热处理对MOCVD外延生长GaN薄膜性能的影响
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摘要
GaN是一种宽禁带直接带隙半导体材料,在电子器件领域有着广泛的应用。但由于缺乏合适的衬底材料,限制了器件性能的进一步提高。因此,如何提高GaN外延层的性能就成为GaN材料研究和应用中的主要问题。
本文采用金属有机化学气相沉积(MOCVD)生长技术,在蓝宝石衬底上生长出GaN外延层,并进行快速热处理和常规热处理,研究了热处理对GaN外延层的性能的影响。
结果表明,经过热处理的样品其晶体质量明显优于未经过热处理的样品,随着快速热处理退火温度的升高,GaN外延层的FWHM逐渐变窄,其晶体质量逐渐变高;随着常规热处理退火时间的延长,GaN外延层的晶体质量有所提高。与未经过热处理的GaN薄膜相比,经过热处理的样品中的残余应力得到了很大缓解。未经过热处理的样品黄光输出强度明显高于经过热处理的样品,表明采用热处理方法提高了GaN薄膜的发光性能。对样品快速热处理前后的电学性能进行了研究,结果显示经过快速热处理的样品其电学性能得到了很大的提高,当样品经过950℃快速热处理后,其载流子浓度达到1×1018cm-3。
GaN is wide band gap and direct-gap semiconductor material. It is broadly applied in the area of semiconductor devices. However, the develepment of GaN based devices is confined by the less of suitable substrate materials. So how to improve the quality of GaN epilayers is the important.
In this paper, GaN epilayer was grown on sapphire substrate in Metal Organic Chemical Vapor Deposition (MOCVD) reactor. Rapid thermal processor and conventional heat treatment were introduced to study the effect of heat treatment on the properties of GaN epilayers.
The results showed that the quality of the GaN epilayer was improved after heat treatment. The full-width at half- maximum (FWHM) of the GaN epilayer became narrow and the quality of the epilayer was improved along with the rise of annealed temperature and annealed time extended. The residual strain of the GaN epilayer heat-treated was released. The yellow-band intensity of the GaN epilayer without heat treatment is higher than that heat-treated. It shows the luminescence property was improved through heat treatment. The electrical performance of the GaN epilayer with heat treatment were compared with the GaN layer without heat-treated, the results showed that the electrical performance was improved after heat treatment. The carrier concentration of the sample which was rapid thermal processor by 950℃is 1×1018cm-3.
本文采用金属有机化学气相沉积(MOCVD)生长技术,在蓝宝石衬底上生长出GaN外延层,并进行快速热处理和常规热处理,研究了热处理对GaN外延层的性能的影响。
结果表明,经过热处理的样品其晶体质量明显优于未经过热处理的样品,随着快速热处理退火温度的升高,GaN外延层的FWHM逐渐变窄,其晶体质量逐渐变高;随着常规热处理退火时间的延长,GaN外延层的晶体质量有所提高。与未经过热处理的GaN薄膜相比,经过热处理的样品中的残余应力得到了很大缓解。未经过热处理的样品黄光输出强度明显高于经过热处理的样品,表明采用热处理方法提高了GaN薄膜的发光性能。对样品快速热处理前后的电学性能进行了研究,结果显示经过快速热处理的样品其电学性能得到了很大的提高,当样品经过950℃快速热处理后,其载流子浓度达到1×1018cm-3。
GaN is wide band gap and direct-gap semiconductor material. It is broadly applied in the area of semiconductor devices. However, the develepment of GaN based devices is confined by the less of suitable substrate materials. So how to improve the quality of GaN epilayers is the important.
In this paper, GaN epilayer was grown on sapphire substrate in Metal Organic Chemical Vapor Deposition (MOCVD) reactor. Rapid thermal processor and conventional heat treatment were introduced to study the effect of heat treatment on the properties of GaN epilayers.
The results showed that the quality of the GaN epilayer was improved after heat treatment. The full-width at half- maximum (FWHM) of the GaN epilayer became narrow and the quality of the epilayer was improved along with the rise of annealed temperature and annealed time extended. The residual strain of the GaN epilayer heat-treated was released. The yellow-band intensity of the GaN epilayer without heat treatment is higher than that heat-treated. It shows the luminescence property was improved through heat treatment. The electrical performance of the GaN epilayer with heat treatment were compared with the GaN layer without heat-treated, the results showed that the electrical performance was improved after heat treatment. The carrier concentration of the sample which was rapid thermal processor by 950℃is 1×1018cm-3.
引文
[1]Yam F K, Hassan Z. Schottky diode based on porous GaN for hydrogen gas sensing application. Applied Surface Science, 2007, 253(24): 9525-9528
[2]Davis R F, Einfeldt S, Preble E A. Gallium nitride and related materials: challenges in materials processing. Acta Materialia, 2003, 51(19):5961-5979
[3]Gu E, Howard H, Conneely A. Microfabrication in free-standing gallium nitride using UV laser micromachining. Applied Surface Science, 2006, 252(13):4897-4901
[4]Fewster P F, Andrew N L, Foxon C T. Microstructure and composition analysis of group III nitrides by X-ray scattering. Journal of Crystal Growth, 2001, 230(3-4):398-404
[5]杨红伟,闫发旺,章麒麟等. GaN的低压MOCVD生长模型.半导体情报, 2001, 6(38):52-54
[6]陈光华,邓金祥.新型电子薄膜材料.北京:化学工业出版社,2002, 241-253
[7]章其麟,孙文红,刘燕飞等. GaN材料生长研究.半导体情报,1997,5 (34):7-9
[8]Maruska H P, Tietjen.The preparation and properties of vapor deposited single-crystal-line GaN. J. Appl Phys Lett, 1969, 15:327-329
[9]Karpinski J, Porowski S. High Pressure Thermodynamics of GaN. J. Cryst Growth, 1984, 66: 11-14
[10]Amano H, Kitoh M, Hiramatsu K and Akasaki I. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation. Jpn. J. Appl. Phys. 1989, 28, L2112- 2114
[11]顾彪,王三胜,徐茵等. GaN基材料及其在短波光电器件领域的应用.高科技通讯,2002.3:104-110
[12]Khan M A, Chen Q, Yang J W, et al. Electronic devices based on GaN-AlGaN Material System. Inst. Phys. Conf. Ser, 1995, 142:985-990
[13]Gelmont B, Kim K, Shur M. Monte-carlo simulalion of electron-transport in gallium nitride,J. Appl. Phys, 1993, 74(3),1818-1821.
[14]雷本亮.氢化物气相外延生长GaN材料及其物相分析:[博士学位论文].上海:中国科学院上海微系统与信息技术研究所,2006
[15]Nakamura S, Senoh M, Mukai T. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers. Jpn.J. Appl.Phys, 1991,30, L1708-1711
[16]Lagerstedt O, Monemar B. Luminescence in epitaxial GaN:Cd. J. Appl. Phys, 1974, 45(5): 2266-2272
[17]Pankove J I. Temperature dependence of emission efficiency and lasing threshold in laser diodes, IEEE J. Quantum Electron. , 1968, QE-4: 119-125
[18]Johnson W C, Parsons J B, Crew. M C. Nitrogen Compounds of Gallium. III, J. Phys. Chem. Part, 1932, 2 (36): 2651-2655
[19]Rakesh B J, Herbert P M. How it really happened: The history of p-type doping of gallium nitride. Physica Status Solidi (a), 2007, 204(6):1970-1976
[20]Amano H, Sawaki N, Akasaki I, et al. Metalorganic phase epitaxial growth of a high quality GaN film using an AlN bufferlayers.Appl. Phys. Lett.,1986,48:353-358
[21]Nakamura S, Sources of inhomogeneity and their effects on the asymmetry of the ferromagnetic resonance lineshapes of signle crystal nickel films. Jpn. J. Appl. Phys., 1991, 30:1705-1709
[22]Amano H, Kito M, Hiramatsu K, et al. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI). Jpn. J. Appl. Phy.s., 1989, 28: L2112-2114
[23]Nakamura S, Mukai T, Senoh M, et al.Thermal annealing effects on P-Type Mg-doped GaN films. Jpn.J. Appl.Phy.s.,1992,31:L139-142
[24]Nakamura S, Iwasa N, Senoh M, et al. Hole Compensation Mechanism of P-Type GaN Films. Jpn. J. Appl. Phys. 1992, 35: 1258-1262
[25]Nakamura S, Senoh M, Iwasa N, et al. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes. Jpn. J. Appl. Phys. 1995, Part2, 34: L1332-1335
[26]Nam O H, Bermser M D, Zheleva T S, et al. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy, Appl. Phys. Lett.1997, 71:2638-2640
[27]郎佳红,顾彪,徐茵,等. GaN基材料半导体激光器综述.激光技术, 2003,27(4):321-327
[28]秦福文,顾彪,徐茵,等.蓝宝石衬底的ECR等离子体清洗与氮化的RHEED研究.半导体学报,2003, 24(6):668-672
[29]Zhang W, Roesel S, veit P, et al. Workshop on Nitride Semicond. In: IPAP Conf. Series 1, 2000, 27
[30]Zhang X, Dapkus P D, Rich D H. Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation. Appl. Phys. Lett, 2000, 77:1496-1498
[31]Zhang W, Meyer B K. Growth of GaN quasi-substrates by hydride vapor phase epitaxy. Phys. Stat. Sol. (c), 2003:1571-1576
[32]Hironori K, Ryuji K, Kentaro O, et al. Nitrogen supply rate dependence of InGaN growth properties, by RF-MBE. Journal of Crystal Growth, 2007, 305:12-18
[33]Usher B F, Warminski T, Dieing T, et al. Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsN. J.Surface Science, 2007, 601:5800-5802
[34]Nikishin S A, Seryogin G A, Temkin H, et al. Gas source molecular beam epitaxy of cubic GaN/GaAs (0 0 1) using hydrazine. J. Cryst Growth, 1997, 139:175-176
[35]Yoshida S. Photoluminescence measurement of InGaN and GaN grown by a gas-source molecular-beam epitaxy method, J. Appl. Phys., 1997, 81(12):7966-7969
[36]Suntola, Antson J. Methods for producing compound thin films. U.S. Pat., 1977,405-430
[37]谢孟贤,刘诺.化合物半导体材料与器件.成都:电子科技大学出版社,2000,9:195-198
[38]Amano H, Sawaki N, Akasaki I, et al. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer, Appl. Phys. Lett., 1986, 48: 353-355
[39]毛祥军,杨志坚,张国义,等.在ZnO/Al2O3衬底上生长高质量GaN单晶薄膜.高技术通讯,1999,3: 35-38
[40]王晓晖,刘祥林,汪度,等.用于GaN生长的蓝宝石衬底化学抛光研究.半导体学报,1997, 18(11):867-871
[41]Manasevit H M, Erdmann F M, Simpson W I. The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substrates. Journal of Crystal Growth, 1972, (13-14): 306-314
[42]Guha S, Bojarczuk N A. Ultraviolet and violet GaN light emitting diodes on silicon. Appl.Phys.Lett, 1998, 72(4):415-417
[43]王军喜,王晓亮,刘宏新,等. Si衬底和Si-SiO2-Si柔性衬底上的GaN生长.半导体学报, 2004,25(6):678-682
[44]张荣,顾书林,沈波,等.GaN大失配异质外延技术.铁道师院学报,2002,19(1):1-3
[45]Katz A, Dautremont-Smith W C. Stress measurements of Pt/Ti/InP and Pt/Ti/Si02/InP systems: In situ measurements through sintering and after rapid thermal processing[J]. J. Appl. Phys., 1990, 67: 6237-6246.
[46]Krooshof G J P, Habraken F H P M, Van der weg W F, et al. Study of the rapid thermal nitridation and silicidation of Ti using elastic recoil detection. I. Ti on Si[J]. J. Appl. Phys., 1988, 63: 5104-5109.
[47]Michael P. S, Jorge J. Santiago. Effects of rapid thermal processing on the formation of uniform tetragonal tungsten disilicide films on Si(100) substrate[J] . J. Appl. Phys., 1988, 63: 525-529.
[48]Hu G Q, Kong X, Wan L, et al. Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition. J. Cryst. Growth. 2003, 256: 416-419
[49]Barfels T, Fitting H J, Jansons J, et al. Structure and luminescence of GaN layers. Appl. Surf. Sci. 2001, 179: 191-194
[50]Jin H B, Scott A U, Wilson H. Growth of hexagonal GaN thin films on Si(111) with cubic SiC buffer layers. J. Cryst. Growth. 1998, 183: 189-190
[51]Sun W H, Wang L S, Chua S J, et al. Local vibrational modes in Gamma-irradiated GaN grown by metal-organic chemical vapor deposition. Materi. Sci. Semicond. Process. 2001, 4: 559-593
[52]Duboz J Y. GaN as Seen by the Industry [J]. Phys. S tat. Sol. (A), 1999, 176 (1): 5-8
[53]Monemar B, Pozina G. GroupⅢ2 Nitride Based Heter o and Quantum Structures [J]. Progr. Quantum Electron, 2000, 24 (6): 239-242
[54]Nakamuras S. The Roles of Structural I mperfections in InGaN2 Based Diodes, Blue2 Light2 Emitting Diodes and Laser. [J]. Science, 1998, 281(5379): 956-960
[55]Kung P, SaxlerA, Zhang X, et al. High Quality Al N and GaN Ep ilayers Grown on (0001) Sapphire, (100) , and (111) Silicon Substrates[J]. Appl . Phys. Lett. , 1995, 66 (22): 2958-2961
[56]Manasevit H M. The use of metal-organics in the preparation of semiconductor materials. J. Electrochem. Soc., 1969, 116: 1725-1728
[57]Manasevit H M. The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substrates, J. Cryst. Growth, 1972, 13: 306-314
[58]Feng Z C, Yang T R., Hou Y T. Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates. Mater. Sci. Semicond. Process. 2001, 4: 571-574
[59]Ng S S, Hassan Z, Hashim M R, et al. Crystallinity studies of GaN/Si films grown at different temperatures by infrared reflectance spectroscopy. Mater. Chem. Phys. 2005, 91: 404-408
[60]Pearton S J, Abernathy C R, Wilson R G,et al. Effects of hydrogen implantation into GaN. Nucl. Instrum. Methods Phys. Res. B. 1999, 147: 171-174
[61]Kong M Y, Zhang J P, Wang X L, et al. Hydrogen behavior in GaN epilayers grown by NH3-MBE. J. Cryst. Growth. 2001, 371: 227–228
[62]Roy R K, Pal A K. Synthesis of gallium nitride films by a novel electrodeposition route. Mater. Lett. 2005, 59: 2204-2207
[63]朱华超,满宝元,庄惠照,等. SiC缓冲层用于改善硅基氮化镓薄膜的质量研究.功能材料.2008.39(2):247-249
[64]徐波,余庆选,吴气虹,等.应力和掺杂对Mg:GaN薄膜光致发光光谱影响的研究.物理学报,2004,53(1):205-209
[65]Arguello C A, Rousseau D L, Porto S P S. First Order Raman Effect in Wurtzite-Type Crystals. Phys.Rev, 1968, 181: 1351-1354
[66]Ye J.D, Gu S.L, Wang L Z etal. Optical Characteristics of C-Doped GaN. [J].Chinese Journal of Semiconductors. 2003,23: 717-721
[67]Vajpeyi A P, Tripathy S, Chua S J, et al. Investigation of optical properties of nanoporous GaN films. Physica E, 2005, 28:141-149
[68]王瑞敏,陈光德, Lin J Y,等. MOCVD生长的GaN和GaN:Mg薄膜的拉曼散射.发光学报, 2005, 26: 229 -232
[69]Kisielowski C, Kruger J, Ruvimov S, et al. Strain-related phenomena in GaN thin films. Phys. Rev. B, 1996, 54: 17745-17753
[70]Sui Y P, Yu G H,i Meng S,et al.Photoluminescence lines in unintentionally doped and Mg-doped GaN grown by plasma-assistedmolecular beam epitaxy [J].Chin. J. Lumin. 2006,27(6): 971-975
[71]邢艳辉,韩军,刘建平,等. p型氮化镓退火及发光二极管研究.固体电子学研究与进展.2007.27(2)186-189
[72]Han J,Baca A G,Shul R J,et al.Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor. Appl Phys Lett,1999,74(18):2702-2705
[73]Ren F,Han J,Hickman R,et al.GaN/AlGaN HBT fabrica-tion.Solid-State Electron,2000,44:239-242
[74]Sheu J K,Chi G C,Jou M J.Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85-N/GaN superlattice.IEEE Electron Device Lett,2001,22(4):161-164
[75]Jeon S R,Song Y H,Jang H J,et al.Lateral current spreadingin GaN-based light-emitting diodes utilizing tunnel contactjunctions.Appl Phys Lett,2001,78(21):3265-3269
[76]Sinha K, Mascarenhas A, Kurtz S R, et al.Determination of free carrier concentration in n-GaInP alloy by Raman scattering[J].J ApplPhys,1995,78:2515-2519.
[77]Duan C H, Qiu K, Li X H, et al. Effects of in situ Annealing on Optical and Structural Properties of GaN Epilayers Grown by HVPE. Journal of Semiconductors, 2008, 29(3):410-413
[78]Huang H Y. Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN:On the nature of yellow luminescence. Appl.Phys.Lett, 2002, 80:3349-3351
[79]Li X, Bohn P W, Coleman J J. Impurity states are the origin of yellow-band emission in GaN structuresproduced by epitaxial lateral overgrowth. Appl Phys Lett, 1999, 75 (26):4049-4051
[80]Ponce F A, Bour D P, Gotz W, et al. Spatial distribution of the luminescence in GaN thin films. Appl Phys Lett, 1996, 68(1):57-59
[81]Qiu X G, Segawa. Influence of threading dislocations on the near-bandedge photoluminescence ofwurtzite GaN thin films on SiC substrates. Appl Phys Lett, 2000, 77(9): 1316-1318
[82]Kerller S, Keller B P, Wu Y F, et al. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition. Appl. Phys. Lett., 1996, 68(11):1525-1527
[83]Kishino K, Kikuchi A. Polarity control and threading dislocation reduction in RF-MBE grown GaN on sapphire substrates. Chin.J.Lumin., 2001,22:319-323
[84]Heying B, Wu X H, Keller S, et al. Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films. Appl.Phys.Lett., 1996, 68(5):643-645
[2]Davis R F, Einfeldt S, Preble E A. Gallium nitride and related materials: challenges in materials processing. Acta Materialia, 2003, 51(19):5961-5979
[3]Gu E, Howard H, Conneely A. Microfabrication in free-standing gallium nitride using UV laser micromachining. Applied Surface Science, 2006, 252(13):4897-4901
[4]Fewster P F, Andrew N L, Foxon C T. Microstructure and composition analysis of group III nitrides by X-ray scattering. Journal of Crystal Growth, 2001, 230(3-4):398-404
[5]杨红伟,闫发旺,章麒麟等. GaN的低压MOCVD生长模型.半导体情报, 2001, 6(38):52-54
[6]陈光华,邓金祥.新型电子薄膜材料.北京:化学工业出版社,2002, 241-253
[7]章其麟,孙文红,刘燕飞等. GaN材料生长研究.半导体情报,1997,5 (34):7-9
[8]Maruska H P, Tietjen.The preparation and properties of vapor deposited single-crystal-line GaN. J. Appl Phys Lett, 1969, 15:327-329
[9]Karpinski J, Porowski S. High Pressure Thermodynamics of GaN. J. Cryst Growth, 1984, 66: 11-14
[10]Amano H, Kitoh M, Hiramatsu K and Akasaki I. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation. Jpn. J. Appl. Phys. 1989, 28, L2112- 2114
[11]顾彪,王三胜,徐茵等. GaN基材料及其在短波光电器件领域的应用.高科技通讯,2002.3:104-110
[12]Khan M A, Chen Q, Yang J W, et al. Electronic devices based on GaN-AlGaN Material System. Inst. Phys. Conf. Ser, 1995, 142:985-990
[13]Gelmont B, Kim K, Shur M. Monte-carlo simulalion of electron-transport in gallium nitride,J. Appl. Phys, 1993, 74(3),1818-1821.
[14]雷本亮.氢化物气相外延生长GaN材料及其物相分析:[博士学位论文].上海:中国科学院上海微系统与信息技术研究所,2006
[15]Nakamura S, Senoh M, Mukai T. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers. Jpn.J. Appl.Phys, 1991,30, L1708-1711
[16]Lagerstedt O, Monemar B. Luminescence in epitaxial GaN:Cd. J. Appl. Phys, 1974, 45(5): 2266-2272
[17]Pankove J I. Temperature dependence of emission efficiency and lasing threshold in laser diodes, IEEE J. Quantum Electron. , 1968, QE-4: 119-125
[18]Johnson W C, Parsons J B, Crew. M C. Nitrogen Compounds of Gallium. III, J. Phys. Chem. Part, 1932, 2 (36): 2651-2655
[19]Rakesh B J, Herbert P M. How it really happened: The history of p-type doping of gallium nitride. Physica Status Solidi (a), 2007, 204(6):1970-1976
[20]Amano H, Sawaki N, Akasaki I, et al. Metalorganic phase epitaxial growth of a high quality GaN film using an AlN bufferlayers.Appl. Phys. Lett.,1986,48:353-358
[21]Nakamura S, Sources of inhomogeneity and their effects on the asymmetry of the ferromagnetic resonance lineshapes of signle crystal nickel films. Jpn. J. Appl. Phys., 1991, 30:1705-1709
[22]Amano H, Kito M, Hiramatsu K, et al. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI). Jpn. J. Appl. Phy.s., 1989, 28: L2112-2114
[23]Nakamura S, Mukai T, Senoh M, et al.Thermal annealing effects on P-Type Mg-doped GaN films. Jpn.J. Appl.Phy.s.,1992,31:L139-142
[24]Nakamura S, Iwasa N, Senoh M, et al. Hole Compensation Mechanism of P-Type GaN Films. Jpn. J. Appl. Phys. 1992, 35: 1258-1262
[25]Nakamura S, Senoh M, Iwasa N, et al. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes. Jpn. J. Appl. Phys. 1995, Part2, 34: L1332-1335
[26]Nam O H, Bermser M D, Zheleva T S, et al. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy, Appl. Phys. Lett.1997, 71:2638-2640
[27]郎佳红,顾彪,徐茵,等. GaN基材料半导体激光器综述.激光技术, 2003,27(4):321-327
[28]秦福文,顾彪,徐茵,等.蓝宝石衬底的ECR等离子体清洗与氮化的RHEED研究.半导体学报,2003, 24(6):668-672
[29]Zhang W, Roesel S, veit P, et al. Workshop on Nitride Semicond. In: IPAP Conf. Series 1, 2000, 27
[30]Zhang X, Dapkus P D, Rich D H. Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation. Appl. Phys. Lett, 2000, 77:1496-1498
[31]Zhang W, Meyer B K. Growth of GaN quasi-substrates by hydride vapor phase epitaxy. Phys. Stat. Sol. (c), 2003:1571-1576
[32]Hironori K, Ryuji K, Kentaro O, et al. Nitrogen supply rate dependence of InGaN growth properties, by RF-MBE. Journal of Crystal Growth, 2007, 305:12-18
[33]Usher B F, Warminski T, Dieing T, et al. Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsN. J.Surface Science, 2007, 601:5800-5802
[34]Nikishin S A, Seryogin G A, Temkin H, et al. Gas source molecular beam epitaxy of cubic GaN/GaAs (0 0 1) using hydrazine. J. Cryst Growth, 1997, 139:175-176
[35]Yoshida S. Photoluminescence measurement of InGaN and GaN grown by a gas-source molecular-beam epitaxy method, J. Appl. Phys., 1997, 81(12):7966-7969
[36]Suntola, Antson J. Methods for producing compound thin films. U.S. Pat., 1977,405-430
[37]谢孟贤,刘诺.化合物半导体材料与器件.成都:电子科技大学出版社,2000,9:195-198
[38]Amano H, Sawaki N, Akasaki I, et al. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer, Appl. Phys. Lett., 1986, 48: 353-355
[39]毛祥军,杨志坚,张国义,等.在ZnO/Al2O3衬底上生长高质量GaN单晶薄膜.高技术通讯,1999,3: 35-38
[40]王晓晖,刘祥林,汪度,等.用于GaN生长的蓝宝石衬底化学抛光研究.半导体学报,1997, 18(11):867-871
[41]Manasevit H M, Erdmann F M, Simpson W I. The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substrates. Journal of Crystal Growth, 1972, (13-14): 306-314
[42]Guha S, Bojarczuk N A. Ultraviolet and violet GaN light emitting diodes on silicon. Appl.Phys.Lett, 1998, 72(4):415-417
[43]王军喜,王晓亮,刘宏新,等. Si衬底和Si-SiO2-Si柔性衬底上的GaN生长.半导体学报, 2004,25(6):678-682
[44]张荣,顾书林,沈波,等.GaN大失配异质外延技术.铁道师院学报,2002,19(1):1-3
[45]Katz A, Dautremont-Smith W C. Stress measurements of Pt/Ti/InP and Pt/Ti/Si02/InP systems: In situ measurements through sintering and after rapid thermal processing[J]. J. Appl. Phys., 1990, 67: 6237-6246.
[46]Krooshof G J P, Habraken F H P M, Van der weg W F, et al. Study of the rapid thermal nitridation and silicidation of Ti using elastic recoil detection. I. Ti on Si[J]. J. Appl. Phys., 1988, 63: 5104-5109.
[47]Michael P. S, Jorge J. Santiago. Effects of rapid thermal processing on the formation of uniform tetragonal tungsten disilicide films on Si(100) substrate[J] . J. Appl. Phys., 1988, 63: 525-529.
[48]Hu G Q, Kong X, Wan L, et al. Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition. J. Cryst. Growth. 2003, 256: 416-419
[49]Barfels T, Fitting H J, Jansons J, et al. Structure and luminescence of GaN layers. Appl. Surf. Sci. 2001, 179: 191-194
[50]Jin H B, Scott A U, Wilson H. Growth of hexagonal GaN thin films on Si(111) with cubic SiC buffer layers. J. Cryst. Growth. 1998, 183: 189-190
[51]Sun W H, Wang L S, Chua S J, et al. Local vibrational modes in Gamma-irradiated GaN grown by metal-organic chemical vapor deposition. Materi. Sci. Semicond. Process. 2001, 4: 559-593
[52]Duboz J Y. GaN as Seen by the Industry [J]. Phys. S tat. Sol. (A), 1999, 176 (1): 5-8
[53]Monemar B, Pozina G. GroupⅢ2 Nitride Based Heter o and Quantum Structures [J]. Progr. Quantum Electron, 2000, 24 (6): 239-242
[54]Nakamuras S. The Roles of Structural I mperfections in InGaN2 Based Diodes, Blue2 Light2 Emitting Diodes and Laser. [J]. Science, 1998, 281(5379): 956-960
[55]Kung P, SaxlerA, Zhang X, et al. High Quality Al N and GaN Ep ilayers Grown on (0001) Sapphire, (100) , and (111) Silicon Substrates[J]. Appl . Phys. Lett. , 1995, 66 (22): 2958-2961
[56]Manasevit H M. The use of metal-organics in the preparation of semiconductor materials. J. Electrochem. Soc., 1969, 116: 1725-1728
[57]Manasevit H M. The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substrates, J. Cryst. Growth, 1972, 13: 306-314
[58]Feng Z C, Yang T R., Hou Y T. Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates. Mater. Sci. Semicond. Process. 2001, 4: 571-574
[59]Ng S S, Hassan Z, Hashim M R, et al. Crystallinity studies of GaN/Si films grown at different temperatures by infrared reflectance spectroscopy. Mater. Chem. Phys. 2005, 91: 404-408
[60]Pearton S J, Abernathy C R, Wilson R G,et al. Effects of hydrogen implantation into GaN. Nucl. Instrum. Methods Phys. Res. B. 1999, 147: 171-174
[61]Kong M Y, Zhang J P, Wang X L, et al. Hydrogen behavior in GaN epilayers grown by NH3-MBE. J. Cryst. Growth. 2001, 371: 227–228
[62]Roy R K, Pal A K. Synthesis of gallium nitride films by a novel electrodeposition route. Mater. Lett. 2005, 59: 2204-2207
[63]朱华超,满宝元,庄惠照,等. SiC缓冲层用于改善硅基氮化镓薄膜的质量研究.功能材料.2008.39(2):247-249
[64]徐波,余庆选,吴气虹,等.应力和掺杂对Mg:GaN薄膜光致发光光谱影响的研究.物理学报,2004,53(1):205-209
[65]Arguello C A, Rousseau D L, Porto S P S. First Order Raman Effect in Wurtzite-Type Crystals. Phys.Rev, 1968, 181: 1351-1354
[66]Ye J.D, Gu S.L, Wang L Z etal. Optical Characteristics of C-Doped GaN. [J].Chinese Journal of Semiconductors. 2003,23: 717-721
[67]Vajpeyi A P, Tripathy S, Chua S J, et al. Investigation of optical properties of nanoporous GaN films. Physica E, 2005, 28:141-149
[68]王瑞敏,陈光德, Lin J Y,等. MOCVD生长的GaN和GaN:Mg薄膜的拉曼散射.发光学报, 2005, 26: 229 -232
[69]Kisielowski C, Kruger J, Ruvimov S, et al. Strain-related phenomena in GaN thin films. Phys. Rev. B, 1996, 54: 17745-17753
[70]Sui Y P, Yu G H,i Meng S,et al.Photoluminescence lines in unintentionally doped and Mg-doped GaN grown by plasma-assistedmolecular beam epitaxy [J].Chin. J. Lumin. 2006,27(6): 971-975
[71]邢艳辉,韩军,刘建平,等. p型氮化镓退火及发光二极管研究.固体电子学研究与进展.2007.27(2)186-189
[72]Han J,Baca A G,Shul R J,et al.Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor. Appl Phys Lett,1999,74(18):2702-2705
[73]Ren F,Han J,Hickman R,et al.GaN/AlGaN HBT fabrica-tion.Solid-State Electron,2000,44:239-242
[74]Sheu J K,Chi G C,Jou M J.Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85-N/GaN superlattice.IEEE Electron Device Lett,2001,22(4):161-164
[75]Jeon S R,Song Y H,Jang H J,et al.Lateral current spreadingin GaN-based light-emitting diodes utilizing tunnel contactjunctions.Appl Phys Lett,2001,78(21):3265-3269
[76]Sinha K, Mascarenhas A, Kurtz S R, et al.Determination of free carrier concentration in n-GaInP alloy by Raman scattering[J].J ApplPhys,1995,78:2515-2519.
[77]Duan C H, Qiu K, Li X H, et al. Effects of in situ Annealing on Optical and Structural Properties of GaN Epilayers Grown by HVPE. Journal of Semiconductors, 2008, 29(3):410-413
[78]Huang H Y. Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN:On the nature of yellow luminescence. Appl.Phys.Lett, 2002, 80:3349-3351
[79]Li X, Bohn P W, Coleman J J. Impurity states are the origin of yellow-band emission in GaN structuresproduced by epitaxial lateral overgrowth. Appl Phys Lett, 1999, 75 (26):4049-4051
[80]Ponce F A, Bour D P, Gotz W, et al. Spatial distribution of the luminescence in GaN thin films. Appl Phys Lett, 1996, 68(1):57-59
[81]Qiu X G, Segawa. Influence of threading dislocations on the near-bandedge photoluminescence ofwurtzite GaN thin films on SiC substrates. Appl Phys Lett, 2000, 77(9): 1316-1318
[82]Kerller S, Keller B P, Wu Y F, et al. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition. Appl. Phys. Lett., 1996, 68(11):1525-1527
[83]Kishino K, Kikuchi A. Polarity control and threading dislocation reduction in RF-MBE grown GaN on sapphire substrates. Chin.J.Lumin., 2001,22:319-323
[84]Heying B, Wu X H, Keller S, et al. Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films. Appl.Phys.Lett., 1996, 68(5):643-645