掺铝掺硅氧化锌薄膜的制备工艺及其性能研究
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摘要
氧化锌铝(ZAO)透明导电薄膜具有可见光透过率高、红外反射率高、电阻率低等特点,在平板显示器、太阳能薄膜电池、热反射镜、薄膜玻璃等领域具有极其广泛的应用前景。
本文采用预压成型加常压烧结的工艺方法,制备了ZAO陶瓷靶材,利用交流磁控溅射方法,采用ZAO陶瓷靶材制备了ZAO薄膜。研究了靶材中Al_2O_3含量对溅射靶材所制备的ZAO薄膜性能的影响,结果表明,当Al_2O_3含量为2.0wt%时,所制备的ZAO薄膜电学光学性能最优。
本文中,利用四探针电阻测试仪测试了ZAO薄膜的电学性能;利用分光光度计和红外谱仪测试了ZAO薄膜的光学性能;利用扫描电镜、原子力显微镜和X射线衍射仪等设备测试了薄膜的表面形貌和结构。
比较系统地研究了制备ZAO薄膜的工艺参数,即本底真空压力、靶电流密度、氧流量、基体温度和氩气压力等五个因素对ZAO薄膜性能的影响规律。在大量试验结果和综合分析的基础上确定优化工艺为:靶材中Al_2O_3含量为2.0wt%,本底真空压力2.0×10~(-3) Pa,纯氩溅射,靶电流密度6.67 mA/cm~2,基体温度250℃,氩气压力0.8 Pa;在上述优化工艺条件下沉积了厚度为127 nm的薄膜,方阻为32Ω/□,薄膜电阻率4.6×10~(-4)Ω·cm,可见光区平均透过率86%。性能已达到国际先进水平。
研究了具有绒面结构的ZAO薄膜的光学性能和表面特征。通过分析氩气压力、基体温度和薄膜厚度对绒面结构的影响规律,得出了制备具有不同绒度和粗糙度的绒面ZAO薄膜的工艺参数。并制备出具有与已获实际应用的绒面FTO薄膜相比拟绒度的绒面ZAO薄膜。
分析了薄膜厚度、基体温度和氩气压力对红外反射性能的影响规律。确定了制备具有高红外反射率的ZAO薄膜制备工艺。制备的ZAO薄膜的红外反射率大于80%。
采用冷压预成型加常压烧结方法,制备了氧化锌硅(ZSO)陶瓷靶材。确定了制备ZSO靶材的优化工艺参数。并初步研究了基体温度和氩气压力对ZSO薄膜性能的影响。
Aluminum doped zinc oxide (ZAO) transparent conductive thin films with high transparency in visible wavelength range, high infrared reflection, and low resistivity will be widely used in many fields such as flat display panel, thin film solar cell, and heat reflection glass.
In the work, ZAO ceramic targets were manufactured by a composite process of cold mould pressing and sintering. ZAO thin films were prepared by middle-frequency magnetron sputtering with the ZAO target. The effects of Al_2O_3 concentration in target on the electrical and optical properties of ZAO films were investigated. The results showed that ZAO film with optimum properties can be obtained by sputtering the ZAO ceramic target with Al_2O_3 concentration of 2.0wt%.
Four-point probe tester was employed to measure electrical properties. UV-VIS and IR spectrometry were used to examine optical properties at different wavelength. Surface morphology and microstructure were characterized by scanning electronic microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD), respectively.
The effects of the technological parameters for preparing ZAO film including base vacuum pressure, target current density, oxygen pressure, substrate temperature, and argon gas pressure on the properties of ZAO films were systematically studied. Based on a lot of experimental results and comprehensive analysis, the optimum technological parameters were determined as follows: substrate temperature: 250℃, target current density: 6.67 mA/cm~2, base vacuum pressure: 2.0×10~(-3) Pa,argon gas pressure:0.8 Pa without oxygen. Under the optimum preparation condition, the ZAO film with the best properties of average transmittance of 86% in visible range, sheet resistance of 32Ω/□, and resistivity of 4.6×10~(-4)Ω·cm at film thickness of 127 nm, which reach international level, was obtained.
The optical properties and surface morphology characterization of milky ZAO films were studied. The technological parameters for preparing milky ZAO films with various hazes and surface roughnesses were obtained by analyzing the effects of argon gas pressure, substrate temperature, and film thickness on the surface structure of milky films. Meanwhile milky ZAO films with similar haze to milky FTO films, which was already used commercially, can be easily deposited.
The influence of film thickness, substrate temperature, and argon gas pressure on the performance of infrared reflection was experimentally analyzed. The deposition parameters for the ZAO films with high infrared reflection of exceeding 80% were gotten.
Dense Si-doped ZnO (ZSO) ceramic target could be also prepared by cold mould pressing plus sintering under optimized technological parameters. The influence of substrate temperature and argon gas pressure on the electrical and optical properties of ZSO films was preliminary investigated.
本文采用预压成型加常压烧结的工艺方法,制备了ZAO陶瓷靶材,利用交流磁控溅射方法,采用ZAO陶瓷靶材制备了ZAO薄膜。研究了靶材中Al_2O_3含量对溅射靶材所制备的ZAO薄膜性能的影响,结果表明,当Al_2O_3含量为2.0wt%时,所制备的ZAO薄膜电学光学性能最优。
本文中,利用四探针电阻测试仪测试了ZAO薄膜的电学性能;利用分光光度计和红外谱仪测试了ZAO薄膜的光学性能;利用扫描电镜、原子力显微镜和X射线衍射仪等设备测试了薄膜的表面形貌和结构。
比较系统地研究了制备ZAO薄膜的工艺参数,即本底真空压力、靶电流密度、氧流量、基体温度和氩气压力等五个因素对ZAO薄膜性能的影响规律。在大量试验结果和综合分析的基础上确定优化工艺为:靶材中Al_2O_3含量为2.0wt%,本底真空压力2.0×10~(-3) Pa,纯氩溅射,靶电流密度6.67 mA/cm~2,基体温度250℃,氩气压力0.8 Pa;在上述优化工艺条件下沉积了厚度为127 nm的薄膜,方阻为32Ω/□,薄膜电阻率4.6×10~(-4)Ω·cm,可见光区平均透过率86%。性能已达到国际先进水平。
研究了具有绒面结构的ZAO薄膜的光学性能和表面特征。通过分析氩气压力、基体温度和薄膜厚度对绒面结构的影响规律,得出了制备具有不同绒度和粗糙度的绒面ZAO薄膜的工艺参数。并制备出具有与已获实际应用的绒面FTO薄膜相比拟绒度的绒面ZAO薄膜。
分析了薄膜厚度、基体温度和氩气压力对红外反射性能的影响规律。确定了制备具有高红外反射率的ZAO薄膜制备工艺。制备的ZAO薄膜的红外反射率大于80%。
采用冷压预成型加常压烧结方法,制备了氧化锌硅(ZSO)陶瓷靶材。确定了制备ZSO靶材的优化工艺参数。并初步研究了基体温度和氩气压力对ZSO薄膜性能的影响。
Aluminum doped zinc oxide (ZAO) transparent conductive thin films with high transparency in visible wavelength range, high infrared reflection, and low resistivity will be widely used in many fields such as flat display panel, thin film solar cell, and heat reflection glass.
In the work, ZAO ceramic targets were manufactured by a composite process of cold mould pressing and sintering. ZAO thin films were prepared by middle-frequency magnetron sputtering with the ZAO target. The effects of Al_2O_3 concentration in target on the electrical and optical properties of ZAO films were investigated. The results showed that ZAO film with optimum properties can be obtained by sputtering the ZAO ceramic target with Al_2O_3 concentration of 2.0wt%.
Four-point probe tester was employed to measure electrical properties. UV-VIS and IR spectrometry were used to examine optical properties at different wavelength. Surface morphology and microstructure were characterized by scanning electronic microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD), respectively.
The effects of the technological parameters for preparing ZAO film including base vacuum pressure, target current density, oxygen pressure, substrate temperature, and argon gas pressure on the properties of ZAO films were systematically studied. Based on a lot of experimental results and comprehensive analysis, the optimum technological parameters were determined as follows: substrate temperature: 250℃, target current density: 6.67 mA/cm~2, base vacuum pressure: 2.0×10~(-3) Pa,argon gas pressure:0.8 Pa without oxygen. Under the optimum preparation condition, the ZAO film with the best properties of average transmittance of 86% in visible range, sheet resistance of 32Ω/□, and resistivity of 4.6×10~(-4)Ω·cm at film thickness of 127 nm, which reach international level, was obtained.
The optical properties and surface morphology characterization of milky ZAO films were studied. The technological parameters for preparing milky ZAO films with various hazes and surface roughnesses were obtained by analyzing the effects of argon gas pressure, substrate temperature, and film thickness on the surface structure of milky films. Meanwhile milky ZAO films with similar haze to milky FTO films, which was already used commercially, can be easily deposited.
The influence of film thickness, substrate temperature, and argon gas pressure on the performance of infrared reflection was experimentally analyzed. The deposition parameters for the ZAO films with high infrared reflection of exceeding 80% were gotten.
Dense Si-doped ZnO (ZSO) ceramic target could be also prepared by cold mould pressing plus sintering under optimized technological parameters. The influence of substrate temperature and argon gas pressure on the electrical and optical properties of ZSO films was preliminary investigated.
引文
[1] 唐伟忠. 薄膜材料制备原理、技术及应用. 北京:冶金工业出版社,1998,I~II
[2] 姜燮昌. 我国真空工业的现状与发展. 真空,1999,1:3~7
[3] 姜燮昌. 真空镀膜技术的最新发展. 真空,1999,10:5~8
[4] 李玉增. ITO 薄膜产业化进程概述. 世界有色金属,1998,11:16~19
[5] 李盛锋. 大型平板显示器-等离子显示器. 真空电子技术,1994,5:13~16
[6] 王阳元,T.I. 卡明斯,赵全瑛,等. 多晶硅薄膜及其在集成电路中的应用. 北京:科学技术出版社,1988,5~7
[7] 李言荣,恽正中. 电子材料导论. 北京:清华大学出版社,2001,302~303
[8] 田民波,刘德令. 薄膜科学与技术手册(下册),北京:机械工业出版社,1991,597~601
[9] 段学臣,杨向萍. 新材料 ITO 薄膜的应用和发展. 稀有金属与硬质合金,1999, 138:58~60
[10] 钟毅,王达键,刘荣佩. 铟锡氧化物 (ITO) 靶材的应用和制备技术. 昆明理工大学学报,1997,22(1):66~70
[11] R. Anil Kumar, M.S. Suresh, J. Nagaraju. Measurement and comparison of AC parameters of silicon (BSR and BSFR) and gallium arsenide (GaAs/Ge) solar cells used in space applications. Solar Energy Materials & Solar Cells, 2000, 60:155~166
[12] A. Terakawa, M. Shima, M. Isomura, et al. Effect of the optical gap on the temperature dependence of a~SiGe solar cell stability. Journal of Non~Crystalline Solids, 1998, 227~230:1267~1271
[13] 陈晓杰,李爱珍,王嘉宽,等. Al(0.85)Ga (0.15)As/GaAs 太阳能电池器件工艺优化研究. 半导体光电,2000,12(5):339~345
[14] 郑光文. ITO 膜发展现状及工艺技术分析. 真空与低温,1998,4(1):38~40
[15] 贺洪波,范正修. C 轴择优取向 ZnO 薄膜的溅射工艺与结构研究. 功能材料,2001, 31:34~38
[16] 贺洪波,易葵,范正修. ZnO 薄膜的光学性质研究. 光学学报,1998,18(6):799~802
[17] 贺洪波,范正修. 多种基底上溅射沉积 ZnO 薄膜的结构. 功能材料与器件学报,1999,5(1):66~70
[18] Y.M. Lu, W.S. Hwang, W.Y.Liu, et al. Effect of RF power on optical and electrical properties of ZnO thin film by magnetron sputtering. Materials Chemistry and Physics, 2001, 72:269~272
[19] Y. Yoshino, K. Inoue, M.Takeuchi, et al. Effect of substrate surface morphology and interface microstructure in ZnO thin Films formed on various substrates. Vacuum, 2000, 59:403~410
[20] Y.R. Ryu, S. Zhu, D.C. Look, et al. Synthesis of p-type ZnO Films. Journal of Crystal Growth, 2000, 216:330~334
[21] D. F. Crisler, J. J. Cupal, A. R. Moon, et al. Dielectric, piezoelectric, and electromechan~ ical coupling constants of zinc oxide crystals. Proceedings Letters for the IEEE, 1968, 56:225~226
[22] H. X. Zhang, C. H. Kam, Y. H. Zhou, et al. Optical and electrical properties of sol–gel derived BaTiO3 films on ITO coated glass. Materials Chemistry and Physics, 2000, 63(2): 174~177
[23] Kim Seon-Soon, Choi Se-Young, Park Chan-Gyung. Transparent conductive ITO thin films through the sol~gel process using metal salts. Thin Solid Films, 1999, 347(1~2):155~160
[24] F. Stoica Tionica, T. A. Stoica, V. Vanca. Colloidal sol~gel ITO films on tube grown silicon. Thin Solid Films, 1999, 348(1~2):273~278
[25] S. Masato, H. Masatoshi. Electrical properties of ITO films prepared by tin ion implantation in In2O3 film. Thin Solid Films, 1998, 317(1~2):157~160
[26] 陈猛,白雪冬,黄荣芳,等. 软基片上 ITO 薄膜的光电特性. 功能材料与器件学报,1999, 5(1):61~65
[27] M Quaas, C. Eggs. Structural studies of ITO thin films with the Rietveld method. Thin Solid Films, 1998, 332:277~281
[28] A. Salehi. The effects of deposition rate and substrate temperature of ITO thin films on electrical and optical properties. Thin Solid Films, 1998, 324:214~218
[29] F.O. Adurodija, H. Izumi, T. Ishihara. Highly conducting indium tin oxide (ITO) thin films deposited by pulsed laser ablation. Thin Solid Films, 1999, 350:79~84
[30] T. J. Coutts, X. Wu, W. P. Mulligan. High performance transparent conducting films of cadmiumindate prepared by RF sputtering (C). Mat Res Soc Symp Proc, 1996,426:479
[31] S. Laux, N. Kaiser, A. Zoller, et al. Room-temperature deposition of indium tin oxide thin films with plasma ion~assisted evaporation. Thin Solid Films, 1998, 335:1~5
[32] 程珊华,李育峰. 在有机玻璃基底上制备 ITO 透明导电膜. 微细加工技术,1996,2:54~56
[33] P. Nunes, B. Fernanges, E. Fortunato. Performances presented by zinc oxide thin films deposited by spray pyrolysis. Thin Solid Films, 1999,337:176~179
[34] Z. Y. Ning, S. H. Cheng, S. B. Ge, et al. Preparation and characterization of ZnO:Al films by pulsed laser deposition. Thin Solid Films, 1997,307:50~53
[35] Kim Seon-Soon, Choi Se-Young, Park Chan-Gyung. Transparent conductive ITO thin films through the sol~gel process using metal salts. Thin Solid Films, 1999, 347:155~160
[36] 高鸿锦,刘培正,万博泉. 1998 年中国液晶产业年度报告(摘要). 现代显示,1999, 01:26~28
[37] 宋登元. 仪表和控制设备中的平板显示技术及其进展. 中国仪器仪表,1997,04:32~34
[38] 冯进军,廖复疆,彭自安. 场致发射显示器. 电子科技导报,1998,07:33~35
[39] 陈晓东. 真空镀膜玻璃技术的新成就. 真空与低温,1999,04:21~23
[40] 刘洪武,吴渊,袁剑锋,等. MIM 技术. 液晶与显示,1997,02:4~7
[41] 姜燮昌, 胡勇. ITO 透明导电玻璃的应用前景及工业化生产. 真空,1995,12:8~10
[42] 蒙冕武,邓希敏,刘明登. 射频溅射 Sn 薄膜的工艺研究. 传感器技术,1999,01:36~38
[43] 付恩刚,庄大明,张弓,等. 基体温度对磁控溅射沉积 ZAO 薄膜性能的影响. 真空科学与技术,2003,23:12~15
[44] Jyh-Ming Ting, B.S. Tsai. DC reactive sputter deposition of ZnO:Al thin film on glass. Materials Chemistry and Physics, 2001, 72:273~277
[45] J.F. Chang, M.H. Hon. The effect of deposition temperature on the properties of Al~doped zinc oxide thin films. Thin Sold Films, 2001, 386:79~86
[46] D.H. Zhang, T.L. Yang, J. Ma, et al. Preparation of transparent conducting ZnO:Al films on polymer substrates by r.f. magnetron sputtering. Applied Surface Science, 2000, 158:43~48
[47] J. Ma, F. Ji, D. H. Zhang, et al. Optical and electric properties of transparent conducting ZnO and ZnO:Al films prepared by evaporating method. Thin Solid Films, 1999, 357:98~101
[48] T. Minami, H. Sato, K. Ohashi. Conduction mechanism of highly conductive and transparent zinc oxide thin films prepared by magnetron sputtering. J. Cryst. Growth, 1992, 117:370~374
[49] T.L. Yang, D.H. Zhang, J. Ma, et al. Transparent conducting ZnO:Al films deposited on organic substrates deposited by r.f. magnetron~sputtering. Thins Solid Films, 1998, 326:60~62
[50] T. Minami, H. Sato, H. Imamoto, et al. Substrate temperature dependence of transparent conducting Al~doped ZnO thin films prepared by magnetron sputtering. Journal of Applied Physics, 1992, 31:257~260
[51] S. Brehme, F. Fenske, W. Fuhs, et al. Free~carrier plasma resonance effects and electron transport in reactively sputtered degenerate ZnO:Al films. Thin Solid Films, 1999, 342:167~173
[52] Y. Igasaki, H. Kanma. Argon gas pressure dependence of the properties of transparent conducting ZnO:Al films deposited on glass substrates. Applied Surface Science, 2001, 169~170:508~511
[53] M. Chen, Z.L. Pei, C. Sun, et al. ZAO: an attractive potential substitute for ITO in flat display panels. Materials Science and Engineering B, 2001, 85:212~217
[54] T. Tsuji, M. Hirohashi. Influence of oxygen partial pressure on transparency and conductivity of RF sputtered Al~doped ZnO thin films. Applied Surface Science, 2000, 157:47~51
[55] 葛水兵,程珊华,宁兆元. ZnO:Al 透明导电薄膜的制备及其性能的研究. 材料科学与工程,2000,18:77~79
[56] J.F. Chang, H.L. Wang, M.H. Hon. Studying of transparent conductive ZnO:Al thin films by RF reactive magnetron sputtering. Journal of Crystal Growth. 2000, 211:93~97
[57] M.Chen, Z.L. Pei, C.Sun, et al. Formation of Al~doped ZnO films by dc magnetron reactive sputtering. Materials Letters, 2001, 48:194~198
[58] K. Tominaga, T. Murayama, N. Umezu, et al. Properties of films of multilayered ZnO:Al and ZnO deposited by an alternating sputtering method. Thin Solid Films, 1999, 343~344:160~163
[59] T.L. Yang, D.H. Zhang, J. Ma, et al. Transparent conducting ZnO:Al films deposited on organic substrates deposited by r.f. magnetron~sputtering. Thin Solid Films, 1998, 326:60~62
[60] 陆峰,徐成海,裴志亮,等. 直流磁控反应溅射准备 ZAO 薄膜工艺参数的研究. 真空, 2002, 3:23~26
[61] Z. C. Jin, I. Hamberg, C. G. Granqvist. Reactively sputtered ZnO:Al films for energy efficient windows. Thins Solid Films, 1998, 164:381~386
[62] T. Tsubota, M. Ohatki, K. Eguchi, et al. Thermoelectric properties of ZnO doped with the group 13 elements. 16th International Conference on Thermoelectrics, 1997, 240~242
[63] 陈源,张德恒,马瑾,等. 不同有机衬底上沉积的 ZnO:Al 透明导电膜的研究. 半导体杂志,1999,24(3):1~4
[64] 梁展宏 氧化锌铝陶瓷靶材的制备及其薄膜性能的研究:[硕士学位论文]. 北京:清华大学机械工程系,2001
[65] A. Van der Drift. Evolution Selection. Philips Res. Repts 22, 1967, (267~268):626~631
[66] E.G. Fu, D.M. Zhuang, G. Zhang et al. Effect of technologic parameters on the performances of ZAO thin films deposited by magnetron sputtering. Rare Metal Materials and Engineering, 2002, Supp.1:523~527
[67] 施昌勇,沈克明. 溅射电压和铝掺杂对透明导电氧化锌薄膜性能的影响. 稀有金属,2000,24(2):154~156
[68] T. Minami. New n~type transparent conducting oxides, MRS Bulletin 2000. 25(8)38~44
[69] R. H. Mauch, H. W. Schock. 10th Eur. Photovoltaic Solar Energy Conf. Lisbon, Portugal, 1991, Luwer, Dordrecht, 88~91
[70] T. J. Coutts, D. L. Young, X. N. Li. Characterization of transparent conducting oxides. MRS Bulletin, 2000, 25(8):58~65
[71] M. Chen, Z.L. Pei, C. Sun, et al. Surface characterization of transparent conductive oxide Al-doped ZnO films. Crystal Growth 2000, 220:254~262
[72] 范志新,孙以材,陈玖琳. 氧化物半导体透明导电薄膜的最佳掺杂含量理论计算. 半导体学报,2001, 22 (11):1382～1385
[73] 范志新. 透明导电薄膜最佳掺杂含量的理论计算. 半导体学报,2002, 23 (6) 589~592
[74] 吴彬,王万录,廖克俊,等. 退火处理对透明导电 CdIn2O4 薄膜光学、电学性质及其能带结构的影响. 半导体学报,1997,151(18):31~35
[75] 王力衡,黄运添,郑海涛. 薄膜技术. 北京:清华大学出版社 1991,66~67
[76] Y. Igasaki, H. Saito. Effects of zinc diffusion on the electrical and optical properties of ZnO:Al films prepared by r.f. reactive sputtering. Thin Solid Films, 1991, 199:223~230
[77] H. Lida, T. Mishuku and Y. Hayashi. Optical confinement type a~Si:H solar cell using milky tin oxide on glass. IEEE Trans. Electron Device ED~31, (1934) 718~719
[78] 墙威,赵伯方,称磊,等. ITO 透明导电薄膜的反应离子刻蚀. 微细加工技术,1999, 03:45~47
[79] 范志新,陈玖琳,孙以材,等. AZO 透明导电薄膜的特性、制备和应用. 真空,2000,5:10~13
[80] 果世驹. 粉末烧结理论. 北京:冶金工业出版社,1998. 84~85
[2] 姜燮昌. 我国真空工业的现状与发展. 真空,1999,1:3~7
[3] 姜燮昌. 真空镀膜技术的最新发展. 真空,1999,10:5~8
[4] 李玉增. ITO 薄膜产业化进程概述. 世界有色金属,1998,11:16~19
[5] 李盛锋. 大型平板显示器-等离子显示器. 真空电子技术,1994,5:13~16
[6] 王阳元,T.I. 卡明斯,赵全瑛,等. 多晶硅薄膜及其在集成电路中的应用. 北京:科学技术出版社,1988,5~7
[7] 李言荣,恽正中. 电子材料导论. 北京:清华大学出版社,2001,302~303
[8] 田民波,刘德令. 薄膜科学与技术手册(下册),北京:机械工业出版社,1991,597~601
[9] 段学臣,杨向萍. 新材料 ITO 薄膜的应用和发展. 稀有金属与硬质合金,1999, 138:58~60
[10] 钟毅,王达键,刘荣佩. 铟锡氧化物 (ITO) 靶材的应用和制备技术. 昆明理工大学学报,1997,22(1):66~70
[11] R. Anil Kumar, M.S. Suresh, J. Nagaraju. Measurement and comparison of AC parameters of silicon (BSR and BSFR) and gallium arsenide (GaAs/Ge) solar cells used in space applications. Solar Energy Materials & Solar Cells, 2000, 60:155~166
[12] A. Terakawa, M. Shima, M. Isomura, et al. Effect of the optical gap on the temperature dependence of a~SiGe solar cell stability. Journal of Non~Crystalline Solids, 1998, 227~230:1267~1271
[13] 陈晓杰,李爱珍,王嘉宽,等. Al(0.85)Ga (0.15)As/GaAs 太阳能电池器件工艺优化研究. 半导体光电,2000,12(5):339~345
[14] 郑光文. ITO 膜发展现状及工艺技术分析. 真空与低温,1998,4(1):38~40
[15] 贺洪波,范正修. C 轴择优取向 ZnO 薄膜的溅射工艺与结构研究. 功能材料,2001, 31:34~38
[16] 贺洪波,易葵,范正修. ZnO 薄膜的光学性质研究. 光学学报,1998,18(6):799~802
[17] 贺洪波,范正修. 多种基底上溅射沉积 ZnO 薄膜的结构. 功能材料与器件学报,1999,5(1):66~70
[18] Y.M. Lu, W.S. Hwang, W.Y.Liu, et al. Effect of RF power on optical and electrical properties of ZnO thin film by magnetron sputtering. Materials Chemistry and Physics, 2001, 72:269~272
[19] Y. Yoshino, K. Inoue, M.Takeuchi, et al. Effect of substrate surface morphology and interface microstructure in ZnO thin Films formed on various substrates. Vacuum, 2000, 59:403~410
[20] Y.R. Ryu, S. Zhu, D.C. Look, et al. Synthesis of p-type ZnO Films. Journal of Crystal Growth, 2000, 216:330~334
[21] D. F. Crisler, J. J. Cupal, A. R. Moon, et al. Dielectric, piezoelectric, and electromechan~ ical coupling constants of zinc oxide crystals. Proceedings Letters for the IEEE, 1968, 56:225~226
[22] H. X. Zhang, C. H. Kam, Y. H. Zhou, et al. Optical and electrical properties of sol–gel derived BaTiO3 films on ITO coated glass. Materials Chemistry and Physics, 2000, 63(2): 174~177
[23] Kim Seon-Soon, Choi Se-Young, Park Chan-Gyung. Transparent conductive ITO thin films through the sol~gel process using metal salts. Thin Solid Films, 1999, 347(1~2):155~160
[24] F. Stoica Tionica, T. A. Stoica, V. Vanca. Colloidal sol~gel ITO films on tube grown silicon. Thin Solid Films, 1999, 348(1~2):273~278
[25] S. Masato, H. Masatoshi. Electrical properties of ITO films prepared by tin ion implantation in In2O3 film. Thin Solid Films, 1998, 317(1~2):157~160
[26] 陈猛,白雪冬,黄荣芳,等. 软基片上 ITO 薄膜的光电特性. 功能材料与器件学报,1999, 5(1):61~65
[27] M Quaas, C. Eggs. Structural studies of ITO thin films with the Rietveld method. Thin Solid Films, 1998, 332:277~281
[28] A. Salehi. The effects of deposition rate and substrate temperature of ITO thin films on electrical and optical properties. Thin Solid Films, 1998, 324:214~218
[29] F.O. Adurodija, H. Izumi, T. Ishihara. Highly conducting indium tin oxide (ITO) thin films deposited by pulsed laser ablation. Thin Solid Films, 1999, 350:79~84
[30] T. J. Coutts, X. Wu, W. P. Mulligan. High performance transparent conducting films of cadmiumindate prepared by RF sputtering (C). Mat Res Soc Symp Proc, 1996,426:479
[31] S. Laux, N. Kaiser, A. Zoller, et al. Room-temperature deposition of indium tin oxide thin films with plasma ion~assisted evaporation. Thin Solid Films, 1998, 335:1~5
[32] 程珊华,李育峰. 在有机玻璃基底上制备 ITO 透明导电膜. 微细加工技术,1996,2:54~56
[33] P. Nunes, B. Fernanges, E. Fortunato. Performances presented by zinc oxide thin films deposited by spray pyrolysis. Thin Solid Films, 1999,337:176~179
[34] Z. Y. Ning, S. H. Cheng, S. B. Ge, et al. Preparation and characterization of ZnO:Al films by pulsed laser deposition. Thin Solid Films, 1997,307:50~53
[35] Kim Seon-Soon, Choi Se-Young, Park Chan-Gyung. Transparent conductive ITO thin films through the sol~gel process using metal salts. Thin Solid Films, 1999, 347:155~160
[36] 高鸿锦,刘培正,万博泉. 1998 年中国液晶产业年度报告(摘要). 现代显示,1999, 01:26~28
[37] 宋登元. 仪表和控制设备中的平板显示技术及其进展. 中国仪器仪表,1997,04:32~34
[38] 冯进军,廖复疆,彭自安. 场致发射显示器. 电子科技导报,1998,07:33~35
[39] 陈晓东. 真空镀膜玻璃技术的新成就. 真空与低温,1999,04:21~23
[40] 刘洪武,吴渊,袁剑锋,等. MIM 技术. 液晶与显示,1997,02:4~7
[41] 姜燮昌, 胡勇. ITO 透明导电玻璃的应用前景及工业化生产. 真空,1995,12:8~10
[42] 蒙冕武,邓希敏,刘明登. 射频溅射 Sn 薄膜的工艺研究. 传感器技术,1999,01:36~38
[43] 付恩刚,庄大明,张弓,等. 基体温度对磁控溅射沉积 ZAO 薄膜性能的影响. 真空科学与技术,2003,23:12~15
[44] Jyh-Ming Ting, B.S. Tsai. DC reactive sputter deposition of ZnO:Al thin film on glass. Materials Chemistry and Physics, 2001, 72:273~277
[45] J.F. Chang, M.H. Hon. The effect of deposition temperature on the properties of Al~doped zinc oxide thin films. Thin Sold Films, 2001, 386:79~86
[46] D.H. Zhang, T.L. Yang, J. Ma, et al. Preparation of transparent conducting ZnO:Al films on polymer substrates by r.f. magnetron sputtering. Applied Surface Science, 2000, 158:43~48
[47] J. Ma, F. Ji, D. H. Zhang, et al. Optical and electric properties of transparent conducting ZnO and ZnO:Al films prepared by evaporating method. Thin Solid Films, 1999, 357:98~101
[48] T. Minami, H. Sato, K. Ohashi. Conduction mechanism of highly conductive and transparent zinc oxide thin films prepared by magnetron sputtering. J. Cryst. Growth, 1992, 117:370~374
[49] T.L. Yang, D.H. Zhang, J. Ma, et al. Transparent conducting ZnO:Al films deposited on organic substrates deposited by r.f. magnetron~sputtering. Thins Solid Films, 1998, 326:60~62
[50] T. Minami, H. Sato, H. Imamoto, et al. Substrate temperature dependence of transparent conducting Al~doped ZnO thin films prepared by magnetron sputtering. Journal of Applied Physics, 1992, 31:257~260
[51] S. Brehme, F. Fenske, W. Fuhs, et al. Free~carrier plasma resonance effects and electron transport in reactively sputtered degenerate ZnO:Al films. Thin Solid Films, 1999, 342:167~173
[52] Y. Igasaki, H. Kanma. Argon gas pressure dependence of the properties of transparent conducting ZnO:Al films deposited on glass substrates. Applied Surface Science, 2001, 169~170:508~511
[53] M. Chen, Z.L. Pei, C. Sun, et al. ZAO: an attractive potential substitute for ITO in flat display panels. Materials Science and Engineering B, 2001, 85:212~217
[54] T. Tsuji, M. Hirohashi. Influence of oxygen partial pressure on transparency and conductivity of RF sputtered Al~doped ZnO thin films. Applied Surface Science, 2000, 157:47~51
[55] 葛水兵,程珊华,宁兆元. ZnO:Al 透明导电薄膜的制备及其性能的研究. 材料科学与工程,2000,18:77~79
[56] J.F. Chang, H.L. Wang, M.H. Hon. Studying of transparent conductive ZnO:Al thin films by RF reactive magnetron sputtering. Journal of Crystal Growth. 2000, 211:93~97
[57] M.Chen, Z.L. Pei, C.Sun, et al. Formation of Al~doped ZnO films by dc magnetron reactive sputtering. Materials Letters, 2001, 48:194~198
[58] K. Tominaga, T. Murayama, N. Umezu, et al. Properties of films of multilayered ZnO:Al and ZnO deposited by an alternating sputtering method. Thin Solid Films, 1999, 343~344:160~163
[59] T.L. Yang, D.H. Zhang, J. Ma, et al. Transparent conducting ZnO:Al films deposited on organic substrates deposited by r.f. magnetron~sputtering. Thin Solid Films, 1998, 326:60~62
[60] 陆峰,徐成海,裴志亮,等. 直流磁控反应溅射准备 ZAO 薄膜工艺参数的研究. 真空, 2002, 3:23~26
[61] Z. C. Jin, I. Hamberg, C. G. Granqvist. Reactively sputtered ZnO:Al films for energy efficient windows. Thins Solid Films, 1998, 164:381~386
[62] T. Tsubota, M. Ohatki, K. Eguchi, et al. Thermoelectric properties of ZnO doped with the group 13 elements. 16th International Conference on Thermoelectrics, 1997, 240~242
[63] 陈源,张德恒,马瑾,等. 不同有机衬底上沉积的 ZnO:Al 透明导电膜的研究. 半导体杂志,1999,24(3):1~4
[64] 梁展宏 氧化锌铝陶瓷靶材的制备及其薄膜性能的研究:[硕士学位论文]. 北京:清华大学机械工程系,2001
[65] A. Van der Drift. Evolution Selection. Philips Res. Repts 22, 1967, (267~268):626~631
[66] E.G. Fu, D.M. Zhuang, G. Zhang et al. Effect of technologic parameters on the performances of ZAO thin films deposited by magnetron sputtering. Rare Metal Materials and Engineering, 2002, Supp.1:523~527
[67] 施昌勇,沈克明. 溅射电压和铝掺杂对透明导电氧化锌薄膜性能的影响. 稀有金属,2000,24(2):154~156
[68] T. Minami. New n~type transparent conducting oxides, MRS Bulletin 2000. 25(8)38~44
[69] R. H. Mauch, H. W. Schock. 10th Eur. Photovoltaic Solar Energy Conf. Lisbon, Portugal, 1991, Luwer, Dordrecht, 88~91
[70] T. J. Coutts, D. L. Young, X. N. Li. Characterization of transparent conducting oxides. MRS Bulletin, 2000, 25(8):58~65
[71] M. Chen, Z.L. Pei, C. Sun, et al. Surface characterization of transparent conductive oxide Al-doped ZnO films. Crystal Growth 2000, 220:254~262
[72] 范志新,孙以材,陈玖琳. 氧化物半导体透明导电薄膜的最佳掺杂含量理论计算. 半导体学报,2001, 22 (11):1382～1385
[73] 范志新. 透明导电薄膜最佳掺杂含量的理论计算. 半导体学报,2002, 23 (6) 589~592
[74] 吴彬,王万录,廖克俊,等. 退火处理对透明导电 CdIn2O4 薄膜光学、电学性质及其能带结构的影响. 半导体学报,1997,151(18):31~35
[75] 王力衡,黄运添,郑海涛. 薄膜技术. 北京:清华大学出版社 1991,66~67
[76] Y. Igasaki, H. Saito. Effects of zinc diffusion on the electrical and optical properties of ZnO:Al films prepared by r.f. reactive sputtering. Thin Solid Films, 1991, 199:223~230
[77] H. Lida, T. Mishuku and Y. Hayashi. Optical confinement type a~Si:H solar cell using milky tin oxide on glass. IEEE Trans. Electron Device ED~31, (1934) 718~719
[78] 墙威,赵伯方,称磊,等. ITO 透明导电薄膜的反应离子刻蚀. 微细加工技术,1999, 03:45~47
[79] 范志新,陈玖琳,孙以材,等. AZO 透明导电薄膜的特性、制备和应用. 真空,2000,5:10~13
[80] 果世驹. 粉末烧结理论. 北京:冶金工业出版社,1998. 84~85