溶胶凝胶法制备ZnO和Mg_xZn_（1-x）O薄膜及其性能研究
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摘要
氧化锌是一种Ⅱ-Ⅵ族宽禁带氧化物半导体材料。传统上，ZnO薄膜被广泛应用于声表面波器件、体声波器件、气敏传感器、压敏电阻、透明电极、紫外探测器等领域。近年来，ZnO作为宽禁带半导体光电材料的研究越来越受到人们的重视。ZnO薄膜具有多项优点，如生长温度低，激子结合能高，受激辐射阀值低等。利用Mg_xZn_(1-x)O薄膜，可以在保持ZnO六方纤锌矿(WurtZite)结构的同时有效调节调节薄膜的禁带宽度，制备出基于氧化锌的量子阱、超晶格及相关的光电器件，如基于氧化锌的紫外光探测器、紫外发光二极管和紫外激光二极管等光电子器件。
本论文综述了ZnO薄膜的各种生长技术及其原理，并概括了氧化锌薄膜研究的最新进展。利用溶胶凝胶法成功地在石英玻璃和单晶硅片等衬底上制备出了c轴择优取向的ZnO薄膜，并利用X射线衍射仪、紫外-可见光光谱仪、荧光光谱仪等对ZnO薄膜的结构和性能进行了测试、分析，并研究了热处理参数等条件对ZnO薄膜性能的影响。
利用Mg_xZn_(1-x)O薄膜成功实现了ZnO薄膜禁带宽度的调节，研究了Mg_xZn_(1-x)O薄膜的结构和光学禁带宽度以及光致发光性能与Mg~(2+)离子含量之间的关系。同时研究了热处理温度对Mg_xZn_(1-x)O薄膜性能的影响并得到了最佳热处理温度。
ZnO is a direct wide band-gap II-VI semiconductor material. Traditionally, ZnO is used as surface acoustic wave devices (SAW), bulk acoustic devices (BAW), gas sensors, varistors, transparent electrodes, UV-detectors, and etc. In recent years, ZnO has gained more and more attention as a wide band semiconductor. Compared to other wildly studied wide band semiconductors. ZnO is promising: high-quality ZnO with very low defect densities can be synthesized at much lower temperature; ZnO can emits light with shorter wavelength than blue light emission from GaN; ZnO has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature; by alloying with MgO, tuning of the band gap while keeping the ZnO hexagonal structure can be achieved by forming MgxZn1-xO. As we know, band gap tuning is important to produce efficient and lasting light emitting diodes (LED) and other electronic devices.
In this paper, the various growth techniques of ZnO films and the progresses in the research of ZnO were reviewed. And then, ZnO thin films were synthesize on quartz and silicon substrates by sol-gel dip-coating and spin-coating. The properties of the films and the effects of growth parameters on the quality of ZnO films were studied using X-ray diffraction, optical absorption, photoluminescence techniques, etc.
To modify the energy gap of the ZnO, Mg2+ was added in the sol-gel solution, and MgxZn1-xO films were prepared by the same method as that for ZnO films. The effects of Mg content (x), and the annealing parameters on the properties of MgxZn1-xO films were also investigated.
本论文综述了ZnO薄膜的各种生长技术及其原理，并概括了氧化锌薄膜研究的最新进展。利用溶胶凝胶法成功地在石英玻璃和单晶硅片等衬底上制备出了c轴择优取向的ZnO薄膜，并利用X射线衍射仪、紫外-可见光光谱仪、荧光光谱仪等对ZnO薄膜的结构和性能进行了测试、分析，并研究了热处理参数等条件对ZnO薄膜性能的影响。
利用Mg_xZn_(1-x)O薄膜成功实现了ZnO薄膜禁带宽度的调节，研究了Mg_xZn_(1-x)O薄膜的结构和光学禁带宽度以及光致发光性能与Mg~(2+)离子含量之间的关系。同时研究了热处理温度对Mg_xZn_(1-x)O薄膜性能的影响并得到了最佳热处理温度。
ZnO is a direct wide band-gap II-VI semiconductor material. Traditionally, ZnO is used as surface acoustic wave devices (SAW), bulk acoustic devices (BAW), gas sensors, varistors, transparent electrodes, UV-detectors, and etc. In recent years, ZnO has gained more and more attention as a wide band semiconductor. Compared to other wildly studied wide band semiconductors. ZnO is promising: high-quality ZnO with very low defect densities can be synthesized at much lower temperature; ZnO can emits light with shorter wavelength than blue light emission from GaN; ZnO has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature; by alloying with MgO, tuning of the band gap while keeping the ZnO hexagonal structure can be achieved by forming MgxZn1-xO. As we know, band gap tuning is important to produce efficient and lasting light emitting diodes (LED) and other electronic devices.
In this paper, the various growth techniques of ZnO films and the progresses in the research of ZnO were reviewed. And then, ZnO thin films were synthesize on quartz and silicon substrates by sol-gel dip-coating and spin-coating. The properties of the films and the effects of growth parameters on the quality of ZnO films were studied using X-ray diffraction, optical absorption, photoluminescence techniques, etc.
To modify the energy gap of the ZnO, Mg2+ was added in the sol-gel solution, and MgxZn1-xO films were prepared by the same method as that for ZnO films. The effects of Mg content (x), and the annealing parameters on the properties of MgxZn1-xO films were also investigated.
引文
1. V. Srikant, D.R. Clarke, On the optical band gap of zinc oxide, J. Appl. Phys., 1998, 83(10), 5447-5451.
2. S.L. King, LW. Boyd, J.G.E. Gardeniers, Pulsed-laser deposited ZnO for device applications, Appl. Surface Sci. 1996, 96-98, 811-818.
3. B.J. Jin, S.H. Bac, S.Y. Lee, S. Im, Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition, Mater. Sci. Eng. B, 2000, 71, 301-305.
4. Dinghua Bao, Haoshuang Gu, Anxiang Kuang, Sol-gel-derived c-axis oriented ZnO thin films, Thin Solid Films 1998, 312, 37-39.
5．宋登元，王永青，孙荣霞，宗晓萍，郭宝增，Ar气压对射频磁控溅射铝掺杂ZnO薄膜特性的影响，半导体学报，2002，23(10)，1078-1081。
6. D.C. Look, Recent advances in ZnO materials and devices, Materials science and Engineering, 2001, B80, 383-387.
7. H.K. Jong, J.S. Sung, M.S. Young, A.A. Vasiliev, V.V. Malyshev, Propane/butane semiconductor gas sensor with low power consumption, Sensors and Actuators B: Chemical, 1997, 44, 452-457.
8. H. Nanto, T. Morita, H. Habara, K. Kondo, T. Minami, Y. Douguchi, Doping effect of SnO_2 on gas sensing characteristics of sputtered ZnO thin film chemical sensor, Sensors and Actuators B: Chemical, 1996, 36, 384-387.
9. F.H. Nicoll, Ultraviolet ZnO laser pumped by an electron beam, Appl. Phys. Lett. 1966, 9, 13-15.
10. Z.K. Tang, G.K.L. Wong, R Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa, Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films, Applied Physics Letters, 1998, 72, 3270-3272.
11. P. Yu, Z.K. Tang, G.K.L. Wong, M. Kawasaki, A. Ohtomo, H. Koinoma, Y. Segawa, Room-temperature gain spectra and lasing in microcrystalline ZnO thin
films, Joumal of Crystal Growth, 1998, 184/185,601-604.
12. T. Makino, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, Y. Matsumoto, H. Koinuma, High-throughput optical characterization for the development of a ZnO-based ultraviolet semiconductor-laser, Applied Surface Science, 2002, 189, 277-283.
13. D.M. Bagnall, Y.F. Chen, Z. Zhu, Y. Yao, M. Y. Shen, T. Goto, High temperature excitonic stimulated emission from ZnO epitaxial layers, Applied Physics Letters, 1998, 73(8), 1038-1040.
14. R.D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J.B. Halpern, M.G. Spencer, Y.X. Li, L.G. Salamanca-Riba, A. A. Lliadis, K.A. Jones, Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices, Applied Physics Letters, 1998, 73, 348-350.
15. I. Hayashi, M.B. Panish, P.W. Foy, S. Sumski, Junction lasers that operate continuously at room temperature, Appl. Phys. Lett., 1970, 17,109-111.
16. Y. Minemoto, T. Negami, S. Nishiwaki, H. Yakakura, Y. Hamakawa, Preparation of Zn_(1-x)Mg_xO films by radio frequency magnetron sputtering, Thin Solid Films, 2000, 372, 173-176.
17. Y. S. Choi, C.G. Lee, S.M. Cho, Transparent conducting Zn_xCd_(1-x)O thin films prepared by the sol-gel process, Thin solid Films, 1996, 289,153-158.
18. G. Santana, A. Morales-Acevedo, O. Vigil, L. Vaillant, F. Cruz, G. Contreras-Puente, Structural and optical properties of ZnO CdO thin films obtained by spray pyrolysis. Thin Solid Films 2000, 373, 235-238.
19. H. Tabet-Derraz, N. Benramdane, D. Nacer, A. Bouzidi, M. Medles, Investigations on Zn_xCd_(1-x)O thin films obtained by spray pyrolysis, Solar Energy Materials & Solar Cells 2002, 73, 249-259.
20. S. Desgreniers, High-density phases of ZnO: Structural and compressive parameters, Physics Review B, 1998, 58, 14102-14105.
21. H. Kim, C.M. Gilmore, J.S. Horwitz, A. Piqu, G.P. Kushto, R. Schlaf, H. Murata, Z.H. Kafafi and D. B. Chrisey, Transparent conducting aluminum-doped zinc oxide thin films for organiclight-emitting devices, Appl. Phys. Lett., 2000, 76(3),
259-261．
22．施昌勇，沈克服，溅射电压和铝掺杂对透明导电氧化锌薄膜性能的影响，稀有金属，2000，24(2)，154-156。
23．郭常新，傅竹西，施潮淑，阴极射线激发下ZnO薄膜室温紫外发光的超线性增长规律，发光学报，1998，19(3)，239-241。
24. K. Vanheusden, C.H. Seager, W.L. Warren, D.R. Tallant, and J.A. Voigt, Correlation between photoluminescence and oxygen vacancies in ZnO phosphors, Appl. Phys. lett., 1996, 68(3), 403-405.
25. D.C. Look, D.C. Reynolds, Z.Q. Fang, J.W. Hemsky, J.R. Sizelove and R.L. Jones, Point defect characterization of GaN and ZnO, Mater. Sci. Eng. B, 1999, 66, 30-32
26. M. Kawasaki, A. Ohtomo, P. Yu, I. Ohkubo, H. Koinuma, Z.K. Tang, G.K.L Wong, B.P. Zhang, Excitonic ultraviolet laser emission at room temperature from naturally made cavity in ZnO nanocrystal thin films, Materials Science and Engineering 1998, B56, 239-245.
27. K. Yamaya, Y. Yamaki, H. Nakanishi, S. Chichibu, Use of a helicon-wave excited plasma for aluminum-doped ZnO thin-film sputtering, Applied Physics Letters, 1998, 72, 235-237.
28. Tadatsugu Minami, Hirotoshi Sato, Transparent conducting impurity-co-doped ZnO: Al thin films prepared by magnetron sputtering, Journal of Applied Physics, 1992, 31, 1106-09.
29. Ki Cheol Park, Dae Young Ma, Kun Ho Kim, Comparison of Alternative Knowledge Model for the Diagnosis of Asthma, Thin Solid Film, 1997, 305, 201-209.
30. G. Xin-Li, T. Hitoshi, K. Tomoji, p-Type conduction in transparent semiconductor ZnO thin films induced by electron cyclotron resonance N_2O plasma. Optical Materials, 2002, 229-233.
31. T. Aoki, Y. Hatanaka, D,C. Look, ZnO diode fabricated by excimer-laser doping. Applied Physics Letters, 2000, 76, 3257-3258.
32. Y.R. Ryu, S. Zhu, D.C. Look, J.M. Wrobel, H.M. Jeong, H.W. White. Synthesis of
p-type ZnO films, Journal of Crystal Growth, 2000,216, 330-334.
33. J. Mathew, T. Hitoshi, K.Tomoji, Magnetic and electric properties of transition-metal-doped ZnO films, Applied Physics Letters, 2001, 79, 988-993.
34. H.Y. Bae, G.M. Choi, Electrical and reducing gas sensing properties of ZnO and ZnO-CuO thin films fabricated by spin coating method, Sens. and Act., 1999, B55(1), 47-54.
35. K. Tominaga, T. Takao, A. Fukushima, T. Morniga, I. Nakabayashi, Film properties of ZnO: Al films deposited by co-sputtering of ZnO: Al and contaminated Zn targets with Co, Mn and Cr, Vacuum, 2002, 66, 511-515.
36. F. D. Paraguay, M. Miki-Yoshida, J. Morales, J. Solis, W. Estrada L., Influence of Al, In, Cu, Fe and Sn dopants on the response of thin film ZnO gas sensor to ethanol vapour. Thin Solid Films, 2000, 373, 137-140.
37. Rao, B. Bhooloka, Gas sensitivity of ZnO based thick film sensor to NH_3 at room temperature. Materials Chemistry and Physics, 2000, 64, 62-65.
38. N. Horio, T. Hiramatsu, M. Nawata, K. Imaeda, T. Torii, Preparation of zinc oxide/metal oxide multilayered thin films for low-voltage varistors, Vacuum, 1998, 51,719-722.
39．贾锐，武光明，宋世庚，陶明德，喷雾热分解法制备ZnO系低压压敏薄膜，硅酸盐学报，1999，27(4)，505-507。
40. N. Dayan, Jayadev, S.R. Sainkar, R.N. Karekar, R.C. Aiyer, Formulation andcharacterization of ZnO: Sb thick-film gas sensors, Thin Solid Films, 1998, 325, 254-258.
41. N.K. Zayer, R. Greef, K. Rogers, A.J.C. Grellier, C.N. Pannell, In situ monitoring of sputtered zinc oxide films for piezoelectric transducers, Thin Solid Films, 1999, 352, 179-184.
42. C.C. Chang, Y.E. Chen, Fabrication of High Sensitivity ZnO Thin Film Ultrasonic Devices by Electrochemical Etch Techniques, IEEE Transactions on Ultransonic Ferroelectrics and Frequency Control, 1997, 44(3), 624-628.
43. D.C. Look, D.C. Reynods, J.W. Hemsky, R.L. Jones, and J.R. Sizelove, Production and annealing of electron irradiation damage in ZnO. Appl. Phys. Lett,
1999，75(6)，811-813．
44．徐彭寿，孙玉明，施朝淑，徐法强，潘海斌，ZnO及其缺陷的电子结构，中国科学(A辑)，2001，31(4)，358-365．
45．徐彭寿，孙玉明，施朝淑，徐法强，潘海斌，ZnO及其缺陷电子结构对光谱特性的影响，红外与毫米波学报，2002，21(Suppl.)，91-96．
46. D.M. Bagnall, Y.F. Chen, M.Y. Shen, Z. Zhu, T. Gotob, T. Yaoa, Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE, J. Cryst. Growth, 1998, 184/185, 605-609.
47. J.S. Kang, H.S. Kang, S.S. Pang, E. S. Shim, S. Y. Lee, Investigation on the origin of green luminescence from laser-ablated ZnO thin film, Thin Solid Films, 2003, 443, 5-8.
48. S.B. Zhang, S.H. Wei, A. Zunger, Intrinsic n-type vs. p-type doping asymmetry and the defect physics, [J]. Phys. RevB, 2001, 63, 075205(1-7).
49. E.C. Lee, Y.S. Kim, Y.G. Jin, K.J. Chang, First principles study of the compensation mechanism in N-doped ZnO, [J]. Physica B, 2001, 308-310, 912-913.
50. K.Vanheusden, W.L. Warrmen, C.H. Seager, D.R. Tallant, and J.A. Voigt, Mechanisms behind green photoluminescence in ZnO phosphor powders, [J]. Appl. Phys. Lett. 1996, 79(10), 7983-7990.
51. P.S. Xu, Y.M. Sun, C.S. Shi, F.Q. Xu, H.B. Pan, The electronic structure and spectral properties of ZnO and its defects, [J]. Physica B, 2003, 199, 286-290.
52. B.X. Lin, Z.X. Fu, Y. B. Jia, Green luminescent center in undoped zinc oxide films deposited on silicon substrates, [J]. Appl. Phys. Lett. 2001, 79(7), 943-945.
53. Zhizhen Ye, Dewei Ma, Junhui He, Jingyun Huang, Binghui Zhao, Xiangdong Luo, Zhongying Xu, Structural and photoluminescent properties of ternary Zn_(1-x)Cd_xO crystal films grown on Si(111) substrates. Journal of Crystal Growth, 2003, 256, 78-82.
54．陈汉鸿，叶志镇，ZnO薄膜的掺杂和转型的研究进展，半导体情报，2001 38(2)，37-39。
55．J.L.沃森，w.恩克，薄膜加工工艺，机械工业出版社，第一版，1987。
56．顾培夫，薄膜技术，浙江大学出版社，第一版，1995。
57．应春，沈杰，陈华仙，杨锡良，章壮健，ZnO：Al透明导电薄膜的研制，真空科学与技术，1998，18(2)，125-129。
58. D.F. Paraguay, L.W. Estrada, N.D.R Acosta, E. Andrade, M. Miki-Yoshida, Growth, structure and optical characterization of high quality ZnO thin films obtained by spray pyrolysis, Thin Solid Films, 1999, 350, 192-202.
59. Benny Joseph, K.G Gopchandran, P.V. Thomas, Peter Koshy, V.K. Vaidyan, A study on the chemical spray deposition of zinc oxide thin films and their structural and electrical properties, Materials Chemistry and Physics, 1999, 58, 71-77.
60. T.A. Polley, W.B. Carter, D.B. Poker, Deposition of zinc oxide thin films by combustion CVD. Thin Solid Films, 1999, 357, 132-136.
61. Young-Jin Kim, Hyeong-Joon Kim, Trapped oxygen in the grain boundaries of ZnO polycrystalline thin films prepared by plasma-enhanced chemical vapor deposition, Materials Letters, 1999, 41, 159-163.
62. N.W. Emanetaglu, C.Gorla, Y. Liu, Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (011-bar 2) sapphire by MOCVD, Materials Science in Semiconductor Processing. 1999, 2, 247-252.
63. J.H. Hu, R.G. Gordon, Textured aluminum-doped zinc oxide thin films from atmospheric pressure chemical-vapor deposition, ApplPhys, 1992, 71(2), 880-890.
64. R Zu, Z.K. Tang, G.K.L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa, Ultraviolet spontaneous and stimuilated emissions from ZnO microcrystallite thin films at room temperature, Solid State Com., 1997, 103(8), 459-463.
65. D.M. Bagnall, Y.F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Shen, and T. Goto, Optically pumped lasing of ZnO at room temperature, Appl. Phys. Lett., 1997, 70(17), 2230-2232.
66. F.Y. Chen, D. Bagnall, T. Yao, High temperature excitonic stimulated emission from ZnO epitaxial layers, Materials Science and Engineering, 2000, B75, 190-198.
67. Y. F. Chen, H. J. Ko, S. K. Hong, Yin X, Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy, Journal of Crystal Growth, 2001, 227-228, 917-922.
68. K. Nagahara, H. Takasu, P. Fons, ZnO growth on Si by radical source MBE, Journal of Crystal Growth, 2000, 227/228, 50-54.
69. A.W. Ott, R.P.H. Chang, Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates, Materials Chemistry and Physics, 1999, 58, 132-138.
70. 张凤翔，脉冲激光沉积工艺，真空电子技术，1998，3，43-46。
71. 刘彦松，王连卫，李伟群，黄继颇，林成鲁，用PLD法制备声表面波器件用ZnO薄膜，功能材料，2001，32(1)，78-79，90。
72. Soumya Krishnamoorthy, Agis A. Iliadis, Aravind Inumpudi, Supab Choopun, Ratnakar D. Vispute, Tirumalai Venkatesan, Observation of resonant tunneling action in ZnO/Zn_(0.8)Mg_(0.2)O devices, Solid-State Electronics, 2002, 46, 1633-1637.
73. R Verardi, M. Dinescu, A. Andrei, Characterization of ZnO Thin Films Deposited by Laser Ablation in Reactive Atmosphere, Applied Surface Science 1996, 96-98, 827-830.
74. H. K. Ardakani, Electrical conductivity of in situ "hydrogen-reduced" and structural properties of zinc oxide thin films deposited in different ambients by pulsed excimer laser ablation, Thin Solid Films, 1996, 287, 280-283.
75. G. Xin-Li, T. Hitoshi, K. Tomoji, p-Type conduction in transparent semiconductor ZnO thin films induced by electron cyclotron resonance N_2O plasma, Optical Materials, 2002, 19(1), 229-233.
76. T. Schuler, M.A. Aegerter, Optical, electrical and structural properties of sol gel ZnO: Al coatings, Thin Solid Films, 1999, 351, 125-131.
77. M.N. Karnalasanan, S. Chandra, Sol-gel synthesis of ZnO thin film, Thin Solid Films, 1996, 288, 112-115.
78. H. Kozuka, T. Yoko, M. Ohyama, Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution, Thin Solid Films, 1997, 306, 78-85.
79. T. Nagase, T. Ooie, J. Sakakibara, A novel approach to prepare zinc oxide films: excimer laser irradiation of sol-gel derived precursor films, Thin Solid Films, 1999, 357, 151-158.
80. 杨南如，余桂郁，溶胶-凝胶法的基本原理与过程，硅酸盐通报，1993，2，56-63。
81. 丁星兆，何怡贞，董远达， 溶胶-凝胶工艺在材料科学中的应用，材料科学与工程，1994，12(2)，1-8。
82. A.E. Jimenez-Gonzalez, J.A. Soto Urueta, R. Suarez-Parra, Optical and electrical characteristics of aluminum-doped ZnO thin films prepared by solgel technique, J. Crystal Growth, 1998, 192(3-4), 430-438.
83. P. Nunes, A. Malic, B. Fernandes, E. Fortunato, P. Vilarinho, R. Martins, Influence of the doping and annealing atmosphere on zinc oxide thin films deposited by spray pyrolysis, Vaccuum, 1999, 52(1-2), 45-49.
84. 杨成兴，季振国，刘坤，樊瑞新，叶志镇，雾化热解法制备ZnO薄膜及其光电性能，半导体学报，2002，23(10)，1083-1087。
2. S.L. King, LW. Boyd, J.G.E. Gardeniers, Pulsed-laser deposited ZnO for device applications, Appl. Surface Sci. 1996, 96-98, 811-818.
3. B.J. Jin, S.H. Bac, S.Y. Lee, S. Im, Effects of native defects on optical and electrical properties of ZnO prepared by pulsed laser deposition, Mater. Sci. Eng. B, 2000, 71, 301-305.
4. Dinghua Bao, Haoshuang Gu, Anxiang Kuang, Sol-gel-derived c-axis oriented ZnO thin films, Thin Solid Films 1998, 312, 37-39.
5．宋登元，王永青，孙荣霞，宗晓萍，郭宝增，Ar气压对射频磁控溅射铝掺杂ZnO薄膜特性的影响，半导体学报，2002，23(10)，1078-1081。
6. D.C. Look, Recent advances in ZnO materials and devices, Materials science and Engineering, 2001, B80, 383-387.
7. H.K. Jong, J.S. Sung, M.S. Young, A.A. Vasiliev, V.V. Malyshev, Propane/butane semiconductor gas sensor with low power consumption, Sensors and Actuators B: Chemical, 1997, 44, 452-457.
8. H. Nanto, T. Morita, H. Habara, K. Kondo, T. Minami, Y. Douguchi, Doping effect of SnO_2 on gas sensing characteristics of sputtered ZnO thin film chemical sensor, Sensors and Actuators B: Chemical, 1996, 36, 384-387.
9. F.H. Nicoll, Ultraviolet ZnO laser pumped by an electron beam, Appl. Phys. Lett. 1966, 9, 13-15.
10. Z.K. Tang, G.K.L. Wong, R Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa, Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films, Applied Physics Letters, 1998, 72, 3270-3272.
11. P. Yu, Z.K. Tang, G.K.L. Wong, M. Kawasaki, A. Ohtomo, H. Koinoma, Y. Segawa, Room-temperature gain spectra and lasing in microcrystalline ZnO thin
films, Joumal of Crystal Growth, 1998, 184/185,601-604.
12. T. Makino, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, Y. Matsumoto, H. Koinuma, High-throughput optical characterization for the development of a ZnO-based ultraviolet semiconductor-laser, Applied Surface Science, 2002, 189, 277-283.
13. D.M. Bagnall, Y.F. Chen, Z. Zhu, Y. Yao, M. Y. Shen, T. Goto, High temperature excitonic stimulated emission from ZnO epitaxial layers, Applied Physics Letters, 1998, 73(8), 1038-1040.
14. R.D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J.B. Halpern, M.G. Spencer, Y.X. Li, L.G. Salamanca-Riba, A. A. Lliadis, K.A. Jones, Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices, Applied Physics Letters, 1998, 73, 348-350.
15. I. Hayashi, M.B. Panish, P.W. Foy, S. Sumski, Junction lasers that operate continuously at room temperature, Appl. Phys. Lett., 1970, 17,109-111.
16. Y. Minemoto, T. Negami, S. Nishiwaki, H. Yakakura, Y. Hamakawa, Preparation of Zn_(1-x)Mg_xO films by radio frequency magnetron sputtering, Thin Solid Films, 2000, 372, 173-176.
17. Y. S. Choi, C.G. Lee, S.M. Cho, Transparent conducting Zn_xCd_(1-x)O thin films prepared by the sol-gel process, Thin solid Films, 1996, 289,153-158.
18. G. Santana, A. Morales-Acevedo, O. Vigil, L. Vaillant, F. Cruz, G. Contreras-Puente, Structural and optical properties of ZnO CdO thin films obtained by spray pyrolysis. Thin Solid Films 2000, 373, 235-238.
19. H. Tabet-Derraz, N. Benramdane, D. Nacer, A. Bouzidi, M. Medles, Investigations on Zn_xCd_(1-x)O thin films obtained by spray pyrolysis, Solar Energy Materials & Solar Cells 2002, 73, 249-259.
20. S. Desgreniers, High-density phases of ZnO: Structural and compressive parameters, Physics Review B, 1998, 58, 14102-14105.
21. H. Kim, C.M. Gilmore, J.S. Horwitz, A. Piqu, G.P. Kushto, R. Schlaf, H. Murata, Z.H. Kafafi and D. B. Chrisey, Transparent conducting aluminum-doped zinc oxide thin films for organiclight-emitting devices, Appl. Phys. Lett., 2000, 76(3),
259-261．
22．施昌勇，沈克服，溅射电压和铝掺杂对透明导电氧化锌薄膜性能的影响，稀有金属，2000，24(2)，154-156。
23．郭常新，傅竹西，施潮淑，阴极射线激发下ZnO薄膜室温紫外发光的超线性增长规律，发光学报，1998，19(3)，239-241。
24. K. Vanheusden, C.H. Seager, W.L. Warren, D.R. Tallant, and J.A. Voigt, Correlation between photoluminescence and oxygen vacancies in ZnO phosphors, Appl. Phys. lett., 1996, 68(3), 403-405.
25. D.C. Look, D.C. Reynolds, Z.Q. Fang, J.W. Hemsky, J.R. Sizelove and R.L. Jones, Point defect characterization of GaN and ZnO, Mater. Sci. Eng. B, 1999, 66, 30-32
26. M. Kawasaki, A. Ohtomo, P. Yu, I. Ohkubo, H. Koinuma, Z.K. Tang, G.K.L Wong, B.P. Zhang, Excitonic ultraviolet laser emission at room temperature from naturally made cavity in ZnO nanocrystal thin films, Materials Science and Engineering 1998, B56, 239-245.
27. K. Yamaya, Y. Yamaki, H. Nakanishi, S. Chichibu, Use of a helicon-wave excited plasma for aluminum-doped ZnO thin-film sputtering, Applied Physics Letters, 1998, 72, 235-237.
28. Tadatsugu Minami, Hirotoshi Sato, Transparent conducting impurity-co-doped ZnO: Al thin films prepared by magnetron sputtering, Journal of Applied Physics, 1992, 31, 1106-09.
29. Ki Cheol Park, Dae Young Ma, Kun Ho Kim, Comparison of Alternative Knowledge Model for the Diagnosis of Asthma, Thin Solid Film, 1997, 305, 201-209.
30. G. Xin-Li, T. Hitoshi, K. Tomoji, p-Type conduction in transparent semiconductor ZnO thin films induced by electron cyclotron resonance N_2O plasma. Optical Materials, 2002, 229-233.
31. T. Aoki, Y. Hatanaka, D,C. Look, ZnO diode fabricated by excimer-laser doping. Applied Physics Letters, 2000, 76, 3257-3258.
32. Y.R. Ryu, S. Zhu, D.C. Look, J.M. Wrobel, H.M. Jeong, H.W. White. Synthesis of
p-type ZnO films, Journal of Crystal Growth, 2000,216, 330-334.
33. J. Mathew, T. Hitoshi, K.Tomoji, Magnetic and electric properties of transition-metal-doped ZnO films, Applied Physics Letters, 2001, 79, 988-993.
34. H.Y. Bae, G.M. Choi, Electrical and reducing gas sensing properties of ZnO and ZnO-CuO thin films fabricated by spin coating method, Sens. and Act., 1999, B55(1), 47-54.
35. K. Tominaga, T. Takao, A. Fukushima, T. Morniga, I. Nakabayashi, Film properties of ZnO: Al films deposited by co-sputtering of ZnO: Al and contaminated Zn targets with Co, Mn and Cr, Vacuum, 2002, 66, 511-515.
36. F. D. Paraguay, M. Miki-Yoshida, J. Morales, J. Solis, W. Estrada L., Influence of Al, In, Cu, Fe and Sn dopants on the response of thin film ZnO gas sensor to ethanol vapour. Thin Solid Films, 2000, 373, 137-140.
37. Rao, B. Bhooloka, Gas sensitivity of ZnO based thick film sensor to NH_3 at room temperature. Materials Chemistry and Physics, 2000, 64, 62-65.
38. N. Horio, T. Hiramatsu, M. Nawata, K. Imaeda, T. Torii, Preparation of zinc oxide/metal oxide multilayered thin films for low-voltage varistors, Vacuum, 1998, 51,719-722.
39．贾锐，武光明，宋世庚，陶明德，喷雾热分解法制备ZnO系低压压敏薄膜，硅酸盐学报，1999，27(4)，505-507。
40. N. Dayan, Jayadev, S.R. Sainkar, R.N. Karekar, R.C. Aiyer, Formulation andcharacterization of ZnO: Sb thick-film gas sensors, Thin Solid Films, 1998, 325, 254-258.
41. N.K. Zayer, R. Greef, K. Rogers, A.J.C. Grellier, C.N. Pannell, In situ monitoring of sputtered zinc oxide films for piezoelectric transducers, Thin Solid Films, 1999, 352, 179-184.
42. C.C. Chang, Y.E. Chen, Fabrication of High Sensitivity ZnO Thin Film Ultrasonic Devices by Electrochemical Etch Techniques, IEEE Transactions on Ultransonic Ferroelectrics and Frequency Control, 1997, 44(3), 624-628.
43. D.C. Look, D.C. Reynods, J.W. Hemsky, R.L. Jones, and J.R. Sizelove, Production and annealing of electron irradiation damage in ZnO. Appl. Phys. Lett,
1999，75(6)，811-813．
44．徐彭寿，孙玉明，施朝淑，徐法强，潘海斌，ZnO及其缺陷的电子结构，中国科学(A辑)，2001，31(4)，358-365．
45．徐彭寿，孙玉明，施朝淑，徐法强，潘海斌，ZnO及其缺陷电子结构对光谱特性的影响，红外与毫米波学报，2002，21(Suppl.)，91-96．
46. D.M. Bagnall, Y.F. Chen, M.Y. Shen, Z. Zhu, T. Gotob, T. Yaoa, Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE, J. Cryst. Growth, 1998, 184/185, 605-609.
47. J.S. Kang, H.S. Kang, S.S. Pang, E. S. Shim, S. Y. Lee, Investigation on the origin of green luminescence from laser-ablated ZnO thin film, Thin Solid Films, 2003, 443, 5-8.
48. S.B. Zhang, S.H. Wei, A. Zunger, Intrinsic n-type vs. p-type doping asymmetry and the defect physics, [J]. Phys. RevB, 2001, 63, 075205(1-7).
49. E.C. Lee, Y.S. Kim, Y.G. Jin, K.J. Chang, First principles study of the compensation mechanism in N-doped ZnO, [J]. Physica B, 2001, 308-310, 912-913.
50. K.Vanheusden, W.L. Warrmen, C.H. Seager, D.R. Tallant, and J.A. Voigt, Mechanisms behind green photoluminescence in ZnO phosphor powders, [J]. Appl. Phys. Lett. 1996, 79(10), 7983-7990.
51. P.S. Xu, Y.M. Sun, C.S. Shi, F.Q. Xu, H.B. Pan, The electronic structure and spectral properties of ZnO and its defects, [J]. Physica B, 2003, 199, 286-290.
52. B.X. Lin, Z.X. Fu, Y. B. Jia, Green luminescent center in undoped zinc oxide films deposited on silicon substrates, [J]. Appl. Phys. Lett. 2001, 79(7), 943-945.
53. Zhizhen Ye, Dewei Ma, Junhui He, Jingyun Huang, Binghui Zhao, Xiangdong Luo, Zhongying Xu, Structural and photoluminescent properties of ternary Zn_(1-x)Cd_xO crystal films grown on Si(111) substrates. Journal of Crystal Growth, 2003, 256, 78-82.
54．陈汉鸿，叶志镇，ZnO薄膜的掺杂和转型的研究进展，半导体情报，2001 38(2)，37-39。
55．J.L.沃森，w.恩克，薄膜加工工艺，机械工业出版社，第一版，1987。
56．顾培夫，薄膜技术，浙江大学出版社，第一版，1995。
57．应春，沈杰，陈华仙，杨锡良，章壮健，ZnO：Al透明导电薄膜的研制，真空科学与技术，1998，18(2)，125-129。
58. D.F. Paraguay, L.W. Estrada, N.D.R Acosta, E. Andrade, M. Miki-Yoshida, Growth, structure and optical characterization of high quality ZnO thin films obtained by spray pyrolysis, Thin Solid Films, 1999, 350, 192-202.
59. Benny Joseph, K.G Gopchandran, P.V. Thomas, Peter Koshy, V.K. Vaidyan, A study on the chemical spray deposition of zinc oxide thin films and their structural and electrical properties, Materials Chemistry and Physics, 1999, 58, 71-77.
60. T.A. Polley, W.B. Carter, D.B. Poker, Deposition of zinc oxide thin films by combustion CVD. Thin Solid Films, 1999, 357, 132-136.
61. Young-Jin Kim, Hyeong-Joon Kim, Trapped oxygen in the grain boundaries of ZnO polycrystalline thin films prepared by plasma-enhanced chemical vapor deposition, Materials Letters, 1999, 41, 159-163.
62. N.W. Emanetaglu, C.Gorla, Y. Liu, Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (011-bar 2) sapphire by MOCVD, Materials Science in Semiconductor Processing. 1999, 2, 247-252.
63. J.H. Hu, R.G. Gordon, Textured aluminum-doped zinc oxide thin films from atmospheric pressure chemical-vapor deposition, ApplPhys, 1992, 71(2), 880-890.
64. R Zu, Z.K. Tang, G.K.L. Wong, M. Kawasaki, A. Ohtomo, H. Koinuma, Y. Segawa, Ultraviolet spontaneous and stimuilated emissions from ZnO microcrystallite thin films at room temperature, Solid State Com., 1997, 103(8), 459-463.
65. D.M. Bagnall, Y.F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Shen, and T. Goto, Optically pumped lasing of ZnO at room temperature, Appl. Phys. Lett., 1997, 70(17), 2230-2232.
66. F.Y. Chen, D. Bagnall, T. Yao, High temperature excitonic stimulated emission from ZnO epitaxial layers, Materials Science and Engineering, 2000, B75, 190-198.
67. Y. F. Chen, H. J. Ko, S. K. Hong, Yin X, Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy, Journal of Crystal Growth, 2001, 227-228, 917-922.
68. K. Nagahara, H. Takasu, P. Fons, ZnO growth on Si by radical source MBE, Journal of Crystal Growth, 2000, 227/228, 50-54.
69. A.W. Ott, R.P.H. Chang, Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates, Materials Chemistry and Physics, 1999, 58, 132-138.
70. 张凤翔，脉冲激光沉积工艺，真空电子技术，1998，3，43-46。
71. 刘彦松，王连卫，李伟群，黄继颇，林成鲁，用PLD法制备声表面波器件用ZnO薄膜，功能材料，2001，32(1)，78-79，90。
72. Soumya Krishnamoorthy, Agis A. Iliadis, Aravind Inumpudi, Supab Choopun, Ratnakar D. Vispute, Tirumalai Venkatesan, Observation of resonant tunneling action in ZnO/Zn_(0.8)Mg_(0.2)O devices, Solid-State Electronics, 2002, 46, 1633-1637.
73. R Verardi, M. Dinescu, A. Andrei, Characterization of ZnO Thin Films Deposited by Laser Ablation in Reactive Atmosphere, Applied Surface Science 1996, 96-98, 827-830.
74. H. K. Ardakani, Electrical conductivity of in situ "hydrogen-reduced" and structural properties of zinc oxide thin films deposited in different ambients by pulsed excimer laser ablation, Thin Solid Films, 1996, 287, 280-283.
75. G. Xin-Li, T. Hitoshi, K. Tomoji, p-Type conduction in transparent semiconductor ZnO thin films induced by electron cyclotron resonance N_2O plasma, Optical Materials, 2002, 19(1), 229-233.
76. T. Schuler, M.A. Aegerter, Optical, electrical and structural properties of sol gel ZnO: Al coatings, Thin Solid Films, 1999, 351, 125-131.
77. M.N. Karnalasanan, S. Chandra, Sol-gel synthesis of ZnO thin film, Thin Solid Films, 1996, 288, 112-115.
78. H. Kozuka, T. Yoko, M. Ohyama, Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution, Thin Solid Films, 1997, 306, 78-85.
79. T. Nagase, T. Ooie, J. Sakakibara, A novel approach to prepare zinc oxide films: excimer laser irradiation of sol-gel derived precursor films, Thin Solid Films, 1999, 357, 151-158.
80. 杨南如，余桂郁，溶胶-凝胶法的基本原理与过程，硅酸盐通报，1993，2，56-63。
81. 丁星兆，何怡贞，董远达， 溶胶-凝胶工艺在材料科学中的应用，材料科学与工程，1994，12(2)，1-8。
82. A.E. Jimenez-Gonzalez, J.A. Soto Urueta, R. Suarez-Parra, Optical and electrical characteristics of aluminum-doped ZnO thin films prepared by solgel technique, J. Crystal Growth, 1998, 192(3-4), 430-438.
83. P. Nunes, A. Malic, B. Fernandes, E. Fortunato, P. Vilarinho, R. Martins, Influence of the doping and annealing atmosphere on zinc oxide thin films deposited by spray pyrolysis, Vaccuum, 1999, 52(1-2), 45-49.
84. 杨成兴，季振国，刘坤，樊瑞新，叶志镇，雾化热解法制备ZnO薄膜及其光电性能，半导体学报，2002，23(10)，1083-1087。