薄晶体硅太阳电池及其电极系统的研究
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摘要
降低成本和提高效率是太阳电池的两大研究主题，硅片占晶体硅太阳电池成本的主要部分，减少硅片材料用量是降低成本的主要途径之一。据此，晶体硅太阳电池正向薄片化方向发展。由于硅是间接带隙材料，厚度减薄会使其短路电流降低，开路电压亦受影响。另一方面在整个制作工艺中易碎，尤其在丝网印刷电极时，成品率低；电极烧结后，由于金属电极与硅片热胀失配，电池易弯曲给电池的组件封装带来困难，也易造成电池的破损。针对这些问题，本文对薄晶体硅太阳电池的工业化生产进行了实验研究，在电池结构和制作工艺上都采取了一些新的措施，并获得了好的实验结果。这些工艺措施是：
单晶硅绒面腐蚀制备工艺研究。从绒面的形成及减反射原理出发，经过反复的实验研究获得了比较理想的单晶硅制绒溶液配方，经测试，在400—1000nm波段，绒面反射率平均为11％，沉积TiO_2减反射膜后反射率平均为2％，达到了比较理想的减反射效果。好的绒面，对薄硅电池不仅是好的减反射结构，也是好的光陷阱结构。
电极浆料及对薄硅太阳电池性能的影响研究。通过实验，优化电极浆料，筛选出了薄硅太阳电池弯曲度最小(0.55mm)的铝背场结构浆料。
电极欧姆接触特性研究。从金属—半导体接触理论及丝网印刷烧结电极出发，研究了不同扩散表面掺杂浓度及不同表面介质情况下，金属—半导体接触电阻与电极烧结温度的关系。结果表明较高的磷扩散表面掺杂浓度有利于电极的接触，并获得了具有低比接触电阻(0.003Ωcm~2)的太阳电池优化工艺。
以上结果提高了薄晶体硅太阳电池的性能，对工业化生产具有参考价值。
Enhancement of conversion efficiency and reduction of production costs are two main research topics of solar cells. The silicon wafers contribute a lot to the total product cost of crystalline silicon solar cells. One way of lowering the wafer cost is by reducing the thickness of the silicon wafers. Crystalline silicon solar cells are having a trend towards using thin wafers. Reducing the thickness of the silicon wafers has two disadvantages because silicon is indirect band gap material, on one hand it reduces short circuit and has effects on the open-circuit voltage of solar cells, on the other hand silicon wafers are prone to break, especially in the process of screen printing electrode. After the firing of the electrode, the bending of the cell resulting from the mismatch between metal electrode and silicon wafers makes it more difficult in handling and encapsulation of these thin wafers, which will also result in the cell broken. Focusing on these problems stated above for thin crystalline silicon solar cells, this paper developed experiment research on its industrialization manufacture techniques. Some new techniques are applied to structure and process of the cell and gain better results. These techniques are as follows:
The investigation of monocrystalline silicon wafer surface texture technology, Based on the basic principles of surface texturing and
单晶硅绒面腐蚀制备工艺研究。从绒面的形成及减反射原理出发，经过反复的实验研究获得了比较理想的单晶硅制绒溶液配方，经测试，在400—1000nm波段，绒面反射率平均为11％，沉积TiO_2减反射膜后反射率平均为2％，达到了比较理想的减反射效果。好的绒面，对薄硅电池不仅是好的减反射结构，也是好的光陷阱结构。
电极浆料及对薄硅太阳电池性能的影响研究。通过实验，优化电极浆料，筛选出了薄硅太阳电池弯曲度最小(0.55mm)的铝背场结构浆料。
电极欧姆接触特性研究。从金属—半导体接触理论及丝网印刷烧结电极出发，研究了不同扩散表面掺杂浓度及不同表面介质情况下，金属—半导体接触电阻与电极烧结温度的关系。结果表明较高的磷扩散表面掺杂浓度有利于电极的接触，并获得了具有低比接触电阻(0.003Ωcm~2)的太阳电池优化工艺。
以上结果提高了薄晶体硅太阳电池的性能，对工业化生产具有参考价值。
Enhancement of conversion efficiency and reduction of production costs are two main research topics of solar cells. The silicon wafers contribute a lot to the total product cost of crystalline silicon solar cells. One way of lowering the wafer cost is by reducing the thickness of the silicon wafers. Crystalline silicon solar cells are having a trend towards using thin wafers. Reducing the thickness of the silicon wafers has two disadvantages because silicon is indirect band gap material, on one hand it reduces short circuit and has effects on the open-circuit voltage of solar cells, on the other hand silicon wafers are prone to break, especially in the process of screen printing electrode. After the firing of the electrode, the bending of the cell resulting from the mismatch between metal electrode and silicon wafers makes it more difficult in handling and encapsulation of these thin wafers, which will also result in the cell broken. Focusing on these problems stated above for thin crystalline silicon solar cells, this paper developed experiment research on its industrialization manufacture techniques. Some new techniques are applied to structure and process of the cell and gain better results. These techniques are as follows:
The investigation of monocrystalline silicon wafer surface texture technology, Based on the basic principles of surface texturing and
引文
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