摘要
本论文分别全面论述了两种纳米薄膜TiO2 和SnO2:F 的原理、应用及
其制备方法,并通过一系列的检测得出以下结论:我们实验所制备的TiO2
纳米薄膜有良好的自洁净效应,SnO2:F 纳米薄膜有优秀的节能效果。
用溶胶-凝胶提拉法制备TiO2 纳米薄膜,将其镀在玻璃基底上,采用
紫外光辐射降解甲基橙溶液,并用分光光度计测定自洁净玻璃对有机物的
降解率(即光催化活性)为36.6%/h;利用紫外可见光分光光度计扫描测
量其透过率光谱曲线,其平均透过率>70%;用接触角测量仪测量其样品
表面的亲水性,接触角为5?,亲水性表面,停止光照后恢复疏水性,继续
光照仍能变为亲水性。不仅制备出了高质量的自洁净纳米薄膜玻璃,而且
上述测定方法已成功的应用于自洁净玻璃的研制与工业生产过程中的质
量检测。
采用超声雾化喷涂热解法,在预镀了二氧化硅的钠钙玻璃上沉积了透
明的、具有低薄膜电阻的掺氟二氧化锡薄膜。此膜可用于低辐射、导电薄
膜。将O H SnCl 2 4 5 . 和NH4F 溶于50%C2H5OH/50%H2O 的混合溶剂中,作
为起始溶液使用,因为这种配比既不易燃没有危险性又符合实验对溶剂挥
发性的要求。溶液中掺杂F/Sn 为1:4,这时制成的薄膜电阻最小。在掺
杂量小的时候,薄膜电阻随着掺杂量的增加而减小;在掺杂量达到一定值
以后,薄膜电阻随着掺杂量的增加而增大。采用以下最佳工艺条件:基板
温度为450℃,喷嘴至基板距离为60mm,载带气体流速为8 立升/分,沉
积时间为5 分钟,可制备出面电阻仅为2 sq / . ,热辐射反射率为97.9%
的高质量SnO2:F 纳米薄膜。
In this paper I discussed the theory application and preparation of the
two kinds of nanometer thin film, TiO2 and F-doped SnO2 nanometer thin film.
And I concluded by a series of measuring methods that the TiO2 coating glass
we prepared in my lab has good property of self-cleaning; the SnO2:F low
emission coating glass has high top-quality energy saving character.
We prepared TiO2 nanometer thin film by the method of Sol-Gel, and we
deposited it on a glass surface. We use the photo catalytic degradation of
methyl orange solution spectrophotometric method to measure the
degradation rate of organic matter, and the degradation rate is 36.6%/h; a
UV-Vis spectrophotometric scanning procedure to measure the transmittance
and it’s visible transmissivity is more than 70% A hydrophility measuring
method by using a contact angle meter measured the contact meter is about 5o,
so it is hydrophility. Without the ultraviolet radiation, the contact angle will
come back to become bigger, and then we continued to use ultraviolet
radiation on it, it became hydrophility again. The above-mentioned methods
have been used in research works and production process of self-cleaning
glass.
Transparent low-resistance SnO2: F films, suitable as a low-emissivity
and conducting coating, have been deposited on silica-coated soda lime glass
by pyrosol. SnCl4 ?5H2O and NH4F (F/Sn=1:4) dissolved in
50%C2H5OH/50%H2O solvent served as the starting solution. With the
parameters such as substrate temperature of 450 , distance between nozzle
and substrate of 60mm, carrier gas flow rate of 8L/MIN and deposition time of
5 min, the optimized SnO2: F films having a sheet resistance of about 2 ?/ sq
with infrared reflection about 97.9%, were deposited repeatedly.
引文