空气氧化法制备VO_2及掺钨氧化钒薄膜的研究
|
摘要
VO_2是一种相变型氧化物,具有金属一半导体转变的相变特性,其相变时具有电学和光学突变性质,这一特性使VO_2薄膜在众多领域,如自动调节温度的智能窗、激光防护薄膜、红外探测仪、光学数据存储材料等具有好的应用前景。钒可以处于相邻的价态且价态多达十几种,这使得VO_2薄膜的制备对工艺要求比较苛刻,以目前的制备手段来看,VO_2的应用仅仅局限于少数领域,并且成本昂贵。因此,如何进一步降低其工艺难度和制备成本是人们所关心的。
纯VO_2的相变温度点位于68℃附近,这个温度点略高于室温,也局限了它的应用范围。大量研究表明,通过掺杂手段可以降低其相变温度点,因此,在发展VO_2制备工艺的时候,人们也会关心这种工艺是否能适用于掺杂。
本文利用空气对金属钒薄膜进行氧化,通过控制温度和氧化时间,制备出了高纯度VO_2薄膜。同时为了证明这种制备工艺对掺杂有效,我们用金属钨对薄膜进行掺杂实验,获得了较好的效果,同时通过分析得出了一些有意义的掺杂手段。
第二章主要讨论了在重复传统溅射法实验时遇到的问题,并提出本文的技术路线。
第三章主要介绍空气氧化法制备VO_2薄膜,分析了其氧化过程,寻求到了适合制备VO_2薄膜的氧化温度范围,并介绍了如何控制氧化时间。另外,对金属钒薄膜的致密度如何影响VO_2薄膜的性能做了些研究。
第四章主要介绍掺钨实验,在金属钒薄膜中加入单层钨膜制备出钨钒合金膜,然后通过氧化使钨原子在薄膜中进行热扩散,从而达到掺杂目的。通过分析单层杂质膜对掺杂量的局限性,提出了利用多层杂质膜的手段来提高掺杂量。
Vanadium oxide(VOP_2) is a phase change oxide.It has metal-insulator transition(MIT) property,which shows abrupt changes in electrical and optical properties.VO_2 thin film have a bright application future in many fields such as intellectual window which can change the temperature automatically,laser protective film,infrared detector,optical data shortage material. There are over ten valence states of Vanadium.So the process to fabricate VO_2 thin film is very rigor.The techniques to fabricate VO_2 nowadays are just in a few fields and the cost is very high. To simplifies the process and reduce the cost is now attracted many attentions.
The phase change temperature of pure Vanadium oxide(VO_2) is around 68℃,a little higher than room temperature,which localized it's application field.Many researches have proved that impurity doping can reduce the phase change temperature.So to develop a VO_2 fabricating technique that can suitable for impurity doping has become the hot research topic.
In this paper,high purity VO_2 thin film was obtained though oxidizing the metal Vanadium thin film in air and controlling the oxidizing time and temperature.In order to know if this technique is also suitable for impurity doping,Wolfram is doping into the film and obtained a good effect.A effective doping technique was obtained through analyzing.
The second part of this paper discussed the problems confronted in repeating the traditional sputtering method.And the technique method of this paper was pointed out.
The third part of this paper introduced the air oxidizing method to fabricate VO_2 thin film. The oxidizing process is analyzed and the proper oxidizing temperature to fabricate VO_2 thin film is obtained.The method to control oxidizing time is also introduced.In addition,the effect of the density of the metal Vanadium to the property of VO_2 thin film was investigated.
Wolfram doping experiment is introduced in the fourth part of this paper.Wolfram-Vanadium -metal(W-V-metal) film is firstly obtained by doping Wolfram into Vanadium-metal and thermal diffusion of Wolfram during oxidizing.The method to increase the doping content by using multilayer impurity film was pointed out by analyzing the effect of monolayer impurity film to the doping content.
纯VO_2的相变温度点位于68℃附近,这个温度点略高于室温,也局限了它的应用范围。大量研究表明,通过掺杂手段可以降低其相变温度点,因此,在发展VO_2制备工艺的时候,人们也会关心这种工艺是否能适用于掺杂。
本文利用空气对金属钒薄膜进行氧化,通过控制温度和氧化时间,制备出了高纯度VO_2薄膜。同时为了证明这种制备工艺对掺杂有效,我们用金属钨对薄膜进行掺杂实验,获得了较好的效果,同时通过分析得出了一些有意义的掺杂手段。
第二章主要讨论了在重复传统溅射法实验时遇到的问题,并提出本文的技术路线。
第三章主要介绍空气氧化法制备VO_2薄膜,分析了其氧化过程,寻求到了适合制备VO_2薄膜的氧化温度范围,并介绍了如何控制氧化时间。另外,对金属钒薄膜的致密度如何影响VO_2薄膜的性能做了些研究。
第四章主要介绍掺钨实验,在金属钒薄膜中加入单层钨膜制备出钨钒合金膜,然后通过氧化使钨原子在薄膜中进行热扩散,从而达到掺杂目的。通过分析单层杂质膜对掺杂量的局限性,提出了利用多层杂质膜的手段来提高掺杂量。
Vanadium oxide(VOP_2) is a phase change oxide.It has metal-insulator transition(MIT) property,which shows abrupt changes in electrical and optical properties.VO_2 thin film have a bright application future in many fields such as intellectual window which can change the temperature automatically,laser protective film,infrared detector,optical data shortage material. There are over ten valence states of Vanadium.So the process to fabricate VO_2 thin film is very rigor.The techniques to fabricate VO_2 nowadays are just in a few fields and the cost is very high. To simplifies the process and reduce the cost is now attracted many attentions.
The phase change temperature of pure Vanadium oxide(VO_2) is around 68℃,a little higher than room temperature,which localized it's application field.Many researches have proved that impurity doping can reduce the phase change temperature.So to develop a VO_2 fabricating technique that can suitable for impurity doping has become the hot research topic.
In this paper,high purity VO_2 thin film was obtained though oxidizing the metal Vanadium thin film in air and controlling the oxidizing time and temperature.In order to know if this technique is also suitable for impurity doping,Wolfram is doping into the film and obtained a good effect.A effective doping technique was obtained through analyzing.
The second part of this paper discussed the problems confronted in repeating the traditional sputtering method.And the technique method of this paper was pointed out.
The third part of this paper introduced the air oxidizing method to fabricate VO_2 thin film. The oxidizing process is analyzed and the proper oxidizing temperature to fabricate VO_2 thin film is obtained.The method to control oxidizing time is also introduced.In addition,the effect of the density of the metal Vanadium to the property of VO_2 thin film was investigated.
Wolfram doping experiment is introduced in the fourth part of this paper.Wolfram-Vanadium -metal(W-V-metal) film is firstly obtained by doping Wolfram into Vanadium-metal and thermal diffusion of Wolfram during oxidizing.The method to increase the doping content by using multilayer impurity film was pointed out by analyzing the effect of monolayer impurity film to the doping content.
引文
[1]C.H.Griffiths and H.K.Eastwood.Infulence of stoichiometry on the metalsemiconductor transition in vanadium dioxide[J],Appl Phys,1974,45(5):2201.
[2]G.V.Jorgenson,and J.C lee,Doped vanadium dioxide for optical switching flims.Solar Energy Materials,1986,14 205-214.
[3]S.M.Babulanam,G.A Eriksson,and C.G.Grnaqvist,Thermochromatic VO_2films for energy-effcient windows.Solar Energy Materials 1987,16-347-363.
[4]王骐,范金荣,红外制导武器抗激光致盲技术纵横谈[J],现代防御技术,2002,29(6):47-50.
[5]S.Q.Xu,H.P.Ma,X.S.Dai,et al,.Switching properties and phase transition mechanism of Mo~(6+) doped vanadium dioxide thin films[J],Phys.Lett,2003,20(1):148.
[6]R.T.Kivaisi,M.Samiji.Optical and electrical properties of vanadium dioxide films prepared under optimized RF sputtering conditions[J].Solar Energy Materials & Solar Cells,1999,57:141.
[7]T.S Lee,J.S Shin.Feasibility study on low-resolution un-cooled thermal imagers for home-security applications[J].Opt.Engineering,2000:1431-1440.
[8]D.Kucharczyk,T.Niklewski.Accurate X-ray determination of the lattice parameter and the thermal expansion coefficients of VO_2 near the transition temperature[J].J Appl Cryst,1979,12:370.
[9]J.Z Cui,W.S Jiang.Structure characterization of vanadium oxide thin films prepared by magnetron sputtering methods[J].Applied Structure Science,1998,133:225-229.
[10]F.J Morin.Oxides which show a metal-to-insulator transition at the neel room temperature[J].Phy.Rev.Lett.1959,3(1):34-36.
[11]R.Heckingbottom and J.W.Linett,Structures and a Two-Band model for the system V_(1-x)CrXO_2.Nature(london) 1962,194:678.
[12]A.Haras,M.Wiko.Electronic properties of the VO_2(011) surface:density functional cluster calculations[J],Surface Science,2001,491:77-87.
[13]J.B.Goodengough.The two components of the Crystallographic Transition in VO_2[J],Solid State Chem,1971,3:450-490.
[14]T.Christmann,B.Felde,W,Niessner,et al,.Themachromic VO_2 thin films studied by photoelectron spectroscopy,Thin solid films,1996,287:134-138.
[15]P.Joachim,Schreckenbach,P Strauch.Microstructure study of amorphous vanadium oxide films[J],Applied Surface Science,1999,143:6-10.
[16]F.Masaharu,S.Zembutsu,S.Miyazawa.Preparation of VO2 Film and Its Direct Optical Bit Recording Characteristics[J],Appl Optics,1983,22(22):265-268.
[17]R.T.Kivaisi,M.Samiji.Optical and electrical properties of vanadium dioxide films prepared under optimized RF sputtering conditions[J],Solar energy materials and solar cells,1999,57(2):141-152.
[18]M Nagashima,H Wada.Oxygen deficiency effect of VO_2 thin films prepared by laserablation[J],Journal of materials research,1997,12(2):416-422.
[19]F.Guinneton,L.Sauquesb,J.C.Valmalette,et al,.Comparative study between nanocrystalline powder and thin film of vanadium dioxide VO_2:electrical and infrared properties[J],Phys Chem of Solids,2001,62:1229-1238.
[20]J.F.De Natele,P.J.Hood,A.B.Harker.Formation and characterization of grain-oriented VO_2 thin films.[J],Appl Phys,1989,66:5844.
[21]M.Borek,F.Qian,V.Nagabushnam,et al.Pulsed laser deposition of oriented VO_2thin flims on R-cut Sapphire substrates[J].Appl Phys lett,1993,63:3288.
[22]D.P.Platlow,S.R.Gukovich,K.C.Radford,et al.[J].J Appl Phys,1991,70:443.
[23]许昊,邱家稳,赵印中.VO_2薄膜及电学开关特性[J],真空科学与技术.2001,21(6):477.
[24]单凡,黄祥成.二氧化钒薄膜的光学特性及应用前景[J],应用光学,1996,17(2):39-42.
[25]刘金城,鲁建业,田雪松等.二氧化钒薄膜研究的最新进展[J],哈尔滨工业大学学报,2002,34(4):570-572.
[26]陈长琦,方应翠,朱武等.二氧化钒相变分析及应用[J],真空,2001,(6):9-13.
[27]卢亚雄,张寿康.二氧化钒多层膜的光阀作用[J],红外与激光技术,1994,(1):31-32.
[28]方应翠,陈长琦,朱武等.二氧化钒在智能窗方面应用研究[J],真空,2003,2:16-18.
[29]M.H.Lee Jun-Seok.Cho.Better thermochromic glazing of windows with anti-reflection coating[J],Thin Solid Films,2000,365(1):5-6.
[30]Moon-Hee Lee.Thermochromic glazing of windows with better luminous solar transmittance[J],Solar Energy Materials and Solar Cell,2002,71:537-540.
[31]付伟.激光致盲武器[J],光的世界,1999,12(2):28-29.
[32]付伟.对激光致盲的防护与对抗[J],现代军事,1995,(3):54-55.
[33]牛燕雄,张雏,周增惠.低能激光武器的防护技术[J],光学技术,1998,(1):89-92.
[34]胡江华,周建勋,张保民.战场激光防护技术[J],光学技术,1995,(3):36-39.
[35]施德恒,许启富.基于光学原理的激光防护镜近况[J],光学技术,1999,(4):16-20.
[36]白光,吉禾.用VO2反射镜对激光振荡脉冲前沿整形[J],激光与光电子学进展,1999,10:23-26.
[37]J.S.Orr.Gordon H.Vanadium dioxide protective[R],Report No:ADA212018,1989
[38]袁宁一,李金华,林成鲁.氧化钒薄膜的结构、性能及制备技术的相关性[J],功能材料,2001,32(6):572-575.
[39]D.Zintu,G Tosone,A.Mercuri.Dual ion beam sputtering vanadium dioxide microbolometers by surface micromachining[J],Infrared Physics and Technology,2002,43:245-250.
[40]R.J.Herring,P.E.Howard.Design and performance of the ultra 320×240uncooled focal plane array and sensor[J],SPIE,1996,2746:2-12.
[41]I.H.Jerom.F.Picard,N.R.Swart,et al,.Micromachined uncooled VO2-based IR bolometer arrays[J],SPIE,1996,2746:60-71.
[42]陈长虹,易新建,熊笔峰.基于VO_2薄膜非致冷红外探测器光电响应研究[J], 物理学报,2001,50(3):450-452.
[43]Hakim M O,Babulanam S.M.and Granqvist C.G.Electromechnical properties of VO2 thin film on polyimide substrate[J],Thin Solid Films,1988,(158):L49-L52.
[44]O.P.Konovalova,A.I.Sidorov.Interference systems of controllable mirrors based on vanadium dioxide for the spectral range 0.6-10.6μm.[J],Journal of optical technology,1999,66(5):13-2148.
[45]F.Cardillo Case.Modifications in the phase transition properties of predeposited VO_2 films[J],J.Vac.Sci.Technol,1984,A2(4):1509-1512.
[46]Katsumi Kuwabara,Shoichi Lchikawa,Kohzo Sugiyama.Electrchromic display device within organic Lon Exchanger[J],Electrochem.Soc,1988,135(10):2432-2436.
[47]Chain E E.Optical properties of vanadium dioxide and vanadium pentoxide thin film[J],Appl.Opt,1991,30(19):2782-2787.
[48]M.Nagashima,H.Wada.Near infrared optical properties of laser ablated VO_2thin films by ellipsometry[J],Thin Solid films.1998,19:1883.
[49]Masaharu Fukuma,Sakea Zembutsu,Shintaro Miyazawa.Preparation of VO_2 thin films and its direct optical bit recording characteristics[J],Applied Optics,1983,22(2):265-268.
[50]F.C.Case,Simple resistance model fit to the oxidation of a vanadium film into VO.[J].Vac.Sci,Techol.A,1988,6(1):123.
[51]K.Okimura,N.Kubo.Growth of VO_2 films with metal-insulator transition on silicon substrates in inductively coupled plasma-assisted sputtering.Thin Solid Films 2007,515:4992-4995.
[52]S.Saitzek et al.,VO_2 thin films deposited on silicon substrates from V_2O_5target:limits in optical switching properties and modeling,Thin solid films 2007,10.1016.
[53]Anibal Gavini,Clarence C.Y.K wan,P.R.B.1972,5(8):3138.
[54]K.R.Speck,M.E.Sherwin,R.S Potember.Vanadium dioxide films grown from vanadium tetra-isopropoxide by the sol-gel Process[J],Thin Solid Films,1988, 165:317-322
[55]P.Mei,X.S Chen,et al,.Properties of VO_2 thin film prepared with precursor VO(acac)_2,J.Crys.Growth,2004,265:121-126.
[56]H.K.Kim,H.You,R.P.Chiarello,et al,Continuous orientational ordering transition of carbon monoxide on graphite.Phys.Rev.B,1993,47(19):12900.
[57]Y Muraoka,Y Ueda,Z Hiroi.Large modification of the metal-insulator transition temperature in strained VO_2 films grown on TiO_2 substrates[J],Journal of Physics and Chemistry of Solids,2002,63:965-967.
[58]M.L,F.Barard,T.G.Reynolds.J.Sol.Sta.Chem.3484-489,1971.
[59]W.L Song and X.G Fu.J.Matt.Sci.Lett.15(1996) 856-857.
[60]R.M.Bowman,J.M.Gregg.VO2 thin films:Growth and the effect of applied strain on the resistance[J].J Mater Sci 1998,9(3):187-191.
[61]A.Stanley Lawton.Effect of Tungsten and Molybdenum Doping on the Semiconductor -Metallic Transition in Vanadium Dioxide Produced By Evaporation Decomposition of Solutions and Hydrogen Reduction.[J],J Am Ceram Soc,1995,78(1):238-240.
[62]W.Burkhardt,T.Christmann,B.K.Meyer B,et al.W and F-doped films studied by photoelectron spectrometry[J],Thin Solid Films,1999,345:229-235.
[63]W.Burkhardt,T.Christmann,S.Franke,et al.Tungsten and fluorine co-doping of VO2 films[J],Thin Solid Films,2002,402:226-231.
[64]M.L.F,T.C.Reynolds,M.Vlasse,et al,.Preparation and Properries of the Oxyflouride SystemsV_2O_(5-x) and VO_(2-x)F_x[J],Journal of Solid State Chemistry,1991,3:484-489.
[65]G.H.Fu et al.,Annealing effects on VO_2 thin films deposited by reactive sputtering.Thin Solid Films 2006,515:2519-2522.
[66]洪广言《无机固体化学》 科学出版社2002,P:204.
[67]W.Burkhardt,et al.,W-and F-doped VO_2 films studied by photocelectron spectrometry,Thin Solid Films,345(1999) 229.
[68]P.Jin,S.T anemura,Tailoring of Luminous Transmittance upon Swithcing for Thermochromic VO_2 films by thickness control.Jpn.J.Appl.Phys,34(1995) 2459.
[69]W.Burkhardt,et al,.Molydenum-doped vanadium dioxide coatings on glass produced by the aqueous sol-gel method.Thin Solid Films 2002,402:226-231.
[70]洪广言《无机固体化学》 科学出版社 2002,P:214.
[2]G.V.Jorgenson,and J.C lee,Doped vanadium dioxide for optical switching flims.Solar Energy Materials,1986,14 205-214.
[3]S.M.Babulanam,G.A Eriksson,and C.G.Grnaqvist,Thermochromatic VO_2films for energy-effcient windows.Solar Energy Materials 1987,16-347-363.
[4]王骐,范金荣,红外制导武器抗激光致盲技术纵横谈[J],现代防御技术,2002,29(6):47-50.
[5]S.Q.Xu,H.P.Ma,X.S.Dai,et al,.Switching properties and phase transition mechanism of Mo~(6+) doped vanadium dioxide thin films[J],Phys.Lett,2003,20(1):148.
[6]R.T.Kivaisi,M.Samiji.Optical and electrical properties of vanadium dioxide films prepared under optimized RF sputtering conditions[J].Solar Energy Materials & Solar Cells,1999,57:141.
[7]T.S Lee,J.S Shin.Feasibility study on low-resolution un-cooled thermal imagers for home-security applications[J].Opt.Engineering,2000:1431-1440.
[8]D.Kucharczyk,T.Niklewski.Accurate X-ray determination of the lattice parameter and the thermal expansion coefficients of VO_2 near the transition temperature[J].J Appl Cryst,1979,12:370.
[9]J.Z Cui,W.S Jiang.Structure characterization of vanadium oxide thin films prepared by magnetron sputtering methods[J].Applied Structure Science,1998,133:225-229.
[10]F.J Morin.Oxides which show a metal-to-insulator transition at the neel room temperature[J].Phy.Rev.Lett.1959,3(1):34-36.
[11]R.Heckingbottom and J.W.Linett,Structures and a Two-Band model for the system V_(1-x)CrXO_2.Nature(london) 1962,194:678.
[12]A.Haras,M.Wiko.Electronic properties of the VO_2(011) surface:density functional cluster calculations[J],Surface Science,2001,491:77-87.
[13]J.B.Goodengough.The two components of the Crystallographic Transition in VO_2[J],Solid State Chem,1971,3:450-490.
[14]T.Christmann,B.Felde,W,Niessner,et al,.Themachromic VO_2 thin films studied by photoelectron spectroscopy,Thin solid films,1996,287:134-138.
[15]P.Joachim,Schreckenbach,P Strauch.Microstructure study of amorphous vanadium oxide films[J],Applied Surface Science,1999,143:6-10.
[16]F.Masaharu,S.Zembutsu,S.Miyazawa.Preparation of VO2 Film and Its Direct Optical Bit Recording Characteristics[J],Appl Optics,1983,22(22):265-268.
[17]R.T.Kivaisi,M.Samiji.Optical and electrical properties of vanadium dioxide films prepared under optimized RF sputtering conditions[J],Solar energy materials and solar cells,1999,57(2):141-152.
[18]M Nagashima,H Wada.Oxygen deficiency effect of VO_2 thin films prepared by laserablation[J],Journal of materials research,1997,12(2):416-422.
[19]F.Guinneton,L.Sauquesb,J.C.Valmalette,et al,.Comparative study between nanocrystalline powder and thin film of vanadium dioxide VO_2:electrical and infrared properties[J],Phys Chem of Solids,2001,62:1229-1238.
[20]J.F.De Natele,P.J.Hood,A.B.Harker.Formation and characterization of grain-oriented VO_2 thin films.[J],Appl Phys,1989,66:5844.
[21]M.Borek,F.Qian,V.Nagabushnam,et al.Pulsed laser deposition of oriented VO_2thin flims on R-cut Sapphire substrates[J].Appl Phys lett,1993,63:3288.
[22]D.P.Platlow,S.R.Gukovich,K.C.Radford,et al.[J].J Appl Phys,1991,70:443.
[23]许昊,邱家稳,赵印中.VO_2薄膜及电学开关特性[J],真空科学与技术.2001,21(6):477.
[24]单凡,黄祥成.二氧化钒薄膜的光学特性及应用前景[J],应用光学,1996,17(2):39-42.
[25]刘金城,鲁建业,田雪松等.二氧化钒薄膜研究的最新进展[J],哈尔滨工业大学学报,2002,34(4):570-572.
[26]陈长琦,方应翠,朱武等.二氧化钒相变分析及应用[J],真空,2001,(6):9-13.
[27]卢亚雄,张寿康.二氧化钒多层膜的光阀作用[J],红外与激光技术,1994,(1):31-32.
[28]方应翠,陈长琦,朱武等.二氧化钒在智能窗方面应用研究[J],真空,2003,2:16-18.
[29]M.H.Lee Jun-Seok.Cho.Better thermochromic glazing of windows with anti-reflection coating[J],Thin Solid Films,2000,365(1):5-6.
[30]Moon-Hee Lee.Thermochromic glazing of windows with better luminous solar transmittance[J],Solar Energy Materials and Solar Cell,2002,71:537-540.
[31]付伟.激光致盲武器[J],光的世界,1999,12(2):28-29.
[32]付伟.对激光致盲的防护与对抗[J],现代军事,1995,(3):54-55.
[33]牛燕雄,张雏,周增惠.低能激光武器的防护技术[J],光学技术,1998,(1):89-92.
[34]胡江华,周建勋,张保民.战场激光防护技术[J],光学技术,1995,(3):36-39.
[35]施德恒,许启富.基于光学原理的激光防护镜近况[J],光学技术,1999,(4):16-20.
[36]白光,吉禾.用VO2反射镜对激光振荡脉冲前沿整形[J],激光与光电子学进展,1999,10:23-26.
[37]J.S.Orr.Gordon H.Vanadium dioxide protective[R],Report No:ADA212018,1989
[38]袁宁一,李金华,林成鲁.氧化钒薄膜的结构、性能及制备技术的相关性[J],功能材料,2001,32(6):572-575.
[39]D.Zintu,G Tosone,A.Mercuri.Dual ion beam sputtering vanadium dioxide microbolometers by surface micromachining[J],Infrared Physics and Technology,2002,43:245-250.
[40]R.J.Herring,P.E.Howard.Design and performance of the ultra 320×240uncooled focal plane array and sensor[J],SPIE,1996,2746:2-12.
[41]I.H.Jerom.F.Picard,N.R.Swart,et al,.Micromachined uncooled VO2-based IR bolometer arrays[J],SPIE,1996,2746:60-71.
[42]陈长虹,易新建,熊笔峰.基于VO_2薄膜非致冷红外探测器光电响应研究[J], 物理学报,2001,50(3):450-452.
[43]Hakim M O,Babulanam S.M.and Granqvist C.G.Electromechnical properties of VO2 thin film on polyimide substrate[J],Thin Solid Films,1988,(158):L49-L52.
[44]O.P.Konovalova,A.I.Sidorov.Interference systems of controllable mirrors based on vanadium dioxide for the spectral range 0.6-10.6μm.[J],Journal of optical technology,1999,66(5):13-2148.
[45]F.Cardillo Case.Modifications in the phase transition properties of predeposited VO_2 films[J],J.Vac.Sci.Technol,1984,A2(4):1509-1512.
[46]Katsumi Kuwabara,Shoichi Lchikawa,Kohzo Sugiyama.Electrchromic display device within organic Lon Exchanger[J],Electrochem.Soc,1988,135(10):2432-2436.
[47]Chain E E.Optical properties of vanadium dioxide and vanadium pentoxide thin film[J],Appl.Opt,1991,30(19):2782-2787.
[48]M.Nagashima,H.Wada.Near infrared optical properties of laser ablated VO_2thin films by ellipsometry[J],Thin Solid films.1998,19:1883.
[49]Masaharu Fukuma,Sakea Zembutsu,Shintaro Miyazawa.Preparation of VO_2 thin films and its direct optical bit recording characteristics[J],Applied Optics,1983,22(2):265-268.
[50]F.C.Case,Simple resistance model fit to the oxidation of a vanadium film into VO.[J].Vac.Sci,Techol.A,1988,6(1):123.
[51]K.Okimura,N.Kubo.Growth of VO_2 films with metal-insulator transition on silicon substrates in inductively coupled plasma-assisted sputtering.Thin Solid Films 2007,515:4992-4995.
[52]S.Saitzek et al.,VO_2 thin films deposited on silicon substrates from V_2O_5target:limits in optical switching properties and modeling,Thin solid films 2007,10.1016.
[53]Anibal Gavini,Clarence C.Y.K wan,P.R.B.1972,5(8):3138.
[54]K.R.Speck,M.E.Sherwin,R.S Potember.Vanadium dioxide films grown from vanadium tetra-isopropoxide by the sol-gel Process[J],Thin Solid Films,1988, 165:317-322
[55]P.Mei,X.S Chen,et al,.Properties of VO_2 thin film prepared with precursor VO(acac)_2,J.Crys.Growth,2004,265:121-126.
[56]H.K.Kim,H.You,R.P.Chiarello,et al,Continuous orientational ordering transition of carbon monoxide on graphite.Phys.Rev.B,1993,47(19):12900.
[57]Y Muraoka,Y Ueda,Z Hiroi.Large modification of the metal-insulator transition temperature in strained VO_2 films grown on TiO_2 substrates[J],Journal of Physics and Chemistry of Solids,2002,63:965-967.
[58]M.L,F.Barard,T.G.Reynolds.J.Sol.Sta.Chem.3484-489,1971.
[59]W.L Song and X.G Fu.J.Matt.Sci.Lett.15(1996) 856-857.
[60]R.M.Bowman,J.M.Gregg.VO2 thin films:Growth and the effect of applied strain on the resistance[J].J Mater Sci 1998,9(3):187-191.
[61]A.Stanley Lawton.Effect of Tungsten and Molybdenum Doping on the Semiconductor -Metallic Transition in Vanadium Dioxide Produced By Evaporation Decomposition of Solutions and Hydrogen Reduction.[J],J Am Ceram Soc,1995,78(1):238-240.
[62]W.Burkhardt,T.Christmann,B.K.Meyer B,et al.W and F-doped films studied by photoelectron spectrometry[J],Thin Solid Films,1999,345:229-235.
[63]W.Burkhardt,T.Christmann,S.Franke,et al.Tungsten and fluorine co-doping of VO2 films[J],Thin Solid Films,2002,402:226-231.
[64]M.L.F,T.C.Reynolds,M.Vlasse,et al,.Preparation and Properries of the Oxyflouride SystemsV_2O_(5-x) and VO_(2-x)F_x[J],Journal of Solid State Chemistry,1991,3:484-489.
[65]G.H.Fu et al.,Annealing effects on VO_2 thin films deposited by reactive sputtering.Thin Solid Films 2006,515:2519-2522.
[66]洪广言《无机固体化学》 科学出版社2002,P:204.
[67]W.Burkhardt,et al.,W-and F-doped VO_2 films studied by photocelectron spectrometry,Thin Solid Films,345(1999) 229.
[68]P.Jin,S.T anemura,Tailoring of Luminous Transmittance upon Swithcing for Thermochromic VO_2 films by thickness control.Jpn.J.Appl.Phys,34(1995) 2459.
[69]W.Burkhardt,et al,.Molydenum-doped vanadium dioxide coatings on glass produced by the aqueous sol-gel method.Thin Solid Films 2002,402:226-231.
[70]洪广言《无机固体化学》 科学出版社 2002,P:214.