摘要
铁电厚膜非制冷红外焦平面阵列是新一代红外热成像系统的关键部件。热释电红外焦平面阵列具有成本低、无需制冷和对红外波长无选择性等优点,被广泛应用于军事和民用领域。钛酸锶钡(BST)铁电厚膜因具有优越的介电和热释电效应以及能与半导体技术兼容等特点,成为非制冷红外焦平面阵列的优选材料,用其制备的介电量热型非制冷红外焦平面阵列具有独特的优点。
本文研究了红外探测器的噪声,电压响应率和电流响应率与BST厚膜及结构参数间的关系,改进了非制冷微测辐射热计焦平面阵列制备工艺。主要内容如下:
对热释电探测器建立的一到三维模型进行了探讨,分析硅微桥结构的传热物理模型及其理论计算方法,提出了具有“桌形”绝热框架支撑的微桥结构,用有限元分析证明其有较小的热导,能获得较高响应率。
研究了微桥绝热结构的刻蚀工艺及多孔硅绝热层制备工艺,在厚度为240μm的硅基片上制备了腐蚀坑深度大于200μm,桥面为200μm×200μm的微桥结构,成功制作出16×16的微桥结构阵列。采用电化学法制备了多孔硅,通过HF溶液浓度、电流密度和反应时间来控制多孔硅的孔径、孔隙率和膜厚。观测了样品的微观形貌,分析了热导率。
用乙酸盐溶胶-凝胶法制备了Mn掺杂BST凝胶。微波烧结制备了BST纳米粉体和厚膜,粉体粒径60nm、厚膜粒径200nm左右。介电性能ε_Γ>1000,tanδ<2%。研究了La-Mn-Al离子掺杂对厚膜微观结构、介电性能的影响。La、Mn、Al离子共掺杂能显著地抑制BaSrTiO_3的晶粒生长,厚膜结晶过程析出多晶微粒,提高了厚膜均匀性和致密性。讨论了不等价掺杂及掺杂量对介电性能的影响。采用改进的溶胶-凝胶法在Pt/Ti/SiO_2/Si基片上制备了Mn掺杂六层不同组份梯度BST厚膜,厚度约为5μm,研究了梯度BST厚膜的微观结构及其介电性能,介电常数峰值为920,损耗约为1.8×10~(-2)。以钛酸钡凝胶薄膜种子层为不同组分BST厚膜间的夹层,在LNO/Pt/Ti/SiO_2/Si复合底电极上制备了厚度约为20μm的BST介电增强型夹层厚膜。结果表明,650℃热处理后的夹层厚膜为单一钙钛矿相,750℃热处理后的夹层厚膜在温度25℃、频率1KHz下相对介电常数和损耗峰值分别为1200和3%,室温附近较宽范围介温变化率大于1.2%/℃;BST夹层厚膜无裂纹,表面平整。
提出了通过硅通孔技术实现垂直互连,提高像元占空比,缩短了互连引线长度,降低了信号延迟。用单晶硅湿法刻蚀加工方法形成通孔,利用直写技术将耐高温Ag-Pd导体浆料填充通孔,实现红外焦平面阵列底电极与硅基片背面倒装焊凸点互连。
Ferroelectric thick-film (FTF) uncooled infrared focal plane array (UIFPA) is a key part of new-generation thermal imaging system. Pyroelectric IFPA has advantages of low cost, no need of refrigeration, no requirement for infrared wavelength, etc, it has been used in military and civil field. BST FTF has predominant dielectric and pyroelectric effects and may be compatible with semi-conductor technology, so it has become excellent material of UIFPA. Dielectric calorimetry UIFPA use BST as UIFPA has particular advantages.
This work has investigated the relation between the noise of the infrared detector, voltage response rate, current response rate and kinds of parameters of BST thick film and structure. The fabrication technology of uncooled infrared focal plane array was improved. The main contents are as follows:
The one-dimension, two-dimension and three-dimension models, which were set up for pyroelectric detectors, were analyzed. A kind of micro-bridge structure was provided in this work with desk-type adiabatic frame support, and the analysis results by finite element method showed that the minor thermal conductivity and high responsivity can be obtained.
The etching technology of micro-bridge thermal insulation structure and fabrication technology of porous silicon heat insulating layer are researched. The micro-bridge structure with etch-pit depth over 200μm and bridge surface about 200μm×200μm was prepared on a silicon substrate with depth of 240μm, and 16×16 micro-bridge structure array was successfully made. Porous silicon samples were prepared by electrochemical method. The aperture, porosity ratio and film thickness of porous silicon could be controlled by different concentrations of HF solution, current density and reaction time. Micro structure of porous silicon samples was observed and thermal conductivity was analyzed.
The stoichiometric proportion and doping of film can be controlled exactly as the result of the preparation of film by sol-gel method. The particle with 60nm in diameter and the films with 200nm in thickness were prepared by microwave sintering technology. The dielectric temperature characteristicε_r was larger than 1000, and tanδwas less than 2%. The influence of La-Mn-Al co-doping on the micro-structure of BST thick film and dielectric properties was analyzed. The co-doping of La, Mn and Al could markedly inhibit the growth of BaSrTiO_3 grain, and polycrystalline particles were precipitated during crystallization of the thick film to enhance the uniformity and compactness of thick film. The influence of unequal-valence and doping amount on the leakage current, dielectric loss and dielectric property was discussed. The Mn-doped BST thick films with six different layers of composition gradients were fabricated in the Pt/Ti/SiO_2/Si silicon chip by improved sol-gel method. The thickness of the thick film was about 5μm. Then the micro structure and dielectric property of the gradient thick film is studied, with dielectric coefficient 920 and dielectric loss approximately 1.8×0~(-2). Taking the BST thin film as the interlining between the thick films with different components, the BST dielectric-reinforced interlining thick films of around 20μm thickness were made in the composite LNO/Pt/Ti/SiO_2/Si bottom electrode. The XRD patterns showed that there was only perovskite phase in the interlining thick films through heating treatment at 650℃. The relative dielectric constantε_r and dielectric loss tanδof the interlining thick film by heating treatment at 750℃were approximately 1200 and 3% in the case of 25℃and 1 kHz, respectively. The dielectric-temperature change rate was over 1.2%/℃within a wide range near 25℃. The surface of BST interlining thick film was smooth and compact without any fracture.
In this work, we put forward that vertical interconnection could be realized by making use of the technique of Through-Silicon-Via (TSV) to enhance the duty, shorten the interconnect metallic line and cut the signal delay time. A through-hole is formed by silicon wet etching method, and then is filled with high-temperature resisting Ag-Pd conductive paste through use of direct writing technology, so as to realize the interconnection between the bottom electrode of infrared focal plane array and flip chip bonding bump at the back side of silicon substrate.
引文
[1]常本康,蔡毅.红外成像阵列与系统.[M].北京:科学出版社,2006.
[2]Lavrik N V,et al.Uncooled infrared imaging using bimaterialmicrocantilever arrays.[J].SPIE,2006,6206:6208.
[3]孙志君.红外焦平面阵列技术的军用市场展望.[J].传感器技术,1999,5(5):1-8.
[4]Wijewarnasuriya P S.Molecular beam epitaxy grown long wavelength infrared HgCdTe on compliant Si substrates.[J].Infrared Technology and Applications ⅩⅩⅫ Proc of SPIE,2006,6206:11-1-11-10.
[5]赵超,杨号.红外制导的发展趋势及其关键技术.[J].电光与控制,2008,15(5)48-53.
[6]Scott R.H,et al High-sensitivity uncooled microcantilever infrared imaging arrays.[J].SPIE,2003,5074:469-480.
[7]何丽.走向新世纪的红外热成像技术.激光与光电子学进展.2002,12(39):48-51.
[8]Katsuya M,Kazuhiko H,Shinji T,et al.Human Information Sensor.[J].Sensors and Actuators,1998,66:1-8.
[9]Liu S T and Long D.Pyroelectric detectors and materials.[J].Proc.IEEE,1978,66(1):14-16.
[10]Liu M D,Wang P Y,Zeng Y K,et al.The Preparation of PbTiO_3 Thin Film by Sol-Gel Processing.[J].Sensors and Actuators:A Physical,1993,35:259-263.
[11]Liu M D,Wang P Y,Li C R.Preparation and Properties of Yttrium-modified Lead Titanate Ferroelectric Thin Films.[J].Sensors and Actuators:A Physical,1997,58:245-247.
[12]Ding Y P,Cheng J R,Li C M et al.Microstructure and Electrical Properties of Ba_(1-x)Sr_xTiO_3 Thin Film Prepared by Sol-Gel process.[J].Advances in Science and Technology,Faena:Techna Press,1999,20:615-617.
[13]Noda M,Hashimoto K,Kubo R.A new type of dielectric bolometer mode of detector pixel using ferroelectric thin film capacitors for infrared image sensor.Sensors and Actuators A,1999,77:39-44.
[14]Bell A,.Huang Y,Paul O,Nemirovsky Y,et al.A thin film pyroelectric detector.[J].Integrated Ferroelectrics,1995,6:231-240.
[15]Tseung Y T.(Ba,Sr)TiO_3 thin films:preparation,propertyes and reliability.[J].forroelectrics,1999,232:1-13.
[16]Tsai M S,et al.Effect of bottom electrode materials and annealing treatments on the electrical characteristics of Ba_(0.47)Sr_(0.53)TiO_3 film capacitors.[J].Journal of the American Cermlaie Society,1999,82(2):351-358.
[17]高西汉.钙钛矿结构.[J].压电与声光,1994,16(4):44-48.
[18]李波,张树人,周晓华.纳米掺杂剂中Mn离子对BaTiO_3基多层陶瓷电容器瓷料的影响.[J].硅酸盐学报,2006,34(3):293-298.
[19]章天金,何军,张柏顺,等.磁控溅射法制备BST铁电薄膜的实验研究.[J].压电与声,2007,29(1):62-67.
[20]Levin I,Leapman R D,Kaiser D L,et al.Accommodation of excess Ti in a (Ba,Sr)TiO_3 thin film with 53.4%Ti grown on Pt/SiO2/Si by metalorganic chemicalvapor deposition.[J].Applied Physics Letters,1999,75(9):1299-1301.
[21]Zhu X H,ChanH L,Choy C L,et al.Influence of AmbientOxygen Pressure on the PreferentialOrientation,Microstructures,and Dielectric Properties of(Ba_(1-x)Sr_x)TiO_3Thin Filmswith CompositionallyGraded Structures.[J].Appl.Phys.A,2005,80(3):591-595.
[22]曾亦可,刘梅冬,姜胜林,等.BST溶胶-凝胶的化学与热反应过程研究[J].华中科技大学学报:自然科学版,2003,31(11):38-40.
[23]姜胜林,曾亦可,刘少波,刘梅冬.改进sol-gel技术BST薄膜的制备及性能研究[J].功能材料,2004,(03):365-367.
[24]Paul W.Kruse.Uncooled IR Foeal Plane Arrays.[J].SPIE.1995,255:556-563.
[25]邵式平.非制冷红外焦平面列阵进展.[J].红外技术,1999,18(2):1-6.
[26]Cole B,Weeres S,Higashi R,et al.Honeywell resistor array development and future directions.[J].Proc.SPIE,1999,3697:188-196.
[27] Jonathan J B. Micromachined High Frequency Ferroelectric Sonar Transducers.[J]. IEEE Trans.Ultrason., Ferroelect. Freq. Contr., 1997, 44 (5): 960-968.
[28] Meyer B, et al. Amber's Uncooled Mierobolometer LWIR Camera. [J]. SPIE.1996. 2746: 13-22.
[29] Wood R A, Han C J, Kruse P W. Integrated uncooled infrared detector imaging array.Technical Digest-IEEE Solid-State Sensor and Actuator Workshop, 1992, 132-135.
[30] Li Churong, Liu Meidong, Zeng Yike, et al. Preparation and properties of yttrium-modified lead zirconate titanate ferroelectric thin films. [J]. Sensors and Actuators A, 1997, 58: 245-247.
[31] Radford W. 320x240 microbolometer focal plane array for uncooled application. [J]. SPIE.1996.2685: 80-90.
[32] Riehard B, Steven G, Margaret K, et al. Recent technology advancements and applications of advanced uncooled imagers. [J]. PROCEEDINGS OF SPIE. 2004(5406): 422-427.
[33] Radford W, Murphy D, Finch A, et al. Sensitivity improvements in uncooled microbolometer FPAs. [J]. Pro.SPIE, 1999,3698: 119-130.
[34] Murphy D F, Ray M, Wyles J, et al. Performance improvements for Vox mierobolometer FPAs. [J]. Proc. SPIE, 2004, 5406: 531-540.
[35] Fieque B, Crastes A, Tissot J L, et al. 320×240 uncooled mierobolometer 2D array for radiometric and process control applications. [J]. Proc. SPIE, 2004, 5251:114-120.
[36] Grealish K, Kacir T, B.Backer, et al. An advanced infrared thermal imaging module for military and commercial applications. [J]. Proc.SPIE, 2005, 5796: 186-192.
[37] Trouilleau C, Crastes A, Legras O, et al. 35μm pitch at ULIS, a breakthrough. [J].SPIE, 2005, 5783: 578-585.
[38] Pope T D, Jerominek H, Alain C, et al.Commercial and custom 160×120,256×1,and 512×3 pixel bolometric FPAs. [J]. Proc. SPIE, 2002, 4721: 64-74.
[39] Tanaka Y, Tanaka A, Iida K, et al. Performance of 320x240 uncooled bolometer-type infrared focal plane arrays. [J]. Proc.SPIE, 2003, 5074: 414-424.
[40]陈伯良,陆微,王正官.64×64元InSb光伏红外探测器阵列性能表征.[J].红外与毫米波学报.2000,19(2):89-92.
[41]孙志君.红外焦平面阵列技术的军用市场展望.[J].传感器技术.1999,5(5):1-8.
[42]陈永平,梁平治,张学敏等.128×1非制冷微测辐射热计红外探测器阵列研制.[C].2003年全国光电学术交流会论文集,2003,4-7.
[43]Dong L,Yue R F,Liu L T.An uncooled microbolometer infrared detector based on poly-SiGe thermistor.[J].Sensors and Actuators,A:Physical,2003,105(3):286-292.
[44]袁祥辉,黄友恕,吕果林.128×128元IRFPACMOS读出电路.[J].红外技术.2002,24(3):34-37.
[45]Todd M A,Watton R.Laser assisted etching of ferroelectric ceramics for the reticulation of IR detector arrays.[J].Infrared technology and applications,1990,1320:95-106.
[46]Howard P E,Clarke J.E,Costa R D,et al.Uncooled infrared focal plane producibility improvements at DRS.[J].Proc.SPIE,2002,4820(1):175-182.
[47]Astier A,Arnaud A,Ouvrier-Buffet J,et al.Advanced packaging development for very low cost uncooled IRFPA.[J].Proc.SPIE,2005,5640:107-116.
[48]Howard P E,Clarke J E,Li C,et al.Recent advances in TEC-less uncooled FPA.sensor operation.[J].Proc.SPIE,2003,5074:527-536.
[49]Antoni R.Infrared detectors:an overview.[J].Infrared Physics & Technology,2002,4(3-5):187-210.
[50]马红博.复合薄膜热释电红外探测器的初步研制.[D].西安:西安交通大学电子与信息工程学院.2000:46-47.
[51]王志,侯峙云,刘宝华,等.热释电红外探侧器综合性能参数的测试.[J].红外技术,2002,24(3):41-43.
[52]王彬.热释电器件结构分析.[J].长春理工大学学报.2004,27(2):14-16.
[53]王三红,吴小清,姚熹.复合热释电薄膜红外探侧器的制备和性能测试.西安交通大报.2001,35(2):146-149.
[54]Murphy D,Ray M,WyIes R,et al.High sensitivity(25um pitch) microbolometer FPAS.[J].Proc of SPIE,2002(4721):222-228.
[55]Charles M,Neal B,Richard B,et al.Uncooled infrared sensor with digital focal plane array.[J].SPIE,2746,1996,23-31.
[56]Paul W.Kruse,David D.Skatrud.Uncooled infrared imaging arrays and systems.[M].Academic Press,1997,103-105.
[57]Watton R.Ferroelectric materials and IR bolometer arrays from hybrid arrays towards integration.[J].Integrated Ferroelectrics,1994,4:175-186.
[58]黄承彩.混合式非致冷焦平面器件芯片工艺研究.[J].应用光学,1999,120(2):10-17.
[59]刘梅冬,刘少波,曾亦可,等.Ba_(1-x)Sr_xO_3薄膜的制备及性能研究.[J].压电与声光.2001,23(1):41-43.
[60]Tadashi S.Piezo-,pyro-,and ferroelectric thin films.[C].Proceedings of the 6th US-Japan seminar on dielectric and piezoelectric ceramics,USA,1993:1-8.
[61]Takayama R,et al.Pyroelectric Linear array infrared sensors made of c-axis-oriented La-modified PbTiO_3 thin films.[J].Journal of Applied Physics,63(12),1988:5868-5872.
[62]杨世铭,陶文栓.传热学(第3版)[M],北京,高等教育出版社,1998,178-188.
[63]程尚模.传热学.[M],北京,高等教育出版社,1990,26-29.
[64]白丕绩,太云见,林猷慎,等.薄膜型热释电探测器红外响应模型分析.[J],红外技术,2006,28(3):129-133.
[65]杨晓瑜,吴志明,蒋亚东,等.UFPA器件的新型微桥结构设计及其有限元分析.[J].传感器与微系统,2007,26(1):71-76.
[66]张正元,徐世六,刘玉奎,等.用于MEMS的硅湿法深槽刻蚀技术研究.[J].微电子学,2004,34(5):519-521.
[67]Kovacs G,Maluf N,Petersen K.Bulk micromachining of silicon.[J].Proc.of IEEE,1998:1536-1551.
[68]Kazuo S,Mitsuhiro S,Takashi Y,et al,Anisotropic etching rates of single crystal silicon of TMAH water solution as a function of crystallographic orientation,Sensors and Actuators,1999,73:131-137.
[69]Van V E,Nijdam A J,Simulation of anisotropic wet chemical etching using a physical model, Sensors and Actuators, 2000, 84: 324-329.
[70] Chen J,Liu L,Li Z,et al. Study of anisotropic etching of (100) Si with ultrasonic agitation[J].Sensors and Actuators, 2002, A96: 152-156.
[71] Tan S, Reed M, Han H, et al. Mechanisms of etch hillock formation. [J]. J. Microelectromechanical Systems, 1996: 66-72.
[72] Nijdam A J, Veenendaal E V, Cuppen H M. Formation and stabilization of pyramidal etch hillocks on silicon (100) in anisotropic etchants:experiments and monte carlo simulation . [J]. Journal of Applied Physics, 2001, 89(7): 4113-4123.
[73] Tanaka H, Yamashita S. Fast etching of silicon with a smooth surface in high temperature ranges near the boiling point of KOH solution. [J]. Sensors and Actuators A, 2004, 114: 5 16-520.
[74] Yang C R, Chen P Y. Effects of various ion-typed surfactants on silicon anisotropic etching properties in KOH and TMAH solutions. [J]. Sensors and Actuators A, 2005, 119:271-281.
[75] Zubel I, Kramkowska M. The effect of isopropyl alcohol on etching rate and roughness of (100) Si surface etched in KOH and TMAH solutions. [J]. Senors and Actuators A, 2001, 93: 138-147.
[76] Oda N, Taanka Y, Sasaki T, et al. Performance of 320x240 bolometer-type uncooled infrared detector. [J]. NEC Res&Develop, 2003, 44(2): 170-174.
[77] Dong L,Yue R F, Liu L T, et al. Design and fabricationof single-chip a-Si TFT-based uncooled infrared sensors. [J]. Sensors and Actuators, 2004, 116: 257-263 .
[78] Canham L T, Cox T I, Loni A, et al. Progress towards silicon optoelectronics using porous silicon technology.[ J]. Applied Surface Science, 1996, 102: 436-441.
[79] Wolf A, Brendel R.Thermal conductivity of sintered porous silicon films .Thin Solid Films, 2006, 513 (1-2): 385-390.
[80] Grigoris K, Athanase A, Nassiopoulos. Characterization of a silicon thermal gas-flow sensorwith porous silicon thermal isolation. [J]. IEEE Sensor Journal, 2002, 2(5): 463-475.
[81] Naoki O, Yutaka T. Performance of 320x240 bolometer-type uncooled infrared detector .NEC Research and Development, 2003, (2): 170-174.
[82]周卫,福田芳雄,古屋一夫多孔硅层湿法腐蚀现象的研究.[J].电子元件与材料,2000,19(5):7-8.
[83]朱利兵,唐元洪,胡爱平,等.无酸水热法制备多孔硅.[J].电子器件,2006,29(2):311-313.
[84]田斌,胡明,张之圣.用电化学方法制备多孔硅.[J].天津大学学报,2004,37(9):823-826.
[85]Kordas K,Remes J,Beke S,et al.Manufacturing of porous silicon:porsity and thickness dependence on electrolyte composition.[J].Applied Surfae Science,2001,178:190-193.
[86]房振乾,胡明,窦雁巍.双槽电化学腐蚀法制备多孔硅的孔隙率研究.[J].压电与声光,2007,29(2):230-236.
[87]胡明,田斌,王兴,等.化学刻蚀法制备多孔硅的表面形貌研究.[J].功能材料,2004.25(2):223-224.
[88]Perichon S,Lysenko V,Roussel P,et al.Technology and micro-Ranman characterization of thick meso-porous silicon layers for thermal effect microsystems.[J].Sensors and Actuators,2000,85:235-239.
[89]崔梦,胡明,窦雁巍,等.显微拉曼光谱法对多孔硅热导率的研究.[J].固体电子学研究与进展,2006,26(3):386-389.
[90]Dong L,Yue R F,Liu L T,et al.Design and fabrication of single-chip a-Si TFT-based uncooled infrared sendors.[J].Sensors and Actuators,2004,116:257-263.
[91]Perichon S,Lysenko V,Roussel Ph,et al.Technology and micro-Raman characterization of thick meso-porous silicon layers for thermal effect microsystems.[J].Sensors and Actuators,2000,85:235.
[92]Rhim S M,Bak H,Hong S,et al.Effectofheating rate on the sintering behavior and the dielectric properties of ceramics prepared by boron- containing liquid-phase.[J].J.Am.Ceram Soc.,2000,83(12):3009.
[93]Zhu W,Wang C C,Akbar S A,el al Fast-sintering of hydrother mally synthesized BaTiO_3powder and their dielectric properties.[J].J.Mater.Sci,1997(32):4303.
[94]Chen J G,Tang J,Chu J H.Pyroeletric properties in sol-gel derived barium strontium titanate thin films using a highly diluted precursor solution.[J].Appl Phys Lett,2000,77(7):1035-1037.
[95]Chen J G,Tang J,Meng X J,et al.Fabrication and characterization of pyroelectric Ba_(0.8)Sr_(0.2)TiO_3 thin flims by a sol-gel process.[J].J Am Ceram Soc,2001,84(7):1421-1424.
[96]曾亦可,刘梅冬,姜胜林,等.BST溶胶—凝胶的化学与热反应过程研究[J].华中科技大学学报(自然科学版):2003,31(11):38-40.
[97]陈国华,刘俊涛,戚冰,等.均匀沉淀法制备SBN50陶瓷及其介电性能研究.[J].电子元件与材料,2008,27(11),18-23.
[98]Bykov A I,Polotai A V,Ragulya A V,et al.Theory and technology of sintering,heat,and chemical heat-treatment process.Powder Metallurgy and Metal Ceramics,2000,39(7-8):395-402.
[99]李月明,宋婷婷,张斌,等.Ca_(0.125)(Li_(1/2)Sm_(1/2))_(0.875)TiO_3微波介质陶瓷的低温烧结.[J].电子元件与材料.2008,27(1):21-24.
[100]Mosset A S,Gautier-Luneaul,Galy J,et al.Sol-gel proeessed BaTiO_3 struetual evolution from the gel to the crystalline powder.J Non-Cryst Solids,1988,100:339-345.
[101]Ayyub P,Palkap V R,Chattopadhyays,et al.Effect of crystal size reduction on lattice symmetry and cooperative properties.[J].Physical Review B:Condensed Matter,1995,51(9):6135-6140.
[102]Ezhilvalavan S,Tseng T Y.Progress in the development of(Ba,Sr)TiO_3(BST) thin films for gigabit era DRAMs.[J].Mater Chem Phys,2000,65:227-248.
[103]Arlt G,Hennings D,With G.Dielectric properties of fine grained barium titanate ceramics.J.Appl.Phys,1985,58(4):1619-1625.
[104]Liou J W,Chiou B S.Dielectric characteristics of doped Ba_(1-x)Sr_xTiO_3 at paraelectric state.[J].Materials Chemistry and Physics,1997,51(1):59-63.
[105]Dawber M,Scott J F,Hartmann A J.Effect of donor and acceptor dopants on Schottky barrier heights and vacancy concentrations in barium strontium titanate.[J].J Europe Ceram Soc,2001,21(10-11):1633-1636.
[106]Ahn K H,Baik S,Kim S S.Significant suppression of leakage current in (Ba,Sr)TiO_3 thin films by Ni or Mn doping.[J].Journal of Applied Physics,2002,92(5):2651-2654.
[107]Chiu L H.Ceramics Ferroelectric Composite Materialswith Enhanced Electric Properties BSTO-Mg Based Compound-rare Earth Oxide.[P].US:Patent,6074971,2000.
[108]Sengupta L C.Ceramics Ferroelectric Composite Materials-BSTO-magnesium Based Compound.[P].US:Patent,5635434,1997.
[109]ROBERTSON J,CHEN C W.Schottky barrier heights of tantalum oxide,barium strontium titanate,lead titanate,and strontium bismuth tantalate.[J].Appl Phys Lett,1999,74(8):1168-1170.
[110]金学淼,姜胜林,张光祖.Mn掺杂对BST热释电陶瓷性能的影响.[J]压电与声光,2007,29(5):577-579.
[111]鲍军波,任天令,刘建设.Mn掺杂BST薄膜的制备与表征.[J].压电与声光 2002,24(5):389-391.
[112]Joshi P C,Cole M W.Mg-doped Ba_(0.6)Sr_(0.4)TiO_3 thin film for tunable microwave applications.[J].Appl Phys Lett,2000,77(2):289-291.
[113]Liou J W,Chiou B S.Dielectric characteristics of doped Ba_(1-x)Sr_xTiO_3 at the paraelectric state.[J].Materials Chemistry and Physics,1997,51(1):59-63.
[114]Deshpande S B,Khollam Y B,Bhoraskar S V,etal.Synthesis and characterization of microwave-hydrothermally derived Ba_(1-x)Sr_xTiO_3 powders.[J].Materials Letters,2005,59:293-296.
[115]Fukuda Y,Numata K,Aoki K,et al.Origin of dielectric relaxation observed for Ba0.5Sr0.5TiO3thin-film capacitor.[J].Jpn J Appl Phys,1996,35:5178-5180.
[116]Veda D.Implementation of GaAs monolithic microwave integrated circuits with on-chip BST capacitors.[J].J Electroceramics,1999,3(2):105-113.
[117]Chern C S,Liang S,Shi Z Q,et al.Heteroepitaxial growth of Ba_(1-x)Sr_xTiO_3/YBa_2Cu_3O_(7-x) by plasma-enhanced metalorganic chemical vapor deposition.[J].Appl Phys Lett,1994,64:3181-3183.
[118]Mohammed M S,Auner G W,Naik R,et al.Temperature dependence of conventional and effective pyroelectric coefficients for compositionally graded Ba_(1-x)Sr_xTiO_3films.[J].J Appl Phys,1998,84(6):3322-3325.
[119]Panda B,Samantaray C B,DharA,et al.Electrical properties of RFmagnetron sputtered Ba_(1-x)Sr_xTiO_3 films on multi-layered bottom electrodes for high-density memory application.[J].J Mat Sci:Materals in Electronics,2002,13:263-268.
[120]Ying B,Xiao C S,Chen X Y,et al.(Ba_(0.5)Sr_(0.5))TiO_3/LaNiO_3 hetero structures grown by pulsed deposition.[J].Ferroelectrics,1999,232:78-82.
[121]Lee S J,Moon S E,Ryu H C,et al.Microwave properties of compositionally graded(Ba,Sr)TiO3 thin films according to the direction of the composition gradient for tunable microwave applications.[J].Appl Phys Lett,2003,82(13):2133-2135.
[122]Adikary S U,Chan H L W.Compositionally graded Ba_(1-x)Sr_xTiO_3 thin films for tunable microwave applications.[J].Mater Chem Phys,2003,79:157-160.
[123]Tian H Y,Chan H L W,Choy C L,et al.The effects of composition gradients of Ba_xSr_(1-x)TiO_3 thin films on their microstructures,dielectric and optical properties.[J].Mater Sci Eng B,2003,103:246-252.
[124]Bauer S,Ploss B.A simple technique to interface pyroelectric materials with silicon substrates for infrared detection.[J].Ferroelectrics Letters,1989,9(2):155-160.
[125]Sung T P,Chin Y L,Wen T,et al.Nevel CMOS readout techniques for uncooled pyroeletric.[J].SPIE,1998,3360:60-72.
[126]尤政,李涛.CMOS图像传感器在空间技术中应用.[J].光学学报2002,28(1):31-35.
[127]张五星,薛丽红,邹雪城,等.流延法制备钛酸锶钡厚膜.[J].压电与声光,2006,28(3):314-316.
[128]苏吉儒,魏建华,庄继胜.赴向21世纪的非制冷热成像技术.[J].红外与激光工程,1999,28(3):41-45.
[129]袁宁一,李格,李金华,等.微测辐射热计的红外热响应模拟.[J].红外与毫米波学报,2006,25(3):183-187.
[130]杨建生.BGA多芯片组件及三维立体封装(3D)技术.[J].电子与封装,2003,3(1):34-38.
[131]Biohk.EMC-3D联盟瞄准经济的TSV互连.[J].集成电路应用,2007,19(5): 47-48.
[132]丁衡高.微系统与微米/纳米技术及其发展.[J],微米/纳米科学与技术,2000,5(1).
[133]Senesae L R,Corbeila J L,Rajic S,et al.IR imaging using uncooled microcantilever detectors.[J].Ultramicroscopy,2003,97:451-58.
[134]吴传贵,刘兴钊,张万里,等.热释电薄膜在红外探测器中的应用.[J].红外,2004,(3):7-11.
[135]孙娟,李建林.混成焦平面器件倒装互连设备对准精度分析.[J].红外技术,1997,19(5):30-32.
[136]Satoh A.Interconnection of stacked layers by bumpless wiring in wafer-level three-dimenstional device.[J].IEICE Trans Electron,2001,(VE84-C):1746-1755.
[137]Eugene M C,Venkataraman C,Aaron P,et al.Process compatible polysilicon based electrical through-wafer interconnects in silicon substrates.[J].Journal of Microelecromechanical Systems,2002,(11):631-640.
[138]Rasmussen F E,Heschel M and Hansen O,clave test on anisotropic conductive joints.[J].Microelectronics Reliability,2003,43:279-285.
[139]Chow E M,Partridge A,Quate C F,et al.Through-wafer electrical interconnects compatible with standard semiconductor processing[A].Solid-State Sensor Actuator Workshop 2000[C].Clevelan(USA):Transducers Res Found,2000.343-346.
[140]Tan S,Reed M,Han H,et al.Mechanisms of etch hillock formation.[J].J.Microelectromechanical Systems,1996:66-72.
[141]Nijdam A J,Veenendaal E V,Cuppen H M.Formation and stabilization of pyramidal etch hillocks on silicon(100) in anisotropic etchants:experiments and montecarlo simulation.[J].Journal of Applied Physics,2001,89(7):4113-4123.
[142]Tanaka H,Yamashita S.Fast etching of silicon with a smooth surface in high temperature ranges near the boiling point of KOH solution.[J].Sensors and Actuators A,2004,114:516-520.
[143]Yang C R,Chen P Y.Effects of various ion-typed surfactants on silicon anisotropic etching properties in KOH and TMAH solutions.[J].Sensors and Actuators A,2005,119:271-281.
[144]Barker N S,Rebeiz G M.Distributed MEMS truetime delay phase shifter and wide-band switches.[J].IEEE Trans on MTT,1998,46(11):1-10.
[145]张沈军,李婉莹,姚达,等.PECVD及溅射/蒸发生长二氧化锡薄膜的成形技术[J].电子器件,1995,18(3):180-183.
[146]刘敬伟,曾晓雁.激光直写技术的现状和展望.激光杂志,2001,22(6):15-18.
[147]Li H L,Zeng X Y.Li H F et al.Research on film thickness of conductive line formed by laser micro-fine cladding and flexibly direct writing technique.Chinese Optics Letters,2004,2(11):654-657.
[148]李耀兵,余震,刘冬生,等.Micropen激光柔性布线系统的研究.[J].航空精密制造技术,2004,40(5):40-43.
[149]张勇.厚膜导线浆料技术.[J].贵金属,2001,22(4):65-68.
[150]祁晓敬,李祥友,曾晓雁.线路板表面激光微细熔覆金属有机浆料直写布线技术研究,中国激光.2004,31(7):883-887.
[151]李祥友.激光微细熔覆电子浆料柔性布线技术与设备.[D].武汉,华中科技大学图书馆,2006.