高温压力传感器的研制与计算机模拟
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摘要
高温压力传感器因其特殊的应用环境而日益受到人们的重视。在石油，化工，冶金，航空航天等领域，对高温环境下的压力测试是必要的。多晶硅高温压力传感器和SOI高温压力传感器是目前传感器市场上，用于在高温压力测量领域中替代普通扩散硅压力传感器的理想产品。
本文论述了一种新型多晶硅-AlN薄膜高温压力传感器的研制，它综合考虑了多晶硅高温压力传感器和SOI高温压力传感器的优点，并结合了MEMS制作工艺技术。其要点是在力敏电阻条与硅弹性膜之间利用氮化铝进行绝缘隔离。氮化铝与硅的热膨胀系数接近，附着力高，耐击穿性好。又具有高化学稳定性，高热导率，对于压力传感器的电桥散热特别有利，可解决压力传感器启动时的零点时漂。由于无p－n结，力敏电阻无反向漏电，依此制造的压力传感器的特性好（零点电漂移及热漂移小、非线性小）。力敏电阻条由多晶硅构成。利用Al诱导退火能使溅射得到的非晶硅在600℃时转化成为多晶硅。利用湿法刻蚀电阻图形，并采用各向异性腐蚀技术制作硅杯，最后使用PbO-ZnO-B2O3低温玻璃封接技术进行封接。
多晶硅-AlN薄膜结构的压力传感器制作工艺与传统的CMOS制作工艺兼容，易于实现集成化。所以这是一种性能理想的高温压力传感器。
此外，利用工程上较为流行的软件ANSYS对高温压力传感器进行了模拟，得出其在高温环境下工作时的温度分布情况。比较了AlN, 2 SiO与2 3 Al O分别作为绝缘散热层时模型的温度分布，并且比较了散热层不同厚度时力敏电阻中心点的温度。
Pressure sensor used for high temperature is regarded highly by people for its specialapplications. It is necessary for us to make a pressure measure in high temperature environmentsuch as the field of petroleum, chemical industry, aeronautics and astronautics . Polysilicon hightemperature pressure sensor and SOI high temperature pressure sensor are the ideal product forreplacing the ordinary diffusion silicon pressure sensor in the high temperature pr essure measureat present market.
A polysilicon-AlN film pressure sensor used for high temperature is developed in this paper.It is designed by the characteristic of polysilicon high temperature pressure sensor, SOI hightemperature pressure sensor as wel l as MEMS technology. The essential is using AlN film toseparate piezo-resistors from silicon elastic film. The expansion coefficient of AlN is close tothat of silicon with a good stiffness and high break -down voltage as well as good chemical steady.It is benefit to thermal dissipation for bridge with its high thermal conductivity. That can solvethe problem of drift of offset with time when starting and powering sensors. The properties(electric and thermal drift for offset, non -linearity) of pressure sensors fabricated by thesesubstrates are particularly excellent. Piezo -resistors consist of nano-polycrystal silicon, which ismade from sputtering amorphous silicon by Al induced crystallization at temperature of 600℃.The silicon cup is prepared with anisotropyically etching the substrate and the resistance isprepared with plasma etching. Packaging of this device is also prepared by PbO -ZnO-B2O3process.
It is easy to realize the integration because the process of polysilicon-AlN thin film pressuresensor is compiled with the traditional CMOS process. So it is an ideal high temperature pressuresensor with good performance.
Also,the temperature distribution in the model was simulated essentially by using ANSYSsoftware, respectively comparing the temperature distribution among AlN, 2 SiO , 2 3 Al O as heatdispersion-layer, and the temperatures at resistor center for different thickness of these heatdispersion-layers .
本文论述了一种新型多晶硅-AlN薄膜高温压力传感器的研制，它综合考虑了多晶硅高温压力传感器和SOI高温压力传感器的优点，并结合了MEMS制作工艺技术。其要点是在力敏电阻条与硅弹性膜之间利用氮化铝进行绝缘隔离。氮化铝与硅的热膨胀系数接近，附着力高，耐击穿性好。又具有高化学稳定性，高热导率，对于压力传感器的电桥散热特别有利，可解决压力传感器启动时的零点时漂。由于无p－n结，力敏电阻无反向漏电，依此制造的压力传感器的特性好（零点电漂移及热漂移小、非线性小）。力敏电阻条由多晶硅构成。利用Al诱导退火能使溅射得到的非晶硅在600℃时转化成为多晶硅。利用湿法刻蚀电阻图形，并采用各向异性腐蚀技术制作硅杯，最后使用PbO-ZnO-B2O3低温玻璃封接技术进行封接。
多晶硅-AlN薄膜结构的压力传感器制作工艺与传统的CMOS制作工艺兼容，易于实现集成化。所以这是一种性能理想的高温压力传感器。
此外，利用工程上较为流行的软件ANSYS对高温压力传感器进行了模拟，得出其在高温环境下工作时的温度分布情况。比较了AlN, 2 SiO与2 3 Al O分别作为绝缘散热层时模型的温度分布，并且比较了散热层不同厚度时力敏电阻中心点的温度。
Pressure sensor used for high temperature is regarded highly by people for its specialapplications. It is necessary for us to make a pressure measure in high temperature environmentsuch as the field of petroleum, chemical industry, aeronautics and astronautics . Polysilicon hightemperature pressure sensor and SOI high temperature pressure sensor are the ideal product forreplacing the ordinary diffusion silicon pressure sensor in the high temperature pr essure measureat present market.
A polysilicon-AlN film pressure sensor used for high temperature is developed in this paper.It is designed by the characteristic of polysilicon high temperature pressure sensor, SOI hightemperature pressure sensor as wel l as MEMS technology. The essential is using AlN film toseparate piezo-resistors from silicon elastic film. The expansion coefficient of AlN is close tothat of silicon with a good stiffness and high break -down voltage as well as good chemical steady.It is benefit to thermal dissipation for bridge with its high thermal conductivity. That can solvethe problem of drift of offset with time when starting and powering sensors. The properties(electric and thermal drift for offset, non -linearity) of pressure sensors fabricated by thesesubstrates are particularly excellent. Piezo -resistors consist of nano-polycrystal silicon, which ismade from sputtering amorphous silicon by Al induced crystallization at temperature of 600℃.The silicon cup is prepared with anisotropyically etching the substrate and the resistance isprepared with plasma etching. Packaging of this device is also prepared by PbO -ZnO-B2O3process.
It is easy to realize the integration because the process of polysilicon-AlN thin film pressuresensor is compiled with the traditional CMOS process. So it is an ideal high temperature pressuresensor with good performance.
Also,the temperature distribution in the model was simulated essentially by using ANSYSsoftware, respectively comparing the temperature distribution among AlN, 2 SiO , 2 3 Al O as heatdispersion-layer, and the temperatures at resistor center for different thickness of these heatdispersion-layers .
引文
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[28] Menz.W. LIGA and related technologies industrial application. The 8 th international conference onsolid-state sensors and actuators and eurosensors.1995:552 -555
[29] 王力衡,黄运添,郑海涛.薄膜技术,[M].北京:清华大学出版社,1991.53-56
[30] 唐伟忠.薄膜材料制备原理、技术及应用,[M].北京:冶金工业出版社,1998. 59-62
[31] Backer W.Menz, W.Mohr.J. The LIGA technique and its potential for microsystems.IEEE Transactions onIndustrial Electronics.1995, 142(5):431-441
[32] 薄膜材料科学与技术－青年科学家论坛第44 次活动.学会月刊,2001,4：7-8
[33] 陈光华，邓金祥等.新型电子薄膜材料,[M].北京：化学工业出版社，2002.19-21
[34] M.Bao, L.Yu, Y.Wang. Micromechanicl Beam-diaphragm structure improves performances of pressuretransducers. Sensors and Actuators.A21 -23(1990).137-141
[35] 张为. SOI 高温压力传感器的研究 [博士论文] 天津大学 2002
[36] 唐伟忠.薄膜材料制备原理、技术及应用,[M].北京:冶金工业出版社,1998,107-116
[37] L. Francioso , D.S. Presicce , A.M. Taurino,etal. Automotive application of sol–gel TiO2 thin film-basedsensor for lambda measurement. Sensors and Actuators B, 95 (2003): 66-72
[38] 徐淑霞. 多晶硅高温压力传感器设计[硕士论文] 沈阳工业大学 2003
[39] 孙以材，刘玉岭，孟庆浩编著. 压力传感器的设计、制造与应用,[M]. 北京：冶金工业出版社.2000：63-66
[40] 李玉增. Ill-V 族氮化物半导体材料研究概述[J]. 稀有金属， 1997， 21（1）： 52-57
[41] Yasumi Koiayashi, Navki Tanaka, Hiroski0kanoetal. Characteristics of surface acoustic wave on AIN thinfilms[J]. J p n. J.App 1. Phys., 1995, 34(5B):2668-2673
[42] Wait Tracy, Clarke R Chris, Singh N B, et al. Physical vapor transport growth of large AlN crystals ,[J].Journal of Crystal Growth, 2003, 250(1): 107-112
[43] 张书玉. SOI 高温压力传感器的研究[硕士论文] 河北工业大学 2006
[44] 秦秋石等. 压力变送器用全焊接结构的扩散硅敏感元件的研制[J]，半导体技术，1991(1): 26-32
[45] SteinslandE, FinstadT, HanneborgA. Etch rates of (100),(111) and (110) single -crystal silicon in TMAHmeasured in situ by laser reflectance interferometry[J].Sensor and Actuators2000, A 86:73 -80
[46] 沈今楷，孙以材. 压力传感器芯片的低温玻璃封接[J]，传感器技术，1999(1):10-12
[47] 孙以材，沈今楷. 压力传感器芯片的低温玻璃封接[J]，电子器件，2000，18:36-42
[48] 国家自然基金委员会著[M]<半导体科学与技术>（自然科学学科发展战略调研报告），科学出版社（1995）
[49] 牟军. 半导体技术. 1994 ,4 (2) :23～26
[50] 孙以材，潘国锋等. Property revealing for silicon chip -bonding glass,[C], The 52nd ElectronicComponents and Technology conference , San Diego, California USA, 2002, May 28-31:1575-1580
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