects are more greater.
The integrated irradiation results show that, the effect of integrated irradiation on GaAs/Ge solar cells is not equal to the value of proton irradiation adding electronic irradiation, and synergistic effect is obvious. And there are some discusses in this thesis.
引文
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