硅太阳电池少数载流子寿命研究与测量
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摘要
本文通过对测试少数载流子寿命的各种方法进行分析后提出了一种新的
测量成品太阳电池基区少数载流子寿命的方法,这种方法通过分析太阳电池的
Ⅰ-Ⅴ特性得到基区少数载流子寿命与太阳电池开路电压、短路电流的关系。同
时考虑了串联电阻、并联电阻对开路电压、短路电流的影响,得到了太阳电池
基区少数载流子寿命与开路电压、短路电流、串联电阻和并联电阻的关系。通
过测试成品电池的Ⅰ-Ⅴ特性得到开路电压、短路电流、串联电阻和并联电阻的
值,计算得到饱和暗电流和太阳电池基区少数载流子寿命。这种测量是在电池
制备完成后进行的。
该方法的特点是,可以结合准稳态光电导测试方法共同监控工艺过程中的少
数载流子寿命变化,从而完善了太阳电池工艺过程中少数载流子寿命的全程监
控。
本论文实验部分完全按照工业化流程在不同的条件下制作太阳电池,在每一
步流程后监控太阳电池少数载流子寿命,得到了较为优化的扩散条件和氧化条
件。通过实验对比验证了该方法是可行的。该测量方法完善了在太阳电池工艺
过程中对少数载流子寿命变化的监控。
It is a new technique that using I-V character to measure minority lifetime in solar cell base region for finished solar cells. The method is acquired by analyzing the relationship of carrier lifetime and short circuit current and open circuit voltage. Through measuring I-V character of solar cells, short circuit current and open circuit voltage and series resistant and shunt resistant could be gained, and then minority carrier lifetime and dark saturation current are calculated by the new method.Specially, the new method can be used to monitor the solar cells minority carrier lifetime with QSSpc during manufactured processing.That made minority carrier lifetime monitored in the whole manufactured processes pefectly.In our experiments, solar cells are manufactured according to stand industrial processes, and minority carrier lifetime is measured after each process to optimize diffusion conditions and oxidation conditions. The new method has been proved feasible by experimental contrast to measure base region minority carrier lifetime of solar cell. The new method could monitor manufacture processes perfectly.
测量成品太阳电池基区少数载流子寿命的方法,这种方法通过分析太阳电池的
Ⅰ-Ⅴ特性得到基区少数载流子寿命与太阳电池开路电压、短路电流的关系。同
时考虑了串联电阻、并联电阻对开路电压、短路电流的影响,得到了太阳电池
基区少数载流子寿命与开路电压、短路电流、串联电阻和并联电阻的关系。通
过测试成品电池的Ⅰ-Ⅴ特性得到开路电压、短路电流、串联电阻和并联电阻的
值,计算得到饱和暗电流和太阳电池基区少数载流子寿命。这种测量是在电池
制备完成后进行的。
该方法的特点是,可以结合准稳态光电导测试方法共同监控工艺过程中的少
数载流子寿命变化,从而完善了太阳电池工艺过程中少数载流子寿命的全程监
控。
本论文实验部分完全按照工业化流程在不同的条件下制作太阳电池,在每一
步流程后监控太阳电池少数载流子寿命,得到了较为优化的扩散条件和氧化条
件。通过实验对比验证了该方法是可行的。该测量方法完善了在太阳电池工艺
过程中对少数载流子寿命变化的监控。
It is a new technique that using I-V character to measure minority lifetime in solar cell base region for finished solar cells. The method is acquired by analyzing the relationship of carrier lifetime and short circuit current and open circuit voltage. Through measuring I-V character of solar cells, short circuit current and open circuit voltage and series resistant and shunt resistant could be gained, and then minority carrier lifetime and dark saturation current are calculated by the new method.Specially, the new method can be used to monitor the solar cells minority carrier lifetime with QSSpc during manufactured processing.That made minority carrier lifetime monitored in the whole manufactured processes pefectly.In our experiments, solar cells are manufactured according to stand industrial processes, and minority carrier lifetime is measured after each process to optimize diffusion conditions and oxidation conditions. The new method has been proved feasible by experimental contrast to measure base region minority carrier lifetime of solar cell. The new method could monitor manufacture processes perfectly.
引文
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[7] O. Schultz, S. W. Glunz, J. C. Goldschmidt, H. Lautenschlager, A. Leimenstoll, E. Schneiderlochner, G. P. Willeke, "Thermal oxidation processes for high-efficiency multicrystalline silicon solar cells" [A], Proc of 19th European Photovoltaic Solar Energy Conference, 7-11 June 2004, Paris.
[8] JoossW, McCann M, Fath P, Roberts S, Bruton TM., "Buried contact solar cells on multicrystalline silicon with optimized bulk and surface passivation" [A], Proc. 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3), Osaka, May 2003.
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[11] Nijs J. F., Szlufcik J., Poortmans J., Sivoththaman S., and Mertens R. E, "Advanced Manufacturing Concepts for Crystalline Silicon Solar Cells", IEEE TRAN. ELECTRON DEVICES, 1999, 46 (10): 1948-1969.
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[16] Preu R., Emanuel G., Untiedt D., Kiappert S., Schmidhuber H., Biro D., Voyer C., Wolke W.,Schneiderlochner E., "Innovative and efficient production processes for silicon solar cells and modules-SOLPRO Ⅳ", Proc of 19th European Photovoltaic Solar Energy Conference, 7-11 June 2004, Paris.
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[25] J.Boda, Gyorgy Ferenezi ,Method and apparatus for measuring minority carrier lifetime in semiconductor materials[Z],U.S.Patents.NO.5,406,214.
[26] T.Uematsu,Y.Nagata, T.Ohtsuka, "Characterization of surface recombination velocity at Si solar cell surface under high injection level" [J], Solar Energy materials &Solar cells, 1994,34,pp: 169.
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[31] A.Cuevas,R.A.Sinton, M.Kerr et al,"A contactless photoconductance technique to evaluate the quantum efficiency of solar cell emitters"[J], Solar Energy materials &Solar cells,2002,71, pp :295-312.
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[40] 查超麟,刘祖明等,多晶硅酸腐蚀表面织构的研究[J],太阳能学报,2003/增刊,2003年4月,P.1.
[41] 彭银生,“晶体硅太阳电池表面钝化、p—n结、铝背场及少数载流子寿命测量研究”[D],云南师范大学硕士学位论文,2003.
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[2] 谢建,刘祖明,李云苍,太阳能利用技术[M],北京:中国农业大学出版社,1999,PP:9—13.
[3] 李安定,太阳能光伏发电系统工程[M],北京:北京工业大学出版社,2001,PP:16—17.
[4] 赵玉文,林安中,晶体硅太阳电池及材料[J],太阳能学报,特刊/1999,Oct.1999,PP:85—94.
[5] 刘祖明,李杰慧,廖华等,晶体硅太阳电池制造技术新进展[A],第八届全国光伏会议论文集,2004,PP:802—805.
[6] Zhao J, Wang A, Green M, Ferrazza F. "Novel 19.8% efficient 'honeycomb' textured multicrystalline and 24.4% monocrystalline silicon solar cell" [J], Applied Physics Letters, 1998,73: 1991-1993.
[7] O. Schultz, S. W. Glunz, J. C. Goldschmidt, H. Lautenschlager, A. Leimenstoll, E. Schneiderlochner, G. P. Willeke, "Thermal oxidation processes for high-efficiency multicrystalline silicon solar cells" [A], Proc of 19th European Photovoltaic Solar Energy Conference, 7-11 June 2004, Paris.
[8] JoossW, McCann M, Fath P, Roberts S, Bruton TM., "Buried contact solar cells on multicrystalline silicon with optimized bulk and surface passivation" [A], Proc. 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3), Osaka, May 2003.
[9] Y. Bai, D.H. Ford, J. Rand and A. Barnett, "16.6% Efficient Silicon-FilmTM Polycrystalline Silicon Solar Cell"[A], Proc. 26th IEEE Photovoitaic Specialists Conference, Anaheim,September/October, 1997, pp. 35-38.
[10] 王斯成,马胜红,我国光伏发电的重要地位和展望[A],第八届全国光伏会议论文集,2004,PP:1—10.
[11] Nijs J. F., Szlufcik J., Poortmans J., Sivoththaman S., and Mertens R. E, "Advanced Manufacturing Concepts for Crystalline Silicon Solar Cells", IEEE TRAN. ELECTRON DEVICES, 1999, 46 (10): 1948-1969.
[12] Nasch P. M., Cherradi N., Mueller A., Seifert C., Geyer B., "The way to high-efficiency, low cost solar cells through thin wafer slicing by means of wire saw", Proc of 19th European Photovoitaic Solar Energy Conference, 7-11 June 2004, Paris.
[13] Chitre S. R., "A high volume cost efficient production macrostructuring process", Conf. Record 13th IEEE Photovoltaic Specialists Conf., Washington D C, 1978, pp.152-154.
[14] 查超麟,刘祖明等,多晶硅酸腐蚀表面织构的研究,太阳能学报,2003/增刊,2003年4月,P.1.
[15] R.R. Bilyalov, L. Stalmans, L. Schirone and C. Levy-Clement, "Use of porous silicon antireflection coating in multicrystalline silicon solar cell processing", IEEE Trans. Electron Devices [J], 1999, 46: 1-7.
[16] Preu R., Emanuel G., Untiedt D., Kiappert S., Schmidhuber H., Biro D., Voyer C., Wolke W.,Schneiderlochner E., "Innovative and efficient production processes for silicon solar cells and modules-SOLPRO Ⅳ", Proc of 19th European Photovoltaic Solar Energy Conference, 7-11 June 2004, Paris.
[17] Hofmann M., Schneiderlochner E., Wolke W., Preu R.., "Silicon nitride-silicon oxide stacks for solar cell rear side passivation", Proc of 19th European Photovoltaic Solar Energy Conference, 7-11 June 2004, Paris.
[18] 薄仕群,光致开路电压衰减法测量少数载流子的寿命[J],河北大学学报(自然科学版),1986:pp.62—66.
[19] 彭银生,“晶体硅太阳电池表面钝化、p—n结、铝背场及少数载流子寿命测量研究”[D],云南师范大学硕士学位论文,2003.
[20] K.L.Luke and L.J.Cheng, Analysis of the interaction of a laser pulse with a silicon wafer: Determinations of bulk lifetime and surface recombination velocity[J],J.Appl.Phys, 1987,61 (2282).
[21] J.Brody, A Rohatgi, Aristow, "Review and comparison of equations relating bulk lifetime and surface recombination velocity to effective lifetime measured under flash lamp illumination" [J],Solar Energy materials&Solar cells,2003,77,pp:293-301.
[22] S.C.Jain and R.Muralidhan,"Effect of emitter recombination on the open circuit voltage decay of a junction diode" [J],Solid-State Electr. 1981,24,pp: 1147.
[23] A. G. Aberle, "Crystalline silicon solar cells" [M],Australia: Center for Photovoltaic Engineering, University of New South Wales, 1999: pp.58—62.
[24] C.Berge,J.Schmidt, B.Lenkeit et al,"Comparison of effective carrier lifetimes in silicon determined by transient and quasi-steady-state photoconductance measurements"[Z],ISFH.
[25] J.Boda, Gyorgy Ferenezi ,Method and apparatus for measuring minority carrier lifetime in semiconductor materials[Z],U.S.Patents.NO.5,406,214.
[26] T.Uematsu,Y.Nagata, T.Ohtsuka, "Characterization of surface recombination velocity at Si solar cell surface under high injection level" [J], Solar Energy materials &Solar cells, 1994,34,pp: 169.
[27] R.A.Sinton, A.Cuevas."Contactless determination of current-voltage characteristics and minority carrier lifetimes in semiconductors from quasi-steady-state photoconductance data" [J].APpl phys lett, 1996, 69(17):2510-2512.
[28] R.A.Sinton,"Measuring and Monitoring Electronic Properties of Si During Industrial Material Preparation and Cell Fabrication"[A],NCPV and Solar Program Review Meeting 2003,pp:984-987.
[29] H.Mackel,A.Cuevas,"Spectral response of the photoconductance :a new technique for solar cell characterization"[A],ISES 2001 Solar World Congress,2001,pp:1-8.
[30] J.Schmidt,R.A.Sinton,"Defect characterization by temperature and injection-dependent lifetime spectroscopy" [A],3rd World Conference on Photovoltaic Energy Conversion,2003,pp:40-D7-04.
[31] A.Cuevas,R.A.Sinton, M.Kerr et al,"A contactless photoconductance technique to evaluate the quantum efficiency of solar cell emitters"[J], Solar Energy materials &Solar cells,2002,71, pp :295-312.
[32] Daniel MacDonald, Ronald A.Sinton, Andres Cuevas,"On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon" [J], Journal of applied physics, volume 89, number 5.
[33] A.Cuevas, Lifetime studies of multicrystalline silicon [A],NREL Conference, Colorado 1998.
[34] 刘恩科,朱秉升,罗晋生等,半导体物理[M],北京:国防工业出版社,2002,pp:123—131.
[35] 安其霖,曹国琛,李国欣等,太阳电池原理与工艺[M],上海:上海科学技术出版社,1984,PP:35—41.
[36] Hovel H J.Semiconductors and semimetals (Vol.11). In: Solar Cells [M], New York:Academic Press, 1975.Chap 3, pp: 52.
[37] 陈庭金,涂洁磊等,太阳能电池并联电阻的一种测量方法[J],半导体光电,1998,19(4),227—229.
[38] 厦门大学物理系半导体物理教研室编,半导体器件工艺原理[M],北京:人们教育出版社,1977,pp:348—377
[39] 孙晓峰、王海燕、卢景霄等,大面积多晶硅绒面的制备[J],半导体光电,2004,25(3),197—199.
[40] 查超麟,刘祖明等,多晶硅酸腐蚀表面织构的研究[J],太阳能学报,2003/增刊,2003年4月,P.1.
[41] 彭银生,“晶体硅太阳电池表面钝化、p—n结、铝背场及少数载流子寿命测量研究”[D],云南师范大学硕士学位论文,2003.
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