AlGaN/GaN超晶格红外/紫外双色光电探测器研究
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摘要
AlxGa1-xN的禁带宽度可以连续的从3.4eV (GaN)变化到6.2eV （AlN），对应的光波波长范围为200~360nm，它是实现紫外日盲区（200~280nm）光学探测的很好选择。同时GaN和AlN的导带不连续能够达到2eV，使得AlGaN/GaN量子阱结构在实现红外光电探测方面同样具有不可比拟的优势。
紫外光在近地面空气中衰减较快，有效的探测距离在500m左右，红外光可对目标实行远距离识别和追踪，然而空气中该波段背景辐射强度较大。如果能够在红外波段实现远距离的目标跟踪，距离近时切换为紫外探测模式，就能够提高对目标的识别追踪效果，减小复杂的红外背景辐射的影响。更进一步，通过单个器件实现这种双色探测，两者共用一个光学系统，可以减小设备的成本和体积，扩展其应用范围。
本课题的目的是在一个GaN基片上同时实现红外和紫外的双色探测，其中紫外探测通过禁带吸收实现，而红外探测则通过AlGaN/GaN超晶格的子带跃迁结构实现。我们将主要精力放在红外探测部分，因为相对于禁带间的跃迁吸收，超晶格对光子的选择吸收需要考虑势垒层厚度和势阱层厚度等因素导致的量子效应的影响，而这一切在考虑到GaN材料自身的极化现象以后将变得更为复杂。
本文涉及到AlGaN/GaN超晶格光电探测研究和设计的整个体系。包括：超晶格结构的仿真设计，超晶格的MOCVD生长及材料表征，光学特性以及电学特性的测量。取得的主要成果如下：
1.自定义超晶格的结构，基于SILVACO和NEXTNANO3两个软件中自洽求解薛定谔-泊松方程的功能，计算超晶格各个参数对量子阱中子带位置的影响。变化的参数包含：势阱中的掺杂浓度、势垒层厚度、势阱层厚度、势垒层Al组分、温度以及超晶格底部缓冲层的Al组分等。由于GaN基材料自身的极化现象，这些因素对超晶格能带的影响不同于普通的方形势阱。比如，我们首次提出势阱中必须高掺杂（>1019cm-3），否则各个势阱中的电子会被极化作用耗尽，从而起不到光子探测的功能；又如，势垒层的厚度也会影响严重影响势阱中子带的位置。这些现象在非极化材料中是不可想象的。
2.根据仿真确定的超晶格结构，使用MOCVD设备在双面抛光蓝宝石衬底上进行外延生长，然后通过AFM，HRXRD，拉曼光谱等手段对外延结构进行表征，确定我们能够生长出高质量的超晶格结构。对HRXRD结果进行拟合发现势阱层或势垒层厚度均可以减小到1.7nm，且通过对生长配方的修改，可以控制其厚度在1nm范围内变化。
3.测量超晶格的光学吸收特性。独自设计样片加工平台，制备10×5mm2的样片，并将10mm边磨成45°角的光滑斜面。发现由于蓝宝石衬底的吸收，超晶格的红外吸收波段不能大于6.15μm。与中科院上海技术物理研究所合作，测量样片的透射谱，和没有超晶格的样片透射谱相减，得到超晶格的红外吸收峰。结果显示我们成功制备吸收峰值在2.92~4.65μm之间的AlGaN/GaN超晶格材料。同时，光致发光能谱结果显示，紫外吸收峰值在日盲区的探测也可以实现。
4.为了检测材料中AlGaN/GaN界面的缺陷情况我们提出了一种测定界面缺陷的脉冲测试方法，该方法结合仿真可以定性、定量的确定界面处陷阱的参数。这为我们以后深入分析超晶格结构的电学表现打下了坚实的基础。
The forbidden gap of the AlxGa1-xN material can be adjusted continuously from3.4eV (for GaN) to6.2eV (for AlN). It is a good alternative for optical detection inthe Ultraviolet Solar Blind Area (200-280nm). The conduction band discontinuity ofthe AlN and GaN can reach2eV which endows this system a huge competitiveadvantage in the infrared photodetection. The problem is the intensity of the ultravioletlight decreases quickly in the near-surface atmosphere, and the effective detectionrange is not longer than500m, while the infrared light which can be used to realize theremote probing has a considerable background radiation. If we can use the infrareddetection to realize the remote probing and switch to the ultraviolet mode when thedistance from the target is not longer than500m, the efficiency of the target trackingand identification can be enhanced and the influence of the background radiation canbe weakened. Further more, if the detection of the two different wavelengths can berealized with a single device and just one cooling system, the cost and the volume ofthe detector will be decreased and the application areas will be expanded. The purposeof this subject is exactly what we have discussed above, the detection of the ultravioletlight is achieved by the interband transition of the AlGaN/GaN superlattice while thedetection of the infrared light is realized by intersubband transition of the superlattice.We focus our attention on the infrared detection, because the selective absorption ofthe superlattice structure to the infrared light must consider all kinds of parameters ofthe superlattice, and this process is more complicated when the polarization effect istaken into account.
This dissertation refers to the entire process of the design of the AlGaN/GaNsuperlattice photodetection, including the simulation of the superlattice structure, theepitaxial growth of the superlattice with MOCVD, the measurement of the optical andelectric characteristics of the superlattice. The major achievements are listed below:
1. With the use of the software SILVACO and NEXTNANO3, the structures ofthe AlGaN/GaN are defined, and the influence of each parameter on the position of thesubband is analyzed. The analyzed structure parameters include the doping in the wells,the thicknesses of the barriers and wells, the Al component of the barriers, thetemperature, and the Al component in the bottom buffer layers et al. Due to thepolarization effect in GaN-based material, the influence of these parameters on the energy band of the superlattice is different from that of the ordinary quadrate potentialwells. For example, the structure must be high concentration doped, or the electrons inthe wells will be depleted and cannot be used to detect the photons. Also, the barrierthickness will influence the position of the subband in the well which is also beyondimagination in nonpolarized materials.
2. According to the simulation results, the AlGaN/GaN superlattice is epitaxialgrown on the twin polished sapphire substrates by MOCVD. Then, the epitaxialstructures are characterized by means of AFM, HRXRD and Raman et al. The resultshows the high quality superlattice can be realized in our lab. Through analyze to theHRXRD results, the thicknesses of the barriers and the wells can be determined, thethickness of a single layer can reduce to1.7nm, and can be adjusted in1nm range.
3. The optical characteristics of the superlattices are measured. To prepare thesamples met the requirements, a polishing platform is self-made. The result indicatesthat the infrared detection wavelength of the superlattice cannot be longer than6.15μm, because of the restriction of the sapphire. The transmission spectrum of thesuperlattice is obtained by the subtract of the transmission spectrums of the sampleswith and without superlattice, the result shows that AlGaN/GaN superlattice whoseinfrared absorption wavelength locates between2.92and4.65μm can be realized inour lab. The photoluminescence spectrum shows that the optical detection in theUltraviolet Solar Blind Area (200-280nm) can also be realized.
4. For the subsequent examination of the electric characteristics of thesuperlattice, a testing method is proposed in our lab to qualitatively and quantitativelydetect the traps at the interfaces of the AlGaN and GaN.
紫外光在近地面空气中衰减较快，有效的探测距离在500m左右，红外光可对目标实行远距离识别和追踪，然而空气中该波段背景辐射强度较大。如果能够在红外波段实现远距离的目标跟踪，距离近时切换为紫外探测模式，就能够提高对目标的识别追踪效果，减小复杂的红外背景辐射的影响。更进一步，通过单个器件实现这种双色探测，两者共用一个光学系统，可以减小设备的成本和体积，扩展其应用范围。
本课题的目的是在一个GaN基片上同时实现红外和紫外的双色探测，其中紫外探测通过禁带吸收实现，而红外探测则通过AlGaN/GaN超晶格的子带跃迁结构实现。我们将主要精力放在红外探测部分，因为相对于禁带间的跃迁吸收，超晶格对光子的选择吸收需要考虑势垒层厚度和势阱层厚度等因素导致的量子效应的影响，而这一切在考虑到GaN材料自身的极化现象以后将变得更为复杂。
本文涉及到AlGaN/GaN超晶格光电探测研究和设计的整个体系。包括：超晶格结构的仿真设计，超晶格的MOCVD生长及材料表征，光学特性以及电学特性的测量。取得的主要成果如下：
1.自定义超晶格的结构，基于SILVACO和NEXTNANO3两个软件中自洽求解薛定谔-泊松方程的功能，计算超晶格各个参数对量子阱中子带位置的影响。变化的参数包含：势阱中的掺杂浓度、势垒层厚度、势阱层厚度、势垒层Al组分、温度以及超晶格底部缓冲层的Al组分等。由于GaN基材料自身的极化现象，这些因素对超晶格能带的影响不同于普通的方形势阱。比如，我们首次提出势阱中必须高掺杂（>1019cm-3），否则各个势阱中的电子会被极化作用耗尽，从而起不到光子探测的功能；又如，势垒层的厚度也会影响严重影响势阱中子带的位置。这些现象在非极化材料中是不可想象的。
2.根据仿真确定的超晶格结构，使用MOCVD设备在双面抛光蓝宝石衬底上进行外延生长，然后通过AFM，HRXRD，拉曼光谱等手段对外延结构进行表征，确定我们能够生长出高质量的超晶格结构。对HRXRD结果进行拟合发现势阱层或势垒层厚度均可以减小到1.7nm，且通过对生长配方的修改，可以控制其厚度在1nm范围内变化。
3.测量超晶格的光学吸收特性。独自设计样片加工平台，制备10×5mm2的样片，并将10mm边磨成45°角的光滑斜面。发现由于蓝宝石衬底的吸收，超晶格的红外吸收波段不能大于6.15μm。与中科院上海技术物理研究所合作，测量样片的透射谱，和没有超晶格的样片透射谱相减，得到超晶格的红外吸收峰。结果显示我们成功制备吸收峰值在2.92~4.65μm之间的AlGaN/GaN超晶格材料。同时，光致发光能谱结果显示，紫外吸收峰值在日盲区的探测也可以实现。
4.为了检测材料中AlGaN/GaN界面的缺陷情况我们提出了一种测定界面缺陷的脉冲测试方法，该方法结合仿真可以定性、定量的确定界面处陷阱的参数。这为我们以后深入分析超晶格结构的电学表现打下了坚实的基础。
The forbidden gap of the AlxGa1-xN material can be adjusted continuously from3.4eV (for GaN) to6.2eV (for AlN). It is a good alternative for optical detection inthe Ultraviolet Solar Blind Area (200-280nm). The conduction band discontinuity ofthe AlN and GaN can reach2eV which endows this system a huge competitiveadvantage in the infrared photodetection. The problem is the intensity of the ultravioletlight decreases quickly in the near-surface atmosphere, and the effective detectionrange is not longer than500m, while the infrared light which can be used to realize theremote probing has a considerable background radiation. If we can use the infrareddetection to realize the remote probing and switch to the ultraviolet mode when thedistance from the target is not longer than500m, the efficiency of the target trackingand identification can be enhanced and the influence of the background radiation canbe weakened. Further more, if the detection of the two different wavelengths can berealized with a single device and just one cooling system, the cost and the volume ofthe detector will be decreased and the application areas will be expanded. The purposeof this subject is exactly what we have discussed above, the detection of the ultravioletlight is achieved by the interband transition of the AlGaN/GaN superlattice while thedetection of the infrared light is realized by intersubband transition of the superlattice.We focus our attention on the infrared detection, because the selective absorption ofthe superlattice structure to the infrared light must consider all kinds of parameters ofthe superlattice, and this process is more complicated when the polarization effect istaken into account.
This dissertation refers to the entire process of the design of the AlGaN/GaNsuperlattice photodetection, including the simulation of the superlattice structure, theepitaxial growth of the superlattice with MOCVD, the measurement of the optical andelectric characteristics of the superlattice. The major achievements are listed below:
1. With the use of the software SILVACO and NEXTNANO3, the structures ofthe AlGaN/GaN are defined, and the influence of each parameter on the position of thesubband is analyzed. The analyzed structure parameters include the doping in the wells,the thicknesses of the barriers and wells, the Al component of the barriers, thetemperature, and the Al component in the bottom buffer layers et al. Due to thepolarization effect in GaN-based material, the influence of these parameters on the energy band of the superlattice is different from that of the ordinary quadrate potentialwells. For example, the structure must be high concentration doped, or the electrons inthe wells will be depleted and cannot be used to detect the photons. Also, the barrierthickness will influence the position of the subband in the well which is also beyondimagination in nonpolarized materials.
2. According to the simulation results, the AlGaN/GaN superlattice is epitaxialgrown on the twin polished sapphire substrates by MOCVD. Then, the epitaxialstructures are characterized by means of AFM, HRXRD and Raman et al. The resultshows the high quality superlattice can be realized in our lab. Through analyze to theHRXRD results, the thicknesses of the barriers and the wells can be determined, thethickness of a single layer can reduce to1.7nm, and can be adjusted in1nm range.
3. The optical characteristics of the superlattices are measured. To prepare thesamples met the requirements, a polishing platform is self-made. The result indicatesthat the infrared detection wavelength of the superlattice cannot be longer than6.15μm, because of the restriction of the sapphire. The transmission spectrum of thesuperlattice is obtained by the subtract of the transmission spectrums of the sampleswith and without superlattice, the result shows that AlGaN/GaN superlattice whoseinfrared absorption wavelength locates between2.92and4.65μm can be realized inour lab. The photoluminescence spectrum shows that the optical detection in theUltraviolet Solar Blind Area (200-280nm) can also be realized.
4. For the subsequent examination of the electric characteristics of thesuperlattice, a testing method is proposed in our lab to qualitatively and quantitativelydetect the traps at the interfaces of the AlGaN and GaN.
引文
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