分布反馈式激光器中的光学布洛赫波和半导体激光器的理论、结构和工艺创新探索研究
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摘要
上世纪六十年代,随着第一个半导体激光器的问世以及低损耗光纤的研制成功,光通讯的时代降临。在之后短短的几十年间,半导体激光器从最简单的法布里珀罗腔发展到如今需要多次外延技术以及几十次的复杂制作工艺流程才能完成的单片集成大范围可调谐激光器。随着如今通讯系统的需求不断增加,光通讯系统对高性能半导体激光器的需求也在增加,半导体激光器的研发对系统的发展也至关重要,并且针对其他应用领域的研究也在不断进行。
本文研究了应用于光网络以及其他领域的半导体激光器的新理论,结构以及制作方法。本文的一个理论研究重点是分布反馈式半导体激光器中的光子寿命计算,分布反馈式半导体激光器由于内部含有光栅结构,其谐振腔的光子寿命一般无法用简单的理论方法来估算。本文将两个相对传播的光学布洛赫波的概念引入到分布反馈式半导体激光器中,用布洛赫波理论分析了分布反馈式激光器中的光子寿命以及激光器的阈值条件。光学布洛赫波的引入不仅可以给我们一个更加清晰的物理概念来理解分布反馈式激光器的物理本质,还可以更加容易得到分布反馈式半导体激光器简单速率方程模型中必须的光子寿命参数的解析表达式,使其计算更加简单。
本文的另一个研究重点是低成本大范围可调谐激光器的新结构和工艺方法。大范围低成本可调谐激光器一直是光通讯系统中的核心器件,现有的商用大范围可调谐激光器从性能上可以满足系统的需求,但其制作以及封装成本一直很高。本文提出了两种低成本可调谐激光器,并分别对它们进行了理论分析,器件设计,实验制作以及验证测试。第一种是基于半波耦合器的环形谐振腔可调谐半导体激光器。本文结合V型耦合腔激光器的游标效应以及环谐振腔提出了半波耦合环形谐振腔可调谐激光器。与传统的环形谐振腔激光器原理不同,半波耦合环形谐振腔激光器利用游标效应选模,不需要半径非常小的环形谐振腔作为滤波器选模,大大放宽了工艺限制,从而降低芯片制作成本。第二种低成本可调谐激光器是可以用普通接触式光刻技术制作的深亚微米刻蚀槽半导体激光器。传统刻蚀槽激光器一般需要非常昂贵而且耗时的高精度的光刻设备(电子束光刻)来制作深亚微米刻蚀槽,也有用普通的接触式光刻技术在法布里珀罗腔上制作1μm左右宽的刻蚀槽进行选模,但同时也会引入较大的损耗,所以两种方式都不适合低成激光器使用。本文研发出一种全新的用普通低成本接触式光刻技术制作深亚微米刻蚀槽的工艺,降低了亚微米深刻蚀槽的制作成本。运用该新工艺我们制作并测试了单模长刻蚀槽激光器以及周期性分布反馈刻蚀槽可调谐激光器,证明了该工艺可以作为低成本半导体激光器的一个可选方案。
In the1960s, the successful development of the first semiconductor laser together with the low-loss optical fiber enabled the optical communications networks. After a few decades, the semiconductor lasers used in the optical communication systems today are far more complex than the simplest FP lasers. The monolithic integrated widely tunable semiconductor lasers often require multiple epitaxy growth as well as dozens of complex fabrication steps With the advancement of the communication systems today, the demand for high performance semiconductor lasers is rapidly increasing, and the development of semiconductor lasers is critical for system improvements. The researches of semiconductor lasers for other applications also received great interest.
This thesis explores new theory, structure and fabrication method of semiconductor lasers, for applications in optical networks and beyond. The theoretical study of this thesis is focused on a new analytical method for calculating photon lifetime in distributed feedback semiconductor lasers. There is generally no simple theoretical approach to calculate the photon lifetime of the distributed feedback semiconductor lasers due to the periodic grating structures inside the laser cavity. We introduced the concept of conterpropagating optical Bloch waves in a distributed feedback laser and derived the photon lifetime and laser threshold condition. The introduction of the optical Bloch wave concept and the analytical expression of the photon lifetime in distributed feedback lasers not only give us a clearer physical insight but also make the calculation of photon lifetime much easier, which is essential for applying simple rate-equation based models.
Another focus of this thesis is to explore new structures and fabrication methods of low-cost widely tunable semiconductor lasers. Widely tunable semiconductor lasers is critical for next generation optical communication systems. The performance of existing commercial wide-range tunable lasers can meet the system requirements, but their production and packaging costs have been too high, limiting their use mainly to long-haul fiber-optic links. In this thesis, two types of low-cost tunable lasers are proposed, and the theoretical analysis, design, fabrication and characteriztion are studied. The first one is a tunable semiconductor laser based on half-wave coupled ring resonators with vernier effect. Different from the traditional ring resonator coupled lasers which need a ring resonator with very small radius as the mode-selection filter, the half-wave coupled ring resonator laser emplys the vernier effect, thereby reducing the cost of the chip fabrication by avoiding rings with small radius. The second low-cost tunable laser is the deep-submicron etched-slot semiconductor lasers based on standard UV lithography. Previously investigated etched-slot semiconductor lasers need high resolution lithography equipments (Electron Beam Lithography) to produce the deep-submicron slots which is very expensive and time-consuming. Some groups developed etched-slots around1μm wide into the Fabry-Perot cavity as mode selection defects which also introduce large optical loss in the cavity. In this thesis we developed a new low-cost process to fabricate deep-submicron slots with standard contact lithography. Based on this newly developed process, a single-mode etched-slot laser and a wavelength tunable laser with periodically distributed slots are fabricated and characterized. The new method has excellent potential for low cost fabrication of semiconductor lasers with deep-submicron features.
本文研究了应用于光网络以及其他领域的半导体激光器的新理论,结构以及制作方法。本文的一个理论研究重点是分布反馈式半导体激光器中的光子寿命计算,分布反馈式半导体激光器由于内部含有光栅结构,其谐振腔的光子寿命一般无法用简单的理论方法来估算。本文将两个相对传播的光学布洛赫波的概念引入到分布反馈式半导体激光器中,用布洛赫波理论分析了分布反馈式激光器中的光子寿命以及激光器的阈值条件。光学布洛赫波的引入不仅可以给我们一个更加清晰的物理概念来理解分布反馈式激光器的物理本质,还可以更加容易得到分布反馈式半导体激光器简单速率方程模型中必须的光子寿命参数的解析表达式,使其计算更加简单。
本文的另一个研究重点是低成本大范围可调谐激光器的新结构和工艺方法。大范围低成本可调谐激光器一直是光通讯系统中的核心器件,现有的商用大范围可调谐激光器从性能上可以满足系统的需求,但其制作以及封装成本一直很高。本文提出了两种低成本可调谐激光器,并分别对它们进行了理论分析,器件设计,实验制作以及验证测试。第一种是基于半波耦合器的环形谐振腔可调谐半导体激光器。本文结合V型耦合腔激光器的游标效应以及环谐振腔提出了半波耦合环形谐振腔可调谐激光器。与传统的环形谐振腔激光器原理不同,半波耦合环形谐振腔激光器利用游标效应选模,不需要半径非常小的环形谐振腔作为滤波器选模,大大放宽了工艺限制,从而降低芯片制作成本。第二种低成本可调谐激光器是可以用普通接触式光刻技术制作的深亚微米刻蚀槽半导体激光器。传统刻蚀槽激光器一般需要非常昂贵而且耗时的高精度的光刻设备(电子束光刻)来制作深亚微米刻蚀槽,也有用普通的接触式光刻技术在法布里珀罗腔上制作1μm左右宽的刻蚀槽进行选模,但同时也会引入较大的损耗,所以两种方式都不适合低成激光器使用。本文研发出一种全新的用普通低成本接触式光刻技术制作深亚微米刻蚀槽的工艺,降低了亚微米深刻蚀槽的制作成本。运用该新工艺我们制作并测试了单模长刻蚀槽激光器以及周期性分布反馈刻蚀槽可调谐激光器,证明了该工艺可以作为低成本半导体激光器的一个可选方案。
In the1960s, the successful development of the first semiconductor laser together with the low-loss optical fiber enabled the optical communications networks. After a few decades, the semiconductor lasers used in the optical communication systems today are far more complex than the simplest FP lasers. The monolithic integrated widely tunable semiconductor lasers often require multiple epitaxy growth as well as dozens of complex fabrication steps With the advancement of the communication systems today, the demand for high performance semiconductor lasers is rapidly increasing, and the development of semiconductor lasers is critical for system improvements. The researches of semiconductor lasers for other applications also received great interest.
This thesis explores new theory, structure and fabrication method of semiconductor lasers, for applications in optical networks and beyond. The theoretical study of this thesis is focused on a new analytical method for calculating photon lifetime in distributed feedback semiconductor lasers. There is generally no simple theoretical approach to calculate the photon lifetime of the distributed feedback semiconductor lasers due to the periodic grating structures inside the laser cavity. We introduced the concept of conterpropagating optical Bloch waves in a distributed feedback laser and derived the photon lifetime and laser threshold condition. The introduction of the optical Bloch wave concept and the analytical expression of the photon lifetime in distributed feedback lasers not only give us a clearer physical insight but also make the calculation of photon lifetime much easier, which is essential for applying simple rate-equation based models.
Another focus of this thesis is to explore new structures and fabrication methods of low-cost widely tunable semiconductor lasers. Widely tunable semiconductor lasers is critical for next generation optical communication systems. The performance of existing commercial wide-range tunable lasers can meet the system requirements, but their production and packaging costs have been too high, limiting their use mainly to long-haul fiber-optic links. In this thesis, two types of low-cost tunable lasers are proposed, and the theoretical analysis, design, fabrication and characteriztion are studied. The first one is a tunable semiconductor laser based on half-wave coupled ring resonators with vernier effect. Different from the traditional ring resonator coupled lasers which need a ring resonator with very small radius as the mode-selection filter, the half-wave coupled ring resonator laser emplys the vernier effect, thereby reducing the cost of the chip fabrication by avoiding rings with small radius. The second low-cost tunable laser is the deep-submicron etched-slot semiconductor lasers based on standard UV lithography. Previously investigated etched-slot semiconductor lasers need high resolution lithography equipments (Electron Beam Lithography) to produce the deep-submicron slots which is very expensive and time-consuming. Some groups developed etched-slots around1μm wide into the Fabry-Perot cavity as mode selection defects which also introduce large optical loss in the cavity. In this thesis we developed a new low-cost process to fabricate deep-submicron slots with standard contact lithography. Based on this newly developed process, a single-mode etched-slot laser and a wavelength tunable laser with periodically distributed slots are fabricated and characterized. The new method has excellent potential for low cost fabrication of semiconductor lasers with deep-submicron features.
引文
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