半导体激光器辐射效应及影响研究
摘要
近年来,随着航天工业和核工业的发展,光子技术在通信领域的应用越来越受到重视。半导体激光器因为具有体积小、寿命长、功率高、成本低和容易使用等优点广泛应用于光通信系统中,是光通信中的核心器件之一。然而,在具有严重辐射的环境中,半导体激光器的输出光功率会受到辐射干扰,这种干扰对于通信误码率也会产生很大影响。为了降低这种影响可以采取器件加固设计和系统调节的方法。因此,一方面可以通过建立辐射对半导体激光器光功率影响的理论模型,深入分析半导体激光器结构参数以及材料参数对抗辐射性能的影响,为器件加固设计提供参考;另一方面在此基础上建立辐射对通信误码率影响模型,深入了解辐射对通信误码率影响过程及其变化规律,进而寻找调节系统参数的规律降低辐射影响。由于辐射对半导体激光器会产生不同作用机理,因此表现出的效果也不同。总体来说主要会产生两种效应,瞬态电离效应和位移损伤效应,因此光功率模型和误码率模型也都受到这两种效应的影响。基于以上目的本文主要内容包括以下几方面:
(1) LD瞬态电离效应光学响应模型研究。瞬态电离效应是辐射导致外层电子电离,并在LD中产生光电流,这种电流与电源注入电流是无差别的,因此进一步导致光功率增加。通过在载流子速率方程中引入电离项,并与光子速率方程联立求解,在单模稳定激射状态下获得LD瞬态电离效应光学响应模型。为了证明该模型的正确性,根据文献[100]中的参数进行了计算,并与实验结果进行了比对,结果表明理论计算结果与文献实验结果相符,从而验证了该模型的正确性。在此基础上定义了光学增益因子,该因子表征了该类型LD光功率对电离效应的敏感程度,它是由激光器本身微观结构、材料参数决定。并且进一步分析了输出镜反射率以及有源层厚度对光学增益因子的影响,该结果可为器件加固设计提供参考。
(2) LD总剂量效应光学响应模型研究。该部分包含两部分内容:首先推导了位移效应光学响应模型,并获得了光功率衰减因子的微观参数表达式;其次建立了半导体激光器辐射效应综合光学响应模型。
利用O. Gilard的半导体激光器阈值载流子密度辐射损伤模型,从载流子速率方程和光子速率方程入手,获得了LD位移效应光学响应模型,在此基础上给出了光功率衰减因子表达式。与Y. H. Zhao等人的衰减因子不同的是,该衰减因子表达式包含了材料、结构参数,可为器件加固设计提供更为直接的参考。在此基础上,分析了输出镜反射率以及谐振腔长度对该因子的影响。并采用1550nm激光器进行了辐射效应验证实验,实验结果验证了该模型的正确性。
辐射对半导体激光器光功率的总体影响应该是瞬态电离效应和位移效应综合作用的结果。因此,在综合考虑了瞬态电离效应的光电流增加因素和位移效应的阈值电流密度衰减因素的基础上,获得了LD辐射效应综合光学响应模型。由于该模型考虑了综合作用结果,因此更具有实际应用价值。
(3)半导体激光器辐射效应对通信误码率的影响及改善方法研究
分别分析了半导体激光器瞬态电离效应光学响应和位移效应光学响应对通信误码率的影响。
首先,利用美国大气海洋局发布的空间高轨辐射环境数据,统计得到高轨环境剂量率概率密度函数近似符合高斯模型。该模型为计算空间高轨电离效应影响打下基础。其次,在考虑入射光功率随机变化和接收机高斯噪声的双重影响下,获得了误码率的计算模型。并根据该模型仿真研究了LD瞬态电离效应光学效应对误码率的影响。再次,将辐射对LD光功率衰减因素引入到误码率计算方程中,建立了LD位移效应光学响应对误码率影响计算模型。并选用典型系统的参数进行了仿真分析。在此基础上,为了降低辐射对误码率的影响,讨论了阈值、消光比、探测器增益系数和LD输出光功率调整对降低辐射影响的作用,并给出了阈值变化模型和消光比最佳取值范围。
In recent years, with the development of the aerospace industry and nuclear industry, the application of photonic technology is seriously considered for communication and monitoring fields. Laser diodes (LD) has been extensively used in optical communication systems, because of its, for example small volume, long life-span, high-power and low cost as well as easy to use etc. LD is one of the key devices in free-space optical communications. However, the radiation induce a seriously effect on the output of LD and this effect will lead to the increase of BER. For decreasing this kind of effect we can take the method of device strengthen and system regulation. Therefore in the one hand we can set up the theoretical model of the effect of radiation on LD’s output power and then study the relationship between the LD’s irradiation resistance and its structure and material parameters, which can give reference for the device strengthen. In the other hand we set up the model of the effect of radiation on BER,and then study the process and mechanism of this effect, which can give reference for the system regulation. Because of the different mechanism of radiation on LD the effect can be divided into two different effects that is transient ionizing effect and displacement effect,
Based on the above describe, the content of this paper mainly includes the following aspects:
(1) The study on the model that optical response of LD to the transient ionizing effect. The radiation will lead to the ionization of outer election in LD, and generate photocurrent in LD; this kind of current has no difference with the injection current, thus leading to an optical power increases. In this paper, we introduce ionization item to the carrier rate equation, combine the photon rate equation, and derive the optical response model of LD transient ionization effect under the single-mode lasing state. According to the reference [100], the experimental results are calculated. The results show that the experimental results in the reference [100] are in the range of calculated results, which verifies the correctness of the model. Based on this model, the definition of optical gain factor is given. The factor is determined by LD micro-structural parameters, and reflects the sensitive degree of ionization effect on the LD. In order to provide a reference for the reinforce design of the device. The impacts of the output mirror reflectivity and the active layer thickness on optical gain factor are analyzed.
(2) The study of optical response model of LD to total dose effect. This part mainly includes two aspects: in the one hand, we deduce the optical response model of displacement effect and get the microscopic parameter expression of optical power decay factor. In the other hand, we set up the integrated optical response model of LD’s radiation effect.
First, we use the radiation damage model of LD threshold carrier density which is from O. Gilard, and then combine the carrier rate equation and photon rate equation; finally, we derive the model of optical response of LD to displacement effect. Based on this model we get the expression of optical power decay factor. Our decay factor expression includes the structure and material parameters. So it can give direct reference for devices strengthen. On this basis, the impact of the output mirror reflectivity and the cavity length on the factor is analyzed. The radiation experimental verification is carried out using 1550nm LD, and the experimental results verify the correctness of the model.
The impact of radiation on LD’s output optical power should be the integration results of both transient ionization effects and displacement effects. Therefore, based on the consideration of both photocurrent increase factor due to transient ionization effects and threshold current density decrease factor due to displacement effects, we obtain an integrated LD optical response model of radiation effect. As we consider the integrated factors in this model, it has more practical applications.
(3) The effect of radiation on BER of the system and the improving method. In this part we analyze the effect of transient effect and accumulative damage effect on BER.
First, according to the track statistics of the space radiation environment particle data which is from NOAA (National Oceanic and Atmospheric Administration), the probability distribution model of space radiation dose rate is given, it provides a basis for calculating the effect of ionization effect on space optical communication BER. Second, we deduce a model of LD transient ionization effect on BER. The model generally provides a BER calculation method in the role of the random fluctuations in the incident light power and the receive noise. Based on this model we simulated the effect of the optical response of LD to the transient ionization effects. At last, we introduce the output power reducing effect into the equation of BER, and deduce a model for calculating BER. Then we made research on simulation analysis for the effect some typical parameters. Based on the research we discuss how to lower the influence of the output power on BER through changing the threshold, the extinction ratio, the gain factor and the output power. In the end we deduce the model of the change of threshold and the best value range of extinction ratio
(1) LD瞬态电离效应光学响应模型研究。瞬态电离效应是辐射导致外层电子电离,并在LD中产生光电流,这种电流与电源注入电流是无差别的,因此进一步导致光功率增加。通过在载流子速率方程中引入电离项,并与光子速率方程联立求解,在单模稳定激射状态下获得LD瞬态电离效应光学响应模型。为了证明该模型的正确性,根据文献[100]中的参数进行了计算,并与实验结果进行了比对,结果表明理论计算结果与文献实验结果相符,从而验证了该模型的正确性。在此基础上定义了光学增益因子,该因子表征了该类型LD光功率对电离效应的敏感程度,它是由激光器本身微观结构、材料参数决定。并且进一步分析了输出镜反射率以及有源层厚度对光学增益因子的影响,该结果可为器件加固设计提供参考。
(2) LD总剂量效应光学响应模型研究。该部分包含两部分内容:首先推导了位移效应光学响应模型,并获得了光功率衰减因子的微观参数表达式;其次建立了半导体激光器辐射效应综合光学响应模型。
利用O. Gilard的半导体激光器阈值载流子密度辐射损伤模型,从载流子速率方程和光子速率方程入手,获得了LD位移效应光学响应模型,在此基础上给出了光功率衰减因子表达式。与Y. H. Zhao等人的衰减因子不同的是,该衰减因子表达式包含了材料、结构参数,可为器件加固设计提供更为直接的参考。在此基础上,分析了输出镜反射率以及谐振腔长度对该因子的影响。并采用1550nm激光器进行了辐射效应验证实验,实验结果验证了该模型的正确性。
辐射对半导体激光器光功率的总体影响应该是瞬态电离效应和位移效应综合作用的结果。因此,在综合考虑了瞬态电离效应的光电流增加因素和位移效应的阈值电流密度衰减因素的基础上,获得了LD辐射效应综合光学响应模型。由于该模型考虑了综合作用结果,因此更具有实际应用价值。
(3)半导体激光器辐射效应对通信误码率的影响及改善方法研究
分别分析了半导体激光器瞬态电离效应光学响应和位移效应光学响应对通信误码率的影响。
首先,利用美国大气海洋局发布的空间高轨辐射环境数据,统计得到高轨环境剂量率概率密度函数近似符合高斯模型。该模型为计算空间高轨电离效应影响打下基础。其次,在考虑入射光功率随机变化和接收机高斯噪声的双重影响下,获得了误码率的计算模型。并根据该模型仿真研究了LD瞬态电离效应光学效应对误码率的影响。再次,将辐射对LD光功率衰减因素引入到误码率计算方程中,建立了LD位移效应光学响应对误码率影响计算模型。并选用典型系统的参数进行了仿真分析。在此基础上,为了降低辐射对误码率的影响,讨论了阈值、消光比、探测器增益系数和LD输出光功率调整对降低辐射影响的作用,并给出了阈值变化模型和消光比最佳取值范围。
In recent years, with the development of the aerospace industry and nuclear industry, the application of photonic technology is seriously considered for communication and monitoring fields. Laser diodes (LD) has been extensively used in optical communication systems, because of its, for example small volume, long life-span, high-power and low cost as well as easy to use etc. LD is one of the key devices in free-space optical communications. However, the radiation induce a seriously effect on the output of LD and this effect will lead to the increase of BER. For decreasing this kind of effect we can take the method of device strengthen and system regulation. Therefore in the one hand we can set up the theoretical model of the effect of radiation on LD’s output power and then study the relationship between the LD’s irradiation resistance and its structure and material parameters, which can give reference for the device strengthen. In the other hand we set up the model of the effect of radiation on BER,and then study the process and mechanism of this effect, which can give reference for the system regulation. Because of the different mechanism of radiation on LD the effect can be divided into two different effects that is transient ionizing effect and displacement effect,
Based on the above describe, the content of this paper mainly includes the following aspects:
(1) The study on the model that optical response of LD to the transient ionizing effect. The radiation will lead to the ionization of outer election in LD, and generate photocurrent in LD; this kind of current has no difference with the injection current, thus leading to an optical power increases. In this paper, we introduce ionization item to the carrier rate equation, combine the photon rate equation, and derive the optical response model of LD transient ionization effect under the single-mode lasing state. According to the reference [100], the experimental results are calculated. The results show that the experimental results in the reference [100] are in the range of calculated results, which verifies the correctness of the model. Based on this model, the definition of optical gain factor is given. The factor is determined by LD micro-structural parameters, and reflects the sensitive degree of ionization effect on the LD. In order to provide a reference for the reinforce design of the device. The impacts of the output mirror reflectivity and the active layer thickness on optical gain factor are analyzed.
(2) The study of optical response model of LD to total dose effect. This part mainly includes two aspects: in the one hand, we deduce the optical response model of displacement effect and get the microscopic parameter expression of optical power decay factor. In the other hand, we set up the integrated optical response model of LD’s radiation effect.
First, we use the radiation damage model of LD threshold carrier density which is from O. Gilard, and then combine the carrier rate equation and photon rate equation; finally, we derive the model of optical response of LD to displacement effect. Based on this model we get the expression of optical power decay factor. Our decay factor expression includes the structure and material parameters. So it can give direct reference for devices strengthen. On this basis, the impact of the output mirror reflectivity and the cavity length on the factor is analyzed. The radiation experimental verification is carried out using 1550nm LD, and the experimental results verify the correctness of the model.
The impact of radiation on LD’s output optical power should be the integration results of both transient ionization effects and displacement effects. Therefore, based on the consideration of both photocurrent increase factor due to transient ionization effects and threshold current density decrease factor due to displacement effects, we obtain an integrated LD optical response model of radiation effect. As we consider the integrated factors in this model, it has more practical applications.
(3) The effect of radiation on BER of the system and the improving method. In this part we analyze the effect of transient effect and accumulative damage effect on BER.
First, according to the track statistics of the space radiation environment particle data which is from NOAA (National Oceanic and Atmospheric Administration), the probability distribution model of space radiation dose rate is given, it provides a basis for calculating the effect of ionization effect on space optical communication BER. Second, we deduce a model of LD transient ionization effect on BER. The model generally provides a BER calculation method in the role of the random fluctuations in the incident light power and the receive noise. Based on this model we simulated the effect of the optical response of LD to the transient ionization effects. At last, we introduce the output power reducing effect into the equation of BER, and deduce a model for calculating BER. Then we made research on simulation analysis for the effect some typical parameters. Based on the research we discuss how to lower the influence of the output power on BER through changing the threshold, the extinction ratio, the gain factor and the output power. In the end we deduce the model of the change of threshold and the best value range of extinction ratio
引文
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