摘要
本文的主要工作在于摸索优化镀膜工艺的方法。我们采用离子束溅射镀
膜装置在不同的工艺参数下,制备了一系列单层Mo膜、单层Si膜及Mo/Si
多层膜,通过原子力显微镜、X射线衍射仪、X射线能谱分析等方法,比较、
测量了薄膜表面粗糙度、界面扩散、晶体结构及化学成分的变化。
原子力显微镜测量结果表明,当束流电压超过某一阈值时,无论是Mo
膜还是Si膜,均能避免柱状生长;通过比较Mo-on-Si界面和Si-on-Mo界
面的扩散量,指出Mo-on-Si界面扩散是造成多层膜正入射反射率下降的主
要原因;X射线广角衍射分析表明,Mo膜及Si膜都是多晶结构,其中,Mo
膜为(110)晶向,Si膜为(400)晶向;最后,采用X射线能谱分析检测发
现,Mo膜及Si膜表面都不同程度地存在着氧化现象。
通过对上述工作的总结,我们有的放矢地优化了镀膜参数,制作的Mo/Si
多层膜在13nm处的正入射反射率达到60%。
本文得到国家自然科学基金和863高技术项目资助。
In this paper we report the results of surface roughness,
interface diffusion, crystal, chemical, and EUV characterization of
Mo/Si multilayers grown by ion beam sputtering deposition system. Our
goals are to optimize the deposition parameters. We make a series of
single Mo or Si layers and multilayers using various deposition
parameters, characterize them with atomic force microscope (AFM), two
types of x梤ay diffraction (XRD) and XPS. We find that Mo and Si film
can avoid columnar條ike growth once the beam voltage exceeds a
threshold, between the interdiffusion of Mo梠n桽i and Sj梠nMo,
Mo梠n桽i interface diffusion contributes more to the decrease of
reflectivity, the high梐ngle 6?0 XRD spectra show that the Mo and
Si layers are polycrystalline with (110) and (400) texture, and XPS
results indicate all the Mo and Si layers have oxide on the surface.
According to the upper analysis, we optimize the deposition
parameters successfully, and improve the normal梚ncidence
reflectance of Mo/Si multiplayer up to 60% at l3nm.
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