窄带宽带氧化物径向异质纳米结构光电特性研究
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摘要
近年来,随着纳米科技的不断发展,新型异质纳米结构成为当前研究的热点。借助异质材料的接触与融合所产生的表面和界面的奇异功能特性,可以构建新型光电器件。本论文从SnO2和ZnO基一维纳米结构出发合成了一类典型的一维异质结纳米结构,研究其所具有的新的光电特性。论文主要内容包括：SnO2基和ZnO基异质纳米结构材料的可控制备；对SnO2基异质纳米结构的发光特性进行了研究,并对其机理进行了探讨；对SnO2基和ZnO基异质纳米结构的气敏特性进行测试,并探讨了其机理。
本文首先介绍了SnO2、ZnO一维纳米材料的结构、特性、应用以及制备方法,同时对纳米复合材料的发展现状进行了分析。
本文中,材料的制备主要采用液相化学法合成出了SnO2/CdS、SnO2/La2O3、SnO2/ZnO、SnO2/CuO、ZnO/TiO2等一维异质纳米结构。研究了SnO2/CdS、SnO2/La2O3、SnO2/ZnO的光致发光特性,分析了SnO2的异质结构与纯SnO2纳米棒相比光致发光谱发生变化的原因。其中,SnO2/ZnO异质纳米结构的新发光峰是由SnO2/ZnO的界面引起的。SnO2/CdS异质纳米材料的光致发光峰的红移是复合CdS引起的,而SnO2/La2O3异质纳米材料的光致发光峰的红移是La2O3的催化作用引起的。
研究了所制备的复合纳米材料在不同工作温度下的气敏特性。发现复合材料中各物质之间的摩尔比为一适当值时,对乙醇和氢气等气体表现了增强的气敏特性,包括高的灵敏度和低的最佳工作温度。其气敏机理可归结为半导体同型异质结模型、p-n结模型、催化剂模型等。
Recently, new types of heteronanostructures have attracted a lot of interest with a deep development of nanoscience and nanotechnology. Novel optoelectronic devices can be fabricated in terms of the special properties induced by the interface of the heteronanostructures. In the thesis, one kind of one-dimensional (ID) heteronanostructures is synthesized based on one-dimensional SnO2 and ZnO nanomaterials for investigating their new optoelectronic properties. The main contents of the thesis contain control synthesis of 1 D heteronanostructures based on SnO2 and ZnO, room temperature photoluminescence properties and the corresponding mechanism of SnO2-based heteronanostructures, and gas sensing properties and the relative mechanism of all the heteronanostructures.
The structure, characteristics, applications and synthesis methods are firstly introduced in the thesis, and then the development trend is analyzed.
1 D SnOz/CdS, SnO2/La2O3, SnO2/ZnO, SnO2/CuO and ZnO/TiO2 nanostructures are prepared by wet chemical methods. Room temperature photoluminescence properties and the corresponding mechanism of SnO2-based heteronanostructures such as SnO2/CdS, SnO2/La2O3 and SnO2/ZnO are investigated. The new peak in SnO2/ZnO heterostructures is attributed to the interface between SnO2 and ZnO. Redshift of the main peak in SnO2/CdS is induced by CdS, whereas the phenomenon in SnO2/La2O3 is related to the catalytic effect of La2O3.
The sensing properties of those 1 D heteronanostructures are investigated at different working temperature. We find that those nanocomposites with an appropriate moral proportion exhibit enhanced sensing characteristics including high sensitivity and low optimum working temperature. The sensing mechanisms can be summarized as the same type of semiconductor heterojunction model, p-n junction model and catalytic model etc.
本文首先介绍了SnO2、ZnO一维纳米材料的结构、特性、应用以及制备方法,同时对纳米复合材料的发展现状进行了分析。
本文中,材料的制备主要采用液相化学法合成出了SnO2/CdS、SnO2/La2O3、SnO2/ZnO、SnO2/CuO、ZnO/TiO2等一维异质纳米结构。研究了SnO2/CdS、SnO2/La2O3、SnO2/ZnO的光致发光特性,分析了SnO2的异质结构与纯SnO2纳米棒相比光致发光谱发生变化的原因。其中,SnO2/ZnO异质纳米结构的新发光峰是由SnO2/ZnO的界面引起的。SnO2/CdS异质纳米材料的光致发光峰的红移是复合CdS引起的,而SnO2/La2O3异质纳米材料的光致发光峰的红移是La2O3的催化作用引起的。
研究了所制备的复合纳米材料在不同工作温度下的气敏特性。发现复合材料中各物质之间的摩尔比为一适当值时,对乙醇和氢气等气体表现了增强的气敏特性,包括高的灵敏度和低的最佳工作温度。其气敏机理可归结为半导体同型异质结模型、p-n结模型、催化剂模型等。
Recently, new types of heteronanostructures have attracted a lot of interest with a deep development of nanoscience and nanotechnology. Novel optoelectronic devices can be fabricated in terms of the special properties induced by the interface of the heteronanostructures. In the thesis, one kind of one-dimensional (ID) heteronanostructures is synthesized based on one-dimensional SnO2 and ZnO nanomaterials for investigating their new optoelectronic properties. The main contents of the thesis contain control synthesis of 1 D heteronanostructures based on SnO2 and ZnO, room temperature photoluminescence properties and the corresponding mechanism of SnO2-based heteronanostructures, and gas sensing properties and the relative mechanism of all the heteronanostructures.
The structure, characteristics, applications and synthesis methods are firstly introduced in the thesis, and then the development trend is analyzed.
1 D SnOz/CdS, SnO2/La2O3, SnO2/ZnO, SnO2/CuO and ZnO/TiO2 nanostructures are prepared by wet chemical methods. Room temperature photoluminescence properties and the corresponding mechanism of SnO2-based heteronanostructures such as SnO2/CdS, SnO2/La2O3 and SnO2/ZnO are investigated. The new peak in SnO2/ZnO heterostructures is attributed to the interface between SnO2 and ZnO. Redshift of the main peak in SnO2/CdS is induced by CdS, whereas the phenomenon in SnO2/La2O3 is related to the catalytic effect of La2O3.
The sensing properties of those 1 D heteronanostructures are investigated at different working temperature. We find that those nanocomposites with an appropriate moral proportion exhibit enhanced sensing characteristics including high sensitivity and low optimum working temperature. The sensing mechanisms can be summarized as the same type of semiconductor heterojunction model, p-n junction model and catalytic model etc.
引文
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