InGaAs(Sb)近、中红外激光器材料与器件研究
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摘要
1.5-2.0μm近、中红外波段半导体激光器在通讯、测高、测距、遥感等方面有着广泛的应用。研究位于该波段的低维半导体量子激光光源,已经成为半导体研究领域中的国际前沿和热点之一。本论文主要围绕1.5-2.0μm近、中红外波段半导体激光器材料和器件开展了研究工作,通过系统深入地开展低维In(Ga)As量子点激光器材料、中红外锑化物量子阱In(Al)GaAsSb激光器材料的MBE外延生长技术研究,探索了1.5-2.0μm近、中红外波段In(Ga)As(Sb)氐维量子尺寸(量子点、量子阱)激光器材料制备技术。通过优化材料质量,深入开展工艺研究,制备了位于该波段的半导体激光器件,为进一步开展近、中红外波段半导体激光器材料和器件研究提供了基础材料和技术支持。
主要开展的研究内容如下：
1)在1.5gm波段,深入开展了外延生长In(Ga)As/GaAs量子点激光器材料研究,分析了生长温度、生长速度、V/Ⅲ族束流比、掺杂浓度以及量子点密度、形状等对生长质量和发光效率的影响；首次采用Sb敏化和InGaAs应变减小层技术拓展波长的同时,优化生长速率和退火温度,在有源区优化有效p型掺杂以及采用分别限制渐变折射率AlGaAs限制层的设计,分析了结构参数对量子点结构的光学性质和电学性质的影响。
2)在1.5-2gm波段,主要开展了InGaAs(Sb)的优化生长研究。优化材料生长条件和结构设计,开展高质量、高发光效率的InGaAsSb/AlGaAsSb量子阱生长研究,提高有源区增益、降低激射阈值;获得了高均匀性、高晶体质量的InGaAsSb/AlGaAsSb材料,获取了提高量子阱结构生长质量的技术手段。
3)深入开展了GaAs基量子点,GaSb基量子阱材料的器件工艺研究。
(1)解决了GaSb基材料的刻蚀、钝化和欧姆接触等关键工艺技术问题；
(2)评价和表征了器件特性,分析了影响器件阈值、效率等因素。
4)开展了位于1.5-2μm波段低维In(Ga)As(Sb)量子点激光器材料、中红外锑化物量子阱In(Al)GaAsSb激光器技术研究。
(1)系统研究了影响量子点的生长因素。开展了采用多层量子点在量子阱中(DWELL)结构的激光器研究。为了提高激光器有源区量子点的均匀性,增加有效激射量子点的数目,采用多层量子点结构,通过选择适当的量子点间隔层厚度,利用存在于量子点层之间应力的相互作用,使量子点在垂直方向上相互吸引,形成大尺寸量子有源区的“应变人工控制”,不但增大了量子点的体密度,还有效地改善了量子点分布的均匀性。制备了波长位于1.5gm多层量子激光器,器件测试结果表明,随着温度从20℃升高到60℃,在60℃时激光器仍可以实现连续激射,输出功率20mW左右,波长为1.5μm。
(2)采用分子束外延(Molecular Beam Epitaxy,MBE)生长技术,制备了波长位于1.6-2.3μm的InGaAsSb/AlGaAsSb多量子阱结构材料。在此基础上制备的2.2μm波长激光器,测得激光器件的阈值电流密度为187A/cm2,斜率效率为0.2W/A,室温下连续输出功率达到320mW。波长随注入温度的变化率约为0.28nm/℃。当温度从20℃升高到60℃时,斜率效率由20.1%减小到10.8%。
以上器件结果表明,采用MBE外延生长低维In(Ga)As量子点激光器材料、中红外In(Al)GaAsSb锑化物量子阱激光器材料,为1.5-2μm波段近、中红外半导体材料和激光器研究提供了新的有效方法和研究思路,对进一步开展近、中红外波段半导体激光器研究及应用具有十分重要意义。
Low-dimensional semiconductor quantum laser located in the1.5-2μm near-and mid-infrared wavelength range has become one of the international frontier areas. These devices are especially attractive and enormous interest for the development of the practical realization of optoelectronic devices operating in the1.5-2μm wavelength range, with potential applications in a wide variety of areas including communications, altimetry, ranging, optical sensing and monitoring.
The present research work focuses on1.5-2μm quantum dots (QDs) and multiple quantum wells (MQWs) materials and devices. The active layers were in the first case low-dimensional burried In(Ga)As QDs. and in the second case MBE-grown mid-infrared antimonide MQWs In(Al)GaAsSb emitting in the1.5-2.0μm near-infrared band. By optimizing the quality of materials and the growth technology, we prepared the high quality antimonide laser structures and devices, which is conducive for further research for near-and mid-infrared semiconductor lasers development and a wide range of applications.
The present research work mainly focuses on the following.
First, we carried out the epitaxial growth of In(Ga)As/GaAs QDs laser material emitting in the1.5μm band, by optimizing the growth temperature, growth rate, the Ⅴ/Ⅲ beam flux, the doping concentration as well as the QDs density and shape influencing the growth quality and the photoluminescence efficiency. The addition of Sb into InGaAs decreases the strain magnitude, lengthens the wavelength. This technology also allows the optimization of the growth rate, the annealing temperature, and the effective p-type doping of the active region. We also could limit the gradient of the high-refractive index AlGaAs cladding layer and other important parameters. We analyzed the impact of the structural parameters of the optical and electrical properties of the quantum dot structure.
Second, we optimized the growth conditions of InGaAs(Sb) QWs emitting in the1.5-2μm band to improve the layer quality. We also optimized the structure design of our InGaAsSb/AlGaAsSb structures, achieving high photoluminescence efficiency, significantly increasing the gain of the active region and reducing the lasing threshold. We were able to achieve highly uniform, high crystal quality InGaAsSb/AlGaAsSb devices.
Third, we performed detailed materials treatment study for GaAs QD based and GaSb QW-based laser materials. To do this we solved several technological issues related to GaSb-based materials, i.e. etching, passivation and fabrication of ohmic contacts. We were then able to evaluate and characterize the devices, and analyze the threshold, efficiency and other factors.
Fourth, we grew1.5-2μm wave-band low-dimensional In(Ga)As(Sb) quantum dot laser materials, as well as mid-infrared quantum well antimonide In(Al)GaAsSb lasers,
i) We performed a systematic study on the growth factors affecting the quantum dots. We grew and fabricated multi-layer quantum dots-in-well laser structure (DWELL), in order to improve the uniformity of the quantum dots used as laser active region, and to increase the number of quantum dots effectively contributing to lasing. The use of multilayer quantum dot structures allows the stacking of QDs in the vertical direction via the stress interaction existing between the QD layers. An appropriate choice of the thickness of the QDs spacer layer not only increases the QDs bulk density, but also effectively improves the QD size and emission distribution uniformity. Our1.5μm wavelength multilayer lasers are able to achieve room temperature continuous lasing from20℃to60℃, with an output power as high as20mW with a1.5μm emission.
ii) Using MBE growth, InGaAsSb/AlGaAsSb multiple quantum well structures were prepared with an emission wavelength located in the1.6-2.3μm range. The laser threshold current A device emitting at2.2μm wavelength was measured at187A/cm2, with a slope efficiency of0.2W/A. The maximum output power was320mW in continuous mode at room temperature. The lasing wavelength shifts with temperature by about0.28nm/℃. When the temperature is increased from20℃to60℃, the slope efficiency decreases from20.1%to10.8%.
This thesis systematically studied low-dimensional In(Ga)As quantum dot, as well as MBE-grown mid-infrared antimonide quantum well In(Al)GaAsSb as laser active media. We achieved semiconductor lasing in the1.5-2μm infrared band. Our research provides a new way of thinking and effective work methods, which is of great significance for further studies related to mid-infrared semiconductor lasers applications. The methods employed and emphasized in this work proved very effective, which brings valuable results and is expected to find wide applications in the field of mid-infrared wavelength range.
主要开展的研究内容如下：
1)在1.5gm波段,深入开展了外延生长In(Ga)As/GaAs量子点激光器材料研究,分析了生长温度、生长速度、V/Ⅲ族束流比、掺杂浓度以及量子点密度、形状等对生长质量和发光效率的影响；首次采用Sb敏化和InGaAs应变减小层技术拓展波长的同时,优化生长速率和退火温度,在有源区优化有效p型掺杂以及采用分别限制渐变折射率AlGaAs限制层的设计,分析了结构参数对量子点结构的光学性质和电学性质的影响。
2)在1.5-2gm波段,主要开展了InGaAs(Sb)的优化生长研究。优化材料生长条件和结构设计,开展高质量、高发光效率的InGaAsSb/AlGaAsSb量子阱生长研究,提高有源区增益、降低激射阈值;获得了高均匀性、高晶体质量的InGaAsSb/AlGaAsSb材料,获取了提高量子阱结构生长质量的技术手段。
3)深入开展了GaAs基量子点,GaSb基量子阱材料的器件工艺研究。
(1)解决了GaSb基材料的刻蚀、钝化和欧姆接触等关键工艺技术问题；
(2)评价和表征了器件特性,分析了影响器件阈值、效率等因素。
4)开展了位于1.5-2μm波段低维In(Ga)As(Sb)量子点激光器材料、中红外锑化物量子阱In(Al)GaAsSb激光器技术研究。
(1)系统研究了影响量子点的生长因素。开展了采用多层量子点在量子阱中(DWELL)结构的激光器研究。为了提高激光器有源区量子点的均匀性,增加有效激射量子点的数目,采用多层量子点结构,通过选择适当的量子点间隔层厚度,利用存在于量子点层之间应力的相互作用,使量子点在垂直方向上相互吸引,形成大尺寸量子有源区的“应变人工控制”,不但增大了量子点的体密度,还有效地改善了量子点分布的均匀性。制备了波长位于1.5gm多层量子激光器,器件测试结果表明,随着温度从20℃升高到60℃,在60℃时激光器仍可以实现连续激射,输出功率20mW左右,波长为1.5μm。
(2)采用分子束外延(Molecular Beam Epitaxy,MBE)生长技术,制备了波长位于1.6-2.3μm的InGaAsSb/AlGaAsSb多量子阱结构材料。在此基础上制备的2.2μm波长激光器,测得激光器件的阈值电流密度为187A/cm2,斜率效率为0.2W/A,室温下连续输出功率达到320mW。波长随注入温度的变化率约为0.28nm/℃。当温度从20℃升高到60℃时,斜率效率由20.1%减小到10.8%。
以上器件结果表明,采用MBE外延生长低维In(Ga)As量子点激光器材料、中红外In(Al)GaAsSb锑化物量子阱激光器材料,为1.5-2μm波段近、中红外半导体材料和激光器研究提供了新的有效方法和研究思路,对进一步开展近、中红外波段半导体激光器研究及应用具有十分重要意义。
Low-dimensional semiconductor quantum laser located in the1.5-2μm near-and mid-infrared wavelength range has become one of the international frontier areas. These devices are especially attractive and enormous interest for the development of the practical realization of optoelectronic devices operating in the1.5-2μm wavelength range, with potential applications in a wide variety of areas including communications, altimetry, ranging, optical sensing and monitoring.
The present research work focuses on1.5-2μm quantum dots (QDs) and multiple quantum wells (MQWs) materials and devices. The active layers were in the first case low-dimensional burried In(Ga)As QDs. and in the second case MBE-grown mid-infrared antimonide MQWs In(Al)GaAsSb emitting in the1.5-2.0μm near-infrared band. By optimizing the quality of materials and the growth technology, we prepared the high quality antimonide laser structures and devices, which is conducive for further research for near-and mid-infrared semiconductor lasers development and a wide range of applications.
The present research work mainly focuses on the following.
First, we carried out the epitaxial growth of In(Ga)As/GaAs QDs laser material emitting in the1.5μm band, by optimizing the growth temperature, growth rate, the Ⅴ/Ⅲ beam flux, the doping concentration as well as the QDs density and shape influencing the growth quality and the photoluminescence efficiency. The addition of Sb into InGaAs decreases the strain magnitude, lengthens the wavelength. This technology also allows the optimization of the growth rate, the annealing temperature, and the effective p-type doping of the active region. We also could limit the gradient of the high-refractive index AlGaAs cladding layer and other important parameters. We analyzed the impact of the structural parameters of the optical and electrical properties of the quantum dot structure.
Second, we optimized the growth conditions of InGaAs(Sb) QWs emitting in the1.5-2μm band to improve the layer quality. We also optimized the structure design of our InGaAsSb/AlGaAsSb structures, achieving high photoluminescence efficiency, significantly increasing the gain of the active region and reducing the lasing threshold. We were able to achieve highly uniform, high crystal quality InGaAsSb/AlGaAsSb devices.
Third, we performed detailed materials treatment study for GaAs QD based and GaSb QW-based laser materials. To do this we solved several technological issues related to GaSb-based materials, i.e. etching, passivation and fabrication of ohmic contacts. We were then able to evaluate and characterize the devices, and analyze the threshold, efficiency and other factors.
Fourth, we grew1.5-2μm wave-band low-dimensional In(Ga)As(Sb) quantum dot laser materials, as well as mid-infrared quantum well antimonide In(Al)GaAsSb lasers,
i) We performed a systematic study on the growth factors affecting the quantum dots. We grew and fabricated multi-layer quantum dots-in-well laser structure (DWELL), in order to improve the uniformity of the quantum dots used as laser active region, and to increase the number of quantum dots effectively contributing to lasing. The use of multilayer quantum dot structures allows the stacking of QDs in the vertical direction via the stress interaction existing between the QD layers. An appropriate choice of the thickness of the QDs spacer layer not only increases the QDs bulk density, but also effectively improves the QD size and emission distribution uniformity. Our1.5μm wavelength multilayer lasers are able to achieve room temperature continuous lasing from20℃to60℃, with an output power as high as20mW with a1.5μm emission.
ii) Using MBE growth, InGaAsSb/AlGaAsSb multiple quantum well structures were prepared with an emission wavelength located in the1.6-2.3μm range. The laser threshold current A device emitting at2.2μm wavelength was measured at187A/cm2, with a slope efficiency of0.2W/A. The maximum output power was320mW in continuous mode at room temperature. The lasing wavelength shifts with temperature by about0.28nm/℃. When the temperature is increased from20℃to60℃, the slope efficiency decreases from20.1%to10.8%.
This thesis systematically studied low-dimensional In(Ga)As quantum dot, as well as MBE-grown mid-infrared antimonide quantum well In(Al)GaAsSb as laser active media. We achieved semiconductor lasing in the1.5-2μm infrared band. Our research provides a new way of thinking and effective work methods, which is of great significance for further studies related to mid-infrared semiconductor lasers applications. The methods employed and emphasized in this work proved very effective, which brings valuable results and is expected to find wide applications in the field of mid-infrared wavelength range.
引文
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