SRAM材料及其结构的隐身特性计算与优化设计
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摘要
结构型吸波复合材料(SRAM)是现代飞行器隐身设计技术的重要应用手段,具有承载和减小雷达散射截面积的双重功能。本文应用电磁场有限元数值计算及优化设计方法,对结构型吸波材料的隐身特性及其结构优化设计方法进行了计算分析与研究探讨,并给出了典型实例分析。
     本文在分析研究结构型吸波材料的种类和结构型式设计的基础上,探讨了其隐身设计的可能途径以及可行的数值计算与优化设计方法;利用二阶线性偏微分方程边值问题的有限元数值计算方法联合吸收边界条件对结构型吸波复合材料二维目标雷达散射截面进行了理论算法组织和计算程序设计,并用典型算例与矩量法解进行了结果比较,验证了本文算法程序设计的正确性。在数值计算及程序设计工作基础上,探讨了结构吸波材料的参数优化设计概念,并结合序列二次规划法(SQP)进行了优化算法与程序设计研究,计算了给定SRAM形式和特定的频率范围内的设计优化实例,获得了可资工程应用借鉴的结果:关于吸波复合材料结构型式的设计与应用,本文分别对二维层合板结构型式和波纹板结构型式进行了初步分析设计探讨,获得了有一定工程参考价值的结论。
The structural radar absorption materials (SRAM) of composites, with the dual functions of high mechanic properties and reducing radar cross-section (RCS), are the key means of stealth technique implementation for modern aircrafts. By use of electromagnetic finite element method and optimization design technique, this thesis conducts the research work of SRAM stealth performances computation and theoretical optimization analysis of electromagnetic parameters, and also some typical cases are studied.
    On the base of analyzing SRAM classifications and structural models, possible stealth design approaches, feasible numerical calculations and detailed optimization design techniques are explored in the thesis, meanwhile, the algorithmic procedures and programs of 2-D target RCS are designed and worked out by virtue of the finite element method (FEM) for the boundary problem of second-order linear partial differential equations combined with absorbing boundary conditions (ABC). The numerical results worked in the thesis are so agreed with the solutions of moment method (MM), which indirectly shows the program correctness and applicability. Underlying on these fundamental researches, the optimization design concepts of SRAM are investigated and the parametric optimization algorithmic codes under sequential quadratic programming (SQP) are designed. Some optimal results valuable for engineering design are achieved to the specific SRAM at designated electromagnetic frequencies. With regards of SRAM structural models design, the thesis preliminarily analyzes 2-D layered and rippled SRAM structures possessed of certain referential value for engineering.
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