垂直腔面发射激光器光输出特性的测试研究
摘要
垂直腔面发射激光器(VCSEL)是一种新型的半导体激光器,较传统的边发射激光器来说具有低阈值、单纵模工作、发散角小、动态调制频率高、易实现二维集成等优点,在光通信、光互联、图像信号处理等方面有着重要的应用前景。随着VCSEL的广泛应用,对其光输出特性的研究就变得非常重要,但是传统的仪器使用不方便,并且市场上现有此类仪器价格比较昂贵,不适宜普通实验室的普及。本论文研究了垂直腔面发射激光器光输出特性的测试,提出了在计算机中显示其光输出特性的测试方案,并设计了一套光输出特性的测试系统,可以将VCSEL的相关特性曲线通过图像显示和数据传输系统,将测试结果保存至计算机,代替了以前的特性记录仪,避免了大量图纸的出现,易于保存。该系统使用方便,成本适中,有一定的应用价值。
论文详细介绍了垂直腔面发射激光器光输出特性测试系统的设计方案:运用单片机技术,设计了锯齿波稳流电源,并可通过单片机调节其周期及峰值,以此电源作为垂直腔面发射激光器的驱动电源。论文设计了减法器电路和光电探测电路,前者来取得垂直腔面发射激光器的工作时的电压,后者采样电阻上的电压可以反映出垂直腔面发射激光器的光功率的变化情况。将此两种信号送入图像显示和数据传输系统,可以在计算机中获得两组特性测试曲线:伏安特性(V-I)曲线和光功率-电流(P-I)曲线。
论文运用设计出的该测试系统,通过改变相关参数,对垂直腔面发射激光器进行测试,得出一系列测试曲线,并保存至计算机。最后为进一步改善测试结果的精度及系统的稳定性,提出了该系统的改进方案。
As a new kind of semiconductor laser,vertical-cavity surface-emitting lasers(VCSEL) havesuch merits as low threshold,woking in single longitudinal mode,small angle of divergence,highdynamic modulating frequency,easily implemented two-dimension integration than conventionaledge emitting lasers.VCSEL have an significant implication prospect in opticalcommunication,optical interconnection,image signal processing,etc.With it’s increasingapplication,the research of VCSEL’s optical output characteristic becomes very important.Butthese instruments for the research are all much expensive,which are unfavorable for thepopularization in common labs.This dissertation studied the testing of VCSEL’s optical outputcharacteristic.We put forward a scheme and designed a system for the tesitng of VCSEL’s opticaloutput characteristic,which can be stored into the computer instead of the conventional recordinginstrument,which can result in large numbers of drawing sheets.This system have a certain extentvalue in use because of it’s convenient utilization and low cost.
This dissertation introduced the scheme of testing system of optical output characteristic ofVCSEL.We designed a stable current supply of saw-tooth wave with SCM,the cycle and peakvalue of which can adjusted. We also designed a subtraction circuit ,from which we could get thevoltage of VCSEL ,and a circuit of photoelectric detection,the voltage of resistance in whichcould reflect the change of VCSEL’s light power.We sent the two signals above to image displayand data transmitting system,so we can get the two testing curves, V-I curve and P-I curve,whichcan be stored into the computer.
We made a test of the VCSEL with the system we designed above and got a series of curveswhich were sent to computer for storage. At last ,we put forward a scheme of improvement forthe precision of testing results and stability of the system.
论文详细介绍了垂直腔面发射激光器光输出特性测试系统的设计方案:运用单片机技术,设计了锯齿波稳流电源,并可通过单片机调节其周期及峰值,以此电源作为垂直腔面发射激光器的驱动电源。论文设计了减法器电路和光电探测电路,前者来取得垂直腔面发射激光器的工作时的电压,后者采样电阻上的电压可以反映出垂直腔面发射激光器的光功率的变化情况。将此两种信号送入图像显示和数据传输系统,可以在计算机中获得两组特性测试曲线:伏安特性(V-I)曲线和光功率-电流(P-I)曲线。
论文运用设计出的该测试系统,通过改变相关参数,对垂直腔面发射激光器进行测试,得出一系列测试曲线,并保存至计算机。最后为进一步改善测试结果的精度及系统的稳定性,提出了该系统的改进方案。
As a new kind of semiconductor laser,vertical-cavity surface-emitting lasers(VCSEL) havesuch merits as low threshold,woking in single longitudinal mode,small angle of divergence,highdynamic modulating frequency,easily implemented two-dimension integration than conventionaledge emitting lasers.VCSEL have an significant implication prospect in opticalcommunication,optical interconnection,image signal processing,etc.With it’s increasingapplication,the research of VCSEL’s optical output characteristic becomes very important.Butthese instruments for the research are all much expensive,which are unfavorable for thepopularization in common labs.This dissertation studied the testing of VCSEL’s optical outputcharacteristic.We put forward a scheme and designed a system for the tesitng of VCSEL’s opticaloutput characteristic,which can be stored into the computer instead of the conventional recordinginstrument,which can result in large numbers of drawing sheets.This system have a certain extentvalue in use because of it’s convenient utilization and low cost.
This dissertation introduced the scheme of testing system of optical output characteristic ofVCSEL.We designed a stable current supply of saw-tooth wave with SCM,the cycle and peakvalue of which can adjusted. We also designed a subtraction circuit ,from which we could get thevoltage of VCSEL ,and a circuit of photoelectric detection,the voltage of resistance in whichcould reflect the change of VCSEL’s light power.We sent the two signals above to image displayand data transmitting system,so we can get the two testing curves, V-I curve and P-I curve,whichcan be stored into the computer.
We made a test of the VCSEL with the system we designed above and got a series of curveswhich were sent to computer for storage. At last ,we put forward a scheme of improvement forthe precision of testing results and stability of the system.
引文
[1] Scott W.Corzine,Randall S.Geels,Jeff W.Scott,Ran-hong Yan,and Larry A.Coldren,IEEE J.QuantumElectron.vol.25,no.6.pp.1513-1523,1989
[2] 谢树森，雷仕湛．光子技术．北京：科学出版社，2004 年：620-621，625
[3] 黄德修，刘雪峰．半导体激光器及其应用．北京：国防工业出版社，1999：1-7
[4] 江剑平．半导体激光器．北京:电子工业出版社,2000：169-170，180-181
[5] 伊贺健一，小山二三夫著，郑军译．面发射激光器基础与应用．北京：科学出版社，2002：1-2
[6] 赵路民． 980nm 高功率垂直腔面发射激光器的研制及测试分析[硕士论文]．长春：吉林大学，2004年5 月
[7] Y.Hayashi, T.Mnkainara, N.Hatori et al.. Lasing characteristics of low threshold oxide confinementInGaAs-GaAlAs vertical-cavity surface-emitting lasers.IEEE Photon. Technol. Lett., 1995,7(11):1234-1236
[8] Y. Qian, Z. H. Zhe, Y. H. Lo et al.. Long wavelength(1.3 ?m) vertical-cavity surface-emitting laser with awafer-bonded mirror and an oxygen-implanted confinement. Appl. Phys. Lett., 1997,71(1):25-27
[9] F.Koyama, S.Kinoshita, K Iga. Surface emitting semi-conductor laser. IEEE J. QuantumElectron.,1988,24(9):1845~1855
[10] S. Uchiyama, K. Iga. Two-dimensional array of GaInAsP/InP surface-emitting lasers. Electron. Lett.,1982,21(2):604~608
[11] 林世鸣. 半导体面发射微腔激光器及其集成面阵的应用. 物理，1994，23(10):604-608
[12] Y. Ohiso, K. Tateno, Y.Kohama et al.Flip-chip banded 0.85- ?m bottom-emitting vertical-cavity laserarray on an AlGaAs substrate. IEEE Photon. Technol. Lett., 1996,8(9):1115-1117
[13] W. W. Chow, K. D. Choquette, M. H. Crawford et al.. Design, fabrication, and performance of infraredand visible vertical-cavity surface-emiting lasers. IEEE J. Quantum Electron., 1997,33(10):1810~1824
[14] R. S. Geels, S. W. Corzine, L. A. Coldren. InGsAs vertical-cavity surface-emitting lasers. IEEE J.Quantum. Electron., 1991, 27(6):1359-1367
[15] J. L. Jewell, J. P. Harbison, A. Scherer et al. Vertical-cavity surface-emitting laser: design, growth,fabrication, characterization. IEEE J. Quantum Electron., 1991,27(6):1332-1346 J. A,
[16] K. S. Giboney, L B. Aronson, B. E. Lemoff. The ideal light source for datanets. IEEE Spectrum,1998,35(2):43-53
[17] 曹彬.垂直腔面发射激光器偏振特性和光谱特性的研究[硕士论文].天津：河北工业大学，2006 年3月
[18] H. Soda, K. Iga, C. Kitahara et al.. GsInAsP/Inp surface emitting injection lasers. Japan. J. Appl. Phys.,1979, 18(12):2329-2330
[19] G. Hasnain, K.Tai, L. Yang et al.. Performance of gain-guided surface emitting lasers with semiconductordistributed Bragg reflectors. IEEE J. Quantum Electron.,1991,27(6):1377-1385
[20] 国家自然科学基金委员会. 学科发展战略调研报告―光学与光电子学．北京：科学出版社，1991
[21] S. Kamiyama, T. Uenoyama, M. Mannok et al.. Analysis of GaInP-AlGaInP compressivemultiple-quantum-well laser. IEEE J. Quantum Electron., 1994,30(6):1363-1368
[22] B. J. Thibeault, K. Bertilsson, E. R. Hegblom et. al.. High-speed characteristics of low-optical lossoxide-apertured vertical-cavity lasers. IEEE Photon. Technol. Lett., 1997,9(1):11-13
[23] A. Kasukawa, T. Namegaya, T.Fukushima et al.. 1.3 ?m InGaP-InP strained layer quantum well laserdiodes grown by metalorganic chemical vapor deposition. IEEE J. Quantum Electron.,1993,29(6):1528-1535
[24] P J. A. Thijs, L. F. Tiemeijer, P. I. Kuindersma et al.. High-performance 1.5 ?m wavelengthInGaAs-InGaAsP strained quantum well lasers and amplifiers. IEEE J. Quantum Electron.,1991,27(6):1426-1436
[25] H. Ternkin, T. Tanbun-Ek,R. A. Logan. Strained InGaP-InP quantum well lasers. Appl. Phys. Lett.,1990,56(26):465-467
[26] 晏长岭.垂直腔面发射激光器的研制及特性分析[博士论文].长春：中科院长春光学精密机械与物理研究所，2000 年11 月
[27] C. J. Chang-Hansnain. VCSELs: Advance and future prospects. OPN Optics & Photonics News,1998,9(5): 34-39
[28] S. Y. Hu, J. Ko, L. A. Coldren. Hight-performance densely packed vertical-cavity photonic integratedemitter arrays for direct-coupled WDM aoolication. IEEE Photon. Technol. Lett., 1998,10(6): 766-768
[29] R. F. Kazainov, M. R. Pinto. Carrier transport in laser heterostructures. IEEE J. Quantum Electron.,1994,30(1):49-53
[30] T. Namegaya, R. Katsumi, N. Iwai et al.. 1.48 ?m high-power GaInAsP-InP graded-indexseparate-confinement-heterostructure multiple-quantum-well laser diodes. IEEE J. Quantum Electron.,1993,29(6):1924-1931
[31] D. L. Huffnker. Native-oxide defined ring contact for low threshold vertical-cavity lasers. Appl. Ohys.Lett., 1994,65(1):97-99
[32] T. Nagahori, M. Itoh, I. Watanabe et al.. 150Mbits ?1 ch ?1 12-channel optical parallel interface using anLED and a PD array. Opt. Quantum Electron., 1992,24(4): S479-S485
[33] 郭长志，陈水莲. 分布反射面发射垂直微腔半导体激光器的微腔效应．物理学报，1997，46（9）：1731-1743
[34] 国家自然科学基金委员会. 学科发展战略调研报告―光学与光电子学．北京：科学出版社，1991
[35] M. R. Feldman, S. C. Esener, C. C. Guest et al.. Comparison between optical and electronic interconnectsbased on power and speed considerations. Appli. Opt., 1988, 27(6): 1742-1751
[36] Y. M. Wang, D,J. Muehlner, C. C. Faudskar et al.. Technology development of a high-density 32-channel16Gb/s optical date link for optical interconnection applications for the optoelectronic technologyconsortium (OETC). IEEE J. Lightwave Technol., 1995,13(6): 995-1015
[37] T. Nagahori, M. Itoh, I. Watanabe et al.. 150Mbits ?1 ch ?1 12-channel optical parallel interface using anLED and a PD array. Opt. Quantum Electron., 1992,24(4): S479-S485
[38] Y. Yamamoto, S. Machida, G. Bjork. Micro-cavity semiconductor lasers with controlled spontaneousemission. Opt. Quantum Electron.,1992,24(2):S215-S243
[39] D. G. Deppe, D.L. Huffaker. Quantum well and quantum dot light emitters confined inoxide-semiconductor microcavities. OPN Optics & Photonics New, 1998,9(1):30-33
[40] 任大翠等.异质结构对半导体激光器输出特性的影响.长春光学精密机械学院院报，第23 卷第1 期，2003 年3 月
[41] 刘旭升.高功率短脉冲半导体激光器驱动电源的研制[硕士论文].天津：天津工业大学，2005 年12月
[42] 赵学泉，张国华．电源电路．北京：电子工业出版社，1995：224-225
[43] 胡汉才．单片机原理及其接口技术．北京：清华大学出版社，2004：300-304
[44] 安毓英，曾小东.光学传感与测量．北京:电子工业出版社，2001：103-104，130-134
[45] 杨臣华，梅遂生，林钧挺．激光与红外技术手册．北京：国防工业出版社，1990：725-726
[46] 张广军．光电测试技术．北京：中国计量出版社，2003：145-147
[47] 童诗白，华成英．模拟电子技术基础.北京：高等教育出版社，2001：320-321
[48] 张义和,陈敌北.例说8051.北京:人民邮电出版社,2006:255-259
[49] 李相银,姚敏玉,李卓等.激光原理技术及应用.哈尔滨:哈尔滨工业大学出版社,2004:285-287
[50] 杨小丽.光电子技术基础.北京:北京邮电大学出版社,2005:233-240
[51] 周炳琨,高以智,陈家骅. 激光原理. 北京:国防工业出版社,1980
[2] 谢树森，雷仕湛．光子技术．北京：科学出版社，2004 年：620-621，625
[3] 黄德修，刘雪峰．半导体激光器及其应用．北京：国防工业出版社，1999：1-7
[4] 江剑平．半导体激光器．北京:电子工业出版社,2000：169-170，180-181
[5] 伊贺健一，小山二三夫著，郑军译．面发射激光器基础与应用．北京：科学出版社，2002：1-2
[6] 赵路民． 980nm 高功率垂直腔面发射激光器的研制及测试分析[硕士论文]．长春：吉林大学，2004年5 月
[7] Y.Hayashi, T.Mnkainara, N.Hatori et al.. Lasing characteristics of low threshold oxide confinementInGaAs-GaAlAs vertical-cavity surface-emitting lasers.IEEE Photon. Technol. Lett., 1995,7(11):1234-1236
[8] Y. Qian, Z. H. Zhe, Y. H. Lo et al.. Long wavelength(1.3 ?m) vertical-cavity surface-emitting laser with awafer-bonded mirror and an oxygen-implanted confinement. Appl. Phys. Lett., 1997,71(1):25-27
[9] F.Koyama, S.Kinoshita, K Iga. Surface emitting semi-conductor laser. IEEE J. QuantumElectron.,1988,24(9):1845~1855
[10] S. Uchiyama, K. Iga. Two-dimensional array of GaInAsP/InP surface-emitting lasers. Electron. Lett.,1982,21(2):604~608
[11] 林世鸣. 半导体面发射微腔激光器及其集成面阵的应用. 物理，1994，23(10):604-608
[12] Y. Ohiso, K. Tateno, Y.Kohama et al.Flip-chip banded 0.85- ?m bottom-emitting vertical-cavity laserarray on an AlGaAs substrate. IEEE Photon. Technol. Lett., 1996,8(9):1115-1117
[13] W. W. Chow, K. D. Choquette, M. H. Crawford et al.. Design, fabrication, and performance of infraredand visible vertical-cavity surface-emiting lasers. IEEE J. Quantum Electron., 1997,33(10):1810~1824
[14] R. S. Geels, S. W. Corzine, L. A. Coldren. InGsAs vertical-cavity surface-emitting lasers. IEEE J.Quantum. Electron., 1991, 27(6):1359-1367
[15] J. L. Jewell, J. P. Harbison, A. Scherer et al. Vertical-cavity surface-emitting laser: design, growth,fabrication, characterization. IEEE J. Quantum Electron., 1991,27(6):1332-1346 J. A,
[16] K. S. Giboney, L B. Aronson, B. E. Lemoff. The ideal light source for datanets. IEEE Spectrum,1998,35(2):43-53
[17] 曹彬.垂直腔面发射激光器偏振特性和光谱特性的研究[硕士论文].天津：河北工业大学，2006 年3月
[18] H. Soda, K. Iga, C. Kitahara et al.. GsInAsP/Inp surface emitting injection lasers. Japan. J. Appl. Phys.,1979, 18(12):2329-2330
[19] G. Hasnain, K.Tai, L. Yang et al.. Performance of gain-guided surface emitting lasers with semiconductordistributed Bragg reflectors. IEEE J. Quantum Electron.,1991,27(6):1377-1385
[20] 国家自然科学基金委员会. 学科发展战略调研报告―光学与光电子学．北京：科学出版社，1991
[21] S. Kamiyama, T. Uenoyama, M. Mannok et al.. Analysis of GaInP-AlGaInP compressivemultiple-quantum-well laser. IEEE J. Quantum Electron., 1994,30(6):1363-1368
[22] B. J. Thibeault, K. Bertilsson, E. R. Hegblom et. al.. High-speed characteristics of low-optical lossoxide-apertured vertical-cavity lasers. IEEE Photon. Technol. Lett., 1997,9(1):11-13
[23] A. Kasukawa, T. Namegaya, T.Fukushima et al.. 1.3 ?m InGaP-InP strained layer quantum well laserdiodes grown by metalorganic chemical vapor deposition. IEEE J. Quantum Electron.,1993,29(6):1528-1535
[24] P J. A. Thijs, L. F. Tiemeijer, P. I. Kuindersma et al.. High-performance 1.5 ?m wavelengthInGaAs-InGaAsP strained quantum well lasers and amplifiers. IEEE J. Quantum Electron.,1991,27(6):1426-1436
[25] H. Ternkin, T. Tanbun-Ek,R. A. Logan. Strained InGaP-InP quantum well lasers. Appl. Phys. Lett.,1990,56(26):465-467
[26] 晏长岭.垂直腔面发射激光器的研制及特性分析[博士论文].长春：中科院长春光学精密机械与物理研究所，2000 年11 月
[27] C. J. Chang-Hansnain. VCSELs: Advance and future prospects. OPN Optics & Photonics News,1998,9(5): 34-39
[28] S. Y. Hu, J. Ko, L. A. Coldren. Hight-performance densely packed vertical-cavity photonic integratedemitter arrays for direct-coupled WDM aoolication. IEEE Photon. Technol. Lett., 1998,10(6): 766-768
[29] R. F. Kazainov, M. R. Pinto. Carrier transport in laser heterostructures. IEEE J. Quantum Electron.,1994,30(1):49-53
[30] T. Namegaya, R. Katsumi, N. Iwai et al.. 1.48 ?m high-power GaInAsP-InP graded-indexseparate-confinement-heterostructure multiple-quantum-well laser diodes. IEEE J. Quantum Electron.,1993,29(6):1924-1931
[31] D. L. Huffnker. Native-oxide defined ring contact for low threshold vertical-cavity lasers. Appl. Ohys.Lett., 1994,65(1):97-99
[32] T. Nagahori, M. Itoh, I. Watanabe et al.. 150Mbits ?1 ch ?1 12-channel optical parallel interface using anLED and a PD array. Opt. Quantum Electron., 1992,24(4): S479-S485
[33] 郭长志，陈水莲. 分布反射面发射垂直微腔半导体激光器的微腔效应．物理学报，1997，46（9）：1731-1743
[34] 国家自然科学基金委员会. 学科发展战略调研报告―光学与光电子学．北京：科学出版社，1991
[35] M. R. Feldman, S. C. Esener, C. C. Guest et al.. Comparison between optical and electronic interconnectsbased on power and speed considerations. Appli. Opt., 1988, 27(6): 1742-1751
[36] Y. M. Wang, D,J. Muehlner, C. C. Faudskar et al.. Technology development of a high-density 32-channel16Gb/s optical date link for optical interconnection applications for the optoelectronic technologyconsortium (OETC). IEEE J. Lightwave Technol., 1995,13(6): 995-1015
[37] T. Nagahori, M. Itoh, I. Watanabe et al.. 150Mbits ?1 ch ?1 12-channel optical parallel interface using anLED and a PD array. Opt. Quantum Electron., 1992,24(4): S479-S485
[38] Y. Yamamoto, S. Machida, G. Bjork. Micro-cavity semiconductor lasers with controlled spontaneousemission. Opt. Quantum Electron.,1992,24(2):S215-S243
[39] D. G. Deppe, D.L. Huffaker. Quantum well and quantum dot light emitters confined inoxide-semiconductor microcavities. OPN Optics & Photonics New, 1998,9(1):30-33
[40] 任大翠等.异质结构对半导体激光器输出特性的影响.长春光学精密机械学院院报，第23 卷第1 期，2003 年3 月
[41] 刘旭升.高功率短脉冲半导体激光器驱动电源的研制[硕士论文].天津：天津工业大学，2005 年12月
[42] 赵学泉，张国华．电源电路．北京：电子工业出版社，1995：224-225
[43] 胡汉才．单片机原理及其接口技术．北京：清华大学出版社，2004：300-304
[44] 安毓英，曾小东.光学传感与测量．北京:电子工业出版社，2001：103-104，130-134
[45] 杨臣华，梅遂生，林钧挺．激光与红外技术手册．北京：国防工业出版社，1990：725-726
[46] 张广军．光电测试技术．北京：中国计量出版社，2003：145-147
[47] 童诗白，华成英．模拟电子技术基础.北京：高等教育出版社，2001：320-321
[48] 张义和,陈敌北.例说8051.北京:人民邮电出版社,2006:255-259
[49] 李相银,姚敏玉,李卓等.激光原理技术及应用.哈尔滨:哈尔滨工业大学出版社,2004:285-287
[50] 杨小丽.光电子技术基础.北京:北京邮电大学出版社,2005:233-240
[51] 周炳琨,高以智,陈家骅. 激光原理. 北京:国防工业出版社,1980