硅片化学机械抛光加工区域中抛光液动压和温度研究
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摘要
化学机械抛光(Chemical Mechanical Polishing,简称CMP)作为集成电路(IntegratedCircuit,简称IC)制造的核心技术被广泛应用于集成电路制造过程中硅片表面的局部和全局平坦化加工。硅片化学机械抛光是一个非常复杂的过程,影响化学机械抛光过程的因素有很多,而硅片化学机械抛光加工区域中抛光液的动态压力和温度变化是影响表面非均匀性和材料去除率的关键因素之一。在集成电路制造中,采用的硅片尺寸不断增大,器件特征尺寸不断缩小,硅片化学机械抛光加工区域中抛光液动态压力和温度变化对硅片表面质量的影响越来越突出。目前,对IC制造中硅片CMP加工区域中抛光液动态压力和温度研究还不系统和完善,深入研究硅片CMP加工区域中抛光液动态压力和温度变化对最终实现高质量、超精密、无损伤加工表面有着非常重要的意义。
本文全面分析了IC制造中硅片CMP加工区域中抛光液动态压力和温度的研究现状及存在的问题。在此基础上,对IC制造中硅片CMP加工区域中抛光液动态压力和温度进行了深入研究。论文的主要研究工作为:
(1)根据润滑理论、渗流理论和微极流体理论,对大尺寸硅片CMP加工过程中含磨粒抛光液的流动性进行了研究,建立了抛光液流动的三维模型。研究了抛光液中悬浮纳米级磨粒的尺寸、浓度,抛光垫的多孔隙性能、厚度和表面粗糙度,硅片的尺寸和曲率,硅片和抛光垫的转速等关键因素对抛光液流动的影响,流体压力分布的实验结果与理论模拟的结果基本一致。
(2)根据化学机械抛光的特点,通过对现有实验设备进行改造,建立了硅片化学机械抛光试验台。该试验台实现了抛光头的主动旋转功能,抛光头的万向浮动功能,抛光载荷加载及调节功能,以及抛光液输送及流量控制功能。为进行化学机械抛光扭矩、抛光压力、摩擦力以及加工区域中抛光液动态压力和温度测量等研究提供了基础的试验平台。
(3)根据流体压力测量的基本原理,对硅片化学机械抛光加工区域中抛光液动态压力测量方法进行研究,提出了多点原位实时测量硅片化学机械抛光加工区域中抛光液动态压力的方法。在此基础上,对硅片化学机械抛光加工区域中抛光液流体压力测量系统进行了研究,建立了硅片CMP加工区域中抛光液动态压力实时检测系统,系统误差小于±0.25%,满足抛光液动态压力测试的要求。
(4)在CMP试验台上,运用所建立的抛光液动态压力测量系统,进行硅片化学机械抛光加工区域中抛光液流体动态压力测量实验,研究了抛光压力和相对速度对硅片化学机械抛光加工区域中抛光液流体动态压力的影响,结果表明:在抛光压力较小的情况下,硅片与抛光垫之间抛光液容易形成润滑承载膜,抛光液动态压力随着抛光压力的增加而增大;另一方面,在相同工况条件下,硅片与抛光垫之间的相对速度增加时,硅片与抛光垫之间抛光液产生的流体动态压力也增大。
(5)根据温度测量的基本原理,深入分析了影响硅片CMP加工区域中抛光液温度测量的各种因素,提出了基于接触法的多点原位实时测量硅片化学机械抛光加工区域中抛光液温度的方法。在此基础上,进行了硅片CMP加工过程中抛光液温度测量系统研究,建立了硅片化学机械抛光加工区域中抛光液温度测量系统,进行了抛光液温度测量的误差分析,并在测量中采取一些对应措施,排除干扰,减小了误差,使测量系统误差小于±0.47%。
(6)运用所建立的抛光液温度测量系统,进行了硅片化学机械抛光加工区域中抛光液温度测量实验研究,结果表明抛光压力、相对速度和抛光垫的摩擦系数等因素对加工区域抛光液温度变化具有决定性的影响。
Chemical mechanical polishing(CMP) as a critical technology in integrated circuit(IC) manufacturing is widely used to achieve a high degree of the local or global planarization of the substrate silicon wafer.The CMP process of silicon wafer usually affected by many factors is very complex.Both dynamic pressure and temperature of slurry in chemical-mechanical polishing of silicon wafer are two main factors influencing the nonuniformity and materials removal rate(MRR) of the silicon wafer during the CMP process. As the minimum resolvable feature size decreases and the silicon wafer size increases in IC manufacturing,the influence of dynamic pressure and temperature of slurry on the wafer surface quality becomes more and more prominent.However,the investigations on dynamic pressure and temperature of slurry in chemical-mechanical polishing of silicon wafer are still not clear at present.A further study on dynamic pressure and temperature of slurry in chemical-mechanical polishing of silicon wafer is important for finishing the silicon wafer with high quality,ultra-precision and damage-free surface.
In term of the adequate analysis of the research background,dynamic pressure and temperature of slurry in chemical-mechanical polishing of silicon wafer during IC manufacturing are mainly studied in this paper.The main research content and results are listed as follows:
Many vital factors such as size and concentration of suspending abrasives contained in the slurry,porous structure,thickness and surface roughness of polishing pad,size and curvature of silicon wafer,rotation speeds of both the silicon wafer and polishing pad,and so on,are taken into account.Flowing properties of the slurry in porous pad and pad roughness are analyzed and discussed in detail.Based on the lubrication theory and solid-liquid two-phase flow theory,a three-dimensional model of the large-sized silicon wafer under the light polishing pressure conditions is developed.The numerical analysis of the model under the quasi-steady states at the wafer scale is well done.The relationships between the important parameters and slurry flowing are discussed.
According to the properties of CMP,the experiment platform for the CMP silicon wafer, which fully takes advantage of the existing experimental equipments in our experimental lab, is developed.In the design of the experiment platform,driving rotation function and floating universal function of silicon wafer carrier are utilized.At the same time,realization of exerting the constant pressure on the wafer and controlling slurry flowing during CMP process is considered.All these efforts are beneficial to providing a steady experiment platform on the measurement of the torque,positive pressure,friction force,dynamic pressure and temperature of slurry during CMP of silicon wafer.
In light of the measurement theory of the hydrodynamic pressure,the measurement methods of dynamic pressure of slurry in the CMP of silicon wafer are studied,and a multiple-point in-situ and real-time measurement method of dynamic pressure of slurry in the CMP of silicon wafer is proposed.In accordance with the measurement method,the test system of dynamic pressure of slurry between the pad and silicon wafer during the CMP process of silicon wafer is addressed.Finally,a real-time test system of dynamic pressure of slurry is developed,which meets the real manufacturing process of the CMP of silicon wafer. The error of this test system is less than±0.25%.
Some test experiments of the dynamic pressure of slurry are carried out to study the effects of the polishing pressure on the back of the silicon wafer,the pad speed and the pad type on the properties of the slurry flowing between the silicon wafer and pad,depending on the experiment platform and the test system that have been established.The results show that the dynamic pressure of slurry in chemical-mechanical polishing of silicon wafer increases with the polishing pressure increasing,and a lubrication film of slurry between the silicon wafer and the pad can be formed under the light polishing pressure condition.On the other hand,the dynamic pressure of slurry in chemical-mechanical polishing of silicon wafer increases with the relative speed between the silicon wafer and the pad increasing under the same conditions All above mentioned results can provide the experimental basis for the adjustment of the back pressure and the optimization of the operating parameters to obtain the uniform and high-quality silicon wafer.
Considering the basic principle of the temperature measurement,the complicated factors that affect the temperature of slurry in the CMP of silicon wafer are fully analyzed,and a multiple-point in-situ and real-time measurement method of temperature of slurry in the CMP of silicon wafer,which is based on the contact method of temperature measurement,is presented.A measurement system of the temperature of slurry in chemical-mechanical polishing of silicon wafer is designed,and a equipment of the temperature of slurry in chemical-mechanical polishing of silicon wafer is developed on the basis of the experiment platform and the developed measurement method,and the error analysis of the temperature of slurry in chemical-mechanical polishing of silicon wafer is well done,at the same time,some measures that can reduce some errors and avoid the disturbances are taken,finally,the error of this test system that can be obtained is less than±0.47%.
On the basis of the developed measurement system,some test experiments about the temperature of slurry in chemical-mechanical polishing of silicon wafer are completed on the experiment platform.The results show that the polising pressure,the relative speed and friction behavior between the pad and the silicon wafer have important influence on the temperature of slurry in chemical-mechanical polishing of silicon wafer.
本文全面分析了IC制造中硅片CMP加工区域中抛光液动态压力和温度的研究现状及存在的问题。在此基础上,对IC制造中硅片CMP加工区域中抛光液动态压力和温度进行了深入研究。论文的主要研究工作为:
(1)根据润滑理论、渗流理论和微极流体理论,对大尺寸硅片CMP加工过程中含磨粒抛光液的流动性进行了研究,建立了抛光液流动的三维模型。研究了抛光液中悬浮纳米级磨粒的尺寸、浓度,抛光垫的多孔隙性能、厚度和表面粗糙度,硅片的尺寸和曲率,硅片和抛光垫的转速等关键因素对抛光液流动的影响,流体压力分布的实验结果与理论模拟的结果基本一致。
(2)根据化学机械抛光的特点,通过对现有实验设备进行改造,建立了硅片化学机械抛光试验台。该试验台实现了抛光头的主动旋转功能,抛光头的万向浮动功能,抛光载荷加载及调节功能,以及抛光液输送及流量控制功能。为进行化学机械抛光扭矩、抛光压力、摩擦力以及加工区域中抛光液动态压力和温度测量等研究提供了基础的试验平台。
(3)根据流体压力测量的基本原理,对硅片化学机械抛光加工区域中抛光液动态压力测量方法进行研究,提出了多点原位实时测量硅片化学机械抛光加工区域中抛光液动态压力的方法。在此基础上,对硅片化学机械抛光加工区域中抛光液流体压力测量系统进行了研究,建立了硅片CMP加工区域中抛光液动态压力实时检测系统,系统误差小于±0.25%,满足抛光液动态压力测试的要求。
(4)在CMP试验台上,运用所建立的抛光液动态压力测量系统,进行硅片化学机械抛光加工区域中抛光液流体动态压力测量实验,研究了抛光压力和相对速度对硅片化学机械抛光加工区域中抛光液流体动态压力的影响,结果表明:在抛光压力较小的情况下,硅片与抛光垫之间抛光液容易形成润滑承载膜,抛光液动态压力随着抛光压力的增加而增大;另一方面,在相同工况条件下,硅片与抛光垫之间的相对速度增加时,硅片与抛光垫之间抛光液产生的流体动态压力也增大。
(5)根据温度测量的基本原理,深入分析了影响硅片CMP加工区域中抛光液温度测量的各种因素,提出了基于接触法的多点原位实时测量硅片化学机械抛光加工区域中抛光液温度的方法。在此基础上,进行了硅片CMP加工过程中抛光液温度测量系统研究,建立了硅片化学机械抛光加工区域中抛光液温度测量系统,进行了抛光液温度测量的误差分析,并在测量中采取一些对应措施,排除干扰,减小了误差,使测量系统误差小于±0.47%。
(6)运用所建立的抛光液温度测量系统,进行了硅片化学机械抛光加工区域中抛光液温度测量实验研究,结果表明抛光压力、相对速度和抛光垫的摩擦系数等因素对加工区域抛光液温度变化具有决定性的影响。
Chemical mechanical polishing(CMP) as a critical technology in integrated circuit(IC) manufacturing is widely used to achieve a high degree of the local or global planarization of the substrate silicon wafer.The CMP process of silicon wafer usually affected by many factors is very complex.Both dynamic pressure and temperature of slurry in chemical-mechanical polishing of silicon wafer are two main factors influencing the nonuniformity and materials removal rate(MRR) of the silicon wafer during the CMP process. As the minimum resolvable feature size decreases and the silicon wafer size increases in IC manufacturing,the influence of dynamic pressure and temperature of slurry on the wafer surface quality becomes more and more prominent.However,the investigations on dynamic pressure and temperature of slurry in chemical-mechanical polishing of silicon wafer are still not clear at present.A further study on dynamic pressure and temperature of slurry in chemical-mechanical polishing of silicon wafer is important for finishing the silicon wafer with high quality,ultra-precision and damage-free surface.
In term of the adequate analysis of the research background,dynamic pressure and temperature of slurry in chemical-mechanical polishing of silicon wafer during IC manufacturing are mainly studied in this paper.The main research content and results are listed as follows:
Many vital factors such as size and concentration of suspending abrasives contained in the slurry,porous structure,thickness and surface roughness of polishing pad,size and curvature of silicon wafer,rotation speeds of both the silicon wafer and polishing pad,and so on,are taken into account.Flowing properties of the slurry in porous pad and pad roughness are analyzed and discussed in detail.Based on the lubrication theory and solid-liquid two-phase flow theory,a three-dimensional model of the large-sized silicon wafer under the light polishing pressure conditions is developed.The numerical analysis of the model under the quasi-steady states at the wafer scale is well done.The relationships between the important parameters and slurry flowing are discussed.
According to the properties of CMP,the experiment platform for the CMP silicon wafer, which fully takes advantage of the existing experimental equipments in our experimental lab, is developed.In the design of the experiment platform,driving rotation function and floating universal function of silicon wafer carrier are utilized.At the same time,realization of exerting the constant pressure on the wafer and controlling slurry flowing during CMP process is considered.All these efforts are beneficial to providing a steady experiment platform on the measurement of the torque,positive pressure,friction force,dynamic pressure and temperature of slurry during CMP of silicon wafer.
In light of the measurement theory of the hydrodynamic pressure,the measurement methods of dynamic pressure of slurry in the CMP of silicon wafer are studied,and a multiple-point in-situ and real-time measurement method of dynamic pressure of slurry in the CMP of silicon wafer is proposed.In accordance with the measurement method,the test system of dynamic pressure of slurry between the pad and silicon wafer during the CMP process of silicon wafer is addressed.Finally,a real-time test system of dynamic pressure of slurry is developed,which meets the real manufacturing process of the CMP of silicon wafer. The error of this test system is less than±0.25%.
Some test experiments of the dynamic pressure of slurry are carried out to study the effects of the polishing pressure on the back of the silicon wafer,the pad speed and the pad type on the properties of the slurry flowing between the silicon wafer and pad,depending on the experiment platform and the test system that have been established.The results show that the dynamic pressure of slurry in chemical-mechanical polishing of silicon wafer increases with the polishing pressure increasing,and a lubrication film of slurry between the silicon wafer and the pad can be formed under the light polishing pressure condition.On the other hand,the dynamic pressure of slurry in chemical-mechanical polishing of silicon wafer increases with the relative speed between the silicon wafer and the pad increasing under the same conditions All above mentioned results can provide the experimental basis for the adjustment of the back pressure and the optimization of the operating parameters to obtain the uniform and high-quality silicon wafer.
Considering the basic principle of the temperature measurement,the complicated factors that affect the temperature of slurry in the CMP of silicon wafer are fully analyzed,and a multiple-point in-situ and real-time measurement method of temperature of slurry in the CMP of silicon wafer,which is based on the contact method of temperature measurement,is presented.A measurement system of the temperature of slurry in chemical-mechanical polishing of silicon wafer is designed,and a equipment of the temperature of slurry in chemical-mechanical polishing of silicon wafer is developed on the basis of the experiment platform and the developed measurement method,and the error analysis of the temperature of slurry in chemical-mechanical polishing of silicon wafer is well done,at the same time,some measures that can reduce some errors and avoid the disturbances are taken,finally,the error of this test system that can be obtained is less than±0.47%.
On the basis of the developed measurement system,some test experiments about the temperature of slurry in chemical-mechanical polishing of silicon wafer are completed on the experiment platform.The results show that the polising pressure,the relative speed and friction behavior between the pad and the silicon wafer have important influence on the temperature of slurry in chemical-mechanical polishing of silicon wafer.
引文
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