纳米砷化镓（GaAs）薄膜的电化学制备与研究
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摘要
砷化镓(GaAs)是一种重要的Ⅲ-Ⅴ族直接带隙化合物半导体光电材料,在室温下(300K)其禁带宽度Eg=1.42eV,具有很高的电子迁移率、半导体特性以及光电特性,是目前发展大功率电子器件的最重要也是最基本的材料之一,深受国内外关注。广泛应用于微波和高速器件,光伏领域以及卫星数据传输、通信、军事等领域。
工业上制备GaAs材料的方法有很多,电化学沉积法在近年来屡有报道,一般分为采用不同的电沉积手段(主要有恒压电沉积法,恒流电沉积法,脉冲电流沉积法,脉冲电压沉积法等),以及提高阴极极化(主要包括不同的前驱液配比浓度及pH值,不同的基底材料,以及不同的络合剂对实验的影响)两种途径进行实验。本文中实验采用恒电压沉积法,以及脉冲电流沉积法,以金属Ga与As203为原料,在酸性前驱液中制备纳米级GaAs薄膜材料,并对其形貌、化学计量比以及光学特性进行了系统分析。主要结果如下：
(1)采用电化学恒压法,通过不同的表征手段,分析了GaAs薄膜的电化学合成原理,并且考察了在室温下电化学恒压合成GaAs薄膜实验中Ga与As的化学计量比、前驱液pH值、沉积电压值,以及退火温度与时间对GaAs薄膜形成的影响。同时,对薄膜的光学性能做了详细的分析。
(2)采用恒电压法制备的GaAs薄膜,成膜颗粒较大,颗粒均匀性较差,影响到薄膜的平整度。因此,本研究还通过脉冲电流沉积法,采用络合剂EDTA,合成了GaAs薄膜。通过研究络合剂的作用、脉冲电流占空比、峰值电流密度、退火条件对Ga与As的原子比、GaAs薄膜形貌的影响,得出脉冲电沉积GaAs薄膜的最佳参数,并研究了GaAs薄膜的光学特性。
Gallium arsenide (GaAs, Eg=1.42eV (300K)), was an important III-V group direct band gap compound semiconductor optoelectronic materials with high electron mobility, semiconductor characterization, and optical and electrical properties, which was also one of the most important and basic materials of the current development in high-power electronic devices. It was concerned by domestic and foreign researchers, and widely used in microwave and high-speed devices, the photovoltaic field and satellite data transmission, telecommunications, military and other fields.
There were many methods to get preparation of GaAs material in industrial. Electrodeposition which was generally used by different means (including constant voltage electrodeposition method, constant current electrodeposition method, pulse current deposition method, pulsed voltage deposition method, etc) to improve the cathode polarization (including the influence of different the ratio of precursor solution concentration and pH value, different substrates and different complexing agents on experiment). Constant voltage deposition and pulsed current deposition were adopted in this article, metal Ga and As2O3was used as raw materials, nano-scale GaAs thin film materials was prepared in the acidic precursor solution, and its morphology, stoichiometric ratio and the optical properties were analyzed systematically, and the main findings were as follows:
1. Used chemical CV method, by different means of characterization, we analyzed electrochemical synthesis of principles of GaAs films, and investigated the influence of stoichiometric ratio of Ga and As, precursor solution pH value, deposition voltage value, as well as annealing temperature and time on the formation of the GaAs film in the synthesis of GaAs thin film experiments at room temperature under electrochemical constant pressure condition, and made a detailed analysis of the optical properties of the films at the same time.
2The GaAs film which was prepared by constant voltage method was characteristic of large particles and poor uniformity, which affect the flatness of the film. Therefore, GaAs film in our research was synthetized with the pulse current deposition method, by the use of a complexing agent EDTA. Considering the effect of the complexing agent, the duty cycle of the pulse current, peak current density, the influence of the annealing conditions on the Ga and As atomic ratio, and the impact of the GaAs film morphology, the optimal parameters of the pulse electrodeposited GaAs films was obtained, meanwhile the optical properties of the GaAs film was studied.
工业上制备GaAs材料的方法有很多,电化学沉积法在近年来屡有报道,一般分为采用不同的电沉积手段(主要有恒压电沉积法,恒流电沉积法,脉冲电流沉积法,脉冲电压沉积法等),以及提高阴极极化(主要包括不同的前驱液配比浓度及pH值,不同的基底材料,以及不同的络合剂对实验的影响)两种途径进行实验。本文中实验采用恒电压沉积法,以及脉冲电流沉积法,以金属Ga与As203为原料,在酸性前驱液中制备纳米级GaAs薄膜材料,并对其形貌、化学计量比以及光学特性进行了系统分析。主要结果如下：
(1)采用电化学恒压法,通过不同的表征手段,分析了GaAs薄膜的电化学合成原理,并且考察了在室温下电化学恒压合成GaAs薄膜实验中Ga与As的化学计量比、前驱液pH值、沉积电压值,以及退火温度与时间对GaAs薄膜形成的影响。同时,对薄膜的光学性能做了详细的分析。
(2)采用恒电压法制备的GaAs薄膜,成膜颗粒较大,颗粒均匀性较差,影响到薄膜的平整度。因此,本研究还通过脉冲电流沉积法,采用络合剂EDTA,合成了GaAs薄膜。通过研究络合剂的作用、脉冲电流占空比、峰值电流密度、退火条件对Ga与As的原子比、GaAs薄膜形貌的影响,得出脉冲电沉积GaAs薄膜的最佳参数,并研究了GaAs薄膜的光学特性。
Gallium arsenide (GaAs, Eg=1.42eV (300K)), was an important III-V group direct band gap compound semiconductor optoelectronic materials with high electron mobility, semiconductor characterization, and optical and electrical properties, which was also one of the most important and basic materials of the current development in high-power electronic devices. It was concerned by domestic and foreign researchers, and widely used in microwave and high-speed devices, the photovoltaic field and satellite data transmission, telecommunications, military and other fields.
There were many methods to get preparation of GaAs material in industrial. Electrodeposition which was generally used by different means (including constant voltage electrodeposition method, constant current electrodeposition method, pulse current deposition method, pulsed voltage deposition method, etc) to improve the cathode polarization (including the influence of different the ratio of precursor solution concentration and pH value, different substrates and different complexing agents on experiment). Constant voltage deposition and pulsed current deposition were adopted in this article, metal Ga and As2O3was used as raw materials, nano-scale GaAs thin film materials was prepared in the acidic precursor solution, and its morphology, stoichiometric ratio and the optical properties were analyzed systematically, and the main findings were as follows:
1. Used chemical CV method, by different means of characterization, we analyzed electrochemical synthesis of principles of GaAs films, and investigated the influence of stoichiometric ratio of Ga and As, precursor solution pH value, deposition voltage value, as well as annealing temperature and time on the formation of the GaAs film in the synthesis of GaAs thin film experiments at room temperature under electrochemical constant pressure condition, and made a detailed analysis of the optical properties of the films at the same time.
2The GaAs film which was prepared by constant voltage method was characteristic of large particles and poor uniformity, which affect the flatness of the film. Therefore, GaAs film in our research was synthetized with the pulse current deposition method, by the use of a complexing agent EDTA. Considering the effect of the complexing agent, the duty cycle of the pulse current, peak current density, the influence of the annealing conditions on the Ga and As atomic ratio, and the impact of the GaAs film morphology, the optimal parameters of the pulse electrodeposited GaAs films was obtained, meanwhile the optical properties of the GaAs film was studied.
引文
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[8]林健,牛沈军.VB-GaAs单晶生长技术[J].半导体技术,2007,32(4)：293-296.
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