纳米VOx的溶剂热制备及电化学性能的研究
详细信息    本馆镜像全文|  推荐本文 |  |   获取CNKI官网全文
摘要
在查阅大量文献的基础上,总结了钒氧化物的结构、性质、应用及纳米材料制备技术进展,本论文选用溶剂热合成方法,制备了纳米有序钒氧化物,获得了二氧化钒及其它钒氧化物纳米棒、纳米线、二氧化钒纳米蜂窝和纳米棒阵列。用XRD、TEM、SEM、DSC、XPS等测试手段对这些材料分别作了物相、形貌、稳定性等表征。
     论文中以丁醇、己醇等单元醇作为还原剂,通过溶剂热法制备出了VO_2(B)纳米棒和线。研究了反应温度和时间等条件对产物形貌的影响。同时开展了以多羟基多胺、咪唑为还原剂的钒氧化物的水热制备,合成出了钒氧化物纳米棒。进行了锰和镍离子掺杂下的纳米二氧化钒的制备,得到了排列规整的纳米棒簇。分别采用静电场和逆重力方向生长作为辅助手段得到了纳米阵列和蜂窝状的纳米结构。研究结果表明:温度和还原剂在纳米棒的形成过程中起了关键作用。单元醇在反应中不仅起到了还原剂的作用,而且还起到了导向剂的作用,有利于控制产物的形貌,生成均匀的纳米棒和纳米线。
     文中将样品作为储电材料,测量了材料的电池和超电容性能,材料的最高比容量达520mAh/g,显示了较好的电化学性能。锰和镍离子掺杂优化了样品的电化学性能。锰离子掺杂量为2%时,比容量增加了13%。同时,用正己醇作为还原剂,150℃下水热法得到的VO_2纳米线,扫描速度为10mV/s时,比电容达到336F/g。
Based on detailed investigation of a great deal of related literature,the structure, property,synthetic method and application of nano vanadium oxides have been reviewed.We fabricated ordered vanadium oxides and acquired nano-rods,nano-wires of vanadium dioxide and other vanadium oxides,honey-comb structure and nanorods-array of vanadium dioxide with solvothermal method.The phases, morphologies and thermal stability of the products were characterized by XRD,TEM, SEM,DSC,XPS,etc.
     B phase vanadium dioxide was synthesized via solvothermal method with n-butanol, hexanol as reducing agents.The influences of temperature and reaction time on the product were discussed.Vanadium oxides were synthesized via solvothermal method with multi-hydroxyl-amine and imidazole as reducing agents.Nano-clusters of VO_2(B) were obtained by doping manganese ions and nickel ions and nano-rods array and honeycomb structure were obtained by the aidance of electrostatic field and antigravity growth,respectively.Temperature and reducing agent play key role in forming nanorods.Unitary alcohols,used both as templates and as reducing agents,can avail to control the morphology of the products and furter to form nano-rods and nano-wires.
     The properties of samples were tested as material of electricity storage and the materials showed good electrochemical performance:The highest specific capacity of nano-rods array reached 520 mAh/g.With the dop of 2%Mn,the value of specific capacities of the products increased by 13%and the maximum reached 586.3 mAh/g. Meanwhile,nano-wires of VO_2(B)synthesized via hydrothermal showed the specific capacitance of 336 F/g.
引文
[1]N.Kimizuka,I.M,Solid State Chem,1974,9,69
    [2]O.Merdrignac-Conanec,K.E.Badraoui,P.Haridon,Journal of Solid State Chemistry 2005,178,218
    [3]X.T.Dong,G.Y.Hong,D.C.Yu and D.S.Yu,J.Mater.Sci.Technol.1997,13,113
    [4]M.Boutonnet,J.Kizling,Colloid and Surfaces,1982,5,209
    [5]J.Nagy,B.Multinuclear,J Colloid and Surfaces,1989,35,201
    [6]C.Tsang and A.Manthiram,J.Electrochem.Soc,1997,144,520
    [7]钟俊辉,电源技术,1997,21,174
    [8]S.Denis,E.Baudrin,F.Orsini,et al.J.Power Sources,1999,81-82,79
    [9]张立德,牟季美,纳米材料和纳米结构,科学出版社,2001
    [10]王世敏,许祖勋,傅晶,纳米材料制备技术,化学工业出版,2001。
    [11]R.R.He,M.Law,R.Fan,F.Kim,P.Yang,Nano Let.,2002,2,1109.
    [12]G.Wei,C.W.Nan,Y.Deng,et al.Chem.Mater.,2003,15,4436
    [13]J.Lu,P.Qi,Y.Peng,et al.,Chem.Mater.,2001,13,2169
    [14]M.Schaefer,C.Nather,N.Lehnert.,et al.,Inorg.Chem.,2004,43,2914
    [15]钱逸泰,谢毅,唐凯斌,中国科学院院刊,2001,1,26
    [16]S.Yu,Z.Han,J.Yang,et al.,Chem.Mater,1999,11,192
    [17]W.Wang,Y.Geng,P.Yan,et al.,J.Am.Chem.Soc.,1999,121,4062
    [18]A.I.Sidorov.J Opt Technol,1998,65,21
    [19]徐如人,庞文琴,无机合成与制备化学,高等教育出版社,2001,53
    [20]A.P.Torane,K.Y.Rajpure,C.H.Bhosale,Mater.Chem.Phys,1999,61,219
    [21]D.C.Yin,N.K.Xu,J.Y.Zhang,X.L.Zheng.J Phys D,1996,29,1051
    [22]O.Toshiyuki,I.Yasuhiro,R.K.Kenkyu.J.Photopolym Sci Technol,1997,10,211
    [23]沈俭—,化学学报,1994,52,858
    [24]M.Fievet,J.P.Lagier,MRS Bull.,1989,14,29
    [25]C.Ducamp-Sanguesa,M.Figlarz,J Solid State Chem.,1992,100,272.
    [26]Y.T.Qian,Q.W.Chen,Z.Y.Chen et al.,J.Mater.Chem.,1993,3,203
    [27]J.C.Valmalette,J.R.Gavarri.Materials Science and Engineering,1994,B54,168.
    [28]J.C.Valmalette,J.R.Gavarri,G.Vacquier,et al.US Application 1996,836,939
    [29]朱小英,金德江 中南民族学院学报(自然科学版),1997,16,23
    [30]尹大川,王猛,黄卫东。西北工业大学学报,1999,17,493
    [31]Z.P.Liu,S.Li,Y.Yang,Y.T.Qian et al.Adv.Mater.2003,15,1946
    [32]Z.P Liu,Y.Yang,J.B.Liang,Y.T.Qian et al.J.Phys.Chem.B,2003,107,12658
    [33]A.M.Morales,C.M.Lieber,Science,1998,279,208.
    [34]T.J.Trentler,W.E.B uhro et al,Science,1995,270,1791
    [35]W.Q.Han,S.S.Fan,Science,1997,277,1287.
    [36]G.M.Meng,L.D.Zhang et al,J.Mater.Sci.,1999,1,1255.
    [37]G.M.Meng,L.D.Zhang et al,J.Mater.Res,1998,13,2533.
    [38]J.Shen,Z.Li,Q.Yan,and Y.Chen,J.Phys.Chem.,1993,97,8504
    [39]A.Fert,L.Pi raux,J.Magn.Magn.Mater.1999,200,338.
    [40]X.Y.Chen,X.Wang,Z.H.Wang,J.X.Wan,J.W.Liu,Y.T.Qian,Nanotechnology 2004,15,1685.
    [41]彭俊峰 多种低维钒氧化物纳米材料的结构、性能及合成机理研究2005,5
    [42]P.A.Ckristian,F.J.DiSalvo,D.W.Murphy,U.S.Pat 1980,4228226
    [43]F.Theoblad,R.Cabala,J.Bernard,J.Solid State Chem.1976,17,31
    [44]J.R.Dahn,T.V.Buuren,U.V.Sacken.U.S.Pat,1990,4965150
    [45]W.Li,J.Dahn,D.S.Wainwright.Science,1994,264,1115
    [46]A.M.Morales,C.M.Lieber,Science,1998,279,208.
    [47]T.J.Trentler,W.E.Buhro et al,Science,1995,270,1791
    [48]R.N.Reddy,R.G.Reddy,Journal of Power Sources 2003,124,330
    [49]P.D.Yang,C.M.Li eber,J Mater.Res.,1997,12,2981.
    [50]J.Y.Dai,L.M.Lauerhaas,Chem.Phys.Lett.1996,258,547
    [51]J.H.Golden,Science,1996,273,782.
    [52]K.Hiruma,M.Yazawa,J.Appl.Phys.,1995,77,447.
    [53]M.Yazawa,M.Koguchi,Appl.Phys.Lett.1992,61,205
    [54]R.X.Yan,X.M.Sun,X.Wang et al,Chem.Eur.J,2005,11,2183
    [55]J.B.Goodenough,A.Hammett,Landolt-Bernstein New Series Group Ⅲ:Semiconductor,1984,17,129291
    [56]J.P.Zheng,T.R.Jow.Power Sources,1996,62,155
    [57]吴川,吴锋,陈实等。电池,2000,30,36
    [58]郭宁,何延春,邱家稳,钢铁钒钛,2003,24,61
    [59]娄天军,王天喜,王璐,河南科技学院学报(自然科学版),2007,35,2
    [60]张元广,陈友存,无机材料学报。2006,21,5
    [61]曹传宝,刘思远,吕瑞涛,李敬华,朱鹤荪。北京理工大学学报 2004,4,10
    [62]郑占丰,高学平,潘桂玲,鲍建莉,曲金秋,吴锋,宋德瑛 无机化学学报 2004,20,4
    [63]J.Livage,Chem.Mater.,1991,3,578
    [64] J. T. Wu, C. Shih, T. Guo, and K. Chen, J. Mater. Chem. 1997, 7, 2273
    
    [65] C.H. Hung, W.T. Whang, Mater. Chem.Phys. 2003, 82, 705
    
    [66] X.L. Li, T.L. Duan, X.Y. Zhu, Y.T. Qian, Mater.Lett. 2006, 60, 3350
    
    [67] X.L. Li, W.J. Li, X.Y Chen, C.W. Shi, Journal of Crystal Growth 2006, 297, 387
    
    [68] J.F.Xu, R.Czerw, S Websterand, D.L.Carroll, Appl.Phys.Let. 2002, 81, 1717
    
    [69]无机化学丛书(第八卷)镍分族/钒分族/铬分族,北京科技出版社,230
    
    [70] X.Wang, Y.D. Li, Chem.Eur.J, 2003, 9, 300
    
    [71] G.Andersson, Acta Chem.Scand. 1954, 8, 1599
    
    [72] G.Andersson, Acta Chem. Scand. 1956, 10, 623
    
    [73] T. Metsuishi, Jpn. J. Appl. Phys. 1967, 6, 1060
    
    [74] F.Theobald, Jess-Common Met. 1977, 53, 55
    
    [75] Y.Oka, T.Tao, N.Yamamoto, J. Solid State Chem. 1990, 86, 116
    
    [76] F.Theobald, R.Cabala, J.Bernald, J. Solid State Chem. 1977, 17, 431
    
    [77] D.Hagrman, J. Zubieta, C.J.Warren, L.M.Meyer, M.J.Treacy, R.C.Haushalter, J.Solid State Chem. 1998, 138, 178
    [78] Z. Gui, R. Fan, X. H. Chen, Y. C. Wu, Journal of Solid State Chemistry 2001, 157,250
    
    [79] S.A. Selim, Ch.A. Philip, R.Ch. Mikhait, Acta 1980, 36, 287
    [80] C.L.Onnerud, J.O.Thomas, J.Mater.Chem. 1995, 5, 1075
    [81] X.F.Duan, Y.Huang, Y.Cui, J.Wang, C.M.Lieber, Nature, 2001, 409, 66
    [82] M.Nath, S.Kar, A.K.Raychaudhuri, C.N.R.Rao, Chem.Phys.Lett. 2003, 368, 690
    [83] Y. Li, J. Wang, Z. Deng, Y. Wu, X. Sun, D. Yu, P. Yang, J. Am. Chem. Soc. 2001,123,9904
    
    [84] A.P. Alivisatos, Science 1996, 271, 933
    [85] M.E.Spahr, P.Stoschitzkj-Bitterli, R.Nesper, O.Haas, P.Novak,J. Eletrochem.Soc.1999, 146,2780
    [86] J.S. Braithwaite, C.R.A. Catlow, J.D. Gale, J.H. Harding, Chem. Mater. 1999, 11,1990
    [87] T. Kudo, Y. Ikeda, T. Watanabe, M. Hibino, M. Miyayama, H. Abe, K. Kajita,Solid State Ionics 2002, 152-153, 833
    [88] P.Liu, S.H.Lee, H.M.Chong, C.E.Tracy, J.R.Pitts, R.D.Smith, J. Electrochem. Soc.2002, 149, 76
    
    [89] C.Lampe-Onnerud, J.O.Thomas, M.Hardgrave, S.Y.de-Anderson, J. Electrochem.Soc. 1995, 142, 3648
    [90] I. Balberb, S. Trokman, J. Appl. Phys. 1977, 46, 2111
    
    [81] Z.W. Pan, Z.R. Dai, Z.L. Wang, Science 2001, 291, 1947
    
    [92] G.Z. Cao, Nanostructures and Nanomaterials: Synthesis, Properties, and Applications; Imperial College Press: (London) 2004.
    [93] G.Z. Cao, J. Phys. Chem. B 2004, 108, 19921
    [94] X.Chen, X.M.Sun, Y.D.Li, Inorg.Chem. 2002, 41, 4524
    [95] Y.J. Zhang, N.L. Wang, S.P. Gao, R.R. He, S. Miao, J. Liu, J. Zhu, X. Zhang,Chem. Mater. 2002, 14,3564
    
    [96] A.M. Kannan, A. Manthiram, Solid State Ionics 2003, 159, 265
    [97] L.Q.Mai, W.Chen, Q.Xu, Solid State Communications 2003, 126, 541
    [98] W. Chen, J.F. Peng, L.Q. Mai, H. Yu, Y.Y. Qi, Solid State Communications 2004,132,513.
    [99] L.F. Kong, Z.P. Liu, M.W. Shao, Q. Xie, W.C. Yu, Y.T. Qian, J. Solid State Chem. 2004, 177, 690.
    [100] F. Sediri, F. Touati, N. Gharbi, Materials Science and Engineering B, 2006, 129,251
    [101] L.S.Gao, X.Wang, L.F.Fei, M.R.Ji, H.G.Zheng, H.C.Zhang, T.Shen, K.Yang Journal of Crystal Growth, 2005, 281, 463
    [102] R.Kotz, M.Carlen, Electrochem.Acta 2000, 45, 2483
    [103] J.P.Zheng, T.R.Jow, J.Electrochem.Soc 1997, 144, 2417
    [104] S.Sarangapani, B.V.Tilak, C.P.Chen, J.Electrochem.Soc, 1996,143, 3791
    [105] S. Sarangapani, et al., J. Power Source 1990, 29, 355.
    [106] B.E. Conway, Electrochemical Supercapacitors, Kluwer Academic/ Plenum Publishers, New York, 1999
    
     [107] C. Leroux, G. Nihoul, Phys. Rev. B 1998, 57, 5111
    
     [108] D.W.Murphy, P.A.Christian, J.N.Carides, J.Electrochem.Soc, 1979, 126, 497
     [109] J.R. Dahn, T.V. Buuren, U. Von Sacken, US Patent 1990, 965,150
     [110] K.M.Abraham, J.L.Goldman, D.Dempsey, J.Electrochem.Soc, 1981, 128, 2493
     [111] J.P.Zheng, J. Huang, T.R.Jow, J.Electrochem.Soc, 1997, 144, 2026
     [112] R.N. Reddy, R.G. Reddy, Journal of Power Sources 2006, 156, 700
     [113] Z.J. Lao, K. Konstantinov , Y. Tournaire, S.H. Ng, G.X. Wang, H.K. Liu Journal of Power Sources 2006, 162, 1451.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700