VO_2薄膜的电光开关性能
|
摘要
二氧化钒是一种具有热致相变特性的金属氧化物,随着温度的变化,大约在68℃附近,发生从低温半导体相到高温金属相的可逆相变。由于相变温度接近室温,且相变前后材料的光、电性能变化幅度较大,VO2在许多领域都有重要的应用价值。另外,VO2为纯电子型Mott-Hubbard相变材料,可以采用电子注入的方式来触发材料发生相似的相变效果,所以通过外加电场来场效应控制材料物理特性发生变化可以实现电光开关功能。
本文重点研究了采用直流磁控溅射法制备VO2薄膜的工艺方法,在硅衬底上制备了多种不同工艺条件下的钒氧化物薄膜。通过X射线衍射仪(XRD)、X射线光电子能谱仪(XPS)、扫描电子显微镜(SEM)、Raman散射光谱仪、傅立叶变换红外光谱仪(FTIR)、NKD薄膜分析仪等薄膜分析测试工具手段对这些样品成分、结构、表面形貌、光学特性等方面进行测试和分析,得出了钒氧化物薄膜制备工艺中的氧氩比和衬底温度等参量与薄膜性质的关系,得到了制备VO2薄膜的最佳工艺条件。
通过光刻和刻蚀工艺在制作了基于VO2薄膜的电光开关器件,在外加电场控制下,用Raman光谱仪测试了器件的相变特性,用FTIR测试了器件的开关性能特性。发现在外加电压大小达到4V以上时可以使VO2薄膜发生相变,且器件的反射率急剧增大,实现了开关功能。
Vanadium dioxide is a kind of metallic compound which undergoes a reversible semiconductor-metal phase transition near 68℃. The phase transition is accompanied by significant changes in optical and electrical properties. For the characteristics that its phase transition temperature is near to room temperature and its optical electrical performance have changed much during phase transition, VO2 has a great deal of potential applications. In addition, VO2 is a purely electronic Mott–Hubbard transition material, which phase transition can be similarly induced by adding more electron. So we can use electric field to change the phase estate of the material. In the same time, the physics state of the material is changed and the electro-optic switch purpose is achieved.
In the thesis, VO2 thin films are deposited on the silicon substrate by magnetron sputtering by different technics conditions. The composition, microstructure, surface shape and optics properties of VO2 thin films are studied with XRD, XPS, SEM, Raman dispersion spectrum apparatus. The best technics condition to produce VO2 thin film is found out.
VO2 thin film based electric-optical switching is made by lithography and etching process. Under the control of electric fields, the phase transition character of the device is tested by Raman dispersion spectrum apparatus, and the switching character is tested by FTIR. It is found out that above 4V, phase transition appears in VO2 thin film, and the reflectance of the device increases sharply. The switching ability is fulfilled.
本文重点研究了采用直流磁控溅射法制备VO2薄膜的工艺方法,在硅衬底上制备了多种不同工艺条件下的钒氧化物薄膜。通过X射线衍射仪(XRD)、X射线光电子能谱仪(XPS)、扫描电子显微镜(SEM)、Raman散射光谱仪、傅立叶变换红外光谱仪(FTIR)、NKD薄膜分析仪等薄膜分析测试工具手段对这些样品成分、结构、表面形貌、光学特性等方面进行测试和分析,得出了钒氧化物薄膜制备工艺中的氧氩比和衬底温度等参量与薄膜性质的关系,得到了制备VO2薄膜的最佳工艺条件。
通过光刻和刻蚀工艺在制作了基于VO2薄膜的电光开关器件,在外加电场控制下,用Raman光谱仪测试了器件的相变特性,用FTIR测试了器件的开关性能特性。发现在外加电压大小达到4V以上时可以使VO2薄膜发生相变,且器件的反射率急剧增大,实现了开关功能。
Vanadium dioxide is a kind of metallic compound which undergoes a reversible semiconductor-metal phase transition near 68℃. The phase transition is accompanied by significant changes in optical and electrical properties. For the characteristics that its phase transition temperature is near to room temperature and its optical electrical performance have changed much during phase transition, VO2 has a great deal of potential applications. In addition, VO2 is a purely electronic Mott–Hubbard transition material, which phase transition can be similarly induced by adding more electron. So we can use electric field to change the phase estate of the material. In the same time, the physics state of the material is changed and the electro-optic switch purpose is achieved.
In the thesis, VO2 thin films are deposited on the silicon substrate by magnetron sputtering by different technics conditions. The composition, microstructure, surface shape and optics properties of VO2 thin films are studied with XRD, XPS, SEM, Raman dispersion spectrum apparatus. The best technics condition to produce VO2 thin film is found out.
VO2 thin film based electric-optical switching is made by lithography and etching process. Under the control of electric fields, the phase transition character of the device is tested by Raman dispersion spectrum apparatus, and the switching character is tested by FTIR. It is found out that above 4V, phase transition appears in VO2 thin film, and the reflectance of the device increases sharply. The switching ability is fulfilled.
引文
[1] Morin F J. Oxide Which Show a Metal-to-Insulator Transition at the neel Temperature. Phys. Review Letter, 1959, 3:34~36
[2] S. M. Bulanam, T. S. Eriksson, G. A. Niklasson and C. G. Granqvist. Thermochromic VO2 films for energy-efficient windows. Solar Energy Material, 16(1987):347~363
[3] G. V. Jogrenson, J. C. Lee. Doped vanadium oxide for optical switching films. Solar Energy Materials, 14(1986):205~214
[4] Michael F. Beeker, A. Bruce Buckman, Rodger M. walser. Femtosecond laser excitation of the semiconductor-metal phase transition in VO2. Appl.phys.Lett.65 (12):1994, 1507~1512.
[5] Glen A, Nyberg and R. Buhrman. High optical contrast in VO2 thin film due to improved stoichiometry Thin Solid Films, 147, 1987:111~116
[6] R. M. Wentzcovitch, W. W. Schulz, and P. B. Allen. Phy. Rev. Lett. 72, 3389 (1994); T. M. Rice, H. Launois, and J. P. Pouget. Phy. Rev. Lett. 73, 3042 (1994).
[7] G. I. Petrov, V. V. Yakovlev, and J. Squier. Appl. Phys. Lett. 81, 1023 (2002).
[8] H Bialas, A Dillenz, H Downar, P Ziemann. Epitaxial relationships and electrical properties of Vanadium oxide films [J]. Thin Solid Films. 1999.338: 60-69.
[9] F C Case. Improved VO2 thin films for infrared switching [J]. Applied Optics, 1991, 30(28):4119~4123.
[10] Mark Borek, F Qian, Nagabushman and R K Singh. Pulsed laser deposition of oriented VO2 thin films on R-cut sapphire substrates [J]. Appl.Phys.Lett. 1993. 63(24):3288~3290.
[11] Kim D H, Kwok H S. Pulsed Laser deposition of VO2 thin films [J]. ppl.Phys.Lett. 1994.65(25): 3188~3190.
[12] R T Kivaisi, M Samiji. Optical and electrical properties of vanadium dioxide films prepared under optimized RF sputtering conditions [J]. Solar Energy Material and Solar Cell. 1999.57: 141~152.
[13]崔敬忠,达道安,姜万顺. VO2热致变色薄膜的结构和光电特性研究[J].物理学报. 1998.47 (3):454~460.
[14]崔敬忠,达道安,姜万顺.磁控溅射制备VO2热致变色薄膜的研究[J].真空与低温. 1997.3(3):128~131.
[15]崔敬忠,达道安,邱家稳.双靶磁控溅射制备掺W氧化钒薄膜的研究[J].真空与低温.1999.5(2): 77~80.
[16] Speck K R, Hu H S-W, Sherwin M E, Potember R S. Vanadium dioxide films grown from vanadium tetra-isopropoxide by the sol-gel Process [J]. Thin Solid Films. 1988. 165: 317~322.
[17] E. Sovero, D. Deakin, J. A. Higgins etal. Fast thin film vanadium dioxide microwaves. GaAs IC symposium. Rockwell Interntional Science Center. 1990. 101~103
[18]李向东,李福果,龙再川.全光通讯用MEMS光开关.半导体光电, 2001,22(1): 74～77
[19] Steffen Glockner, Rolf Goring. Piezoelectrically driven micro-optic fiber switches. Opt.Eng, 1998, 37(4):1229~1234
[20]申文等著.《无机化学丛书》. (第八卷)北京:科学出版社,1998.224~301
[21]林华,黄维刚. VO2的相变原理及影响相变的因素.功能材料,2004,增刊35:188~ 191.
[22] Grifiths CH, EastwoodHK [J]. JAPPIPhys,1974,45(5):2201~2206.
[23] Morin F J. Oxide which show a metal to insulator transition at the neel temperature [J].Phys.Review. Letter.1959. (3): 34~36.
[24]查子忠,王骐,李学春等. VO2薄膜对TEACO2激光响应特性的实验研究[J].光学学报. 1996.16(8): 1173~1176.
[25]黄道鑫.提钒炼钢(第1版)[M].北京:冶金工业出版社. 2000.
[26] H Bialas, A Dillenz, H Downar, P Ziemann. Epitaxial relationships and electrical properties of vanadium oxide films [J]. Thin Solid Films. 1999.338: 60~69.
[27] F C Case. Improved VO2 thin films for infrared switching [J]. Applied Optics, 1991, 30(28):4119~4123.
[28] Masaharu Fukuma, Sakea Zembutsu, Shintaro Miyazawa. Preparation of VO2 thin films and its direct optical bit recording characteristics[J]. Applied Optics. 1983. 22(2): 265~268.
[29] Moon-Hee Lee, Myoung-Geun Kim. RTA and stoichiometry effect on the Thermo chromic of VO2 thin films [J]. Thin Solid Films. 1996.286: 219~222.
[30] M Sambi, G Sangiovanni, G Granozzi. Growth and the structure of epitaxial VO2 at the TiO2(110) surface [J]. Physical Review B.1997.55(12): 7850~7858.
[31] P J Moller, Z S Li, T Egebjerg, M Sambi, G Granozzi. Synchrotron-radiation- induced photoemission study of VO2 thin films deposited on TiO2(110)[J]. Surface Science.1998.(402-404): 719~723.
[32] Y Muraoka, Y Ueda, Z Hiroi. Large modification of the metal-insulator transition temperature in strained VO2 films grown on TiO2 substrates [J]. Journal of Physics and Chemistry of Solids. 2002. 63: 965~967.
[33] Mark Borek, F Qian, V Nagabushman and R K Singh. Pulsed laser deposition of oriented VO2 thin films on R-cut sapphire substrates [J]. Appl.Phys.Lett.. 1993. 63(24):3288~3290.
[34] Kim D H, Kwok H S. Pulsed Laser deposition of VO2 thin films [J]. Appl.Phys.Lett. 1994.65(25):3188~3190.
[35] M Nagashima, H Wada. AFM observation for the oxygen deficiency effect on the surface morphology of VO2 thin films. Journal of Crystal Growth. 1997.179: 539~545.
[36] H J Schlag, W Scherber. New sputter process for VO2 thin films and examination with MIS-elements and C-V-measurements [J]. Thin Solid Films. 2000.366: 28~31.
[37] R T Kivaisi, M Samiji. Optical and electrical properties of vanadium dioxide films prepared under optimized RF sputtering conditions [J]. Solar Energy Material and Solar Cell. 1999.57: 141~152.
[38] J Verkelis, Z Bliznikas, K Breive. Vanadium oxide thin films and fixed-temperature heat sensor with memory [J]. Sensors and Actuators. 1998. A68: 338~343.
[39] Remke R L, Walser R M and Bene R W. The effect on interfaces on electronic switching in VO2 thin films [J]. Thin Solid Films. 1982. 97: 129~143.
[40] Jacques Livage. Optical and electrical properties of vanadium oxides synthesized from alkoxides[J]. Coordination Chemistry Reviews. 1999.(190~192): 391~403.
[41] Fabien Beteille, Leo Mazerolles, Jacques Livage. Microstructure and Metal-insulating transition of VO2 thin film [J]. Materials Research Bulletin. 1999.34(14-15): 2177~2184.
[42] Speck K R, Hu H S-W, Sherwin M E. Potember R S. Vanadium dioxide films grown from vanadium etra-isopropoxide by the sol-gel Process [J]. Thin Solid Films. 1988. 165: 317~322.
[43] Kavanagh K L, Nagub H M. The preparation and characterization of VO2 thin films[J]. Thin Solid Films. 1982. (91): 231~240.
[44] T J Hanlon, R E Walker, J A Coath,M A Richardson. Comparison between vanadium dioxide coatings on glass produced by sputtering, alkoxide and aqueous sol-gel methods [J]. Thin solid films.2002.405: 234~237.
[45]卢勇,林理彬.真空还原制备的VO2热致相变薄膜Raman光谱和红外光谱研究[J].功能材料.2001. 32(6): 657~659.
[46] Moon-Hee Lee, Jun-Seok. Better thermo chromic glazing of windows with anti-reflection coating [J]. Thin Solid Films. 2000. 365(1): 5~6.
[47] Moon-Hee Lee. Thermo chromic glazing of windows with better luminous solar transmittance [J]. Solar Energy Materials and Solar Cell. 2002.71: 537~540.
[48] F Cardillo Case. Modifications in the phase transition properties of predeposited VO2 films [J]. J.Vac.Sci.Technol.. 1984. A2(4): 1509~1512.
[49]付伟.激光致盲武器[J].光的世界1999. 12(2): 28~29.
[50]付伟.对激光致盲的防护与对抗[J].现代军事. 1995. (3): 54~55.
[51]牛燕雄,张雏,周增惠.低能激光武器的防护技术[J].光学技术. 1998. (1): 89~92.
[52]胡江华,周建勋,张保民.战场激光防护技术[J].光学技术. 1995. (3): 36~39.
[53]施德恒,许启富.基于光学原理的激光防护镜近况[J].光学技术. 1999. (4): 16~20.
[54]白光,吉禾.用VO2反射镜对激光振荡脉冲前沿整形[J].激光与光电子学进展. 1999.10:23~26.
[55] Hakim M O,Babulanam S.M.and Granqvist C.G. Electromechnical properties of VO2 thin film on polyimide substrate [J]. Thin Solid Films. 1988. (158): L49~L52.
[56] O. P. Konovalova, A. I. Sidorov. Interference systems of controllable mirrors based on vanadium dioxide for the spectral range 0.6-10.6μm.[J]. Journal of optical technology. 1999. 66(5): 13~21.
[57] Katsumi Kuwabara, Shoichi Lchikawa, Kohzo Sugiyama. Electrchromic display device with inorganic Lon Exchanger [J]. J Electrochem. Soc. 1988.135(10): 2432~2436.
[58] Chain E E. Optical properties of vanadium dioxide and vanadium pentoxide thin film [J]. Appl.Opt.. 1991. 30(19): 2782~2787.
[59] Nagashima M, Wada H. Near infrared optical properties of laser ablated VO2 thin films by ellipsometry[J]. Thin Solid Films. 1998. 312 (12): 61~65.
[60]吴锦雷.纳米光电功能薄膜. (第一版).北京:北京大学出版社. 2006.29~80
[61]卢进军,刘卫国.光学薄膜技术. (第一版).西安:西北工业大学出版社. 2005.109~134
[62]朱长纯,贺永宁.纳米电子材料与器件. (第一版).北京:国防工业出版社. 2006.158~194
[63]陈光华,邓金祥.新型电子薄膜材料. (第一版).北京:化学工业出版社. 2002.428~469
[2] S. M. Bulanam, T. S. Eriksson, G. A. Niklasson and C. G. Granqvist. Thermochromic VO2 films for energy-efficient windows. Solar Energy Material, 16(1987):347~363
[3] G. V. Jogrenson, J. C. Lee. Doped vanadium oxide for optical switching films. Solar Energy Materials, 14(1986):205~214
[4] Michael F. Beeker, A. Bruce Buckman, Rodger M. walser. Femtosecond laser excitation of the semiconductor-metal phase transition in VO2. Appl.phys.Lett.65 (12):1994, 1507~1512.
[5] Glen A, Nyberg and R. Buhrman. High optical contrast in VO2 thin film due to improved stoichiometry Thin Solid Films, 147, 1987:111~116
[6] R. M. Wentzcovitch, W. W. Schulz, and P. B. Allen. Phy. Rev. Lett. 72, 3389 (1994); T. M. Rice, H. Launois, and J. P. Pouget. Phy. Rev. Lett. 73, 3042 (1994).
[7] G. I. Petrov, V. V. Yakovlev, and J. Squier. Appl. Phys. Lett. 81, 1023 (2002).
[8] H Bialas, A Dillenz, H Downar, P Ziemann. Epitaxial relationships and electrical properties of Vanadium oxide films [J]. Thin Solid Films. 1999.338: 60-69.
[9] F C Case. Improved VO2 thin films for infrared switching [J]. Applied Optics, 1991, 30(28):4119~4123.
[10] Mark Borek, F Qian, Nagabushman and R K Singh. Pulsed laser deposition of oriented VO2 thin films on R-cut sapphire substrates [J]. Appl.Phys.Lett. 1993. 63(24):3288~3290.
[11] Kim D H, Kwok H S. Pulsed Laser deposition of VO2 thin films [J]. ppl.Phys.Lett. 1994.65(25): 3188~3190.
[12] R T Kivaisi, M Samiji. Optical and electrical properties of vanadium dioxide films prepared under optimized RF sputtering conditions [J]. Solar Energy Material and Solar Cell. 1999.57: 141~152.
[13]崔敬忠,达道安,姜万顺. VO2热致变色薄膜的结构和光电特性研究[J].物理学报. 1998.47 (3):454~460.
[14]崔敬忠,达道安,姜万顺.磁控溅射制备VO2热致变色薄膜的研究[J].真空与低温. 1997.3(3):128~131.
[15]崔敬忠,达道安,邱家稳.双靶磁控溅射制备掺W氧化钒薄膜的研究[J].真空与低温.1999.5(2): 77~80.
[16] Speck K R, Hu H S-W, Sherwin M E, Potember R S. Vanadium dioxide films grown from vanadium tetra-isopropoxide by the sol-gel Process [J]. Thin Solid Films. 1988. 165: 317~322.
[17] E. Sovero, D. Deakin, J. A. Higgins etal. Fast thin film vanadium dioxide microwaves. GaAs IC symposium. Rockwell Interntional Science Center. 1990. 101~103
[18]李向东,李福果,龙再川.全光通讯用MEMS光开关.半导体光电, 2001,22(1): 74～77
[19] Steffen Glockner, Rolf Goring. Piezoelectrically driven micro-optic fiber switches. Opt.Eng, 1998, 37(4):1229~1234
[20]申文等著.《无机化学丛书》. (第八卷)北京:科学出版社,1998.224~301
[21]林华,黄维刚. VO2的相变原理及影响相变的因素.功能材料,2004,增刊35:188~ 191.
[22] Grifiths CH, EastwoodHK [J]. JAPPIPhys,1974,45(5):2201~2206.
[23] Morin F J. Oxide which show a metal to insulator transition at the neel temperature [J].Phys.Review. Letter.1959. (3): 34~36.
[24]查子忠,王骐,李学春等. VO2薄膜对TEACO2激光响应特性的实验研究[J].光学学报. 1996.16(8): 1173~1176.
[25]黄道鑫.提钒炼钢(第1版)[M].北京:冶金工业出版社. 2000.
[26] H Bialas, A Dillenz, H Downar, P Ziemann. Epitaxial relationships and electrical properties of vanadium oxide films [J]. Thin Solid Films. 1999.338: 60~69.
[27] F C Case. Improved VO2 thin films for infrared switching [J]. Applied Optics, 1991, 30(28):4119~4123.
[28] Masaharu Fukuma, Sakea Zembutsu, Shintaro Miyazawa. Preparation of VO2 thin films and its direct optical bit recording characteristics[J]. Applied Optics. 1983. 22(2): 265~268.
[29] Moon-Hee Lee, Myoung-Geun Kim. RTA and stoichiometry effect on the Thermo chromic of VO2 thin films [J]. Thin Solid Films. 1996.286: 219~222.
[30] M Sambi, G Sangiovanni, G Granozzi. Growth and the structure of epitaxial VO2 at the TiO2(110) surface [J]. Physical Review B.1997.55(12): 7850~7858.
[31] P J Moller, Z S Li, T Egebjerg, M Sambi, G Granozzi. Synchrotron-radiation- induced photoemission study of VO2 thin films deposited on TiO2(110)[J]. Surface Science.1998.(402-404): 719~723.
[32] Y Muraoka, Y Ueda, Z Hiroi. Large modification of the metal-insulator transition temperature in strained VO2 films grown on TiO2 substrates [J]. Journal of Physics and Chemistry of Solids. 2002. 63: 965~967.
[33] Mark Borek, F Qian, V Nagabushman and R K Singh. Pulsed laser deposition of oriented VO2 thin films on R-cut sapphire substrates [J]. Appl.Phys.Lett.. 1993. 63(24):3288~3290.
[34] Kim D H, Kwok H S. Pulsed Laser deposition of VO2 thin films [J]. Appl.Phys.Lett. 1994.65(25):3188~3190.
[35] M Nagashima, H Wada. AFM observation for the oxygen deficiency effect on the surface morphology of VO2 thin films. Journal of Crystal Growth. 1997.179: 539~545.
[36] H J Schlag, W Scherber. New sputter process for VO2 thin films and examination with MIS-elements and C-V-measurements [J]. Thin Solid Films. 2000.366: 28~31.
[37] R T Kivaisi, M Samiji. Optical and electrical properties of vanadium dioxide films prepared under optimized RF sputtering conditions [J]. Solar Energy Material and Solar Cell. 1999.57: 141~152.
[38] J Verkelis, Z Bliznikas, K Breive. Vanadium oxide thin films and fixed-temperature heat sensor with memory [J]. Sensors and Actuators. 1998. A68: 338~343.
[39] Remke R L, Walser R M and Bene R W. The effect on interfaces on electronic switching in VO2 thin films [J]. Thin Solid Films. 1982. 97: 129~143.
[40] Jacques Livage. Optical and electrical properties of vanadium oxides synthesized from alkoxides[J]. Coordination Chemistry Reviews. 1999.(190~192): 391~403.
[41] Fabien Beteille, Leo Mazerolles, Jacques Livage. Microstructure and Metal-insulating transition of VO2 thin film [J]. Materials Research Bulletin. 1999.34(14-15): 2177~2184.
[42] Speck K R, Hu H S-W, Sherwin M E. Potember R S. Vanadium dioxide films grown from vanadium etra-isopropoxide by the sol-gel Process [J]. Thin Solid Films. 1988. 165: 317~322.
[43] Kavanagh K L, Nagub H M. The preparation and characterization of VO2 thin films[J]. Thin Solid Films. 1982. (91): 231~240.
[44] T J Hanlon, R E Walker, J A Coath,M A Richardson. Comparison between vanadium dioxide coatings on glass produced by sputtering, alkoxide and aqueous sol-gel methods [J]. Thin solid films.2002.405: 234~237.
[45]卢勇,林理彬.真空还原制备的VO2热致相变薄膜Raman光谱和红外光谱研究[J].功能材料.2001. 32(6): 657~659.
[46] Moon-Hee Lee, Jun-Seok. Better thermo chromic glazing of windows with anti-reflection coating [J]. Thin Solid Films. 2000. 365(1): 5~6.
[47] Moon-Hee Lee. Thermo chromic glazing of windows with better luminous solar transmittance [J]. Solar Energy Materials and Solar Cell. 2002.71: 537~540.
[48] F Cardillo Case. Modifications in the phase transition properties of predeposited VO2 films [J]. J.Vac.Sci.Technol.. 1984. A2(4): 1509~1512.
[49]付伟.激光致盲武器[J].光的世界1999. 12(2): 28~29.
[50]付伟.对激光致盲的防护与对抗[J].现代军事. 1995. (3): 54~55.
[51]牛燕雄,张雏,周增惠.低能激光武器的防护技术[J].光学技术. 1998. (1): 89~92.
[52]胡江华,周建勋,张保民.战场激光防护技术[J].光学技术. 1995. (3): 36~39.
[53]施德恒,许启富.基于光学原理的激光防护镜近况[J].光学技术. 1999. (4): 16~20.
[54]白光,吉禾.用VO2反射镜对激光振荡脉冲前沿整形[J].激光与光电子学进展. 1999.10:23~26.
[55] Hakim M O,Babulanam S.M.and Granqvist C.G. Electromechnical properties of VO2 thin film on polyimide substrate [J]. Thin Solid Films. 1988. (158): L49~L52.
[56] O. P. Konovalova, A. I. Sidorov. Interference systems of controllable mirrors based on vanadium dioxide for the spectral range 0.6-10.6μm.[J]. Journal of optical technology. 1999. 66(5): 13~21.
[57] Katsumi Kuwabara, Shoichi Lchikawa, Kohzo Sugiyama. Electrchromic display device with inorganic Lon Exchanger [J]. J Electrochem. Soc. 1988.135(10): 2432~2436.
[58] Chain E E. Optical properties of vanadium dioxide and vanadium pentoxide thin film [J]. Appl.Opt.. 1991. 30(19): 2782~2787.
[59] Nagashima M, Wada H. Near infrared optical properties of laser ablated VO2 thin films by ellipsometry[J]. Thin Solid Films. 1998. 312 (12): 61~65.
[60]吴锦雷.纳米光电功能薄膜. (第一版).北京:北京大学出版社. 2006.29~80
[61]卢进军,刘卫国.光学薄膜技术. (第一版).西安:西北工业大学出版社. 2005.109~134
[62]朱长纯,贺永宁.纳米电子材料与器件. (第一版).北京:国防工业出版社. 2006.158~194
[63]陈光华,邓金祥.新型电子薄膜材料. (第一版).北京:化学工业出版社. 2002.428~469