大屏幕用纳米碳基膜场发射显示模块的制作
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摘要
碳纳米管(CNT)场发射显示器(FED)具有高亮度、低功耗、广视角、响应速度快等优势,被认为是新型平板显示器中最理想的器件,但至今还未能产业化。要获得CNT-FED应用的关键是开发低成本、高性能和长寿命的器件。丝网印刷法制备FED是一种低成本、工艺简单、易于工业化放大的理想技术。但在器件实用化之前,场发射阴极材料、阳极荧光粉膜的附着性、器件工艺等都需要优化。
本论文首先针对CNT阴极发射电流密度较小的问题,通过尝试在CNT膜层涂敷热阴极材料BaO来进一步提高大电流密度下阴极的发射性能。利用CNT大电流发射时产生的局部高温使得BaO被C还原成金属Ba,适量的Ba和BaO在局部高温时产生热电子发射,从而提高总体的发射电流,为阴极大电流下进一步提高电流密度提供了一个可能的技术路线。
针对丝网印刷工艺制备的FED阳极荧光粉导电性能和附着力差等影响器件性能的问题,通过在调配荧光粉浆料时直接加入适量的CNT和硝酸镁,提高荧光粉膜层的导电性和附着力,从而提高场发射阳极的发光稳定性。
经工艺优化后,制作了基于全印刷技术的4英寸二极管型CNT-FED显示模块,通过模块拼接的方式进行显示屏尺寸的放大或缩小。采用所研制的模块拼接出了40英寸的FED大屏幕,在300V左右的驱动电压下,到了较好的显示效果。
Carbon nanotubes based field emission display (CNT-FED) have attracted much attention in flat panel display field, due to their outstanding properties of high brightness, low power consumption, wide viewing angles, and fast response time, and so on. The realization of CNT-FED industrialization requires a low-cost process to manufacate high-performance and long-life devices. The screen printing technology, which characteristics of low cost, simple process and easily scale up, is considered as the optimal candidate to fabricate CNT-FEDs, and adopted in this paper. Before the industrial application, it is essential to optimize the field emission performance of cathode materials, the luminescent property of phosphor anode, and other processes.
The paper had made an effort to further enlarge the high-density current of the CNT-FED by coating a layer of oxidation barium (BaO), one kind of hot cathode materials, over the surface of CNT layer. Some BaO were reduced to Ba by carbon due to the local high temperature resulting from high-density current emitted by CNT cathode. Moreover, the compound of Ba and BaO with proper proportion emitted electrons under high temperature, which further enhanced the emission performance.
CNTs and magnesium nitrate (Mg(NO_3)_2) were added respectively into phosphor paste in the screen printing procedure to improve the conductivity and adhesion of phosphor layers. As a result, the optical stability of the anode were improved.
After process optimization, diode-type CNT-FED module unit with 4 inch size has been fabricated by full screen printing technology. The modules could be jointed to displays of different size, and the 40 inch display had been jointed in this paper showing fine display property drove by 300 V.
本论文首先针对CNT阴极发射电流密度较小的问题,通过尝试在CNT膜层涂敷热阴极材料BaO来进一步提高大电流密度下阴极的发射性能。利用CNT大电流发射时产生的局部高温使得BaO被C还原成金属Ba,适量的Ba和BaO在局部高温时产生热电子发射,从而提高总体的发射电流,为阴极大电流下进一步提高电流密度提供了一个可能的技术路线。
针对丝网印刷工艺制备的FED阳极荧光粉导电性能和附着力差等影响器件性能的问题,通过在调配荧光粉浆料时直接加入适量的CNT和硝酸镁,提高荧光粉膜层的导电性和附着力,从而提高场发射阳极的发光稳定性。
经工艺优化后,制作了基于全印刷技术的4英寸二极管型CNT-FED显示模块,通过模块拼接的方式进行显示屏尺寸的放大或缩小。采用所研制的模块拼接出了40英寸的FED大屏幕,在300V左右的驱动电压下,到了较好的显示效果。
Carbon nanotubes based field emission display (CNT-FED) have attracted much attention in flat panel display field, due to their outstanding properties of high brightness, low power consumption, wide viewing angles, and fast response time, and so on. The realization of CNT-FED industrialization requires a low-cost process to manufacate high-performance and long-life devices. The screen printing technology, which characteristics of low cost, simple process and easily scale up, is considered as the optimal candidate to fabricate CNT-FEDs, and adopted in this paper. Before the industrial application, it is essential to optimize the field emission performance of cathode materials, the luminescent property of phosphor anode, and other processes.
The paper had made an effort to further enlarge the high-density current of the CNT-FED by coating a layer of oxidation barium (BaO), one kind of hot cathode materials, over the surface of CNT layer. Some BaO were reduced to Ba by carbon due to the local high temperature resulting from high-density current emitted by CNT cathode. Moreover, the compound of Ba and BaO with proper proportion emitted electrons under high temperature, which further enhanced the emission performance.
CNTs and magnesium nitrate (Mg(NO_3)_2) were added respectively into phosphor paste in the screen printing procedure to improve the conductivity and adhesion of phosphor layers. As a result, the optical stability of the anode were improved.
After process optimization, diode-type CNT-FED module unit with 4 inch size has been fabricated by full screen printing technology. The modules could be jointed to displays of different size, and the 40 inch display had been jointed in this paper showing fine display property drove by 300 V.
引文
[1]应根裕,胡文波,邱勇,等.平板显示技术[M].北京:人民邮电出版社,2002.1-5.
[2]G.O.Mueller.Flat-panel displays for high-definition television[J].Displays,Volume 12,Issue 1,January 1991,Pages 31-40
[3]易晋.CRT、PDP、LCD显示器——终端显示的“三国鼎立”[J].真空电子技术,2001,(06):19-22.
[4]吴祖垲,李勇军,段诚.CRT显示技术的最新进展[J].真空电子技术,2002,(05):4-10.
[5]G.G.P.van Gorkom,T.S.Baller,P.A.Dessens,et al.Flat thin CRT based on controlled electron transport through insulating structures[J].Applied Surface Science,Volume 111,3 February 1997,Pages 276-284
[6]童林夙.平板CRT概况[J].光电子技术,1995,(01):10-18
[7]周艳琼,白木.液晶显示技术综述.影像技术[J],2002,(04):10-15.
[8]Michael E.Becker.Display-metrology for liquid-crystal-television-screens[J].Displays,Volume 26,Issues 4-5,October 2005,Pages 197-207
[9]谢智波.平板显示技术的新进展[J].电视技术,2007,(05):34-36
[10]Seungho Choi,Soo-ghee Oh,Soonil Lee.Application of optical method for quantitative investigation of MgO erosion in a.c.plasma display panels[J].Thin Solid Films,Volume 384,Issue 1,1 March 2001,Pages 115-119
[11]李震梅,董传岱,房华玲.PDP显示技术及其应用[J].山东工程学院学报,2002,(04):10-13.
[12]阙红梅.大屏幕电视机显示方式的发展[J].电子工程师,2000,(06):21-24
[13]扬帆.大屏幕图像显示技术与显示屏的种类及特点[J].家庭电子,2005,(14):8-9.
[14]曹有成.大屏幕投影系统关键技术研究[J].通信与广播电视,2008,(04):29-33.
[15]Hak Gu Lee,Dai Gil Lee.Design of a large LCD panel handling air conveyor with minimum air consumption[J].Mechanism and Machine Theory,Volume 41,Issue 7,July 2006,Pages 790-806
[16]罗志强,陈志雄,郑镇钦.液晶拼接幕墙技术应用[J].中国公共安全(市场版),2007,(08):59-61.
[17]R.J.Visser.Application of polymer light-emitting materials in light-emitting diodes,backlights and displays[J].Philips Journal of Research,Volume 51,Issue 4,1998,Pages 467-477
[18]W.Kurdthongmee.Design and implementation of an FPGA-based multiple-colour LED display board[J].Microprocessors and Microsystems,Volume 29,Issue 7,1 September 2005,Pages 327-336
[19]Z.H.Huang,P.H.Cutler,N.M.Miskovsky,et aI.,Theoretical study of field emission from diamond,Appl.Phys.Lett.,65(1994),2562
[20]D.S.Mao,J.Zhao,W.Li,et al.Electron field emission from nitrogen-containing diamond-like carbon films deposited by filtered are deposition[J].Materials Letters,Volume 41,Issue 3,November 1999,Pages 117-121
[21]J.D.Carey,S.R.P.Silva.Field emission from amorphous semiconductors[J].Solid-State Electronics,Volume 45,Issue 6,June 2001,Pages 1017-1024
[22]朱长纯,史永胜.场致发射显示器的现状与发展[J].真空电子技术,2002,NO 5:
[23]Jong Min Kim,Won Bong Choi,Nae Sung Lee,et al.Field emission from carbon nanotubes for displays[J].Diamond and Related Materials,Volume 9,Issues 3-6,April-May 2000,Pages 1184-1189
[24]Yoshikazu Nakayama,Seiji Akita.Field-emission device with carbon nanotubes for a flat panel display[J].Synthetic Metals,Volume 117,Issues 1-3,15 February 2001,Pages 207-210
[25]J.E.Jung,Y.W.Jin,J.H.Choi,et al.Fabrication of triode-type field emission displays with high-density carbon-nanotube emitter arrays[J].Physica B:Condensed Matter,Volume 323,Issues 1-4,October 2002,Pages 71-77
[26]J.H.Park,J.S.Moon,J.H.Han,et al,Effects of binders and organic vehicles on the emission properties of carbon nanotube paste[J],Diamond & Related Materials 14(2005) 1463-1468
[27]承欢,江剑平.阴极电子学[M].西北电信工程学院出版社,1986.
[28]R.H.Fowler and L.w.Nordheim,Electron emission in intense electric fields,Proc.Roy.Soc.(London)A,119(1928),173
[29]Kleps,D.Nicolaescu,C.Lungu,et al.Porous silicon field emitters for display applications[J].Applied Surface Science,Volume 111,3 February 1997,Pages 228-232
[30]N.S.Xu,S.Ejaz Huq.Novel cold cathode materials and applications[J].Materials Science and Engineering:R:Reports,Volume 48,Issues 2-5,31January 2005,Pages 47-189
[31]W.I.Milne,A.Ilie,J.B.Cui,et al.Field emission from nano-cluster carbon films[J].Diamond and Related Materials,Volume 10,Issue 2,February 2001,Pages 260-264.
[32]成会明等著,纳米碳管制备、结构、物性及应用[M],化学工业出版社,2002.8:322-323
[33]Yong Sheng Shi,Chang-Chun Zhu,Wang Qikun,et al.Large area screen-printing cathode of CNT for FED Diamond and Related Materials,Volume 12,Issue 9,September 2003,Pages 1449-1452
[34]Li Yukui,Zhu Changchun,Liu Xinghui.Field emission display with carbon nanotubes cathode:prepared by a screen-printing process[J].Diamond and Related Materials,Volume 11,Issue 11,November 2002,Pages 1845-1847
[35]Qilong Wang,Wei Lei,Xiaobing Zhang,et al.A novel gate structure in large diagonal size printable CNT-FED[J].Applied Surface Science,Volume 239,Issues 3-4,31 January 2005,Pages 458-463
[36]郑德海,郑军明.丝网印刷工艺(第二版)[M].印刷工业出版社,1994:1-9
[37]Shashurin,M.Keidar.Factors affecting the size and deposition rate of the cathode deposit in an anodic are used to produce carbon nanotubes[J].Carbon,Volume 46,Issue 13,November 2008,Pages 1826-1828
[38]Mineo Hiramatsu,Takahiro Deguchi,Hidetoshi Nagao,et al.Area-selective growth of aligned single-walled carbon nanotube films using microwave plasma-enhanced CVD[J].Diamond and Related Materials,Volume 16,Issues 4-7,April-July 2007,Pages 1126-1130
[39]Zhong Jin,Xuemei Li,Weiwei Zhou,et al.Direct growth of carbon nanotube junctions by a two-step chemical vapor deposition[J].Chemical Physics Letters,Volume 432,Issues 1-3,4 December 2006,Pages 177-183
[40]Fan-Guang Zeng,Chang-Chun Zhu,Weihua Liu,et al.The fabrication and operation of fully printed Carbon nanotube field emission displays[J].Microelectronics Journal 37(2006) 495-499
[41]王莉莉,孙卓,陈婷,等.电泳法制备碳纳米管场发射阴极的研究[J].真空科学与技术学报,2006,26(1):4-7
[42]黄岱,罗淑云.单色FED荧光屏的研制与分析[J].清华大学学报(自然科学版),1999.39(1):26-29
[43]Zhejuan Zhang,Daniel H.C.Chua,Yang Gao,et al.Field-emission properties of carbon nanotubes grown using Cu-Cr catalysts[J].Journal of Vacuum Science and Technology B,Volume 27,Issue 1,pp.41-46(January 2009)
[44]L L Wang,T Chen,T Feng,et al.Effect of sputtered Cu films diffusion barrier on the growth and field emission properties of carbon nanotubes by chemical vapor deposition[J].Applied Physics A 2008,90:701-704
[45]T.Chen,L.L.Wang,Y.W.Chen,et al.Field emission properties of carbon nanotubes film grown on NiCr alloy films[J].Applied Surface Science 2006,253,7046.
[46]P.S.Guo,Z.Sun,Y.W.Chen,et al.A Novel approach to mass synthesis of raw CNTs for printed field emission cathodes by chemical vapor deposition[J].Materials Letters,2006,60:966-969
[47]L.L.Wang,Z.Sun.Growth temperature effect on field emission properties of printable carbon nanotubes cathode[J].Solid-State Electronics 2006,5(50):800-804
[48]Tao Feng,Jinhua Zhang,Qiong Li,et al.Effects of plasma treatment on microstructure and electron field emission properties of screen-printed carbon nanotube films[J].Physica E,2007,36:28-33
[49]余泉茂,刘中仕,荆西平.场发射显示器(FED)荧光粉的研究进展[J].液晶与显示,2005,20(1):7-17
[50]Fitz-Gerald J M,Trottier T A,Singh R K,et al.Significant reduction of cat hodoluminescent degradation in sulfide-based phosphors[J].Appl.Phys.Lett.,1998,72(15):4832488.
[51]Kominami H,Nakamura T,Sowa T K.et al.Low voltage cathodoluminescent properties of phosphors coated with In2O3 by sol-gel method[J].Appl.Surf.Sci.,1997,113-114:521-522.
[52]张哲娟.基于纳米材料的高效节能平面冷光源研究[D].华东师范大学,2006:30-36
[53]B.S.Jeon,J.S.Yoo,and J.D.Lee,J.Electrochem.Soc.,1996,143:3923-3927
[54]李炜.场发射平板显示器阳极荧光材料及器件的研究[D].中国科学院上海微系统与信息技术研究所,2000:65
[55]Qian,M.Feng,T.Lin,L.F,et al.Preparation of carbon nanotube field emission device and its driving circuits[J].2008 2nd IEEE International Nanoelectronics Conference,INEC 2008:232-235.
[2]G.O.Mueller.Flat-panel displays for high-definition television[J].Displays,Volume 12,Issue 1,January 1991,Pages 31-40
[3]易晋.CRT、PDP、LCD显示器——终端显示的“三国鼎立”[J].真空电子技术,2001,(06):19-22.
[4]吴祖垲,李勇军,段诚.CRT显示技术的最新进展[J].真空电子技术,2002,(05):4-10.
[5]G.G.P.van Gorkom,T.S.Baller,P.A.Dessens,et al.Flat thin CRT based on controlled electron transport through insulating structures[J].Applied Surface Science,Volume 111,3 February 1997,Pages 276-284
[6]童林夙.平板CRT概况[J].光电子技术,1995,(01):10-18
[7]周艳琼,白木.液晶显示技术综述.影像技术[J],2002,(04):10-15.
[8]Michael E.Becker.Display-metrology for liquid-crystal-television-screens[J].Displays,Volume 26,Issues 4-5,October 2005,Pages 197-207
[9]谢智波.平板显示技术的新进展[J].电视技术,2007,(05):34-36
[10]Seungho Choi,Soo-ghee Oh,Soonil Lee.Application of optical method for quantitative investigation of MgO erosion in a.c.plasma display panels[J].Thin Solid Films,Volume 384,Issue 1,1 March 2001,Pages 115-119
[11]李震梅,董传岱,房华玲.PDP显示技术及其应用[J].山东工程学院学报,2002,(04):10-13.
[12]阙红梅.大屏幕电视机显示方式的发展[J].电子工程师,2000,(06):21-24
[13]扬帆.大屏幕图像显示技术与显示屏的种类及特点[J].家庭电子,2005,(14):8-9.
[14]曹有成.大屏幕投影系统关键技术研究[J].通信与广播电视,2008,(04):29-33.
[15]Hak Gu Lee,Dai Gil Lee.Design of a large LCD panel handling air conveyor with minimum air consumption[J].Mechanism and Machine Theory,Volume 41,Issue 7,July 2006,Pages 790-806
[16]罗志强,陈志雄,郑镇钦.液晶拼接幕墙技术应用[J].中国公共安全(市场版),2007,(08):59-61.
[17]R.J.Visser.Application of polymer light-emitting materials in light-emitting diodes,backlights and displays[J].Philips Journal of Research,Volume 51,Issue 4,1998,Pages 467-477
[18]W.Kurdthongmee.Design and implementation of an FPGA-based multiple-colour LED display board[J].Microprocessors and Microsystems,Volume 29,Issue 7,1 September 2005,Pages 327-336
[19]Z.H.Huang,P.H.Cutler,N.M.Miskovsky,et aI.,Theoretical study of field emission from diamond,Appl.Phys.Lett.,65(1994),2562
[20]D.S.Mao,J.Zhao,W.Li,et al.Electron field emission from nitrogen-containing diamond-like carbon films deposited by filtered are deposition[J].Materials Letters,Volume 41,Issue 3,November 1999,Pages 117-121
[21]J.D.Carey,S.R.P.Silva.Field emission from amorphous semiconductors[J].Solid-State Electronics,Volume 45,Issue 6,June 2001,Pages 1017-1024
[22]朱长纯,史永胜.场致发射显示器的现状与发展[J].真空电子技术,2002,NO 5:
[23]Jong Min Kim,Won Bong Choi,Nae Sung Lee,et al.Field emission from carbon nanotubes for displays[J].Diamond and Related Materials,Volume 9,Issues 3-6,April-May 2000,Pages 1184-1189
[24]Yoshikazu Nakayama,Seiji Akita.Field-emission device with carbon nanotubes for a flat panel display[J].Synthetic Metals,Volume 117,Issues 1-3,15 February 2001,Pages 207-210
[25]J.E.Jung,Y.W.Jin,J.H.Choi,et al.Fabrication of triode-type field emission displays with high-density carbon-nanotube emitter arrays[J].Physica B:Condensed Matter,Volume 323,Issues 1-4,October 2002,Pages 71-77
[26]J.H.Park,J.S.Moon,J.H.Han,et al,Effects of binders and organic vehicles on the emission properties of carbon nanotube paste[J],Diamond & Related Materials 14(2005) 1463-1468
[27]承欢,江剑平.阴极电子学[M].西北电信工程学院出版社,1986.
[28]R.H.Fowler and L.w.Nordheim,Electron emission in intense electric fields,Proc.Roy.Soc.(London)A,119(1928),173
[29]Kleps,D.Nicolaescu,C.Lungu,et al.Porous silicon field emitters for display applications[J].Applied Surface Science,Volume 111,3 February 1997,Pages 228-232
[30]N.S.Xu,S.Ejaz Huq.Novel cold cathode materials and applications[J].Materials Science and Engineering:R:Reports,Volume 48,Issues 2-5,31January 2005,Pages 47-189
[31]W.I.Milne,A.Ilie,J.B.Cui,et al.Field emission from nano-cluster carbon films[J].Diamond and Related Materials,Volume 10,Issue 2,February 2001,Pages 260-264.
[32]成会明等著,纳米碳管制备、结构、物性及应用[M],化学工业出版社,2002.8:322-323
[33]Yong Sheng Shi,Chang-Chun Zhu,Wang Qikun,et al.Large area screen-printing cathode of CNT for FED Diamond and Related Materials,Volume 12,Issue 9,September 2003,Pages 1449-1452
[34]Li Yukui,Zhu Changchun,Liu Xinghui.Field emission display with carbon nanotubes cathode:prepared by a screen-printing process[J].Diamond and Related Materials,Volume 11,Issue 11,November 2002,Pages 1845-1847
[35]Qilong Wang,Wei Lei,Xiaobing Zhang,et al.A novel gate structure in large diagonal size printable CNT-FED[J].Applied Surface Science,Volume 239,Issues 3-4,31 January 2005,Pages 458-463
[36]郑德海,郑军明.丝网印刷工艺(第二版)[M].印刷工业出版社,1994:1-9
[37]Shashurin,M.Keidar.Factors affecting the size and deposition rate of the cathode deposit in an anodic are used to produce carbon nanotubes[J].Carbon,Volume 46,Issue 13,November 2008,Pages 1826-1828
[38]Mineo Hiramatsu,Takahiro Deguchi,Hidetoshi Nagao,et al.Area-selective growth of aligned single-walled carbon nanotube films using microwave plasma-enhanced CVD[J].Diamond and Related Materials,Volume 16,Issues 4-7,April-July 2007,Pages 1126-1130
[39]Zhong Jin,Xuemei Li,Weiwei Zhou,et al.Direct growth of carbon nanotube junctions by a two-step chemical vapor deposition[J].Chemical Physics Letters,Volume 432,Issues 1-3,4 December 2006,Pages 177-183
[40]Fan-Guang Zeng,Chang-Chun Zhu,Weihua Liu,et al.The fabrication and operation of fully printed Carbon nanotube field emission displays[J].Microelectronics Journal 37(2006) 495-499
[41]王莉莉,孙卓,陈婷,等.电泳法制备碳纳米管场发射阴极的研究[J].真空科学与技术学报,2006,26(1):4-7
[42]黄岱,罗淑云.单色FED荧光屏的研制与分析[J].清华大学学报(自然科学版),1999.39(1):26-29
[43]Zhejuan Zhang,Daniel H.C.Chua,Yang Gao,et al.Field-emission properties of carbon nanotubes grown using Cu-Cr catalysts[J].Journal of Vacuum Science and Technology B,Volume 27,Issue 1,pp.41-46(January 2009)
[44]L L Wang,T Chen,T Feng,et al.Effect of sputtered Cu films diffusion barrier on the growth and field emission properties of carbon nanotubes by chemical vapor deposition[J].Applied Physics A 2008,90:701-704
[45]T.Chen,L.L.Wang,Y.W.Chen,et al.Field emission properties of carbon nanotubes film grown on NiCr alloy films[J].Applied Surface Science 2006,253,7046.
[46]P.S.Guo,Z.Sun,Y.W.Chen,et al.A Novel approach to mass synthesis of raw CNTs for printed field emission cathodes by chemical vapor deposition[J].Materials Letters,2006,60:966-969
[47]L.L.Wang,Z.Sun.Growth temperature effect on field emission properties of printable carbon nanotubes cathode[J].Solid-State Electronics 2006,5(50):800-804
[48]Tao Feng,Jinhua Zhang,Qiong Li,et al.Effects of plasma treatment on microstructure and electron field emission properties of screen-printed carbon nanotube films[J].Physica E,2007,36:28-33
[49]余泉茂,刘中仕,荆西平.场发射显示器(FED)荧光粉的研究进展[J].液晶与显示,2005,20(1):7-17
[50]Fitz-Gerald J M,Trottier T A,Singh R K,et al.Significant reduction of cat hodoluminescent degradation in sulfide-based phosphors[J].Appl.Phys.Lett.,1998,72(15):4832488.
[51]Kominami H,Nakamura T,Sowa T K.et al.Low voltage cathodoluminescent properties of phosphors coated with In2O3 by sol-gel method[J].Appl.Surf.Sci.,1997,113-114:521-522.
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