自旋转移矩效应驱动磁性纳米结构的磁化动力学研究
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摘要
巨磁电阻效应(GMR)已经被广泛的应用在磁性存储器、传感器等领域。近年来发现的自旋转移矩效应(Spin transfer torque, STT)被认为是继GMR效应之后又一里程碑的发现。自旋转移矩效应是一种在没有外磁场的作用下可以有效地控制磁化方向的方法。自旋转移矩效应可以应用在磁性随机存储器(MRAM)、高频微波发生器、赛道存储器(Racetrack Memory)等。本论文主要分为微磁学模拟自旋转移矩效应和实验上研究了横向自旋阀结构中的Seebeck效应两部分。主要结果如下：
(一)微磁学模拟自旋转移矩效应
这一部分主要基于Landau-Lifshitz-Gilbert方程通过微磁学模拟软件研究了自旋阀和磁性隧道结结构中的自旋转移矩效应。
(1)通过微波磁场辅助的方法,降低了自旋阀和磁性隧道结中磁化反转所需临界电流密度。微波磁场振幅和频率对临界电流密度的减小量影响非常大。临界电流密度随着微波磁场振幅的增加而减小。微波磁场辅助存在一个最优频率,当微波磁场频率等于最优频率时临界电流密度减小量最大。微波磁场辅助的最优频率等于自旋阀或磁性隧道结的自然共振频率。同时,在微波磁场辅助下磁化反转时间也可以减小。
(2)在不同偏振形式的微波磁场辅助下,临界电流密度和磁化反转时间的减小量不同。我们分别研究了线偏振和圆偏振微波磁场辅助自旋转移矩激发磁化反转。在圆偏振微波磁场辅助下临界电流密度和磁化反转时间比线偏振微波磁场辅助下的小。
(3)垂直各向异性不仅可以材料影响动态磁性而且也影响自旋转移矩激发磁化反转。对于In-plane自旋阀结构,其自然共振频率和自旋转移矩效应激发自由层磁化反转所需临界电流密度随着垂直各向异性常数的增加而减小。而对于Out-plane磁性隧道结而言,临界电流密度以及自然共振频率随着磁晶各向异性常数的增加而增加。
(4)利用微磁学模拟了具有二维周期性边界条件的反点阵列膜的静态磁矩分布以及动态磁性。由于周期性边界条件的引入,使反点阵列膜具有各向异性。对于正方排列的反点阵列膜具有四重对称易轴。通过改变反点阵列膜的孔间距、孔半径以及膜的厚度调节其自然共振频率。其中反点阵列膜的厚度的改变对其本身自然共振频率的影响不大。
(二)横向自旋阀结构中的Seebeck效应
这一部分主要研究了三种横向自旋阀结构中的Seebeck效应。首先,我们利用电子束曝光技术制备了横向FM/NM异质纳米结构。并分别利用直流叠加在交流上的锁相放大技术和直接直流测量研究了横向FM/NM异质纳米结构中由焦耳热和Peltier效应引起的Seebeck效应。由焦耳热引起的Seebeck电压与注入偏置直流的二次方成正比,并且关于偏置直流IDC=0mA轴对称。但是对于local横向自旋阀结构,Seebeck电压是不对称的,这种不对称来源于异质结构中的Peltier效应。当通入直流电流为1.5mA时,注入结和探测结之间的温度差为2K。焦耳热不仅可以通过铜传输,而且也可以通过基板传输。通过基板传输的焦耳热大约是通过铜传输焦耳热的12%。同时我们也证明了在同种介质材料中不存在Seebeck效应。
Giant magnetoresistance (GMR) effect had been extensively used in magnetic memory, magnetic sensor and so on. The spin transfer torque was theoretically predicted by Berger and Slonczewski in1996, which was considered as milestone after GMR in magentics. The magnetization can be manipulated by the spin transfer torque rather than the external magnetic field in nanoscale magnetic device. Spin transfer torque holds great promise in the applications of the nonvolatile magnetic random access memory (MRAM), the high-frequency microwave oscillators and the racetrack memory. In this thesis, it is investigated that the spin transfer torque induces magnetization switching under microwave magnetic field assisting by micromagnetic simulation, and the Seebeck voltage is systematically investigated in lateral spin valve by two different measurement techniques. The main results of this thesis are as following:
(一)Spin transfer torque investigated by micromagnetic
In this section, the spin transfer torque driven magnetization reversal in spin valve or magnetic tunnel junction (MTJ) is studied based on the extense Landau-Lifshitz-Gilbert equation by micromagnetic simulation.
(1) The critical current density of magnetization switching induced STT in spin valve and magnetic tunnel junction is systematically investigated under microwave magnetic field assisting by micromagnentic simulation. The simulation results indicate that critical current density and magnetization switching time can be obviously reduced due to the introduction of microwave magnetic field. And the frequency and amplitude of microwave magnetic field can strongly affect both critical current density and magnetization switching time. Critical current density and magnetization switching time decrease with increasing microwave amplitude, when microwave frequency is fixed. The minimums of critical current density and magnetization switching time can be obtained, when microwave frequency comes up to the optimal frequency, which is the natural ferromagnetic resonance frequency of spin valve and MTJ. At one time, the mechanism of magnetization switching changes from nucleation reversal to coherent rotation.
(2) It is investigated that the STT inducing magnetization reversal is assisted by three types microwave magnetic field (circularly polarized, in-plane linearly polarized and out-plane linearly polarized microwave magnetic field). The reducation of critical current density and magnetization switching time under circularly polarized microwave assisted is bigger than that under linearly polarized microwave assisted.
(3) Perpendicular anisotropy is very important, because it has an impact not only on dynamic magnetic, but also on STT inducing magnetization reversal. Micromagneitc simulation is carried out to build up a direct relationship between critical current density, natural resonance frequency and uniaxial magnetic anisotropy constant in In-plane spin valve and Out-plane MTJ. In in-plane spin valve, the critical current densiy and natural resonance frequency linearly decrease with the increasing uniaxial magnetic anisotropy constant. But the critical current densiy linearly increases with increasing uniaxial magnetic anisotropy constant in out-plane MTJ.
(4) Dynamic magetic susceptibilities and static magnentization configurations of permally antidot array with two dimensional periodic boundary condition (2DPBC) are investigated by micromagnetic simulation. The stripy-shaped domains appear in antidot array through the holes, which is originated from the shape anisotropy and magnetic dipolar interaction of neighboring repeating element. The natural resonance frequency can be adjusted by changing the inter-holes distance, inner radius and thinkness of antidot array film. The natural resonance frequency weakly varies with thinkness.
(二)Seebeck effect in lateral FM/NM hybrid nanstucture
In this section, the Seebeck effect is systematically investigated in three type lateral Ferromagnetic/Nonmagnetic (FM/NM) hybrid nanostructures. The Seebeck voltage in lateral FM/NM hybrid nanostructure can be obtained by the measurment of different resistance using ac lock-in technology or DC current measurement method. The bias-current dependence background voltage in the conventional nonlocal spin valve measurement is reasonably explained by the Seebeck voltage induced by Peltier effect and Joule heating. The Seebeck voltage curve as function of DC bias current, which is only induced by Joule heating, is symmetry as parabolic function of DC bias current at IDC=0mA axis. The origin of the Seebeck voltage asymmetry curve is the Peltier effect in lateral FM/NM hybrid. The temperature difference between two probes is about2K, when DC bias current is1.5mA.12%of the total thermal power is dispersed through the SiO2/Si substrate via the Cu wire. And there is not Seebeck effect in the same material.
(一)微磁学模拟自旋转移矩效应
这一部分主要基于Landau-Lifshitz-Gilbert方程通过微磁学模拟软件研究了自旋阀和磁性隧道结结构中的自旋转移矩效应。
(1)通过微波磁场辅助的方法,降低了自旋阀和磁性隧道结中磁化反转所需临界电流密度。微波磁场振幅和频率对临界电流密度的减小量影响非常大。临界电流密度随着微波磁场振幅的增加而减小。微波磁场辅助存在一个最优频率,当微波磁场频率等于最优频率时临界电流密度减小量最大。微波磁场辅助的最优频率等于自旋阀或磁性隧道结的自然共振频率。同时,在微波磁场辅助下磁化反转时间也可以减小。
(2)在不同偏振形式的微波磁场辅助下,临界电流密度和磁化反转时间的减小量不同。我们分别研究了线偏振和圆偏振微波磁场辅助自旋转移矩激发磁化反转。在圆偏振微波磁场辅助下临界电流密度和磁化反转时间比线偏振微波磁场辅助下的小。
(3)垂直各向异性不仅可以材料影响动态磁性而且也影响自旋转移矩激发磁化反转。对于In-plane自旋阀结构,其自然共振频率和自旋转移矩效应激发自由层磁化反转所需临界电流密度随着垂直各向异性常数的增加而减小。而对于Out-plane磁性隧道结而言,临界电流密度以及自然共振频率随着磁晶各向异性常数的增加而增加。
(4)利用微磁学模拟了具有二维周期性边界条件的反点阵列膜的静态磁矩分布以及动态磁性。由于周期性边界条件的引入,使反点阵列膜具有各向异性。对于正方排列的反点阵列膜具有四重对称易轴。通过改变反点阵列膜的孔间距、孔半径以及膜的厚度调节其自然共振频率。其中反点阵列膜的厚度的改变对其本身自然共振频率的影响不大。
(二)横向自旋阀结构中的Seebeck效应
这一部分主要研究了三种横向自旋阀结构中的Seebeck效应。首先,我们利用电子束曝光技术制备了横向FM/NM异质纳米结构。并分别利用直流叠加在交流上的锁相放大技术和直接直流测量研究了横向FM/NM异质纳米结构中由焦耳热和Peltier效应引起的Seebeck效应。由焦耳热引起的Seebeck电压与注入偏置直流的二次方成正比,并且关于偏置直流IDC=0mA轴对称。但是对于local横向自旋阀结构,Seebeck电压是不对称的,这种不对称来源于异质结构中的Peltier效应。当通入直流电流为1.5mA时,注入结和探测结之间的温度差为2K。焦耳热不仅可以通过铜传输,而且也可以通过基板传输。通过基板传输的焦耳热大约是通过铜传输焦耳热的12%。同时我们也证明了在同种介质材料中不存在Seebeck效应。
Giant magnetoresistance (GMR) effect had been extensively used in magnetic memory, magnetic sensor and so on. The spin transfer torque was theoretically predicted by Berger and Slonczewski in1996, which was considered as milestone after GMR in magentics. The magnetization can be manipulated by the spin transfer torque rather than the external magnetic field in nanoscale magnetic device. Spin transfer torque holds great promise in the applications of the nonvolatile magnetic random access memory (MRAM), the high-frequency microwave oscillators and the racetrack memory. In this thesis, it is investigated that the spin transfer torque induces magnetization switching under microwave magnetic field assisting by micromagnetic simulation, and the Seebeck voltage is systematically investigated in lateral spin valve by two different measurement techniques. The main results of this thesis are as following:
(一)Spin transfer torque investigated by micromagnetic
In this section, the spin transfer torque driven magnetization reversal in spin valve or magnetic tunnel junction (MTJ) is studied based on the extense Landau-Lifshitz-Gilbert equation by micromagnetic simulation.
(1) The critical current density of magnetization switching induced STT in spin valve and magnetic tunnel junction is systematically investigated under microwave magnetic field assisting by micromagnentic simulation. The simulation results indicate that critical current density and magnetization switching time can be obviously reduced due to the introduction of microwave magnetic field. And the frequency and amplitude of microwave magnetic field can strongly affect both critical current density and magnetization switching time. Critical current density and magnetization switching time decrease with increasing microwave amplitude, when microwave frequency is fixed. The minimums of critical current density and magnetization switching time can be obtained, when microwave frequency comes up to the optimal frequency, which is the natural ferromagnetic resonance frequency of spin valve and MTJ. At one time, the mechanism of magnetization switching changes from nucleation reversal to coherent rotation.
(2) It is investigated that the STT inducing magnetization reversal is assisted by three types microwave magnetic field (circularly polarized, in-plane linearly polarized and out-plane linearly polarized microwave magnetic field). The reducation of critical current density and magnetization switching time under circularly polarized microwave assisted is bigger than that under linearly polarized microwave assisted.
(3) Perpendicular anisotropy is very important, because it has an impact not only on dynamic magnetic, but also on STT inducing magnetization reversal. Micromagneitc simulation is carried out to build up a direct relationship between critical current density, natural resonance frequency and uniaxial magnetic anisotropy constant in In-plane spin valve and Out-plane MTJ. In in-plane spin valve, the critical current densiy and natural resonance frequency linearly decrease with the increasing uniaxial magnetic anisotropy constant. But the critical current densiy linearly increases with increasing uniaxial magnetic anisotropy constant in out-plane MTJ.
(4) Dynamic magetic susceptibilities and static magnentization configurations of permally antidot array with two dimensional periodic boundary condition (2DPBC) are investigated by micromagnetic simulation. The stripy-shaped domains appear in antidot array through the holes, which is originated from the shape anisotropy and magnetic dipolar interaction of neighboring repeating element. The natural resonance frequency can be adjusted by changing the inter-holes distance, inner radius and thinkness of antidot array film. The natural resonance frequency weakly varies with thinkness.
(二)Seebeck effect in lateral FM/NM hybrid nanstucture
In this section, the Seebeck effect is systematically investigated in three type lateral Ferromagnetic/Nonmagnetic (FM/NM) hybrid nanostructures. The Seebeck voltage in lateral FM/NM hybrid nanostructure can be obtained by the measurment of different resistance using ac lock-in technology or DC current measurement method. The bias-current dependence background voltage in the conventional nonlocal spin valve measurement is reasonably explained by the Seebeck voltage induced by Peltier effect and Joule heating. The Seebeck voltage curve as function of DC bias current, which is only induced by Joule heating, is symmetry as parabolic function of DC bias current at IDC=0mA axis. The origin of the Seebeck voltage asymmetry curve is the Peltier effect in lateral FM/NM hybrid. The temperature difference between two probes is about2K, when DC bias current is1.5mA.12%of the total thermal power is dispersed through the SiO2/Si substrate via the Cu wire. And there is not Seebeck effect in the same material.
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