新型功能光学薄膜的磁控溅工艺及物性研究
|
摘要
光学功能薄膜涉及到光电产业、国防、环境科学等众多领域,具有很强的应用背景。本文利用磁控溅射技术制备了几种新型光学功能薄膜,主要包括:SiO_x薄膜、YSZ耐高温光学薄膜、TiO_2光催化和自清洁功能薄膜。通过对材料的筛选,对薄膜材料微结构及性能的调控,以及对制备工艺的研究与优化,取得了一些具有实用价值的研究成果。文中还对影响光学薄膜性能的内在因素和作用机理进行了分析和讨论。
本论文的具体研究内容和主要结果如下:
1.利用反应磁控溅射技术制备了不同氧化程度的SiO_x薄膜,研究了不同温度下退火对其光学参数的影响。讨论了SiO_x材料体系在不同温度下退火后,薄膜的微结构与组成的演变过程,具体包括相分离引起的成分变化,退火对样品应力的释放和对缺陷的修复作用,以及不同氧化程度薄膜折射率的变化机理等。
2.针对光学薄膜在高温下的应用,研究了Nb_2O_5、Ta_2O_5等传统光学薄膜材料在高温下微结构及光学参数的劣化;提出了钇稳定氧化锆(YSZ)材料在耐高温光学薄膜领域的应用。从光学参数和微结构的稳定性等方面讨论了YSZ薄膜材料的耐温性能及机理。所获得的YSZ/SiO_2多层膜光学器件在800℃下光学性能无明显退化。该结果拓展了光学薄膜在高温条件下的应用前景。
3.发现了ZnO前驱层对TiO_2薄膜的结晶增强的效应,并研究了该增强效应的机理。提出了利用ZnO前驱层来调控TiO_2薄膜的结晶度和表面粗糙度的方法,研究了TiO_2/ZnO薄膜的光催化和自清洁性能及影响因素。利用磁控溅射技术获得的TiO_2/ZnO双层结构薄膜表现出比单层TiO_2薄膜更加优越的光催化活性和亲水性。这一结果具有很好的工业应用前景。
Optical thin films have been widely applied in optical communications, environment sciences,and military usages.In this work,a few novel optical functional thin films,including SiO_x thin films,high temperature optical thin films, and self-cleaning thin films,were prepared by magnetron sputtering technique.Some results valuable for industrial applications were obtained by optimizing the materials, micro-structure and compositions,as well as the deposition processes.The factors and intrinsic mechanisms which may affect the properties of these functional films were also discussed.
Based on the experimental studies and analyses,we have the following conclusions:
1.SiO_x films with different oxygen contents were prepared by reactive magnetron sputtering.The dependences of optical properties on the annealing temperature were studied.Influences of the annealing temperatures on the microstructure and compositional changes were studied.The phase separation,stress relaxation and healing effect,and the mechanisms of the optical refractive index changes of the SiO_x films were discussed.
2.In order to explore materials for high temperature applications,the deterioration behaviors of the traditional optical materials,such as Nb_2O_5 and Ta_2O_5,during annealing were studied.We found that the Yttria-stabilized Zirconia(YSZ) material can be used as an optical material and have excellent thermal stability. The optical properties and micro-structures of YSZ films were analyzed,and the intrinsic mechanisms of the thermal stability were discussed.The optical properties of the obtained YSZ/SiO_2 multilayer films were stable at temperatures up to 800℃.This work extended the application of optical films to the high temperature area.
3.ZnO buff layer was found to have a crystallinity enhancement affect to the TiO_2 layer,the intrinsic mechanism was discussed.It is suggested that a ZnO under-layer can be used for tailoring the microstructure and surface morphology of TiO_2 films.The photo-catalysis,self-cleaning property and the factor affecting the properties of the TiO_2/ZnO double layer films were studied.It was found that the double layer films show better photo-catalysis and self-cleaning properties than TiO_2 single layer films.This method has a promising application value in producing TiO_2 self-clean thin films.
本论文的具体研究内容和主要结果如下:
1.利用反应磁控溅射技术制备了不同氧化程度的SiO_x薄膜,研究了不同温度下退火对其光学参数的影响。讨论了SiO_x材料体系在不同温度下退火后,薄膜的微结构与组成的演变过程,具体包括相分离引起的成分变化,退火对样品应力的释放和对缺陷的修复作用,以及不同氧化程度薄膜折射率的变化机理等。
2.针对光学薄膜在高温下的应用,研究了Nb_2O_5、Ta_2O_5等传统光学薄膜材料在高温下微结构及光学参数的劣化;提出了钇稳定氧化锆(YSZ)材料在耐高温光学薄膜领域的应用。从光学参数和微结构的稳定性等方面讨论了YSZ薄膜材料的耐温性能及机理。所获得的YSZ/SiO_2多层膜光学器件在800℃下光学性能无明显退化。该结果拓展了光学薄膜在高温条件下的应用前景。
3.发现了ZnO前驱层对TiO_2薄膜的结晶增强的效应,并研究了该增强效应的机理。提出了利用ZnO前驱层来调控TiO_2薄膜的结晶度和表面粗糙度的方法,研究了TiO_2/ZnO薄膜的光催化和自清洁性能及影响因素。利用磁控溅射技术获得的TiO_2/ZnO双层结构薄膜表现出比单层TiO_2薄膜更加优越的光催化活性和亲水性。这一结果具有很好的工业应用前景。
Optical thin films have been widely applied in optical communications, environment sciences,and military usages.In this work,a few novel optical functional thin films,including SiO_x thin films,high temperature optical thin films, and self-cleaning thin films,were prepared by magnetron sputtering technique.Some results valuable for industrial applications were obtained by optimizing the materials, micro-structure and compositions,as well as the deposition processes.The factors and intrinsic mechanisms which may affect the properties of these functional films were also discussed.
Based on the experimental studies and analyses,we have the following conclusions:
1.SiO_x films with different oxygen contents were prepared by reactive magnetron sputtering.The dependences of optical properties on the annealing temperature were studied.Influences of the annealing temperatures on the microstructure and compositional changes were studied.The phase separation,stress relaxation and healing effect,and the mechanisms of the optical refractive index changes of the SiO_x films were discussed.
2.In order to explore materials for high temperature applications,the deterioration behaviors of the traditional optical materials,such as Nb_2O_5 and Ta_2O_5,during annealing were studied.We found that the Yttria-stabilized Zirconia(YSZ) material can be used as an optical material and have excellent thermal stability. The optical properties and micro-structures of YSZ films were analyzed,and the intrinsic mechanisms of the thermal stability were discussed.The optical properties of the obtained YSZ/SiO_2 multilayer films were stable at temperatures up to 800℃.This work extended the application of optical films to the high temperature area.
3.ZnO buff layer was found to have a crystallinity enhancement affect to the TiO_2 layer,the intrinsic mechanism was discussed.It is suggested that a ZnO under-layer can be used for tailoring the microstructure and surface morphology of TiO_2 films.The photo-catalysis,self-cleaning property and the factor affecting the properties of the TiO_2/ZnO double layer films were studied.It was found that the double layer films show better photo-catalysis and self-cleaning properties than TiO_2 single layer films.This method has a promising application value in producing TiO_2 self-clean thin films.
引文
1.H.A.Macleod,Thin-Film Optical Filters,Third ed.Institute of Physics Publishing,London,2001.
2.麦克劳德著,周九林,尹树百译,光学薄膜技术,北京:国防工业出版社,1974.
3.唐晋发,顾培夫编,薄膜光学与技术,北京:机械工业出版社,1989.
4.顾培夫,薄膜技术,浙江:浙江大学出版社,1990.
5.赖发春,中国科学技术大学博士学位论文,2005.5.
6.H.R.Philipp,J.Phys.Chem.Solids 32(1971) 1935.
7.F.C.Lai et.al.,CHINESE OPTICS LETTERS 3,8(2005) 490-493
8 "Handbook of Plasma Processing Technology:Fundamentals,Etching,Deposition,and Surface Interactions",S.M.Rossnagel,J.J.Cuomo,W.D.Westwood,Eds.,Noyes Publications,Park Ridge 1990.
9.A.M.Wro'bel,M.R.Wertheimer,"Plasma-Polymerized Organosilicones and Organometalics",in:Plasma Deposition,Treatment,and Etching of Polymers,R.d'Agostino,Ed.,Academic Press,Boston 1990,163.
10.A.Gr(u|")niger,"Deposition of SiO_x Diffusion Barriers on Flexible Packaging Materials by Plasma Enhanced Chemical Vapor Deposition",Thesis No.15684,E.T.H.Zurich(2004).
11.J.Pulpytel,F.Arefi-Khonsari,W.Morscheidt,J.Phys.D:Appl.Phys.38(2005) 1.
12.K.S.Chen,N.Inagaki,K.Katsuura,J.Appl.Polym.Sci.27(1982) 4655.
13.N.Schwarzer,Surf.Coat.Technol.133(2000) 397.
14.H.Yoda,K.Shiraishi,Y.J.Hiratani,O.Hanaizumi,Appl.Opt.43,17(2004)3548-3554
15.Z.M.Jiang et.al.,Appl.Phys.Lett.79(2001) 3395-3397
16.Q.M.Song et.al.,J.Vac.Sci.Technol.26(2),2008 265-269
17.宋秋明,黄烽,李明,谢斌,王海千,姜友松,宋亦周,“反应磁控溅射制备渐变折射率SiO_x外rugate滤光片”,《中国激光》,(2009)In-press
18.M.Yamada,Y.Ohmori,K.Takada,M.Kobayashi,Appl.Opt.30,6(1991)682-688
19.L.I.Epstein,J.Opt.Soc.Am,42,806-810,1952.
20.P.H.Berning,J.Opt.Soc.Am,52,431-436,1962.
21.J.A.Dobrowolski,S.H.C.Piotrowski,Appl.Opt,21,1512-1521,1981
22.J.Allen,B.Herrington,Proc.SPIE.2046,126-131,1993.
23.W.J.Gunning,R.L.Hall,F.J.Woodberry,W.H.Southwell,N.Gluck,Appl.Opt.,28,2945-2948,1989.
24.C.C.Lee,C.J.Tang,J.Y.Wu,Appl.Opt,45,1333-1337,2006.
25.Q.Tang,H.Matsuda,K.Kikuchi and S.Ogura,J.Vac.Sci.Technol.A,16,3384-3388,1998.
26.X.R.Wang,H.Masumoto,Y.Someno and T.Hirai,Appl.Phys.Lett,72 3264-3266,1998
27.H.Bartzsch,S.Lange,P.Frach,and K.Goedicke,Surf & Coat Technol,180-181,616-620,2004.
28.H.Yoda,D.Tanaka,O.Hanaizumi,Y.Kogami,K.Shiraishi,Appl.Opt.,29 45,184-190,2006.
30.E.P.Donovan,D.Van Vechten,A.D.F.Kahn,C.A.Carosella,G.K.Hubler,Appl.Opt.28,2940-2944,1989.
31.P.L.Swart,P.V.Bulkin,B.M.Lacquet,Opt.Eng,35,1214-1219,1997.
32.P.L.Swart,B.M.Lacquet,A.A.Chtcherbakov,P.V.Bulkin,J.Vac.Sci.Technol.A,18,74-78,2000.
33.J.Y.Song,T.Sakurai,Vacuum 74 (2004)409-415
34.W.E.Johnson,R.L.Crane,Proc.SPIE 2046,88-108,1993.
35.N.M.Ravindra etal.,J.Appl.Phys.60 (1986)1139-1146
36.K.L.Chopra,S.Major,D.K.Pandya,Thin Solid films,102,1-46,1983.
37.T.J.Courts,J.D.Perkins,D.S.Ginley,T.O.Mason,in the 195th Meeting of the Electrochemical Society,Seattle,Washington,1999.
38.J.Robertson,J.Non-Cryst.Sol,354,2791-2795,2008.
39.Y.Chen,et al.J.Appl.Phys.96,(2004)3180-3186
40.L.X.Yi,etal.Appl.Phys.Lett.81 (2002)4248-4250
41.M.Zacharias et.al.Appl.Phys.Lett.80 (2002)661-663
42.K.Sato et.al.,Thin Solid Films 515 (2006)778-781
433.Y.Q.Wang et.al.J.Crys.Growth 294 (2006)486-489
44.V.M.Burlakov.et.al.Phys.Rev.Let.93 (2004)135501
45.I.P.Lisovskyy et.al.Semicon.,37 (2003)97-102
46.F.O'Sullivan,J.Appl.Phys.97,033529 2005
47.T.J.Haiyi Sun,X.X.Li,C.B.Li,D.H.Feng,X.G,S.Z.Xu,Z.Z.Xu,Appl.Surf.Sci.,252,5109-5115,2006.
48.T.W.Y.A Zhao,D.P.Zhang,S.H.Fan,J.D.Shao,Z.X.Fan,Appl.Surf.Sci.,239,171-175,2005.
49.M.G Maria Crisan,L.Predoana,R.Scurtu and A.M.Zaharescu,J.Sol-Gel Sci.Technol.32,2004 167-172.
50.R.Wang,K.Hashimoto,A.Fujishima,M.Chikuni,E.Kojima,A.Kitamura,M.Shimohigoshi and T.Watanabe:Adv.Mater.10 (1998)135.
51.F.Xia,Adv.Mater.2007,19,2520-2524
52.S.N.Frank,A.J.Bard,J.Phy.Chem.81(1977):1484-1488
53.K.Hashimoto et al.Jpn.J.Appl.Phys.,44,(2005)8269-8285
54.R.Wang,K.Hashimoto,A.Fujishima,Nature.388 (1997)431-432
55.T.Watanabe et al.Thin Solid Films 351 (1999)260-263
56.A.Fujishima,X.Zhang,C.R.Chimie 9 (2006)750-760
57.M.Chen,Z.L.Pei,X.Wang,C.Sun,L.S.Wen,J.Vac.Sci.technol.A,19,(2001),963-970.
58.S.Zafar,C.S.Ferekides,D.L.Morel,J.Vac.Sci.Technol.A,13,(1995)2177-2182.
59.K.Tominaga,N.Umezu,I.Mori,T.Ushiro,T.Moriga,I.nakabavashi,Thin Solid Films 334 (1998)35-39
1.H.A.Macleod,Thin-Film Optical Filters,Thirded.Institute of Physics Publishing,London,2001
2.B.S.Z.M.Jiang,D.T.Zhao,J.Liu,X.Wang,Appl.Phys.Lett.79(2001)3395-3397.
3.K.S.Hidehiko Yoda,Y.J.Hiratani,O.Hanaizumi,Appl.Phys.Lett.43(2004)3548-3554,.
4.顾培夫,薄膜技术,浙江:浙江大学出版社,1990.
5.F.O'Sullivan et.al.,J.Appl.Phys.97(2005) 033529
6.J.H.L.X.Yi,R.Scholz,M.Zacharias,Appl.Phys.Lett.81(2002) 4248-4250,U.Kahler,H.Hofmeister,Appl.Phys.Lett.75(1999) 641-643.
7.L.X.Yi,J.Heitmann,R.Scholz,M.Zacharias,Appl.Phys.Lett.81(2002)4248-4250.
8.M.Zacharias,J.Heitmann,R.Scholz,U.Kahler,M.Schmidt,J.Bl(a|")sing,Appl.Phys.Lett.80(2002) 661-663.
9.D.Nesheva,C.Raptis,A.Perakis,I.Bineva,Z.Aneva,Z.Levi,S.Alexandrova,H.Hofmeister,J.Appl.Phys.92(2002) 4678-4683.
10.L.Bi,Y.He,J.Y.Feng,J.Cryst.Growth 289(2006) 564-567.
11.V.Kapaklis,C.Politis,P.Poulopoulos,P.Schweiss,Mater.Sci.Eng.B 124-125(2005) 475-478.
12.A.Smith,Z.H.Yamani,N.Roberts,J.Turner,S.R.Habbal,S.Granick,M.H.Nayfeh,Phys.Rev.B 72(2005),205307-1-5.
13.U.K.H.Hofmeister,Appl.Phys.Lett.75(1999) 641-643.
14.I.P.Lisovskyy,I.Z.Indutnyy,B.N.Gnennyy,P.M.Lytvyn,D.O.Mazunov,A.S.Oberemok,N.V.Sopinskyy,P.E.Shepelyavyi,Semicond.37(2003) 97-102.
15.A.Szekeres,T.Nikolova,A.Paneva,A.Cziraki,Gy.J.Kovacs,I.Lisovskyy,D.Mazunov,I.Indutnyy,P.Shepeliavyi,Mater.Sci.Eng.B 124-125(2005) 504-507.
16.H.R.Philipp,J.Phys.Chem.Solids 32(1971) 1935.
17.X.Y.Chen,Y.F.Lu,Y.H.Wu,B.J.Cho,X.J.Xu,J.R.Dong,W.D.Song,J.Appl.Phys.97(2005),014913-1-10.
18.V.Y.Bratus,V.A.Yukhimchuk,L.I.Berezhinsky,M.Ya.Valakh,I.P.Vorona,I.Z.Indutnyi,T.T.Petrenko,P.E.Shepeliavy I",I.B.Yanchuk,Semicond.35(2001)821-826.
19.C.Tarrio,S.E.Schnatterly,J.Opt.Soc.Am.B 10 (1993)952-957
20.V.A.Y.V.Ya.Bratus,L.I.Berezhinsky,M.Ya.Valakh,I.P.Vorona,T.T.P.I.Z.Indutnyi,P.E.Shepeliavy (I|¨),I.B.Yanchuk,Semiconductors,35 (2001)821-826.
21.R.S.Y.Q.Wang,G.G.Ross,J.Cryst.Growth.294 (2006)486-489.
22.I.Z.I.I.P.Lisovskyy,B.N.Gnennyy,P.M.Lytvyn,D.O.Mazunov,N.V.S.A.S.Oberemok,P.E.Shepelyavyi,Semiconductors,37 (2003)97-102.
23.T.N.A.Szekeres,A.Paneva,A.Cziraki,Gy.J.Kovacs,I.Lisovskyy,and I.I.D.Mazunov,P.Shepeliavyi,Mater.Sci.Eng.,B,124-125 (2005)504-507.
24.W.K.Choi,C.K.Choo,K.K.Han,J.H.Chen,F.C.Loh and K.L.Tan,J.Appl.Phys.83(1998)2308-2314.
25.M.Tilsch,V.Scheuer,T.Tschudi,SPIE 3133 (1997)163-175.
26.E.Ritter,Phys.Math.12 (1961)275-276.
27.X.Y.Chen et.al.,JOURNAL OF APPLIED PHYSICS 97 (2005)014913
28.V.M.Burlakov,G.A.D.Briggs,A.P.Sutton,Angelo Bongiorno,Alfredo Pasquarello,Phys.Rev.B 93 (2004)135501
29.E.Dehan,P.Temple-Boyer,R.Henda,J.J.Pedroviejo,E.Scheid,Thin Solid Films 266 (1995)14-19
30.C.E.Morosanu,Thin Solid Films,65 (1980)171.
31.D.E.Aspnes,Thin Solid Films,65 (1982)249.
32.S.M.Sze,Physics of Semiconductor Devices,2nd edn.,Wiley-Interscience,New York,1981,p.582.
33.R.Swanepoel,J.Phps.E:Sci.Instrum.(Printed in Great Britain)16 (1983)1214—1222.
34.J.P.Borgogno et.al.Appl.Opt.21 (1982)22.
35.D.E.Aspnes,Thin Solid Films,65 (1982)249.
36.D.E.Aspnes,Phys.Rev.B.25 (1982)1358.
1.F.O'Sullivan et.al.,J.Appl.Phys.97(2005) 033529
2.M.H.Yang,C.M.Zhou,D.S.Jiang,fra.Phys.Technol.51,6(2008) 572-575
3.Y.Fink,J.Winn,S.Fan,C.Chen,J.Michael,J.Joannopoulos,E.Thomas,Science 282(1998) 679
4.赖发春,中国科学技术大学博士学位论文,2005.5.
5.W.J.Liu,X.J.Guo,C.H.Chien,Surf.& Coat.Technol.196(2005) 69-75
6.Y.Q.Hou,D.M.Zhuang,G.Zhang,M.Zhao,M.S.Wu,Appl.Surf.Sci.218(2003)97-105
7.M.G.Krishna,K,N.Rao,S.Mohan,Appl.Phys.Lett 57(1990) 6
8.Z.W.Zhao,B.K.Tay,G.Q.Yu and S.P.Lau,J.Phys:Condens.Matter 15(2003)7707-7715
9.E.F.Khawaja,F.Bouamrane,A.B.Hallak,M.A.Daous,M.A.Salim,J.Vac.Sci.Technol.A 11(3)(1993)
10.G.Guidoni,A.Dudek,S.Patsias,and M.Anglada,Materials Science and Engineering A-Structural Materials Properties Microstructure and Processing 397(2005) 209-214.
11.L.B.Chen,Surface Review and Letters 13(2006) 535-544
12.C.G.Zhou,N.Wang,and H.B.Xu,Mater.Sci.Engine.A-Structural Materials Properties Microstructure and Processing 452(2007) 569-574.
13.F.S.B.J.Fleig,V.Brichzin,H.R.Kim,J.Jamnik,G.Cristiani,and A.J.M.H.U.Habermeier,Fuel Cells 6(2006) 284-292.
14.K.M.Ghanashyam Krishna,N.Rao,S.Mohan,Appl.Phys.Lett 571990.
15.S.Venkataraj et.al.,J.Appl.Phys.91,8(2002)4863-4871
16 M.Li,F.C.Lai,H.Q.Wang,H.L.Hu,X.P.Wang,J.G.Houa,Y.Z.Song,Y.S.Jiang,Thin Solid Films,488(2005) 314-320
17.F.Jones et.al.,J.Vac.Sci.Technol.6(1988) 3088-3097
18.C.M.Gilmore,J.Vac.Sci.Technol.A.5(1987) 2085-2087
19.P.Briois et.al.,Ionic 7(2001) 301-305
20.W.C.Tsai,T.Y.Tseng,Thin Solid Films 306(1997)86-91.
21.S.H.G,J.Mater.Sci,10,1527-1535(1975)
22.H.Hayashi et.al.,Solid State Ionics 176(2005) 613-619
23.H.Tomaszewski et.al.Thin.Solid.Films 287(1996) 104-109
24.H.Tomaszewski et.al.J.Eur.Ceram.Soc.15(1995) 17
25.T.S.Hideko Hayashi,N.Maruyama,H.Inaba,K.Kawamura,M.Mori,Solid State Ionics 176(2005) 613-619
26.H.A.Macleod,Thin-Film Optical Filters,Third ed.Institute of Physics Publishing,London,2001.
27.麦克劳德著,周九林,尹树百译,光学薄膜技术,北京:国防工业出版社,1974.
1.S.N.Frank,A.J.Bard,J.Phys.Chem.81(1977) 1484.
2.T.Watanabe,Thin Solid Films 351(1999) 260-263.
3.K.Hashimoto et.al.,Jpn.J.Appl.Phys.,44,12(2005) 8269-8285
4.R.Wang,K.Hashimoto A.Fujishima,M.Chikuni,E.Kojima,A.Kitamura,M.Shimohigoshi,T.Watanabe,Nature 388(1997)431
5.R.Wang,K.Hashimoto,A.Fujishima,M.Chikuni,E.Kojima,A.Kitamura,M.Shimohigoshi and T.Watanabe:Adv.Mater.10(1998) 135.
6.A.Fujishima et.al.Chimei 9(2006) 750-760
7.A.L.Linsebigler,G.Q.Lu,J.T.Yates,Chem.Rev.3(1995) 735.
8.唐玉朝,胡春,王怡中,光催化反应机理及动力学研究进展,化学进展,1(3),(2000)2192-2199
9.张彭义,余刚,蒋展鹏,半导体光催化剂及其改性技术进展,环境科学进展.(1997):51-10
10.M.A.Fox,Nouv,J.Chem.11(1987) 129.
11.G.Rothenberger,J.Moser,M.Gratzel,J.Am.Chem.Soc.1985,107,8054.
12.M.Tomkiewiez,Catalysis Today.58(2000) 115
13.D.Mardare et.al.,Thin Solid Films 515(2007) 6474-6478
14.白雪莲,中国科技大学博士学位论文(2007.7)8-9
15.M.L.Zhang,T.An,G.Y.Sheng,J et al.,Appl.Catal.A:Gen.260(2004) 215.
16.V.Iliev,D.Tomova,L.Bilyarska,et al.,Appl.Catal.B:Environ.270(2006) 266
17.M.Kitano et.al.,Applied Catalysis A:General 325(2007) 1-14
18.M.Miyauchi,A.Nakajima,A.Fujishima,K.Hashimoto,T.Watanabe:Chem.Mater.12(2000) 3.
19.R.D.Sun,A.Nakajima,A.Fujishim,T.Watanabe and K.Hashimoto:J.Phys.Chem.B 105(2001) 1984.
20.N.Sakai,R.Wang,A.Fujishima,T.Watanabe and K.Hashimoto:Langmuir 14(1998) 5918.
21.X.J.Feng,L.Jiang,Adv.Mater.18(2006) 3063-3078
22.S.Yin,T.Sato,J.Mater.Chem.15(2005) 4584.
23.Q.M.Song,B.J.Wu,F.Huang,M.Li,B.Xie,and H.Q.Wang,J.Appl.Phys.105(2009) 044509
24.Y.Song,T.Sakurai,Vacuum 74(2004) 409-415.
25.R.Swanepoel,J.Phys.E.16(1983) 1214-1222.
26.M.F.Hossain,S.Biswas,T.Takahashi,Y.Kubota,and A.Fujishima,Phys.Stat.Sol.(a) 205,8(2008) 2018-2022
27.M.A.Fox,M.T.Dulay,Chem.Rev.93(1993) 341-357
28.J.Musil,D.He(?)man,and J.(?)cha,J.Vae.Sci.Technol.A 24,3(2006) 521-528
29.K.Eufinger,D.Poelman,H.Poelman,R.De Gryse,G.B.Matin,Appl.Surf.Sci.254(2007) 148-152
30.M.F.Hossain,S.Biswas,T.Takahashi,Y.Kubota,and A.Fujishima,Phys.Stat.Sol.(a) 205,8(2008) 2018-2022
31.D.L.Liao,C.A.Badour,B.Q.Liao,J.photochem.Photobiol.A:Chemistry 194(2008) 11-19
32.K.Eufinger,D.Poelman,H.Poelman,R.D.Gryse and G.B.Marin,J.Phys.D:Appl.Phys.40(2007) 5232-5238
33.K.R.Wu et.al.Surface & Coatings Technology 200(2006) 6030-6036
34.F.Fernandez-Lima et.al.,Thin Solid Films 419(2002) 65-68
35.C.Cheng et.al.,J.Phys.Chem.C 111(2007) 16712-16716
36.A.Fern(?)ndez,G.Lassaletta,V.M.Jim(?)nez,A.Justo,A.R.Gonz(?)lez-Elipe,J.-M.Herrmann,H.Tahiri,Y.Ait-Ichou,Applied Catalysis B:Environmental 7(1995)49-63
37.A.Mills,A.Lepre,N.Elliot,S.Bhopal,I.P.Parkin,S.A.O'Neill,Journal of Photochemistry and Photobiology A:Chemistry 160(2003) 213-224
38.H.-J.Nam,T.Amemiya,M.Murabayashi,K.Itoh,Journal of Physical Chemistry B 108(2004) 8254-8259
39.H.Tada,M.Tanaka,Langmuir 13(1997) 360-364;
40.S.Takeda,S.Suzuki,H.Odaka,H.Hosono,Thin Solid Films 392(2001) 338-344
41.C.Amra et.al.,Appl.Opt.32(28)(1993) 5481-5491
42.黄昆,韩汝琦,《固体物理学》,高等教育出版社,(1988)437-438
43.C.Y.Lin et.al.,Appl.Surf.Sci.253(2006) 898-903
44.D.L.Liao et.al.,J.Photochem.Photobiol.A:Chem.194(2008) 11-19
45.N.Serpone,P.Maruthamuthu,P.Pichat,E.Pelizzetti,H.J.Hidaka,J.Photochem.Photobiol.A:Chem.85(1995) 247-252.
46.V.Sukharev,R.Kershaw,J.Photochem.Photobiol.A:Chem.98(1996) 165-169.
47.(?).(?)zg(u|¨)r et.al.,J.Appl.Phys.98(2005) 041301
48.M.Joseph,H.Tabata,T.Kawai,Jpn.J.Appl.Phys.38(1999) 2505.
49.T.Hitosugi et.al.,APPLIED PHYSICS LETTERS 90 (2007)212106
50.Y.Furubayashi,N.Yamada,Y.Hirose,Y.Yamamoto,M.Otani,J.Appl.Phys.101(2007)093705
2.麦克劳德著,周九林,尹树百译,光学薄膜技术,北京:国防工业出版社,1974.
3.唐晋发,顾培夫编,薄膜光学与技术,北京:机械工业出版社,1989.
4.顾培夫,薄膜技术,浙江:浙江大学出版社,1990.
5.赖发春,中国科学技术大学博士学位论文,2005.5.
6.H.R.Philipp,J.Phys.Chem.Solids 32(1971) 1935.
7.F.C.Lai et.al.,CHINESE OPTICS LETTERS 3,8(2005) 490-493
8 "Handbook of Plasma Processing Technology:Fundamentals,Etching,Deposition,and Surface Interactions",S.M.Rossnagel,J.J.Cuomo,W.D.Westwood,Eds.,Noyes Publications,Park Ridge 1990.
9.A.M.Wro'bel,M.R.Wertheimer,"Plasma-Polymerized Organosilicones and Organometalics",in:Plasma Deposition,Treatment,and Etching of Polymers,R.d'Agostino,Ed.,Academic Press,Boston 1990,163.
10.A.Gr(u|")niger,"Deposition of SiO_x Diffusion Barriers on Flexible Packaging Materials by Plasma Enhanced Chemical Vapor Deposition",Thesis No.15684,E.T.H.Zurich(2004).
11.J.Pulpytel,F.Arefi-Khonsari,W.Morscheidt,J.Phys.D:Appl.Phys.38(2005) 1.
12.K.S.Chen,N.Inagaki,K.Katsuura,J.Appl.Polym.Sci.27(1982) 4655.
13.N.Schwarzer,Surf.Coat.Technol.133(2000) 397.
14.H.Yoda,K.Shiraishi,Y.J.Hiratani,O.Hanaizumi,Appl.Opt.43,17(2004)3548-3554
15.Z.M.Jiang et.al.,Appl.Phys.Lett.79(2001) 3395-3397
16.Q.M.Song et.al.,J.Vac.Sci.Technol.26(2),2008 265-269
17.宋秋明,黄烽,李明,谢斌,王海千,姜友松,宋亦周,“反应磁控溅射制备渐变折射率SiO_x外rugate滤光片”,《中国激光》,(2009)In-press
18.M.Yamada,Y.Ohmori,K.Takada,M.Kobayashi,Appl.Opt.30,6(1991)682-688
19.L.I.Epstein,J.Opt.Soc.Am,42,806-810,1952.
20.P.H.Berning,J.Opt.Soc.Am,52,431-436,1962.
21.J.A.Dobrowolski,S.H.C.Piotrowski,Appl.Opt,21,1512-1521,1981
22.J.Allen,B.Herrington,Proc.SPIE.2046,126-131,1993.
23.W.J.Gunning,R.L.Hall,F.J.Woodberry,W.H.Southwell,N.Gluck,Appl.Opt.,28,2945-2948,1989.
24.C.C.Lee,C.J.Tang,J.Y.Wu,Appl.Opt,45,1333-1337,2006.
25.Q.Tang,H.Matsuda,K.Kikuchi and S.Ogura,J.Vac.Sci.Technol.A,16,3384-3388,1998.
26.X.R.Wang,H.Masumoto,Y.Someno and T.Hirai,Appl.Phys.Lett,72 3264-3266,1998
27.H.Bartzsch,S.Lange,P.Frach,and K.Goedicke,Surf & Coat Technol,180-181,616-620,2004.
28.H.Yoda,D.Tanaka,O.Hanaizumi,Y.Kogami,K.Shiraishi,Appl.Opt.,29 45,184-190,2006.
30.E.P.Donovan,D.Van Vechten,A.D.F.Kahn,C.A.Carosella,G.K.Hubler,Appl.Opt.28,2940-2944,1989.
31.P.L.Swart,P.V.Bulkin,B.M.Lacquet,Opt.Eng,35,1214-1219,1997.
32.P.L.Swart,B.M.Lacquet,A.A.Chtcherbakov,P.V.Bulkin,J.Vac.Sci.Technol.A,18,74-78,2000.
33.J.Y.Song,T.Sakurai,Vacuum 74 (2004)409-415
34.W.E.Johnson,R.L.Crane,Proc.SPIE 2046,88-108,1993.
35.N.M.Ravindra etal.,J.Appl.Phys.60 (1986)1139-1146
36.K.L.Chopra,S.Major,D.K.Pandya,Thin Solid films,102,1-46,1983.
37.T.J.Courts,J.D.Perkins,D.S.Ginley,T.O.Mason,in the 195th Meeting of the Electrochemical Society,Seattle,Washington,1999.
38.J.Robertson,J.Non-Cryst.Sol,354,2791-2795,2008.
39.Y.Chen,et al.J.Appl.Phys.96,(2004)3180-3186
40.L.X.Yi,etal.Appl.Phys.Lett.81 (2002)4248-4250
41.M.Zacharias et.al.Appl.Phys.Lett.80 (2002)661-663
42.K.Sato et.al.,Thin Solid Films 515 (2006)778-781
433.Y.Q.Wang et.al.J.Crys.Growth 294 (2006)486-489
44.V.M.Burlakov.et.al.Phys.Rev.Let.93 (2004)135501
45.I.P.Lisovskyy et.al.Semicon.,37 (2003)97-102
46.F.O'Sullivan,J.Appl.Phys.97,033529 2005
47.T.J.Haiyi Sun,X.X.Li,C.B.Li,D.H.Feng,X.G,S.Z.Xu,Z.Z.Xu,Appl.Surf.Sci.,252,5109-5115,2006.
48.T.W.Y.A Zhao,D.P.Zhang,S.H.Fan,J.D.Shao,Z.X.Fan,Appl.Surf.Sci.,239,171-175,2005.
49.M.G Maria Crisan,L.Predoana,R.Scurtu and A.M.Zaharescu,J.Sol-Gel Sci.Technol.32,2004 167-172.
50.R.Wang,K.Hashimoto,A.Fujishima,M.Chikuni,E.Kojima,A.Kitamura,M.Shimohigoshi and T.Watanabe:Adv.Mater.10 (1998)135.
51.F.Xia,Adv.Mater.2007,19,2520-2524
52.S.N.Frank,A.J.Bard,J.Phy.Chem.81(1977):1484-1488
53.K.Hashimoto et al.Jpn.J.Appl.Phys.,44,(2005)8269-8285
54.R.Wang,K.Hashimoto,A.Fujishima,Nature.388 (1997)431-432
55.T.Watanabe et al.Thin Solid Films 351 (1999)260-263
56.A.Fujishima,X.Zhang,C.R.Chimie 9 (2006)750-760
57.M.Chen,Z.L.Pei,X.Wang,C.Sun,L.S.Wen,J.Vac.Sci.technol.A,19,(2001),963-970.
58.S.Zafar,C.S.Ferekides,D.L.Morel,J.Vac.Sci.Technol.A,13,(1995)2177-2182.
59.K.Tominaga,N.Umezu,I.Mori,T.Ushiro,T.Moriga,I.nakabavashi,Thin Solid Films 334 (1998)35-39
1.H.A.Macleod,Thin-Film Optical Filters,Thirded.Institute of Physics Publishing,London,2001
2.B.S.Z.M.Jiang,D.T.Zhao,J.Liu,X.Wang,Appl.Phys.Lett.79(2001)3395-3397.
3.K.S.Hidehiko Yoda,Y.J.Hiratani,O.Hanaizumi,Appl.Phys.Lett.43(2004)3548-3554,.
4.顾培夫,薄膜技术,浙江:浙江大学出版社,1990.
5.F.O'Sullivan et.al.,J.Appl.Phys.97(2005) 033529
6.J.H.L.X.Yi,R.Scholz,M.Zacharias,Appl.Phys.Lett.81(2002) 4248-4250,U.Kahler,H.Hofmeister,Appl.Phys.Lett.75(1999) 641-643.
7.L.X.Yi,J.Heitmann,R.Scholz,M.Zacharias,Appl.Phys.Lett.81(2002)4248-4250.
8.M.Zacharias,J.Heitmann,R.Scholz,U.Kahler,M.Schmidt,J.Bl(a|")sing,Appl.Phys.Lett.80(2002) 661-663.
9.D.Nesheva,C.Raptis,A.Perakis,I.Bineva,Z.Aneva,Z.Levi,S.Alexandrova,H.Hofmeister,J.Appl.Phys.92(2002) 4678-4683.
10.L.Bi,Y.He,J.Y.Feng,J.Cryst.Growth 289(2006) 564-567.
11.V.Kapaklis,C.Politis,P.Poulopoulos,P.Schweiss,Mater.Sci.Eng.B 124-125(2005) 475-478.
12.A.Smith,Z.H.Yamani,N.Roberts,J.Turner,S.R.Habbal,S.Granick,M.H.Nayfeh,Phys.Rev.B 72(2005),205307-1-5.
13.U.K.H.Hofmeister,Appl.Phys.Lett.75(1999) 641-643.
14.I.P.Lisovskyy,I.Z.Indutnyy,B.N.Gnennyy,P.M.Lytvyn,D.O.Mazunov,A.S.Oberemok,N.V.Sopinskyy,P.E.Shepelyavyi,Semicond.37(2003) 97-102.
15.A.Szekeres,T.Nikolova,A.Paneva,A.Cziraki,Gy.J.Kovacs,I.Lisovskyy,D.Mazunov,I.Indutnyy,P.Shepeliavyi,Mater.Sci.Eng.B 124-125(2005) 504-507.
16.H.R.Philipp,J.Phys.Chem.Solids 32(1971) 1935.
17.X.Y.Chen,Y.F.Lu,Y.H.Wu,B.J.Cho,X.J.Xu,J.R.Dong,W.D.Song,J.Appl.Phys.97(2005),014913-1-10.
18.V.Y.Bratus,V.A.Yukhimchuk,L.I.Berezhinsky,M.Ya.Valakh,I.P.Vorona,I.Z.Indutnyi,T.T.Petrenko,P.E.Shepeliavy I",I.B.Yanchuk,Semicond.35(2001)821-826.
19.C.Tarrio,S.E.Schnatterly,J.Opt.Soc.Am.B 10 (1993)952-957
20.V.A.Y.V.Ya.Bratus,L.I.Berezhinsky,M.Ya.Valakh,I.P.Vorona,T.T.P.I.Z.Indutnyi,P.E.Shepeliavy (I|¨),I.B.Yanchuk,Semiconductors,35 (2001)821-826.
21.R.S.Y.Q.Wang,G.G.Ross,J.Cryst.Growth.294 (2006)486-489.
22.I.Z.I.I.P.Lisovskyy,B.N.Gnennyy,P.M.Lytvyn,D.O.Mazunov,N.V.S.A.S.Oberemok,P.E.Shepelyavyi,Semiconductors,37 (2003)97-102.
23.T.N.A.Szekeres,A.Paneva,A.Cziraki,Gy.J.Kovacs,I.Lisovskyy,and I.I.D.Mazunov,P.Shepeliavyi,Mater.Sci.Eng.,B,124-125 (2005)504-507.
24.W.K.Choi,C.K.Choo,K.K.Han,J.H.Chen,F.C.Loh and K.L.Tan,J.Appl.Phys.83(1998)2308-2314.
25.M.Tilsch,V.Scheuer,T.Tschudi,SPIE 3133 (1997)163-175.
26.E.Ritter,Phys.Math.12 (1961)275-276.
27.X.Y.Chen et.al.,JOURNAL OF APPLIED PHYSICS 97 (2005)014913
28.V.M.Burlakov,G.A.D.Briggs,A.P.Sutton,Angelo Bongiorno,Alfredo Pasquarello,Phys.Rev.B 93 (2004)135501
29.E.Dehan,P.Temple-Boyer,R.Henda,J.J.Pedroviejo,E.Scheid,Thin Solid Films 266 (1995)14-19
30.C.E.Morosanu,Thin Solid Films,65 (1980)171.
31.D.E.Aspnes,Thin Solid Films,65 (1982)249.
32.S.M.Sze,Physics of Semiconductor Devices,2nd edn.,Wiley-Interscience,New York,1981,p.582.
33.R.Swanepoel,J.Phps.E:Sci.Instrum.(Printed in Great Britain)16 (1983)1214—1222.
34.J.P.Borgogno et.al.Appl.Opt.21 (1982)22.
35.D.E.Aspnes,Thin Solid Films,65 (1982)249.
36.D.E.Aspnes,Phys.Rev.B.25 (1982)1358.
1.F.O'Sullivan et.al.,J.Appl.Phys.97(2005) 033529
2.M.H.Yang,C.M.Zhou,D.S.Jiang,fra.Phys.Technol.51,6(2008) 572-575
3.Y.Fink,J.Winn,S.Fan,C.Chen,J.Michael,J.Joannopoulos,E.Thomas,Science 282(1998) 679
4.赖发春,中国科学技术大学博士学位论文,2005.5.
5.W.J.Liu,X.J.Guo,C.H.Chien,Surf.& Coat.Technol.196(2005) 69-75
6.Y.Q.Hou,D.M.Zhuang,G.Zhang,M.Zhao,M.S.Wu,Appl.Surf.Sci.218(2003)97-105
7.M.G.Krishna,K,N.Rao,S.Mohan,Appl.Phys.Lett 57(1990) 6
8.Z.W.Zhao,B.K.Tay,G.Q.Yu and S.P.Lau,J.Phys:Condens.Matter 15(2003)7707-7715
9.E.F.Khawaja,F.Bouamrane,A.B.Hallak,M.A.Daous,M.A.Salim,J.Vac.Sci.Technol.A 11(3)(1993)
10.G.Guidoni,A.Dudek,S.Patsias,and M.Anglada,Materials Science and Engineering A-Structural Materials Properties Microstructure and Processing 397(2005) 209-214.
11.L.B.Chen,Surface Review and Letters 13(2006) 535-544
12.C.G.Zhou,N.Wang,and H.B.Xu,Mater.Sci.Engine.A-Structural Materials Properties Microstructure and Processing 452(2007) 569-574.
13.F.S.B.J.Fleig,V.Brichzin,H.R.Kim,J.Jamnik,G.Cristiani,and A.J.M.H.U.Habermeier,Fuel Cells 6(2006) 284-292.
14.K.M.Ghanashyam Krishna,N.Rao,S.Mohan,Appl.Phys.Lett 571990.
15.S.Venkataraj et.al.,J.Appl.Phys.91,8(2002)4863-4871
16 M.Li,F.C.Lai,H.Q.Wang,H.L.Hu,X.P.Wang,J.G.Houa,Y.Z.Song,Y.S.Jiang,Thin Solid Films,488(2005) 314-320
17.F.Jones et.al.,J.Vac.Sci.Technol.6(1988) 3088-3097
18.C.M.Gilmore,J.Vac.Sci.Technol.A.5(1987) 2085-2087
19.P.Briois et.al.,Ionic 7(2001) 301-305
20.W.C.Tsai,T.Y.Tseng,Thin Solid Films 306(1997)86-91.
21.S.H.G,J.Mater.Sci,10,1527-1535(1975)
22.H.Hayashi et.al.,Solid State Ionics 176(2005) 613-619
23.H.Tomaszewski et.al.Thin.Solid.Films 287(1996) 104-109
24.H.Tomaszewski et.al.J.Eur.Ceram.Soc.15(1995) 17
25.T.S.Hideko Hayashi,N.Maruyama,H.Inaba,K.Kawamura,M.Mori,Solid State Ionics 176(2005) 613-619
26.H.A.Macleod,Thin-Film Optical Filters,Third ed.Institute of Physics Publishing,London,2001.
27.麦克劳德著,周九林,尹树百译,光学薄膜技术,北京:国防工业出版社,1974.
1.S.N.Frank,A.J.Bard,J.Phys.Chem.81(1977) 1484.
2.T.Watanabe,Thin Solid Films 351(1999) 260-263.
3.K.Hashimoto et.al.,Jpn.J.Appl.Phys.,44,12(2005) 8269-8285
4.R.Wang,K.Hashimoto A.Fujishima,M.Chikuni,E.Kojima,A.Kitamura,M.Shimohigoshi,T.Watanabe,Nature 388(1997)431
5.R.Wang,K.Hashimoto,A.Fujishima,M.Chikuni,E.Kojima,A.Kitamura,M.Shimohigoshi and T.Watanabe:Adv.Mater.10(1998) 135.
6.A.Fujishima et.al.Chimei 9(2006) 750-760
7.A.L.Linsebigler,G.Q.Lu,J.T.Yates,Chem.Rev.3(1995) 735.
8.唐玉朝,胡春,王怡中,光催化反应机理及动力学研究进展,化学进展,1(3),(2000)2192-2199
9.张彭义,余刚,蒋展鹏,半导体光催化剂及其改性技术进展,环境科学进展.(1997):51-10
10.M.A.Fox,Nouv,J.Chem.11(1987) 129.
11.G.Rothenberger,J.Moser,M.Gratzel,J.Am.Chem.Soc.1985,107,8054.
12.M.Tomkiewiez,Catalysis Today.58(2000) 115
13.D.Mardare et.al.,Thin Solid Films 515(2007) 6474-6478
14.白雪莲,中国科技大学博士学位论文(2007.7)8-9
15.M.L.Zhang,T.An,G.Y.Sheng,J et al.,Appl.Catal.A:Gen.260(2004) 215.
16.V.Iliev,D.Tomova,L.Bilyarska,et al.,Appl.Catal.B:Environ.270(2006) 266
17.M.Kitano et.al.,Applied Catalysis A:General 325(2007) 1-14
18.M.Miyauchi,A.Nakajima,A.Fujishima,K.Hashimoto,T.Watanabe:Chem.Mater.12(2000) 3.
19.R.D.Sun,A.Nakajima,A.Fujishim,T.Watanabe and K.Hashimoto:J.Phys.Chem.B 105(2001) 1984.
20.N.Sakai,R.Wang,A.Fujishima,T.Watanabe and K.Hashimoto:Langmuir 14(1998) 5918.
21.X.J.Feng,L.Jiang,Adv.Mater.18(2006) 3063-3078
22.S.Yin,T.Sato,J.Mater.Chem.15(2005) 4584.
23.Q.M.Song,B.J.Wu,F.Huang,M.Li,B.Xie,and H.Q.Wang,J.Appl.Phys.105(2009) 044509
24.Y.Song,T.Sakurai,Vacuum 74(2004) 409-415.
25.R.Swanepoel,J.Phys.E.16(1983) 1214-1222.
26.M.F.Hossain,S.Biswas,T.Takahashi,Y.Kubota,and A.Fujishima,Phys.Stat.Sol.(a) 205,8(2008) 2018-2022
27.M.A.Fox,M.T.Dulay,Chem.Rev.93(1993) 341-357
28.J.Musil,D.He(?)man,and J.(?)cha,J.Vae.Sci.Technol.A 24,3(2006) 521-528
29.K.Eufinger,D.Poelman,H.Poelman,R.De Gryse,G.B.Matin,Appl.Surf.Sci.254(2007) 148-152
30.M.F.Hossain,S.Biswas,T.Takahashi,Y.Kubota,and A.Fujishima,Phys.Stat.Sol.(a) 205,8(2008) 2018-2022
31.D.L.Liao,C.A.Badour,B.Q.Liao,J.photochem.Photobiol.A:Chemistry 194(2008) 11-19
32.K.Eufinger,D.Poelman,H.Poelman,R.D.Gryse and G.B.Marin,J.Phys.D:Appl.Phys.40(2007) 5232-5238
33.K.R.Wu et.al.Surface & Coatings Technology 200(2006) 6030-6036
34.F.Fernandez-Lima et.al.,Thin Solid Films 419(2002) 65-68
35.C.Cheng et.al.,J.Phys.Chem.C 111(2007) 16712-16716
36.A.Fern(?)ndez,G.Lassaletta,V.M.Jim(?)nez,A.Justo,A.R.Gonz(?)lez-Elipe,J.-M.Herrmann,H.Tahiri,Y.Ait-Ichou,Applied Catalysis B:Environmental 7(1995)49-63
37.A.Mills,A.Lepre,N.Elliot,S.Bhopal,I.P.Parkin,S.A.O'Neill,Journal of Photochemistry and Photobiology A:Chemistry 160(2003) 213-224
38.H.-J.Nam,T.Amemiya,M.Murabayashi,K.Itoh,Journal of Physical Chemistry B 108(2004) 8254-8259
39.H.Tada,M.Tanaka,Langmuir 13(1997) 360-364;
40.S.Takeda,S.Suzuki,H.Odaka,H.Hosono,Thin Solid Films 392(2001) 338-344
41.C.Amra et.al.,Appl.Opt.32(28)(1993) 5481-5491
42.黄昆,韩汝琦,《固体物理学》,高等教育出版社,(1988)437-438
43.C.Y.Lin et.al.,Appl.Surf.Sci.253(2006) 898-903
44.D.L.Liao et.al.,J.Photochem.Photobiol.A:Chem.194(2008) 11-19
45.N.Serpone,P.Maruthamuthu,P.Pichat,E.Pelizzetti,H.J.Hidaka,J.Photochem.Photobiol.A:Chem.85(1995) 247-252.
46.V.Sukharev,R.Kershaw,J.Photochem.Photobiol.A:Chem.98(1996) 165-169.
47.(?).(?)zg(u|¨)r et.al.,J.Appl.Phys.98(2005) 041301
48.M.Joseph,H.Tabata,T.Kawai,Jpn.J.Appl.Phys.38(1999) 2505.
49.T.Hitosugi et.al.,APPLIED PHYSICS LETTERS 90 (2007)212106
50.Y.Furubayashi,N.Yamada,Y.Hirose,Y.Yamamoto,M.Otani,J.Appl.Phys.101(2007)093705