Ⅲ-Ⅴ族半导体MQW平面波导光器件的研究
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摘要
DWDM已成为光互联网信息传输层的主要技术平台,移动、卫星及光纤通信网络的融合是下一代互联网发展的必然趋势。光子集成光路(PICs)和光电集成电路(OEICs)是各类通信主干网节点和终端设备的关键模块。利用III-V族半导体多量子阱(MQW)材料的激子吸收非线性光学效应,可制成各类低功耗、超高速平面光波光路(PLC)单元,从而为研制PICs和OEICs奠定基础。本文围绕着III-V族半导体MQW-PLC中两个重要的单元器件:光调制器/开关(OM/S)和谐振腔滤波器(RF),开展理论分析、优化设计、材料生长、图形加工、样品制作以及测试分析等研究工作。
第一章简要回顾了光网络、微波光子系统的发展过程以及PLC和PICs在其中的作用,全面概述了各类平面波导高速光调制器和光滤波器的研究进展,综述并评价了III-V族半导体MQW的性能、制作工艺和主要分析方法,提出了深入开展研究工作的规划和思路。
第二章重点讨论了时域有限差分束传输法(TD-FD-BPM)、时域有限差分法(FDTD)及分析介质光波导的边界条件等问题,基于完全匹配层(PML)吸收边界条件,建立了分析平面光波导器件的二维、三维数值仿真模型和平台,为MQW-OM/S和RF光传输通道的优化设计提供了精确且高效的工具。
第三章详细描述了高折射率差平面单谐振腔中光波激励、谐振、耗散的物理过程和基本特征,建立了各类谐振腔单元光路的系统分析模型和主要性能参数的完整表达式;建立了四端口谐振腔系统分析理论,给出了各端口传输系数的表达式;讨论和确定了GaAs/GaAlAs双异质结(DH)、GaAs/InGaAs-MQW和InP/InGaAsP-MQW脊波导结构参数以及耦合方式;基于3D-FDTD软件,优化设计出GaAs/GaAlAs-DH对称双、四矩形并联驻波RFs和单、串联跑道形行波RFs,GaAs/InGaAs-MQW单环以及InP/InGaAsP-MQW单矩形、混合型RFs。首次提出将多模干涉(MMI)波导等同于矩形谐振腔的构想,使其兼具多模干涉和谐振选频两种功能。首次提出具有多向传输通道和接口的谐振腔滤波系统的构想,并通过了数值仿真论证。
第四章基于III-V族半导体MQW-OM/S的设计需求,系统讨论了MQW的物理特性,分析了电吸收系数与MQW结构参数的关系,设计了InP/InGaAsP-MQW波导结构,确定了结构参数及掺杂比等;分析了InP/InGaAsP-MQW脊波导及相关器件中光波传输;建立了行波(TW)电极准静态和直接时域近似分析模型,详细分析讨论了行波电极的调制特性,为确定互作用区位置和行波电极的设计、制作和测试提供了理论依据。提出了新型的2X1光双波合路平面波导OM/S单元器件结构,可对两路光信号共用单调制器/开关获得调制。
第五章主要重点介绍了分子束外延生长技术,基于国内最先进的III-V族半导体材料生长工艺线,研制出10周期InGaAsP/InP应变多量子阱和相应包层的外延材料。对实验样品进行了10K温度下的PL光谱测试和双晶衍射测试,结果表明:阱层带隙波长为1520nm,阱层周期为17.1±0.3nm,与设计的标称值相符;量子阱层界面质量良好且与衬底匹配;该材料适于制成电吸收型调制器/开关。
第六章首先讨论并制定了III-V族半导体MQW平面波导制作工艺归范和流程,着重提出一种制作金属电极的新方法,妥善解决了器件制作的难点;在我国先进的工艺线上,研制出7种平面波导RFs和2种平面波导OM/S芯片。建立了具有国际先进水平的81910A光子全参数测试系统,实现了裸片与单模光纤的高效耦合,9类器件裸片均在实验室内通过了光学性能和静电测试,实际测试结果与仿真设计结果符合较好。其中,InP/InGaAsP-MQW-MZ-OM/S在外加电压1.2-1.8v时,捕获到较强的电吸收效应,光功率变化率约为0.33/v;MMI型矩形RF获得比仅基于谐振腔的RF更理想的输出功率谱;InP/InGaAsP-MQW单矩形/环行混合RF滤波的性能优于同类非混合器件。
In the layer of optical internet information transportation, DWDM has become the chief technology. And the combination of the mobile, satellite and optical communications is the certain trend. Photonic Integrate Circuits (PICs) and Optical Electronic Integrate Circuits (OEICs) are the key module of all kinds of communication backbone net and terminal devices. Using the nonlinear effect of exciton absorption in Multiple Quantum Well (MQW) made ofⅢ-Ⅴfamily semiconductor, we can fabricate kinds of low power consumption and ultra high speed Planar Lightwave Circuit (PLC). This can be the fundament of PICs and OEICs. InⅢ-Ⅴfamily MQW-PLC,two important unit devices are studied: the Optical Modulator/Switch and Resonator Filter (RF). The work include theory analysis, optimization, material growth, graphic process, sample fabricate and test analysis.
In the first chapter, the development of optical networks and microwave photonic system is reviewed as well as the application of PLC and PICs in the system. The research progress of all kinds of planar waveguide high speed optical modulators and optical filters are reviewed, the performance ,technics and analysis method ofⅢ-Ⅴfamily MQW are estimated. The plan and idea of deep research work are brought forward.
The second chapter is mainly about Time Domain-Finite Difference-Beam Propagation Method (TD-FD-BPM), Finite Difference in Time Domain (FDTD) and the boundary conduction of medium optical waveguide, Perfect match Layer (PML) absorption boundary conduction. The founding of 2D and 3D planar optical waveguide numerical value simulation module and platform supplies a convenient tool for the optimization of MQW-OM/S and RF optical transmit way. In the third chapter, the optical excitation, resonance and loss in high index contrast planar single resonator are discussed in detail. The analysis module and the explicit expressions to main performance parameters of all kinds of resonate cavities are given. The theory of four ports resonate cavity is founded and the transmission coefficients of four ports are given. The ridge waveguide parameters and coupling way of GaAs/GaAlAs double heterojunction (DH) and InP/InGaAsP-MQW are selected. Optimizing the GaAs/GaAlAs-DH symmetrical double rectangles and four rectangles parallel connected standing wave RFs as well as single and series connected racetrack resonators, and GaAl/InGaAs-MQW single ring, InP/InGaAsP-MQW singlerectangle and mixed RFs. Multiple Mode Interference (MMI) waveguide is viewed as a rectangular resonator for the first time, and it can be used as multiple mode interference and resonator. Resonator filter system with multiple direction transmission ways and interface is proposed for the first time, and numerical value simulation confirms this.
In the fourth chapter, on the demand ofⅢ-ⅤMQW-OM/S design, the physical characters of MQW are systematically discussed. The relationship between electroabsorption and MQW structure parameters is analysed and InP/InGaAsP-MQW waveguide structure is designed. The optical transmission analysis of InP/InGaAsP-MQW ridge waveguide and the unit device is given.
The Traveling Wave (TW) electrode quasi-static and direct time domain module are established, and the traveling wave modulate character is analysed in detail. This is the theory base of confirming the inter effect location and the design as well as fabrication and test of traveling wave electrode. A novel structure of 2×1 optical double waves combine planar waveguide OM/S unit device, which can serves as a modulator for two optical signal, is presented.
Technology of Molecular Beam Epitaxy (MBE) is introduced in chapter five. InGaAsP/InP strain MQW and the relevant cladding layer are fabricated based on inland top levelⅢ-Ⅴsemiconductor processing line. Under temperature of 10K, the PL spectrum and double-crystal diffraction are taken measurement. The results show, that the band gap wavelength in well layer is 1520 nm, and the period of well layers is 17.1±0.3 nm, which accord with the label value. The quantum well layer has a good quality interface and is matching with the substrate. The material is suit for electroabsorption modulator/switch.
In chapter six, the processing flow forⅢ-Ⅴsemiconductor MQW planar waveguide is established, a new method to fabricate metal electrode is proposed to solve the fabrication problem. Seven kinds of planar waveguide RFs and two kinds of OM/S are manufactured on inland advanced processing line. The international advanced 81910A photon all parameters test system is established, which can provide efficient coupling for naked chip and single mode fiber. The naked chips of nine kinds of devices are tested for optical and static performance in lab. The results show a good unification with simulating result. When InP/InGaAsP-MQW-MZ-OM/S under a bias of 1.2-1.8V voltage, there is a strong electroabsorption effect, optical power varies 0.33/V. The MMI rectangular RF gets a better output than normal RF. InP/InGaAsP-MQW mixed RF of single rectangular and ring shows better performance than unmixed RF.
第一章简要回顾了光网络、微波光子系统的发展过程以及PLC和PICs在其中的作用,全面概述了各类平面波导高速光调制器和光滤波器的研究进展,综述并评价了III-V族半导体MQW的性能、制作工艺和主要分析方法,提出了深入开展研究工作的规划和思路。
第二章重点讨论了时域有限差分束传输法(TD-FD-BPM)、时域有限差分法(FDTD)及分析介质光波导的边界条件等问题,基于完全匹配层(PML)吸收边界条件,建立了分析平面光波导器件的二维、三维数值仿真模型和平台,为MQW-OM/S和RF光传输通道的优化设计提供了精确且高效的工具。
第三章详细描述了高折射率差平面单谐振腔中光波激励、谐振、耗散的物理过程和基本特征,建立了各类谐振腔单元光路的系统分析模型和主要性能参数的完整表达式;建立了四端口谐振腔系统分析理论,给出了各端口传输系数的表达式;讨论和确定了GaAs/GaAlAs双异质结(DH)、GaAs/InGaAs-MQW和InP/InGaAsP-MQW脊波导结构参数以及耦合方式;基于3D-FDTD软件,优化设计出GaAs/GaAlAs-DH对称双、四矩形并联驻波RFs和单、串联跑道形行波RFs,GaAs/InGaAs-MQW单环以及InP/InGaAsP-MQW单矩形、混合型RFs。首次提出将多模干涉(MMI)波导等同于矩形谐振腔的构想,使其兼具多模干涉和谐振选频两种功能。首次提出具有多向传输通道和接口的谐振腔滤波系统的构想,并通过了数值仿真论证。
第四章基于III-V族半导体MQW-OM/S的设计需求,系统讨论了MQW的物理特性,分析了电吸收系数与MQW结构参数的关系,设计了InP/InGaAsP-MQW波导结构,确定了结构参数及掺杂比等;分析了InP/InGaAsP-MQW脊波导及相关器件中光波传输;建立了行波(TW)电极准静态和直接时域近似分析模型,详细分析讨论了行波电极的调制特性,为确定互作用区位置和行波电极的设计、制作和测试提供了理论依据。提出了新型的2X1光双波合路平面波导OM/S单元器件结构,可对两路光信号共用单调制器/开关获得调制。
第五章主要重点介绍了分子束外延生长技术,基于国内最先进的III-V族半导体材料生长工艺线,研制出10周期InGaAsP/InP应变多量子阱和相应包层的外延材料。对实验样品进行了10K温度下的PL光谱测试和双晶衍射测试,结果表明:阱层带隙波长为1520nm,阱层周期为17.1±0.3nm,与设计的标称值相符;量子阱层界面质量良好且与衬底匹配;该材料适于制成电吸收型调制器/开关。
第六章首先讨论并制定了III-V族半导体MQW平面波导制作工艺归范和流程,着重提出一种制作金属电极的新方法,妥善解决了器件制作的难点;在我国先进的工艺线上,研制出7种平面波导RFs和2种平面波导OM/S芯片。建立了具有国际先进水平的81910A光子全参数测试系统,实现了裸片与单模光纤的高效耦合,9类器件裸片均在实验室内通过了光学性能和静电测试,实际测试结果与仿真设计结果符合较好。其中,InP/InGaAsP-MQW-MZ-OM/S在外加电压1.2-1.8v时,捕获到较强的电吸收效应,光功率变化率约为0.33/v;MMI型矩形RF获得比仅基于谐振腔的RF更理想的输出功率谱;InP/InGaAsP-MQW单矩形/环行混合RF滤波的性能优于同类非混合器件。
In the layer of optical internet information transportation, DWDM has become the chief technology. And the combination of the mobile, satellite and optical communications is the certain trend. Photonic Integrate Circuits (PICs) and Optical Electronic Integrate Circuits (OEICs) are the key module of all kinds of communication backbone net and terminal devices. Using the nonlinear effect of exciton absorption in Multiple Quantum Well (MQW) made ofⅢ-Ⅴfamily semiconductor, we can fabricate kinds of low power consumption and ultra high speed Planar Lightwave Circuit (PLC). This can be the fundament of PICs and OEICs. InⅢ-Ⅴfamily MQW-PLC,two important unit devices are studied: the Optical Modulator/Switch and Resonator Filter (RF). The work include theory analysis, optimization, material growth, graphic process, sample fabricate and test analysis.
In the first chapter, the development of optical networks and microwave photonic system is reviewed as well as the application of PLC and PICs in the system. The research progress of all kinds of planar waveguide high speed optical modulators and optical filters are reviewed, the performance ,technics and analysis method ofⅢ-Ⅴfamily MQW are estimated. The plan and idea of deep research work are brought forward.
The second chapter is mainly about Time Domain-Finite Difference-Beam Propagation Method (TD-FD-BPM), Finite Difference in Time Domain (FDTD) and the boundary conduction of medium optical waveguide, Perfect match Layer (PML) absorption boundary conduction. The founding of 2D and 3D planar optical waveguide numerical value simulation module and platform supplies a convenient tool for the optimization of MQW-OM/S and RF optical transmit way. In the third chapter, the optical excitation, resonance and loss in high index contrast planar single resonator are discussed in detail. The analysis module and the explicit expressions to main performance parameters of all kinds of resonate cavities are given. The theory of four ports resonate cavity is founded and the transmission coefficients of four ports are given. The ridge waveguide parameters and coupling way of GaAs/GaAlAs double heterojunction (DH) and InP/InGaAsP-MQW are selected. Optimizing the GaAs/GaAlAs-DH symmetrical double rectangles and four rectangles parallel connected standing wave RFs as well as single and series connected racetrack resonators, and GaAl/InGaAs-MQW single ring, InP/InGaAsP-MQW singlerectangle and mixed RFs. Multiple Mode Interference (MMI) waveguide is viewed as a rectangular resonator for the first time, and it can be used as multiple mode interference and resonator. Resonator filter system with multiple direction transmission ways and interface is proposed for the first time, and numerical value simulation confirms this.
In the fourth chapter, on the demand ofⅢ-ⅤMQW-OM/S design, the physical characters of MQW are systematically discussed. The relationship between electroabsorption and MQW structure parameters is analysed and InP/InGaAsP-MQW waveguide structure is designed. The optical transmission analysis of InP/InGaAsP-MQW ridge waveguide and the unit device is given.
The Traveling Wave (TW) electrode quasi-static and direct time domain module are established, and the traveling wave modulate character is analysed in detail. This is the theory base of confirming the inter effect location and the design as well as fabrication and test of traveling wave electrode. A novel structure of 2×1 optical double waves combine planar waveguide OM/S unit device, which can serves as a modulator for two optical signal, is presented.
Technology of Molecular Beam Epitaxy (MBE) is introduced in chapter five. InGaAsP/InP strain MQW and the relevant cladding layer are fabricated based on inland top levelⅢ-Ⅴsemiconductor processing line. Under temperature of 10K, the PL spectrum and double-crystal diffraction are taken measurement. The results show, that the band gap wavelength in well layer is 1520 nm, and the period of well layers is 17.1±0.3 nm, which accord with the label value. The quantum well layer has a good quality interface and is matching with the substrate. The material is suit for electroabsorption modulator/switch.
In chapter six, the processing flow forⅢ-Ⅴsemiconductor MQW planar waveguide is established, a new method to fabricate metal electrode is proposed to solve the fabrication problem. Seven kinds of planar waveguide RFs and two kinds of OM/S are manufactured on inland advanced processing line. The international advanced 81910A photon all parameters test system is established, which can provide efficient coupling for naked chip and single mode fiber. The naked chips of nine kinds of devices are tested for optical and static performance in lab. The results show a good unification with simulating result. When InP/InGaAsP-MQW-MZ-OM/S under a bias of 1.2-1.8V voltage, there is a strong electroabsorption effect, optical power varies 0.33/V. The MMI rectangular RF gets a better output than normal RF. InP/InGaAsP-MQW mixed RF of single rectangular and ring shows better performance than unmixed RF.
引文
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