车载电子设备的电磁兼容研究
详细信息    本馆镜像全文|  推荐本文 |  |   获取CNKI官网全文
摘要
本文以电力机车用110V开关电源的电磁兼容性设计为例,研究了车载电子设备的电磁兼容性原则。内容涉及到该设备电磁兼容预测性模型的建立,提取了减小电磁干扰的原则,用于指导其设计,成功通过了铁标TB/T3021-2001中所规定的电磁兼容试验,该产品电磁兼容性设计的成功为车载电子设备的电磁兼容性设计提供了借鉴。
     为了使得预测的电磁干扰水平和实际接近,首先对大功率开关器件进行了高频建模,在分析干扰耦合途径的基础上,对无源元件的寄生参数进行了提取,同时提取了主回路器件连接导线的寄生参数,建立了电磁兼容的预测模型。在选定了某种元件布局的基础上,进行了软件模拟仿真,修改元器件布局方式,得到不同的干扰水平,鉴于软件仿真的直观性、方便性及精确建模基础上,结果可信度高。对于仿真中提取的原则,用于指导实践,减小了电磁兼容性设计的盲目性,降低了成本和开发周期。在减小辐射干扰水平方面,就理论上进行了探讨。由于电磁兼容学科本身的复杂性,以及依据装置工况不同干扰水平不同的特点,实际设计中采取了滤波和屏蔽措施。
     本文为车载电子设备的电磁兼容设计提供了借鉴的思路。通过预测性模型的建立可以减小设计中的盲目性和局限性。
This dissertation focuses on the rules of EMC for the electronic equipments used on rail vehicle, based on the EMC design of 110V SMPS for electric locomotive. It includes works for: establishing the forecasting EMC model for 110V SMPS, deriving the rules for guiding the EMC design of the equipment which has passed the EMC test guided by TB/T3021-2001. The rules of successful EMC design in the equipment can be used as reference for other electronic equipments used on rail vehicle.
    To make the forecasting EMI level match the level in fact, we establish the high frequency models of power semiconductors to improve the accuracy of models first. Then, we extract the parasitic parameters of the passive devices and the connected leads based on the analysis of coupling loops to establish the forecasting EMI model. On selecting the layout of components, simulating for the EMI is made. While the layout is changed, we can get different EMI levels. From which, guide can be extracted to optimize the design which can avoid the blindness and limitation of trade-off method on the design so cost can be lowered and cycle can be shortened. Research on depressing the radiation EMI level is only limited in theory in this dissertation. In fact, shield and filter measures are taken because of the complexity of EMC problems as well as different EMI levels of the equipment under different working conditions.
    The dissertation provides a reasonable method of reference on the EMC design of electric equipments on rail vehicle. Blindness and limitation in EMC design may be lowered by establishing the forecasting EMC model.
引文
[1] 张占松,蔡宣三.开关电源的原理与设计.北京:电子工业出版,1998.6:1~3
    [2] 湖北省电磁兼容学会.电磁兼容性原理及应用.北京:国防工业出版社,1996.4
    [3] 陈淑凤等.电磁兼容试验技术.北京:北京邮电大学出版社,2001.3
    [4] 鸥榕津,王朝英.IGBT的SPICE模拟.微电子学,1994,(4):29~32
    [5] 吴昕等.开关电源近场干扰的研究.电力电子技术,1999,(4):59~61
    [6] 李爱民等.超快速IGBT电路仿真模型及其参数灵敏度分析.电力电子技术,1996.(4):61~65
    [7] 袁义生,钱照明.分析传导EMI的功率MOSFET建模.浙江大学学报(工学版),2003.(2):198~201
    [8] 陈巨会等.开发SABER仿真系统模型应注意的几个问题.公安大学学报,1998.(3):23~27
    [9] 冯勇,叶斌.IGBT逆变器吸收电路的仿真分析与参数选择.电力机车技术,1999.(2):12~14
    [10] 周文定.引人注目的新型IGBT:NPT-IGBT.电焊机,2000,(4):36~39
    [11] 梁中华等.一种适合电路仿真的IGBT模型.沈阳工业大学学报.2001,(11):18~21
    [12] 袁寿财等.新颖的IGBT等效电路模型及参数提取和验证.电子器件.2003,(1):5~9
    [13] 郑琼林,郝荣泰.机车用50kVA IGBT逆变器的电磁兼容性设计.中国电机工程学报.2000,(5):35~41
    [14] 康劲松等.大功率IGBT直流特性的PSPICE仿真.同济大学学报.2002,(6):710~714
    [15] 黄碧琳,余素胜.高频功率变压器模型研究.福建师范大学学报(自然科学版).1999,(3):31~37
    [16] 袁义生等.用于传导EMI仿真的二极管高频模型的研究.电力电子技术.2001,(6):48~50
    [17] M.Kchikch等.应用StatMod对开关电路传导共模电流的建模.电力电子技术,2001,(5):45~47
    [18] 中华人民共和国铁路行业标准TB/T3021-2001.铁道机车车辆电子装置.
    [19] 丁强,何湘宁.采用Saber模型研究IGBT工作极限特性.电工技术学
    
    报,2001,(2):65~69
    [20] 曾敏等.IGBT逆变式主电路的仿真研究.南昌航空工业学院学报.2000,(1):6~8
    [21] 李卓成.IGBT高压逆变器的抗干扰原理与设计.电力电子技术,2002,(2):43~45
    [22] 王军等.IGBT的电路仿真模型及其特性模拟.河北科技大学学报,2001,(1):16~21
    [23] 金建铭等.电磁场有限元方法.西安:西安电子科技大学出版社,1998,1:76~82
    [24] 钱照明等.电力电子系统电磁兼容设计基础及干扰抑制技术.浙江:浙江大学出版社,1998:5~6
    [25] 谢处方等.电磁场与电磁波.北京:高等教育出版社,1979:348~351
    [26] 连级三.电力牵引控制系统.北京:中国铁道出版社,2001:1~44
    [27] Ben Tien, C. Hu. Determination of carrier lifetime from rectifier ramp recovery waveform. In: IEEE Trans. Electron Devices. vol. 9, No. 10. Oct. 1988
    [28] liff L. Ma, Lauritzen. Modeling of Power Diodes with the Lumped-Charge Modeling Techique. In: IEEE TRANSCTIONS ON POWER ELECTRONICS. VOL. 12. NO. 3. MAY 1997
    [29] Peter O. Lauritzen, Cliff L. Ma. A Simple Diode Model with Reverse Recovery. In: IEEE TRANSACTIONS ON POWER ELECTRONICS:VOL. 6. NO. 2. APRIL 1991
    [30] Cliff L. Ma, P. O. Lauritzen. A Simple Power Diode Model with Forward and Reverse Recovery. In:IEEE TRANSACTIONS ON POWER ELECTRONICS:: VOL. 8. NO. 4. OCTORBER 1993
    [31] Peter O. Lauritzen, Gert K. Andersen. A Basic IGBT Model with Easy Parameter Extraction. In:IEEE TRANSACTIONS ON POWER ELECTRONICS:: VOL. 6. NO. 3. OCTORBER 1994
    [32] Y. Yue, J. J. Lion, I. Batarseh. An Analutical Model for the Insulated-Gate Bipolar Transistor Under all Free-Carrier Injection Conditions. In:IEEE 1996
    [33] Ly. BENBAHOUCHE etal. NUMERICAL SIMULATION OF TRANSIENT CHARACTERISTICS OF POWER IGBT DEVICE AND A STUDY ON ITS SHORT
    
    CIRCUIT. In: International Conference on Electrical and Electronics Engineering ELECO 2003
    [34] A. R. Hefner and D. M. Diebolt. An experimentally verified IGBT Model implemented in the Saber simulator. In: IEEE Trans. Pwr. Elec., vol. 9, No. 5:532~542
    [35] M. Trivedi, K. Shenai. Parastitic extraction methodology for IGBTs. In: IEEE APEC Proc. Feb. 2000.
    [36] C. Patrick Yue. Physical Modeling of Spiral Inductors on Silicon. In: IEEE TRANSACTIONS ON ELECTRON DEVICES:VOL. 47 NO. 3 MARCH 2000: 560~563
    [37] C. Batard, D. M. Smith, H. Zelaya, C. J. Goodman, "New High Power Diode Model with Both Forward and Reverse Recovery", IEE Conference Publication on Power Electronics aud Variable-Speed Drivers, No. 399 October 1994:447~452
    [38] 钱照明等.电力电子系统电磁兼容设计基础及干扰抑制技术.浙江:浙江大学出版社,2000.12:20~22
    [39] 邱关源.电路.北京:高等教育出版社,1999.6:210~218
    [40] Ansoft公司.帮助文档How to Model a Solenoid.1994.6
    [41] 刘友梅等.韶山8型电力机车.北京:铁道出版社,1998.6:5~48
    [42] 钱照明等.电力电子系统电磁兼容设计基础及干扰抑制技术.浙江:浙江大学出版社,2000.12:31~55
    [43] 钱照明等.电力电子系统电磁兼容设计基础及干扰抑制技术.浙江:浙江大学出版社,2000.12:114~125
    [44] 钱照明等.电力电子系统电磁兼容设计基础及干扰抑制技术.浙江:浙江大学出版社,2000.12:72~81
    [45] 区健昌等.电子设备的电磁兼容性设计.北京:电子工业出版社,2003.9:100~109
    [46] 区健昌等.电子设备的电磁兼容性设计.北京:电子工业出版社,2003.9:79~81
    [47] 区健昌等.电子设备的电磁兼容性设计.北京:电子工业出版社,2003.9:338~340
    [48] 区健昌等.电子设备的电磁兼容性设计.北京:电子工业出版社,2003.9:138~146

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700