宇航用FPGA单粒子效应及监测方法研究
摘要
近年来可编程门阵列(FPGA)以其高集成度、可编程等优点在宇航体系中的应用越来越广泛,应用于该领域的FPGA主要有SRAM型、Flash型和反熔丝型。但同时空间中以单粒子效应为代表的辐射效应也对FPGA可靠性造成了严重威胁。
本文主要针对宇航用FPGA,特别是基于SRAM的FPGA的单粒子效应展开研究。首先讨论了单粒子效应的原理以及各类单粒子效应的形成机制。同时在掌握空间环境特点和各类单粒子效应的机理的基础上,主要针对宇航用基于SRAM型FPGA的内部结构及可能出现的单粒子事件展开分析。发现单粒子翻转和单粒子功能中止会影响到FPGA的多个模块,对整个器件可靠性影响巨大,需要着重考虑。
本文另外一个关键点是如何监测宇航用FPGA中的单粒子事件。在调研大量国外资料的基础上,结合试验原理及试验数据讨论了内建自测试、瞬态激光测试、重离子试验和质子试验四类主要的单粒子试验和监测方法。其中重离子试验是一种最贴近实际的也是在国内外使用率较高的试验方法,本文对其做了着重研究,对其静态测试、动态测试以及功能中止测试方面研究了具体的测试方法。此外,本文还研究了FPGA单粒子地面模拟试验中的试验监测数据处理方法。
In recent years, field-programmable gate arrays (FPGAs) have being used more and more widely in aerospace applications for the advantages of high integration and programmable. There are mainly three types of FPGA in this field, they are SRAM-based FPGA, Flash-based FPGA and anti-fuse based FPGA. While at the same time, space radiation represented by single event effects (SEEs) make serious threats to the reliability of these FPGAs.
This paper developed a research for aerospace FPGAs,SRAM-based FPGA in particular,on single event effects(SEEs). All at first, the basic principle of SEEs and a variety of the formation mechanisms of SEEs were studied. After well known the characteristics of space environment and basis mechanism of kinds of SEEs, a search was developed mainly for the internal structure and the possibility of SEEs in SRAM-based FPGAs. It is found that single-event upset(SEU) and single-event functional interrupt (SEFI) can affect many FPGA modules, and they are very important parts of consideration of devices
Another key point of this paper is how to monitor the SEEs in FPGA. Through learning a large number of foreigner literatures, this paper summarizes the approaches of the built-in self test, the laser test, heavy ion and proton test. Heavy ion test is one of the closest one to the actual usage, and it is also the domestic method at home and abroad. So this paper also focus on the test data processing methods of the corresponding research in FPGA SEEs ground simulation tests .
本文主要针对宇航用FPGA,特别是基于SRAM的FPGA的单粒子效应展开研究。首先讨论了单粒子效应的原理以及各类单粒子效应的形成机制。同时在掌握空间环境特点和各类单粒子效应的机理的基础上,主要针对宇航用基于SRAM型FPGA的内部结构及可能出现的单粒子事件展开分析。发现单粒子翻转和单粒子功能中止会影响到FPGA的多个模块,对整个器件可靠性影响巨大,需要着重考虑。
本文另外一个关键点是如何监测宇航用FPGA中的单粒子事件。在调研大量国外资料的基础上,结合试验原理及试验数据讨论了内建自测试、瞬态激光测试、重离子试验和质子试验四类主要的单粒子试验和监测方法。其中重离子试验是一种最贴近实际的也是在国内外使用率较高的试验方法,本文对其做了着重研究,对其静态测试、动态测试以及功能中止测试方面研究了具体的测试方法。此外,本文还研究了FPGA单粒子地面模拟试验中的试验监测数据处理方法。
In recent years, field-programmable gate arrays (FPGAs) have being used more and more widely in aerospace applications for the advantages of high integration and programmable. There are mainly three types of FPGA in this field, they are SRAM-based FPGA, Flash-based FPGA and anti-fuse based FPGA. While at the same time, space radiation represented by single event effects (SEEs) make serious threats to the reliability of these FPGAs.
This paper developed a research for aerospace FPGAs,SRAM-based FPGA in particular,on single event effects(SEEs). All at first, the basic principle of SEEs and a variety of the formation mechanisms of SEEs were studied. After well known the characteristics of space environment and basis mechanism of kinds of SEEs, a search was developed mainly for the internal structure and the possibility of SEEs in SRAM-based FPGAs. It is found that single-event upset(SEU) and single-event functional interrupt (SEFI) can affect many FPGA modules, and they are very important parts of consideration of devices
Another key point of this paper is how to monitor the SEEs in FPGA. Through learning a large number of foreigner literatures, this paper summarizes the approaches of the built-in self test, the laser test, heavy ion and proton test. Heavy ion test is one of the closest one to the actual usage, and it is also the domestic method at home and abroad. So this paper also focus on the test data processing methods of the corresponding research in FPGA SEEs ground simulation tests .
引文
[1] L. Sterpone and M. Violante,A New Partial Reconfiguration-Based Fault-Injection System to Evaluate SEU Effects in SRAM-Based FPGAs,IEEE Transactions On Nuclear Science, VOL. 54, NO. 4, August 2007 ,p965
[2]闫蕾王强房亮等,可编程逻辑迄今在空间电子学设备中的应用,空间科学学报,2009 29(1)p54
[3] L.D.Edmonds, C.E.Barnes, An Introduction to Space Radiation Effects on Microelectronics, JPL Pulication 00-06,p916
[4] Xilinx Introduces the Industry's Highest Performance, Largest Capacity FPGAs for SpaceApplications,04/08/2008,p4
[5] A Comparison of Radiation-Hard and Radiation-Tolerant FPGAs for Space Applications, NASA Jet Propulsion Laboratory D-31228,p9
[6] D. Binder, E. C. Smith, and A. B. Holman, Satellite Anomalies from Galactic Cosmic Rays, IEEE Trans. Nucl. Sci., vol. 22, Dec. 1975, p 2675
[7] R. C. Wyatt, P. J. McNulty, P. Toumbas, P. L. Rothwell, and R. C. Filz, Soft Errors Induced by Energetic Protons, IEEE Trans. Nucl. Sci., vol. 26 Dec. 1979, p 4905
[8] The Space Radiation Environment and its effects on Spacecraft Components and Systems, 14- 18 June 2004,P14
[9]高欣,杨生胜,牛小乐等,空间辐射环境与测量,真空与低温,2007-3,第13卷第一期,p41
[10] D. Binder, E. C. Smith, and A. B. Holman, Satellite Anomalies from Galactic Cosmic Rays, IEEE Trans. Nucl. Sci., vol. 22, Dec. 1975, p2675
[11] Single Event Effects Test Method And Guidelines ESCC Basic Specification No. 25100(ESA-25100),p11
[12] Paul E. Dodd, Lloyd W. Massengill, Basic Mechanisms and Modeling of Single-Event Upset in Digital Microelectronics, IEEE Transactions On Nuclear Science, VOL. 50, NO. 3, JUNE 2003, p583
[13] E. L. Petersen, Single event analysis and prediction, 1997 IEEE NSREC ,p231
[14] F. Wrobel, J.-M.,Incidence of multi-particle events on soft error rates caused by n-Si nuclear reactions, IEEE Trans. Nucl. Sci., vol. 47, Dec. 2000 ,p 2580
[15] C. M. Hsieh, P. C. Murley, and R. R. O’Brien, A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices, IEEE Electron. Device Lett., vol. 2, Dec. 1981, p 103
[16] C. M. Hsieh, Collection of charge from alpha-particle tracks in silicon devices, IEEE Trans. Electron. Devices, vol. 30, Dec. 1983, p686
[17] EIA/JEDEC STANDARD, Test Procedure for Measurement of Single-Event Effects in semiconductor Devices from Heavy Ion Irradiation, ECEBER 1996,p32
[18] D. G. Mavis and P. H. Eaton, Soft error rate mitigation techniques for modern microcircuits, in Proc. Int. Reliability Phys. Symp, 2002, p 216
[19] J. S. Fu, C. L. Axness, and H. T. Weaver, Memory SEU simulations using 2-D transport calculations, IEEE Electron. Device Lett., vol. 6, Aug. 1985 , p 422–424
[20] R. L. Woodruff and P. J. Rudeck, Three-dimensional numerical simulation of single event upset of an SRAM cell, IEEE Trans. Nucl. Sci., vol. 40, Dec. 1993. , p1795
[21] Paul E. Dodd, Lloyd W. Massengill, Basic mechanisms and modeling of single-event upset in digital microelectronics,p585
[22] P. E. Dodd and F. W. Sexton, Critical charge concepts for CMOS SRAMs, IEEE Trans. Nucl. Sci., vol. 42, Dec. 1995, p1764
[23] NASA,Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices, ( Designation: F 1192– 00 (Reapproved 2006)),p25
[24] Heather Quinn, Paul Graham, Jim Krone, Michael Caffrey, and Sana Rezgui,Radiation-Induced Multi-Bit Upsets in SRAM-Based FPGAs,IEEE Transactions On Nuclear Science, Vol. 52, No. 6, December 2005,p412
[25] R. Koga, S. D. Pinkerton, Single-word multiple-bit upsets in static random access devices, IEEE Trans. Nucl. Sci., vol. 40, Dec. 1993, p1941
[26] A. H. Johnston, G. M. Swift, and L. D. Edmonds,Latchup in Integrated Circuits from Energetic Protons,IEEE Transactions on Nucl.Sci, p 2367
[27] Candice C. Yui, Gary M. Swift, and Carl Carmichae,SEU Mitigation of Xilinx Virtex II FPGAs for Critical Flight Applications,California Institute of Technology Pasadena CA 91 109
[28] R. Koga, J. George, G. Swift, C. Yui, L. Edmonds, C. Carmichael, T. Langley, P. Murray, K. Lanes, and M. Napier,Comparison of Xilinx Virtex-II FPGA SEE Sensitivities to Protons and Heavy Ions, IEEE Transactions On Nuclear Science, VOL. 51, NO. 5, October 2004, p2825
[29] M. Bellato, M. Ceschia, M. Menichelli, A. Papi, J. Wyss and A. Paccagnella,Ion Beam Testing of SUM-based FPGA’s, 0-7803-7313-8/01 (C) IEEE, p476
[30]赵艳秋,Actel立足FlashFPGA走差异化道路,中国电子报/2009-8-25第008版
[31] Leonard Rockett, Dinu Patel, Steven Danziger, Brian Cronquist ,Radiation Hardened FPGA Technology for Space Applications, IEEEAC, Version 2, December 08, 2006, p1305
[32] J. J. Wang, W. Wong, S. Wolday, B. Cronquist, J. McCollum, R. Katz, Kleyner, Single Event Upset and Hardening in 0.15μm Antifuse-Based Field Programmable Gate Array, IEEE Transactions On Nuclear Science, VOL. 50, NO. 6, December 2003, P2158
[33] NASA Electronic Parts and Packaging Program, A Comparison of Radiation-Hard and Radiation-Tolerant FPGAs for Space Applications, JPL D-31228, p118
[34] Methodologies to Study Frequency-Dependent Single Event Effects Sensitivity in Flash-Based FPGAs, IEEE Transactions On Nuclear Science, Vol. 56, No. 6, December 2009,p3534
[35] NASA, Philippe Adell, Assessing and Mitigating Radiation Effects in Xilinx FPGAs, JPL Publication 08-9 2/08,p3-20
[36] Virtex? 2.5 V Field Programmable Gate Arrays Data sheet ,p9
[37] Melanie Berg, HAK Kim, Christian Poivey, Xilinx Virtex 4 LX25 Preliminary Test Results (Effects of NASA/GSFC REAG scrubber), Test Date: 3/2006; 6/2006; 7/2006; 8/2006; 8/2007; Report Date: 10/2006
[38] Christian Poivey, Melanie Berg, Scott Stansberry, Mark Friendlich, Hak Kim, Heavy ion SEE test of Virtex4 FPGA XC4VFX60 from Xilinx,Test Date(s): February 16-19, 2007;Report Date: June 28, 2007
[39] Gregory Allen ,Gary Swift and Carl Carmichael ,Virtex-4VQ Static SEU Characterization Summary,NASA, JPL Publication 08-16 4/08, p33
[40] Anitha Balasubramanian ,A Built-In Self-Test (BIST) Technique for Single-EventTransient Testing In Digital Circuits ,p17
[41] M. Turowski, D. Mavis, A. Raman, P. Eaton, Digital Single Event TransientPulse Generation and Propagation in Fast Bulk CMOS ICs, MIXDES, June 2007, p433
[42] Paul E. Dodd, Device Simulation of Charge Collection and Single-Event Upset, IEEE Trans. Nucl. Sci., vol. 43, 1996, p 561
[43] M. Abramovici et al., Using Roving STARs for On-Line Testing and Diagnosis of FPGAs in Fault-Tolerant Applications , Proc. Intl. Test Conf., 1999, p979
[44] M. Alderighi , F. Casini, S. DAngelo, M. Mancini, A. Marmo,,A Tool for Injecting SEU-like Faults into the Configuration Control Mechanism of Xilinx Virtex FPGAs,18th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (DFT’03),p1063
[45] Buchner S P,Wilson D, Kang K, et al. Laser Simulation of Single Event Upsets. IEEE Trans. Nuclear Science,1987,34(6)p1228
[46] Richter A K and Arimura I. Simulation of Heavy Charged Particle Tracks Using Focused Laser Beams. IEEE Trans. Nuclear Science,1987,34(6)p1234
[48] Buchner S, McMorrow D, Melinger J, et al. Laboratory Tests for Single Event Effects. IEEE Trans. Nuclear Science,1996, 43(2):p679
[49] J. D. Hayden, Polysilicon BiCMOS process for fast 16 Mb SRAMs, IEEE Trans. Electron. Devices, vol. 41, , Dec. 1994,p2322
[50] Moss S C, LaLumondiere S D, Scarpulla J R,et al. Correlation of Picosecond Laser Induced Latchup and Energetic Particle Induced Latchup in CMOS Test Structures. IEEE Trans. Nuclear Science, 1995,42(6):1948
[51]贺朝会、李永宏、杨海亮,单粒子效应辐射模拟实验研究进展,核技术2007-4, p348
[52]贺朝会,国内单粒子效应实验测试技术分析,中国科技论文在线,p6
[53] Test Procedures for the Measurement of Single-Event Effect in Semiconductor Devices from Heavy Ion Irradiation (EIA/JESD 57)
[54]丁义刚,空间环境辐射单粒子效应研究,航天器环境工程,2007-10,p285
[55] Larry D. Edmonds, Pronton SEU Cross Sections Derived from Heany-Ion Test Data, NASA Microelectronics Space Radiation Effects Program., p31
[56] C.C. Yui, G.M. Swift, SEU Mitigation Testing of Xilinx Virtex II FPGAs, p563
[57] Candice Yui, Gary Swift and Carl Carmichae12 Jet Propulsion Laboratory, Califomia Institute of Technology, Pasadena, CA Single Event Upset Susceptibility Testing of the Xilinx Virtex I– FPGA, p312
[58] Martha V. O’Bryan, Christian Poivey, Scott D. Kniffin, Compendium of Single Event Effects Results for Candidate Spacecraft Electronics for NASA, IEEE NSREC 2006 July, p2
[59]贺朝会,空间轨道单粒子翻转预估方法研究,中国科技论文在线,p2
[60]韩建伟,高能重离子径迹结构对单粒子翻转的影响,空间科学学报,2000,20(4), p334
[61] Gregory R. Allen and Gary M. Swift, Single Event Effects Test Results for Advanced Field Programmable Gate Arrays, IEEE. 2006, 1-4244-0638-2/06,p115
[62] Coy K. Kouba, Kyson Nguyen, Proton Radiation Test Results on COTS-Based Electronic Devices for NASA-Johnson Space Center Spaceflight Projects,IEEE NSREC Feb .p26
[2]闫蕾王强房亮等,可编程逻辑迄今在空间电子学设备中的应用,空间科学学报,2009 29(1)p54
[3] L.D.Edmonds, C.E.Barnes, An Introduction to Space Radiation Effects on Microelectronics, JPL Pulication 00-06,p916
[4] Xilinx Introduces the Industry's Highest Performance, Largest Capacity FPGAs for SpaceApplications,04/08/2008,p4
[5] A Comparison of Radiation-Hard and Radiation-Tolerant FPGAs for Space Applications, NASA Jet Propulsion Laboratory D-31228,p9
[6] D. Binder, E. C. Smith, and A. B. Holman, Satellite Anomalies from Galactic Cosmic Rays, IEEE Trans. Nucl. Sci., vol. 22, Dec. 1975, p 2675
[7] R. C. Wyatt, P. J. McNulty, P. Toumbas, P. L. Rothwell, and R. C. Filz, Soft Errors Induced by Energetic Protons, IEEE Trans. Nucl. Sci., vol. 26 Dec. 1979, p 4905
[8] The Space Radiation Environment and its effects on Spacecraft Components and Systems, 14- 18 June 2004,P14
[9]高欣,杨生胜,牛小乐等,空间辐射环境与测量,真空与低温,2007-3,第13卷第一期,p41
[10] D. Binder, E. C. Smith, and A. B. Holman, Satellite Anomalies from Galactic Cosmic Rays, IEEE Trans. Nucl. Sci., vol. 22, Dec. 1975, p2675
[11] Single Event Effects Test Method And Guidelines ESCC Basic Specification No. 25100(ESA-25100),p11
[12] Paul E. Dodd, Lloyd W. Massengill, Basic Mechanisms and Modeling of Single-Event Upset in Digital Microelectronics, IEEE Transactions On Nuclear Science, VOL. 50, NO. 3, JUNE 2003, p583
[13] E. L. Petersen, Single event analysis and prediction, 1997 IEEE NSREC ,p231
[14] F. Wrobel, J.-M.,Incidence of multi-particle events on soft error rates caused by n-Si nuclear reactions, IEEE Trans. Nucl. Sci., vol. 47, Dec. 2000 ,p 2580
[15] C. M. Hsieh, P. C. Murley, and R. R. O’Brien, A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices, IEEE Electron. Device Lett., vol. 2, Dec. 1981, p 103
[16] C. M. Hsieh, Collection of charge from alpha-particle tracks in silicon devices, IEEE Trans. Electron. Devices, vol. 30, Dec. 1983, p686
[17] EIA/JEDEC STANDARD, Test Procedure for Measurement of Single-Event Effects in semiconductor Devices from Heavy Ion Irradiation, ECEBER 1996,p32
[18] D. G. Mavis and P. H. Eaton, Soft error rate mitigation techniques for modern microcircuits, in Proc. Int. Reliability Phys. Symp, 2002, p 216
[19] J. S. Fu, C. L. Axness, and H. T. Weaver, Memory SEU simulations using 2-D transport calculations, IEEE Electron. Device Lett., vol. 6, Aug. 1985 , p 422–424
[20] R. L. Woodruff and P. J. Rudeck, Three-dimensional numerical simulation of single event upset of an SRAM cell, IEEE Trans. Nucl. Sci., vol. 40, Dec. 1993. , p1795
[21] Paul E. Dodd, Lloyd W. Massengill, Basic mechanisms and modeling of single-event upset in digital microelectronics,p585
[22] P. E. Dodd and F. W. Sexton, Critical charge concepts for CMOS SRAMs, IEEE Trans. Nucl. Sci., vol. 42, Dec. 1995, p1764
[23] NASA,Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices, ( Designation: F 1192– 00 (Reapproved 2006)),p25
[24] Heather Quinn, Paul Graham, Jim Krone, Michael Caffrey, and Sana Rezgui,Radiation-Induced Multi-Bit Upsets in SRAM-Based FPGAs,IEEE Transactions On Nuclear Science, Vol. 52, No. 6, December 2005,p412
[25] R. Koga, S. D. Pinkerton, Single-word multiple-bit upsets in static random access devices, IEEE Trans. Nucl. Sci., vol. 40, Dec. 1993, p1941
[26] A. H. Johnston, G. M. Swift, and L. D. Edmonds,Latchup in Integrated Circuits from Energetic Protons,IEEE Transactions on Nucl.Sci, p 2367
[27] Candice C. Yui, Gary M. Swift, and Carl Carmichae,SEU Mitigation of Xilinx Virtex II FPGAs for Critical Flight Applications,California Institute of Technology Pasadena CA 91 109
[28] R. Koga, J. George, G. Swift, C. Yui, L. Edmonds, C. Carmichael, T. Langley, P. Murray, K. Lanes, and M. Napier,Comparison of Xilinx Virtex-II FPGA SEE Sensitivities to Protons and Heavy Ions, IEEE Transactions On Nuclear Science, VOL. 51, NO. 5, October 2004, p2825
[29] M. Bellato, M. Ceschia, M. Menichelli, A. Papi, J. Wyss and A. Paccagnella,Ion Beam Testing of SUM-based FPGA’s, 0-7803-7313-8/01 (C) IEEE, p476
[30]赵艳秋,Actel立足FlashFPGA走差异化道路,中国电子报/2009-8-25第008版
[31] Leonard Rockett, Dinu Patel, Steven Danziger, Brian Cronquist ,Radiation Hardened FPGA Technology for Space Applications, IEEEAC, Version 2, December 08, 2006, p1305
[32] J. J. Wang, W. Wong, S. Wolday, B. Cronquist, J. McCollum, R. Katz, Kleyner, Single Event Upset and Hardening in 0.15μm Antifuse-Based Field Programmable Gate Array, IEEE Transactions On Nuclear Science, VOL. 50, NO. 6, December 2003, P2158
[33] NASA Electronic Parts and Packaging Program, A Comparison of Radiation-Hard and Radiation-Tolerant FPGAs for Space Applications, JPL D-31228, p118
[34] Methodologies to Study Frequency-Dependent Single Event Effects Sensitivity in Flash-Based FPGAs, IEEE Transactions On Nuclear Science, Vol. 56, No. 6, December 2009,p3534
[35] NASA, Philippe Adell, Assessing and Mitigating Radiation Effects in Xilinx FPGAs, JPL Publication 08-9 2/08,p3-20
[36] Virtex? 2.5 V Field Programmable Gate Arrays Data sheet ,p9
[37] Melanie Berg, HAK Kim, Christian Poivey, Xilinx Virtex 4 LX25 Preliminary Test Results (Effects of NASA/GSFC REAG scrubber), Test Date: 3/2006; 6/2006; 7/2006; 8/2006; 8/2007; Report Date: 10/2006
[38] Christian Poivey, Melanie Berg, Scott Stansberry, Mark Friendlich, Hak Kim, Heavy ion SEE test of Virtex4 FPGA XC4VFX60 from Xilinx,Test Date(s): February 16-19, 2007;Report Date: June 28, 2007
[39] Gregory Allen ,Gary Swift and Carl Carmichael ,Virtex-4VQ Static SEU Characterization Summary,NASA, JPL Publication 08-16 4/08, p33
[40] Anitha Balasubramanian ,A Built-In Self-Test (BIST) Technique for Single-EventTransient Testing In Digital Circuits ,p17
[41] M. Turowski, D. Mavis, A. Raman, P. Eaton, Digital Single Event TransientPulse Generation and Propagation in Fast Bulk CMOS ICs, MIXDES, June 2007, p433
[42] Paul E. Dodd, Device Simulation of Charge Collection and Single-Event Upset, IEEE Trans. Nucl. Sci., vol. 43, 1996, p 561
[43] M. Abramovici et al., Using Roving STARs for On-Line Testing and Diagnosis of FPGAs in Fault-Tolerant Applications , Proc. Intl. Test Conf., 1999, p979
[44] M. Alderighi , F. Casini, S. DAngelo, M. Mancini, A. Marmo,,A Tool for Injecting SEU-like Faults into the Configuration Control Mechanism of Xilinx Virtex FPGAs,18th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (DFT’03),p1063
[45] Buchner S P,Wilson D, Kang K, et al. Laser Simulation of Single Event Upsets. IEEE Trans. Nuclear Science,1987,34(6)p1228
[46] Richter A K and Arimura I. Simulation of Heavy Charged Particle Tracks Using Focused Laser Beams. IEEE Trans. Nuclear Science,1987,34(6)p1234
[48] Buchner S, McMorrow D, Melinger J, et al. Laboratory Tests for Single Event Effects. IEEE Trans. Nuclear Science,1996, 43(2):p679
[49] J. D. Hayden, Polysilicon BiCMOS process for fast 16 Mb SRAMs, IEEE Trans. Electron. Devices, vol. 41, , Dec. 1994,p2322
[50] Moss S C, LaLumondiere S D, Scarpulla J R,et al. Correlation of Picosecond Laser Induced Latchup and Energetic Particle Induced Latchup in CMOS Test Structures. IEEE Trans. Nuclear Science, 1995,42(6):1948
[51]贺朝会、李永宏、杨海亮,单粒子效应辐射模拟实验研究进展,核技术2007-4, p348
[52]贺朝会,国内单粒子效应实验测试技术分析,中国科技论文在线,p6
[53] Test Procedures for the Measurement of Single-Event Effect in Semiconductor Devices from Heavy Ion Irradiation (EIA/JESD 57)
[54]丁义刚,空间环境辐射单粒子效应研究,航天器环境工程,2007-10,p285
[55] Larry D. Edmonds, Pronton SEU Cross Sections Derived from Heany-Ion Test Data, NASA Microelectronics Space Radiation Effects Program., p31
[56] C.C. Yui, G.M. Swift, SEU Mitigation Testing of Xilinx Virtex II FPGAs, p563
[57] Candice Yui, Gary Swift and Carl Carmichae12 Jet Propulsion Laboratory, Califomia Institute of Technology, Pasadena, CA Single Event Upset Susceptibility Testing of the Xilinx Virtex I– FPGA, p312
[58] Martha V. O’Bryan, Christian Poivey, Scott D. Kniffin, Compendium of Single Event Effects Results for Candidate Spacecraft Electronics for NASA, IEEE NSREC 2006 July, p2
[59]贺朝会,空间轨道单粒子翻转预估方法研究,中国科技论文在线,p2
[60]韩建伟,高能重离子径迹结构对单粒子翻转的影响,空间科学学报,2000,20(4), p334
[61] Gregory R. Allen and Gary M. Swift, Single Event Effects Test Results for Advanced Field Programmable Gate Arrays, IEEE. 2006, 1-4244-0638-2/06,p115
[62] Coy K. Kouba, Kyson Nguyen, Proton Radiation Test Results on COTS-Based Electronic Devices for NASA-Johnson Space Center Spaceflight Projects,IEEE NSREC Feb .p26