超宽带CMOS低噪声放大器的研究
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摘要
高速超宽带通讯和低成本是当今无线通讯技术重要的发展方向,而低噪声放大器(LNA)作为无线接收机的第一级,其良好的性能是实现正常通讯的重要保障,所以研究超宽带CMOS低噪声放大器意义重大。
本论文正是基于先进的CMOS工艺,对宽带、超宽带无线应用中的关键模块--超宽带低噪声放大器进行研究、设计,仿真得出高性能的UWB LNA结果。
本论文在参考大量相关文献的基础上,基于TSMC 0.18μm CMOS工艺选取合适的超宽带低噪声放大器的拓扑结构,进行深入分析和研究,通过ADS软件对TSMC的NMOS管S参数、噪声指数和功率等信息进行仿真,获得特定条件下的MOS管数值;采用新颖的电路结构(共源共栅源极去耦结构和共源结构)设计了两款符合超宽带标准的CMOS低噪声放大器,结果达到设计指标。通过Cadence的Virtuso软件,给出这两款超宽带CMOS低噪声放大器的版图设计。在超宽频带内实现了小于4dB的噪声系数和12dB的平坦增益,输入输出匹配优于-10dB,而功耗仅为30mw。
High speed ultra-wideband communication and low cost are significant directions of the development of wireless communication technologies nowadays.On the other hand,as the first stage of wireless receiver,low noise amplifier plays an important role in the communication system.So the research of ultra-wideband CMOS LNA is imperative under this situation。
The key component of wide-band wireless applications-wideband low noise amplifier(LNA)based on advanced CMOS process was exactly researched in this thesis.The aim of this thesis is to design and simulate high performance wide-band LNAs.
Based on numerous references and TSMC 0.18μm CMOS process,this thesis chose proper topology to furture analyse and study two novel UWB LNAs.Firstly, simulat the TSMC's NMOS with ADS and choose the right parameter from the results to start the work.Secondly,designed two kinds of UWB CMOS LNA with the topology of cascode with source inductor degeneration and common source under TSMC 0.18μm CMOS process.The LNA achieved less than 4dB noise figure and 12dB gain in the pass band with less than-10dB input and output match.The power dissipation of the LNA were merely 30mw.At last,the layout was designed with Cadence Virtuso.
本论文正是基于先进的CMOS工艺,对宽带、超宽带无线应用中的关键模块--超宽带低噪声放大器进行研究、设计,仿真得出高性能的UWB LNA结果。
本论文在参考大量相关文献的基础上,基于TSMC 0.18μm CMOS工艺选取合适的超宽带低噪声放大器的拓扑结构,进行深入分析和研究,通过ADS软件对TSMC的NMOS管S参数、噪声指数和功率等信息进行仿真,获得特定条件下的MOS管数值;采用新颖的电路结构(共源共栅源极去耦结构和共源结构)设计了两款符合超宽带标准的CMOS低噪声放大器,结果达到设计指标。通过Cadence的Virtuso软件,给出这两款超宽带CMOS低噪声放大器的版图设计。在超宽频带内实现了小于4dB的噪声系数和12dB的平坦增益,输入输出匹配优于-10dB,而功耗仅为30mw。
High speed ultra-wideband communication and low cost are significant directions of the development of wireless communication technologies nowadays.On the other hand,as the first stage of wireless receiver,low noise amplifier plays an important role in the communication system.So the research of ultra-wideband CMOS LNA is imperative under this situation。
The key component of wide-band wireless applications-wideband low noise amplifier(LNA)based on advanced CMOS process was exactly researched in this thesis.The aim of this thesis is to design and simulate high performance wide-band LNAs.
Based on numerous references and TSMC 0.18μm CMOS process,this thesis chose proper topology to furture analyse and study two novel UWB LNAs.Firstly, simulat the TSMC's NMOS with ADS and choose the right parameter from the results to start the work.Secondly,designed two kinds of UWB CMOS LNA with the topology of cascode with source inductor degeneration and common source under TSMC 0.18μm CMOS process.The LNA achieved less than 4dB noise figure and 12dB gain in the pass band with less than-10dB input and output match.The power dissipation of the LNA were merely 30mw.At last,the layout was designed with Cadence Virtuso.
引文
[1] Roberto Aiello G,Rogerson Gerald D. Ultra wideband wireless systems. IEEE microwave magazine, June, 2002 ,4 (2) :36247.
[2] Ke-Hou Chen, Jian-Hao Lu, Bo-Jiun Chen, An Ultra-Wide-Band 0.4-10-GHz LNA in 0.18-_m CMOS, and Shen-Iuan Liu, IEEE Transaciona on circuits and systems-II: Express Briefs, Vol. 54, No. 3, March 2007
[3] "First report and order , revision of part 15 of the commissionps rules regarding ultra2wideband transmission systems ," FCC , Washington, DC , ET Docket, 2002 : 982153
[4] Amin K, Ezzeddine, Ho C. Huang, et al. Ultra-Broadband GaAs HIFET MMIC PA. IEEE MTTS International, 2006:1320-1323
[5] G.Stegmayer, M.Pirola, Vcamarchia, et al. RF Dynamic Behavioral Model Suitable for GaN-HEMT Devices. Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2006:9-12
[6] C. C. Meng, J.Y Su, B. C. Tsou, et al. RF Characteristics of BJT Devices with Selectively or Fully Ion-Implanted Collector. GARS, 2006: 3-7
[7] Noise in Site HBT RF Technology: Physics, Modeling,, and Circuit Implications. Proc IEEE, 2005, 93(9): I 583-1597
[8] Guofu Niu. Marco Racanelli, Paul Kempf. SiGe BiCMOS Technology for RF Circuit Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005,52(7):1259-1270
[9] P. Descamps, C. Barbier-Petot, C. Biard, et al. Performance comparison of substrate coupling effect between silicon and SOI substrates in RF-CMOS technology. ELECTRONICS LETTERS, 2006,42(20): 1151 - 1152
[10] Wenjun Sheng, Ahmed Emira, Edgar Sanchez-Sinencio. CMOS RF Receiver System Design: A Systematic Approach. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 2006,53(5): 1023 - 1034
[11] Frank Zhang, Peter Kinget. Low Power Programmable-Gain CMOS Distributed LNA for Ultra-Wideband Applications. VLSI Dig. Tech. Papers, 2005:78-81
[12] Srikanth Arekapudi, Echere Iroaga, Boris Murmann. A LOW-POWER DISTRIBUTED WIDE-BAND LNA IN 0.18μm CMOS. ISCAS(5), 2005:5055-5058
[13] R. C. Liu, K. L. Deng, H. Wang. A 0.6-22GHz Broadband CMOS Distributed Amplifier. IEEE RFIC Symposium, 2003:103-106
[14] Federico Bruceoleri, Eric A. M. Klumperink. Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling. IEEE Journal of Solid-state Circuits, 2004,39(2):275-232
[15]Shih-Chih Chen,Ruey-Lue Wang Ming-Lung Kung,et al.An Integrated CMOS Low Noise Amplifier for Ultra Wide Band Applications.International Conference on Wireless Networks Communications and Mobile.Computing,2005:1354-1357
[16]Jouni Kaukovuori,Jussi Ryynanen,Kari A.I.Halonen.CMOS Low-Noise Amplifier Analysis and Optimization for Wideband Applications.Research in Microelectronics and Electronics,2006:445-448
[17]Yang-Chaun Chen,Chien-Nan Kuo.A 6 - 10-GHz Ultra-WideBand Tunable LNA.IEEE ISCAS 2005:5099-5102
[18]Reza Molavi,Shahriar Mirabbasi,Majid Hashemi.A Wideband CMOS LIVA Design Approach.IEEE ISCAS,2005:5107- 5110
[19]Mou Shouxian,Ma Jian-Guo,Yeo Kiat Seng,et al.A Modified Architecture Used for Input Matching in CMOS Low-Noise Amplifiers.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS,2005,52(11):784-788
[20]R.-C.Liu,C.-S.Lin,K.-L.Deng,et al.A 0.5-14GHz 10.6-dB CMOS cascade distributed amplifier.Proc.IEEE VLSI Circuits Symp.,2003:139-140
[21]Yao-Chian Lin,Wan-Rone Liou,Jyh-Jier Ho.An Low Power Ultra-Wideband CMOS LNA for 3.1-8.2GHz Wireless Receivers.Communications,Circuits and Systems Proceedings,2006:1288-1291
[22]彭龙新,林金庭,魏同立.宽带单片低噪声放大器.电子学报,2004,32(11):1933-1937
[23]张华斌,张庆中,陈庆华.2.4GHz微波宽带低噪声放大器的设计.电子器件,2006,29(3):714-717
[24]Ma Desheng,ShiYin,Dai Fa Foster.A Wide Band Low Noise Amplifier for Terrestrial and Cable Receptions.Chinese Journal of Semiconductors,2006,27(6):971-976
[25]亢树军,马云霞,刘伦才一种高线性SiGeHBT宽带低噪声放大器微电子学,2006,36(5):565-568
[26]廖友春,唐长文,闵昊。一种用于电视调谐器的宽带CMOS低噪声放大器设计.半导体学报,2006,27(11):2029-2034
[27]罗志勇,李巍,任俊彦。超宽带CMOS低噪声放大器的设计.微电子学,2006,36(5):688-692
[28]桑泽华,李永明。一种应用于超宽带系统的宽带LNA的设计.微电子学,2006,36(1):114-117
[29]Jihak Jung,Taeyeoul Yun,1Jaehoon Choi,and Hoontae Kim,Wideband And Low Noise CMOS Amplifier For UWB Receivers,MICROWAVE AND OPTICAL TECHNOLOGY LETTERS/Vol.49,No.4,April 2007
[30]Yang Lu,Kiat Seng Yeo,Jian Guo Ma,Manh Anh Do,and Zhenghao Lu,1.8-V 3.1-10.6-GHz CMOS LOW-NOISE AMPLIFIER FOR ULTRA-WIDEBAND APPLICATIONS,MICROWAVE AND OPTICAL TECHNOLOGY LETTERS/Vol.44,No.3,February 5,2007
[31]华明清,王志功,李智群,0.18-μm CMOS 3.1-10.6GHz超宽带低噪声放大器设计,电路与系统学报,2007年2月,第12卷第1期
[32]宋睿丰,廖怀林,黄如,王阳元,311～1016 GHz超宽带低噪声放大器设计,北京大学学报(自然科学版),第43卷,第1期,2007年1月
[33]T.J.Yeh,Y.J.Wang,C.H.Huang.“tsmc 0.18μm salicide 1.8V/3.3V RF SPICE Models”
[34]台湾:TSMC Taiwan Semiconductor Manufacturing Co.,LTD,2004
[35]Chung-Ping Chang,Cheng-Chi Yen,and Huey-Ru Chuang,A 2.4-6GHz CMOS Broadband High-Gain Differential LNA for UWB and WLAN Receiver,2007,IEEE
[36]ThomasH.Lee.CMOS射频集成电路设计(余志平,周润德).北京:电子工业出版社,2004,23-57,180-182,203-218
[37]Lee Eng Han,Valerio B.Perez,Mark Larnbert Cayanes et al.CMOS Transistor Layout KungFu.httpa/www.eda-utilities.com/,2006-2-14
[38]BehzadRazavi,射频微电子(余志平,周润德).北京:清华大学出版社,2006,18-35,130-134
[39]许永生,CMOS射频器件建模及低噪声放大器的设计研究,2005,33-35,57-59,118-119
[2] Ke-Hou Chen, Jian-Hao Lu, Bo-Jiun Chen, An Ultra-Wide-Band 0.4-10-GHz LNA in 0.18-_m CMOS, and Shen-Iuan Liu, IEEE Transaciona on circuits and systems-II: Express Briefs, Vol. 54, No. 3, March 2007
[3] "First report and order , revision of part 15 of the commissionps rules regarding ultra2wideband transmission systems ," FCC , Washington, DC , ET Docket, 2002 : 982153
[4] Amin K, Ezzeddine, Ho C. Huang, et al. Ultra-Broadband GaAs HIFET MMIC PA. IEEE MTTS International, 2006:1320-1323
[5] G.Stegmayer, M.Pirola, Vcamarchia, et al. RF Dynamic Behavioral Model Suitable for GaN-HEMT Devices. Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2006:9-12
[6] C. C. Meng, J.Y Su, B. C. Tsou, et al. RF Characteristics of BJT Devices with Selectively or Fully Ion-Implanted Collector. GARS, 2006: 3-7
[7] Noise in Site HBT RF Technology: Physics, Modeling,, and Circuit Implications. Proc IEEE, 2005, 93(9): I 583-1597
[8] Guofu Niu. Marco Racanelli, Paul Kempf. SiGe BiCMOS Technology for RF Circuit Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005,52(7):1259-1270
[9] P. Descamps, C. Barbier-Petot, C. Biard, et al. Performance comparison of substrate coupling effect between silicon and SOI substrates in RF-CMOS technology. ELECTRONICS LETTERS, 2006,42(20): 1151 - 1152
[10] Wenjun Sheng, Ahmed Emira, Edgar Sanchez-Sinencio. CMOS RF Receiver System Design: A Systematic Approach. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 2006,53(5): 1023 - 1034
[11] Frank Zhang, Peter Kinget. Low Power Programmable-Gain CMOS Distributed LNA for Ultra-Wideband Applications. VLSI Dig. Tech. Papers, 2005:78-81
[12] Srikanth Arekapudi, Echere Iroaga, Boris Murmann. A LOW-POWER DISTRIBUTED WIDE-BAND LNA IN 0.18μm CMOS. ISCAS(5), 2005:5055-5058
[13] R. C. Liu, K. L. Deng, H. Wang. A 0.6-22GHz Broadband CMOS Distributed Amplifier. IEEE RFIC Symposium, 2003:103-106
[14] Federico Bruceoleri, Eric A. M. Klumperink. Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling. IEEE Journal of Solid-state Circuits, 2004,39(2):275-232
[15]Shih-Chih Chen,Ruey-Lue Wang Ming-Lung Kung,et al.An Integrated CMOS Low Noise Amplifier for Ultra Wide Band Applications.International Conference on Wireless Networks Communications and Mobile.Computing,2005:1354-1357
[16]Jouni Kaukovuori,Jussi Ryynanen,Kari A.I.Halonen.CMOS Low-Noise Amplifier Analysis and Optimization for Wideband Applications.Research in Microelectronics and Electronics,2006:445-448
[17]Yang-Chaun Chen,Chien-Nan Kuo.A 6 - 10-GHz Ultra-WideBand Tunable LNA.IEEE ISCAS 2005:5099-5102
[18]Reza Molavi,Shahriar Mirabbasi,Majid Hashemi.A Wideband CMOS LIVA Design Approach.IEEE ISCAS,2005:5107- 5110
[19]Mou Shouxian,Ma Jian-Guo,Yeo Kiat Seng,et al.A Modified Architecture Used for Input Matching in CMOS Low-Noise Amplifiers.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS,2005,52(11):784-788
[20]R.-C.Liu,C.-S.Lin,K.-L.Deng,et al.A 0.5-14GHz 10.6-dB CMOS cascade distributed amplifier.Proc.IEEE VLSI Circuits Symp.,2003:139-140
[21]Yao-Chian Lin,Wan-Rone Liou,Jyh-Jier Ho.An Low Power Ultra-Wideband CMOS LNA for 3.1-8.2GHz Wireless Receivers.Communications,Circuits and Systems Proceedings,2006:1288-1291
[22]彭龙新,林金庭,魏同立.宽带单片低噪声放大器.电子学报,2004,32(11):1933-1937
[23]张华斌,张庆中,陈庆华.2.4GHz微波宽带低噪声放大器的设计.电子器件,2006,29(3):714-717
[24]Ma Desheng,ShiYin,Dai Fa Foster.A Wide Band Low Noise Amplifier for Terrestrial and Cable Receptions.Chinese Journal of Semiconductors,2006,27(6):971-976
[25]亢树军,马云霞,刘伦才一种高线性SiGeHBT宽带低噪声放大器微电子学,2006,36(5):565-568
[26]廖友春,唐长文,闵昊。一种用于电视调谐器的宽带CMOS低噪声放大器设计.半导体学报,2006,27(11):2029-2034
[27]罗志勇,李巍,任俊彦。超宽带CMOS低噪声放大器的设计.微电子学,2006,36(5):688-692
[28]桑泽华,李永明。一种应用于超宽带系统的宽带LNA的设计.微电子学,2006,36(1):114-117
[29]Jihak Jung,Taeyeoul Yun,1Jaehoon Choi,and Hoontae Kim,Wideband And Low Noise CMOS Amplifier For UWB Receivers,MICROWAVE AND OPTICAL TECHNOLOGY LETTERS/Vol.49,No.4,April 2007
[30]Yang Lu,Kiat Seng Yeo,Jian Guo Ma,Manh Anh Do,and Zhenghao Lu,1.8-V 3.1-10.6-GHz CMOS LOW-NOISE AMPLIFIER FOR ULTRA-WIDEBAND APPLICATIONS,MICROWAVE AND OPTICAL TECHNOLOGY LETTERS/Vol.44,No.3,February 5,2007
[31]华明清,王志功,李智群,0.18-μm CMOS 3.1-10.6GHz超宽带低噪声放大器设计,电路与系统学报,2007年2月,第12卷第1期
[32]宋睿丰,廖怀林,黄如,王阳元,311～1016 GHz超宽带低噪声放大器设计,北京大学学报(自然科学版),第43卷,第1期,2007年1月
[33]T.J.Yeh,Y.J.Wang,C.H.Huang.“tsmc 0.18μm salicide 1.8V/3.3V RF SPICE Models”
[34]台湾:TSMC Taiwan Semiconductor Manufacturing Co.,LTD,2004
[35]Chung-Ping Chang,Cheng-Chi Yen,and Huey-Ru Chuang,A 2.4-6GHz CMOS Broadband High-Gain Differential LNA for UWB and WLAN Receiver,2007,IEEE
[36]ThomasH.Lee.CMOS射频集成电路设计(余志平,周润德).北京:电子工业出版社,2004,23-57,180-182,203-218
[37]Lee Eng Han,Valerio B.Perez,Mark Larnbert Cayanes et al.CMOS Transistor Layout KungFu.httpa/www.eda-utilities.com/,2006-2-14
[38]BehzadRazavi,射频微电子(余志平,周润德).北京:清华大学出版社,2006,18-35,130-134
[39]许永生,CMOS射频器件建模及低噪声放大器的设计研究,2005,33-35,57-59,118-119