In AlN/GaN HEMT的研制与特性分析
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摘要
第三代半导体材料GaN具有击穿电压高、迁移率高、电子饱和速度大等优良特点。近年来AlGaN/GaN HEMT的研究已经取得很大的进展,但应力诱导的压电问题一直是AlGaN/GaN HEMT的主要问题之一。In组分为17%的InAlN能够与GaN完全匹配,消除压电极化,提高器件的可靠性。而InAlN/GaN HEMT的研究相对较少,尤其是在国内InAlN/GaN HEMT的研究才刚起步。在此背景下,本文主要针对InAlN/GaN HEMT进行了研究。
首先,本文完成了InAlN/GaN HEMT器件的研制,并测得有较好的直流和小信号特性。还对漏端的工艺进行了改进,研制出肖特基作漏端的AlGaN/GaN HEMT器件。肖特基作漏的器件在具有与常规器件相同功能的基础上,还使得击穿电压明显增大。而且,首次发现漏端肖特基的势垒高度越大,器件的击穿电压越大。
其次,对自主研制的InAlN/GaN异质结的陷阱进行了研究,通过电流崩塌和钝化前后材料方块电阻的变化,发现InAlN材料表面可能存在陷阱,并且利用肖特基的电容-电压的测试方法,对InAlN/GaN的陷阱密度进行了估算,然后采用低温退火的方法使得陷阱有一定的减少。此外,还研究了不同温度下退火对器件其它特性的影响。
最后,对InAlN/GaN HEMT器件的陷阱与温度的关系进行了研究,通过对肖特基的变温测试发现,肖特特表面陷阱或者势垒层陷阱随温度的升高而增多,并且这些陷阱的增多会使得器件的电流崩塌也变得严重。另外,分析了温度对器件直流特性的影响,随温度升高,二维电子气浓度变化不大,迁移率减小,材料的方阻、欧姆接触、器件的输出和转移都有不同程度的退化。
As the third-generation semiconductor, GaN has lots of advantages as high breakdown voltage, mobility and saturation velocity and so on. Although the research of AlGaN/GaN HEMT has great development in the past years, the piezopolarization induced by the strain of the lattice mismatched heterostructure is still one of the key problems. At 17% In-content InAlN can be grown lattice matched to GaN, with no piezopolarization, and improve the reliability. But less study have been taken on InAlN/GaN heterostructure in past years, especially this is just the beginning in our state, so this paper will focus on this point.
Firstly, this paper presents the InAlN/GaN HEMT with well DC and small-signal characteristics made by ourselves. Then, improve the drain structure and investigate AlGaN/GaN HEMT with schottky drain. This device has significantly high breakdown voltage, and the other characters are as well as common device. Also, the breakdown voltage of this device increases with the schottky barrier height of the drain was studied firstly.
Secondly, the trap of the InAlN/GaN HEMT was investigated. Traps on the surface of InAlN were found by the current collapse effect and difference of material sheet resistance after passivation, also the approximate density was calculated by the schottky capacity changed with voltage. These traps were reduced with the method of low temperature anneal. Moerover, the infection of anneal to other characters of device has been analysed.
Finally, the heat-temperature characteristics of InAlN/GaN HEMT including surface trap and DC are measured. New traps of surface or barrier were induced by higher temperature, which lead current collapse more serious. Also, the DC peformance and mobility have degenerated for increased temperature, as sheet resistance, contect resiatance, output current and trans-conductance, while the 2DEG has little change.
首先,本文完成了InAlN/GaN HEMT器件的研制,并测得有较好的直流和小信号特性。还对漏端的工艺进行了改进,研制出肖特基作漏端的AlGaN/GaN HEMT器件。肖特基作漏的器件在具有与常规器件相同功能的基础上,还使得击穿电压明显增大。而且,首次发现漏端肖特基的势垒高度越大,器件的击穿电压越大。
其次,对自主研制的InAlN/GaN异质结的陷阱进行了研究,通过电流崩塌和钝化前后材料方块电阻的变化,发现InAlN材料表面可能存在陷阱,并且利用肖特基的电容-电压的测试方法,对InAlN/GaN的陷阱密度进行了估算,然后采用低温退火的方法使得陷阱有一定的减少。此外,还研究了不同温度下退火对器件其它特性的影响。
最后,对InAlN/GaN HEMT器件的陷阱与温度的关系进行了研究,通过对肖特基的变温测试发现,肖特特表面陷阱或者势垒层陷阱随温度的升高而增多,并且这些陷阱的增多会使得器件的电流崩塌也变得严重。另外,分析了温度对器件直流特性的影响,随温度升高,二维电子气浓度变化不大,迁移率减小,材料的方阻、欧姆接触、器件的输出和转移都有不同程度的退化。
As the third-generation semiconductor, GaN has lots of advantages as high breakdown voltage, mobility and saturation velocity and so on. Although the research of AlGaN/GaN HEMT has great development in the past years, the piezopolarization induced by the strain of the lattice mismatched heterostructure is still one of the key problems. At 17% In-content InAlN can be grown lattice matched to GaN, with no piezopolarization, and improve the reliability. But less study have been taken on InAlN/GaN heterostructure in past years, especially this is just the beginning in our state, so this paper will focus on this point.
Firstly, this paper presents the InAlN/GaN HEMT with well DC and small-signal characteristics made by ourselves. Then, improve the drain structure and investigate AlGaN/GaN HEMT with schottky drain. This device has significantly high breakdown voltage, and the other characters are as well as common device. Also, the breakdown voltage of this device increases with the schottky barrier height of the drain was studied firstly.
Secondly, the trap of the InAlN/GaN HEMT was investigated. Traps on the surface of InAlN were found by the current collapse effect and difference of material sheet resistance after passivation, also the approximate density was calculated by the schottky capacity changed with voltage. These traps were reduced with the method of low temperature anneal. Moerover, the infection of anneal to other characters of device has been analysed.
Finally, the heat-temperature characteristics of InAlN/GaN HEMT including surface trap and DC are measured. New traps of surface or barrier were induced by higher temperature, which lead current collapse more serious. Also, the DC peformance and mobility have degenerated for increased temperature, as sheet resistance, contect resiatance, output current and trans-conductance, while the 2DEG has little change.
引文
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[32] Bernardini F, Fiorentini V and Vanderbilit D, Spontaneous polarization and piezoelectric constants ofⅢ-Ⅴnitrides, Physical Review B (Condensed Matter), vol,56,1997,pp.10024
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[34] X.zhao,et al,Schottky Drain AlGaN/GaN HEMTs for mm-wave Applications, 65th Device Research Conference,2007,pp.107-108
[35] Bin Lu, et al,Schottky-Drain Technology for AlGaN/GaN High-Electron Mobil- ity Transistors, Electron Device Letters,vol.31(4),2010,pp.302-304
[36] R.L.Pritchard,J.B.Angell,et al,Transistor Internal Parameters for Smal-Signal Representation,Proc.IRE,vol49,1961,pp.725
[37] K.Kurokawa,Power Waves and the Scattering Matrix.IEEE Trans.Microwave Theory Tech,MTT,vol.13,1965,pp.194
[38] B.M.Greene,K.K.Chu,E.M.Chumbes,J.A.Smart,J.R.Shealy,and L.F. Eastman, IEEE Electron Devvices Letters,vol.21,2000,pp.268
[39] Adivarahan V.,Gaevski M., Sun W.H.,et al,Submicron gate Si3N4/AlGaN/GaN metal-insulator-semiconductor hterostructure field-effect transistors, IEEE Electron Device Letters, vol.24(9),2003,pp.541-543
[40] Asif Khan M.,Shur M.S.,Simin G.,Strain-engineered novelⅢ-Ⅴelectronic devices with high quality dielectric/semiconductor interfaces, Phys Stat Sol(A), vol.200(1),2003,pp.155-160
[41] Vetury Ramakrishna,Zhang Naiqain Q.,Keller Stacia,et al, The Impact of Surface States on the DC and RF Characteristics of AlGaN/GaN HFETs, IEEE Tran- sactions on Electron Devices,vol.48(3),2001,pp.560-566
[42] S. Arulkumarana,et al,Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN/GaN high-electron-mobility transistors on silicon, Appl.Phys.Lett., vol.90,2007,pp.173504
[43] W.Schokley,et al,Research and investigation of inverse epitaxial UHF power transistors,Report No. Al-TOR-64-207,Air Force Atomic Laboratory,Wright -Patterson Air Force Base,Ohio, 1964
[44]岳远征,高K栅介质AlGaN/GaN MOS-HEMT器件研究,西安电子科技大学博士论文,2009,pp.46
[45]施敏(S.M.),《半导体器件物理》,第三版,西安交通大学出版社,pp.170-173.
[46] E.H.Nicollian,et al,The Si-SiO2 Interface-Eletrical Properties as Determined by the MIS Conductance Technique,BellSyst.Tech.J.,vol.46,1967,pp.1055
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[54]王冲,张金凤,等,AlGaN/GaN HMET在N2中高温退火研究,西安电子科技大学学报,vol.33(6),2006,pp.862-865
[2] S. T. Shepjpard, K. Doverspike, and W. L. Pribble, et al, High power AlGaN/GaN HEMTs on silicon carbide, Device Research Conference, Charlottesville VA, 1998
[3] Wu Y. F., Keller B. P., Fini P., et al, Short-channel Al0.5GaN0.5N/GaN MODFETs with power density 3W/mm at 18GHz, IEEE Electron Lett, vol.18(10),1997, pp.1742
[4] M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. J.Schaff, and L. F. Eastman, CW operation of short channel GaN/AlGaN doped channel heterostructure field effect transistors at 10GHz and 15GHz,IEEE Electron Device Letters, vol.17(12),1996, pp.584-585
[5] G. J. Sullivan, M. Y. Chen, J. A. Higgins, J. W. Yang, Q. Chen, R. L. Pierson,and B. T. McDermott, High power 10GHz operation of AlGaN HFET’s on insulating SiC, IEEE Electron Device Letters, vol.19(6),1998, pp.198-200
[6] Duboz J.Y., GaN as Seen by the Industry, Physica Status Solidi (A), vol.176(1), 2000, pp.5-14
[7] S. Nakamura, III-V Nitride-Based Short-Wavelength LEDs et LDs Group III Nitride Semiconductor Compounds-Physics and Applications, Oxford Science Publication, 1998, pp.3916
[8] F.Schwierz,O.Ambacher.Recent advances in GaN HEMT development.IEEE Intemational Symposium,2003,pp.204-209
[9] Khan, M.A., et al., Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN- AlxGa1-xN heterojunctions. Appl. Phys. Lett, vol.60(24),1992, pp.3027
[10] Gaska R.,Shur M.S., Bykhovski A.D., et al, Electron mobility in modulation- doped AlGaN-GaN heterostructures, Appl. Phys. Lett,vol.74, 1999, pp.287.
[11]S.M.Sze, Semiconductor devices: physics and technoloty (2nd Edition), John Wiley & Sons, Inc, 2002
[12]Tkikkawa T.,Highly reliable 250 W GaN high electron mobility transistor power amplifier,J. Appl. Phys., vol.44(7),2005, pp.4896
[13] Maekawa A., Yamamoto T., Mitani E., et al, 500W push-pull AlGaN/GaN HEMT amplifier for L-band high power application, 2006 IEEE MTT-S International Microwave Symposium Digest, 2006,pp.722
[14]Eizo M., Makoto A., Arata M.,et al, An 800-W AlGaN/GaN HEMT for S-band High-Power Application, CS MANTECH Conference, 2007, pp.213-216
[15] Koudymov A., Wang C. X, Adivarahan V, et al, Power stability of AlGaN/GaN HFETs at 20W/mm in the pinched-off operation mode, IEEE Electron Devices Letters, vol. 28(1),2007, pp.5
[16] F. Medjdoub,et al,InAlN-A new barrier material for GaN-based HEMTs,IEEE International Workshop on Physics of Semiconductor Devices, IWPSD 2007, pp. 311– 316
[17] M.Gonschotek,J.F.Carlin,E.Feltin,et al,High elctron mobility lattice-matched AlInN/GaN field-effec transistor heterostructures.Appl.Phys.Lett., vol.89,2006,pp. 062106.
[18] M.Gonschotek,J.F.Carlin,E.Feltin,et al,Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures(0.03
[20] J. Kuzmík, et al, InAlN/(In)GaN high electron mobility transistors: Some aspects of the quantum well heterostructure proposal,Semicond. Sci.Technol, vol.17(6),2002,pp.540-544
[21] Ján Kuzmík,et al,Power Electronics on InAlN/(In)GaN: Prospect for a Record Performance, IEEE Electron Device Letters,vol.22(10),2001,pp.510-512
[22] M. Neuburger,et al,Unstraianed InAlN/GaN HEMT Structure, International Journal of High Speed Electronics and Systems,vol.14(3),2004,785-790
[23] O. Katz,et,al, InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics,IEEE Electronics Letters,vol.40(20),2004
[24] J. Kuzmík,et al, InAlN/GaN HEMTs:A First Insight Into Technological Optimization,IEEE Transactions on Electron Devices,vol.53(3),2006,pp.442-446
[25] N. Sarazin,et al, AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz, IEEE Electron Devices Letters, vol. 31(1),2010, pp.11-13
[26] A. Crespo,et,al, High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier, IEEE Electron Devices Letters, vol. 31(1),2010, pp.2-4
[27] Kelson D.Chabak,Manuel Trejio,et al,Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency, IEEE Electron Devices Letters, vol. 31(6),2010, pp.561-563
[28]刘恩科,朱秉升,罗晋生,《半导体器件学》,国防工业出版社,pp.181-183.
[29] Steven C.Binari,P.B.Klein and Thomas E.Kazior, Trapping effects in GaN and SiC microwave FETs, Proceedingd of the IEEE, vol.90(6),2002,pp.1048-1058
[30] Koley G,Tilak V,Eastman L F,et al,Slow transient observed in A1GaN/GaN HEFTs:Effects of SiNx passivation and UV illumination.IEEE Transaction on Electron Devices,vol.50,2003,pp.886
[31] Ambacher O, Smart J, Shealy J R,et al, Two-dimensonal electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures, J.Appl.Phys., vol.85,1999,pp.3222.
[32] Bernardini F, Fiorentini V and Vanderbilit D, Spontaneous polarization and piezoelectric constants ofⅢ-Ⅴnitrides, Physical Review B (Condensed Matter), vol,56,1997,pp.10024
[33] Z.Y.Fan, J.Li, J.Y.Lin, et al, Delta-doped AlGaN/GaN metal–oxide– semiconductr heterostructure field-effect transistors with high breakdown voltages. Appl. Phys. Lett.,vol 81(24),2002,pp.4649
[34] X.zhao,et al,Schottky Drain AlGaN/GaN HEMTs for mm-wave Applications, 65th Device Research Conference,2007,pp.107-108
[35] Bin Lu, et al,Schottky-Drain Technology for AlGaN/GaN High-Electron Mobil- ity Transistors, Electron Device Letters,vol.31(4),2010,pp.302-304
[36] R.L.Pritchard,J.B.Angell,et al,Transistor Internal Parameters for Smal-Signal Representation,Proc.IRE,vol49,1961,pp.725
[37] K.Kurokawa,Power Waves and the Scattering Matrix.IEEE Trans.Microwave Theory Tech,MTT,vol.13,1965,pp.194
[38] B.M.Greene,K.K.Chu,E.M.Chumbes,J.A.Smart,J.R.Shealy,and L.F. Eastman, IEEE Electron Devvices Letters,vol.21,2000,pp.268
[39] Adivarahan V.,Gaevski M., Sun W.H.,et al,Submicron gate Si3N4/AlGaN/GaN metal-insulator-semiconductor hterostructure field-effect transistors, IEEE Electron Device Letters, vol.24(9),2003,pp.541-543
[40] Asif Khan M.,Shur M.S.,Simin G.,Strain-engineered novelⅢ-Ⅴelectronic devices with high quality dielectric/semiconductor interfaces, Phys Stat Sol(A), vol.200(1),2003,pp.155-160
[41] Vetury Ramakrishna,Zhang Naiqain Q.,Keller Stacia,et al, The Impact of Surface States on the DC and RF Characteristics of AlGaN/GaN HFETs, IEEE Tran- sactions on Electron Devices,vol.48(3),2001,pp.560-566
[42] S. Arulkumarana,et al,Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN/GaN high-electron-mobility transistors on silicon, Appl.Phys.Lett., vol.90,2007,pp.173504
[43] W.Schokley,et al,Research and investigation of inverse epitaxial UHF power transistors,Report No. Al-TOR-64-207,Air Force Atomic Laboratory,Wright -Patterson Air Force Base,Ohio, 1964
[44]岳远征,高K栅介质AlGaN/GaN MOS-HEMT器件研究,西安电子科技大学博士论文,2009,pp.46
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