智能功率集成电路中部分模块的研究
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摘要
智能功率集成电路是指将输出功率器件与信息处理系统及其外围接口电路、保护电路、检测诊断电路等都集成在同一芯片上。智能功率集成电路的应用无处不在，从日常生活中的家电照明、电子计算机、各种消费电子产品，到工业应用控制、航空航天仪器、军事电子产品等领域，市场非常广阔。随着电能处理领域的不断扩大，以及社会对环保问题的日益重视，效率和成本问题逐渐成为关注热点，智能功率集成电路成为整个半导体产业中最为活跃的领域之一。人们对降低电子产品的功耗和降低成本的广泛需求，将推动智能功率集成电路的稳步发展。
本论文正是在充分了解国内外智能功率集成电路研究现状的基础上，对智能功率集成电路中离线式开关电源芯片中所需的部分模块进行了深入的研究。开发一款离线式开关电源芯片，需要工艺、器件、电路的紧密配合。本文的研究重点在于，开发离线式开关电源芯片所用的工艺平台；设计芯片中需要的高压启动电流源；设计芯片中的控制电路；对芯片中功率器件做出改进，使其具有更好的电压电流特性。
本文的主要工作有：
1.开发离线式开关电源芯片采用的工艺平台。芯片采用的C1工艺是采用陈星弼院士发明的“优化横向变掺杂”技术，在成熟的CMOS工艺基础上发展而来，此工艺可以与国内主流的CMOS/BiCMOS工艺平台兼容。工艺平台可实现的器件包括耐压800V的VDMOS、LDMOS，耐压50V的NMOS、PMOS，耐压10V的NMOS、PMOS，以及各种稳压管、双极管、电阻、电容等。文中对多次扩散后的杂质分布的表达式进行了推导，此表达式可以在工艺设计中帮助预先估计杂质扩散的最终分布。
2.设计了芯片需要的高压启动电流源。在离线式开关电源芯片中通常需要一个高压启动电流源来给芯片中的控制电路提供启动电流。通常的办法是外接一些元件或者利用额外的掩模板来构成此电流源。本文在陈星弼院士专利“一种半导体器件及其提供的低压电源的应用”的基础上，实现了两种高压启动电流源，其中一种适合输出5V左右的输出电压，另一种适合输出大于10V的输出电压。实验结果证明，在未使用外界元件和额外的掩模板的情况下，高压启动电流源能正常的启动和重启动，并在电流源关闭的情况下从市电抽取很少电流或者不抽取电流。
3.设计了芯片里控制电路。芯片中的功率管需要控制电路来控制其开关以及保护电路来保障其安全工作。文中对控制电路中的稳压器模块、基准源模块、振荡器模块和逻辑模块做了介绍。文中对流片后的芯片搭电路板进行测试。实验结果表明，控制电路中各电路模块能够实现其设计功能；芯片能够正常的启动、重启动；在100V的交流市电下，芯片能够按照要求输出一定功率。但是，芯片中控制电路并没有完全达到设计指标，需要根据实验结果进一步修改。
4.提出了一种快速关断的新型LIGBT器件。IGBT由于在导通时在耐压区引入电导调制效应，可以降低导通电阻，增大导通电流密度，可以极大的降低芯片面积，但是IGBT的缺点是慢的关断速度。本文提出一种新结构的LIGBT，新结构在器件发射极并联了一个PMOS晶体管，用于在器件关断时短路器件发射结。相比传统结构的LIGBT，新结构在未降低导通特性的情况下，将器件关断时间从120ns降低到12ns，关断功耗从2mJ/cm2降到1.43mJ/cm2。
Smart power integrated circuits (SPIC) means power devices, signal processingsystem, interface circuits, protect circuits and detection circuits are integrated in amonolithic chip. SPICs are used everywhere, like consumer electronics, computer,domestic appliance, lightning, industrial control, aerospace, military area and so on.With the increase of the area which needs electricity and the focus on the environment,efficiency of processing electricity and cost are becoming the hot spot. SPIC hasbecome one of the most active areas of the whole semiconductor industry. The demandof decreasing of the energy cost and economic cost of the electronic products will boostthe development of SPIC.
An off-line switched mode power supply (SMPS) chip CXB1101is studied in thedissertation. To design an off-line SMPS chip, the technology, the power devices andthe circuits need to be designed carefully together. The research of the dissertationfocuses on the following parts: design of the technology process, design of the highvoltage start-up current source, design of the control circuits and improvement of thepower devices.
The author’s original main work is as follows.
1. The technology process for the off-line SMPS chip is designed. The C1process,on which the chip is designed, is based on the OPT VLD technology proposed byProfessor Chen and is compatible with the main stream micron/submicron technologyprocess. The devices contain VDMOS and LDMOS which sustain800V breakdownvoltage, NMOS and PMOS which sustain50V breakdown voltage, NMOS and PMOSwhich sustain10V breakdown voltage and zener diodes, resistors, capacitors. Theimpurity distribution after multiple diffusion processes is analyzed and a simpleexpression for describing the distribution is given. The expression is helpful andinstructive to the design and fabrication of devices.
2. The high voltage start-up current source needed in the SMPS chip is designed. Ahigh voltage start-up current source is always needed in a SMPS to provide start-up current for the control ICs. Usually external components or extra masks are used toform the current device. Based on Professor Chen’s patent “Method of producing alow-voltage power supply in a power integrated circuit”, two types of current source aredesigned. One of them provides output voltage about5V; the other provides outputvoltage larger than10V. The second one is used in the chip. Experimental results show,without using external components and extra mask, the high voltage start-up currentsource can start up and re-startup as designed. The current sources draw little current orno current from the line when shut down.
3. The control ICs in the chip are designed. The power device in the chip needscontrol ICs to control its switch on and off, and to protect it. The regulator part,reference part, oscillator part and logic part are introduced in the dissertation. Thefabricated chip is tested. Experimental results show, the control ICs are able to functionas designed; the chip is able to start up and re-startup as designed; under a line voltageof100V, the chip is able to provide an amount of power as required. However, theelectrical characteristics are not fully accomplished and the chip needs to be altered.
4. A novel LIGBT structure with a shorting PMOST driven by a p-island in the driftregion is presented. As the shorting PMOST turns on and off automatically during turnoff and on state, low on state voltage and fast switching capability are combined in onestructure. Simulated results show no increase of on state voltage and a drastic drop offall time for emitter current from120ns to12ns compared to the one with the shortingPMOST turned off all the time. A drop of turn off loss from2mJ/cm2to1.43mJ/cm2isobtained compared to the conventional LIGBT.
本论文正是在充分了解国内外智能功率集成电路研究现状的基础上，对智能功率集成电路中离线式开关电源芯片中所需的部分模块进行了深入的研究。开发一款离线式开关电源芯片，需要工艺、器件、电路的紧密配合。本文的研究重点在于，开发离线式开关电源芯片所用的工艺平台；设计芯片中需要的高压启动电流源；设计芯片中的控制电路；对芯片中功率器件做出改进，使其具有更好的电压电流特性。
本文的主要工作有：
1.开发离线式开关电源芯片采用的工艺平台。芯片采用的C1工艺是采用陈星弼院士发明的“优化横向变掺杂”技术，在成熟的CMOS工艺基础上发展而来，此工艺可以与国内主流的CMOS/BiCMOS工艺平台兼容。工艺平台可实现的器件包括耐压800V的VDMOS、LDMOS，耐压50V的NMOS、PMOS，耐压10V的NMOS、PMOS，以及各种稳压管、双极管、电阻、电容等。文中对多次扩散后的杂质分布的表达式进行了推导，此表达式可以在工艺设计中帮助预先估计杂质扩散的最终分布。
2.设计了芯片需要的高压启动电流源。在离线式开关电源芯片中通常需要一个高压启动电流源来给芯片中的控制电路提供启动电流。通常的办法是外接一些元件或者利用额外的掩模板来构成此电流源。本文在陈星弼院士专利“一种半导体器件及其提供的低压电源的应用”的基础上，实现了两种高压启动电流源，其中一种适合输出5V左右的输出电压，另一种适合输出大于10V的输出电压。实验结果证明，在未使用外界元件和额外的掩模板的情况下，高压启动电流源能正常的启动和重启动，并在电流源关闭的情况下从市电抽取很少电流或者不抽取电流。
3.设计了芯片里控制电路。芯片中的功率管需要控制电路来控制其开关以及保护电路来保障其安全工作。文中对控制电路中的稳压器模块、基准源模块、振荡器模块和逻辑模块做了介绍。文中对流片后的芯片搭电路板进行测试。实验结果表明，控制电路中各电路模块能够实现其设计功能；芯片能够正常的启动、重启动；在100V的交流市电下，芯片能够按照要求输出一定功率。但是，芯片中控制电路并没有完全达到设计指标，需要根据实验结果进一步修改。
4.提出了一种快速关断的新型LIGBT器件。IGBT由于在导通时在耐压区引入电导调制效应，可以降低导通电阻，增大导通电流密度，可以极大的降低芯片面积，但是IGBT的缺点是慢的关断速度。本文提出一种新结构的LIGBT，新结构在器件发射极并联了一个PMOS晶体管，用于在器件关断时短路器件发射结。相比传统结构的LIGBT，新结构在未降低导通特性的情况下，将器件关断时间从120ns降低到12ns，关断功耗从2mJ/cm2降到1.43mJ/cm2。
Smart power integrated circuits (SPIC) means power devices, signal processingsystem, interface circuits, protect circuits and detection circuits are integrated in amonolithic chip. SPICs are used everywhere, like consumer electronics, computer,domestic appliance, lightning, industrial control, aerospace, military area and so on.With the increase of the area which needs electricity and the focus on the environment,efficiency of processing electricity and cost are becoming the hot spot. SPIC hasbecome one of the most active areas of the whole semiconductor industry. The demandof decreasing of the energy cost and economic cost of the electronic products will boostthe development of SPIC.
An off-line switched mode power supply (SMPS) chip CXB1101is studied in thedissertation. To design an off-line SMPS chip, the technology, the power devices andthe circuits need to be designed carefully together. The research of the dissertationfocuses on the following parts: design of the technology process, design of the highvoltage start-up current source, design of the control circuits and improvement of thepower devices.
The author’s original main work is as follows.
1. The technology process for the off-line SMPS chip is designed. The C1process,on which the chip is designed, is based on the OPT VLD technology proposed byProfessor Chen and is compatible with the main stream micron/submicron technologyprocess. The devices contain VDMOS and LDMOS which sustain800V breakdownvoltage, NMOS and PMOS which sustain50V breakdown voltage, NMOS and PMOSwhich sustain10V breakdown voltage and zener diodes, resistors, capacitors. Theimpurity distribution after multiple diffusion processes is analyzed and a simpleexpression for describing the distribution is given. The expression is helpful andinstructive to the design and fabrication of devices.
2. The high voltage start-up current source needed in the SMPS chip is designed. Ahigh voltage start-up current source is always needed in a SMPS to provide start-up current for the control ICs. Usually external components or extra masks are used toform the current device. Based on Professor Chen’s patent “Method of producing alow-voltage power supply in a power integrated circuit”, two types of current source aredesigned. One of them provides output voltage about5V; the other provides outputvoltage larger than10V. The second one is used in the chip. Experimental results show,without using external components and extra mask, the high voltage start-up currentsource can start up and re-startup as designed. The current sources draw little current orno current from the line when shut down.
3. The control ICs in the chip are designed. The power device in the chip needscontrol ICs to control its switch on and off, and to protect it. The regulator part,reference part, oscillator part and logic part are introduced in the dissertation. Thefabricated chip is tested. Experimental results show, the control ICs are able to functionas designed; the chip is able to start up and re-startup as designed; under a line voltageof100V, the chip is able to provide an amount of power as required. However, theelectrical characteristics are not fully accomplished and the chip needs to be altered.
4. A novel LIGBT structure with a shorting PMOST driven by a p-island in the driftregion is presented. As the shorting PMOST turns on and off automatically during turnoff and on state, low on state voltage and fast switching capability are combined in onestructure. Simulated results show no increase of on state voltage and a drastic drop offall time for emitter current from120ns to12ns compared to the one with the shortingPMOST turned off all the time. A drop of turn off loss from2mJ/cm2to1.43mJ/cm2isobtained compared to the conventional LIGBT.
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