非致冷红外探测材料InGaAs的生长和性质研究
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摘要
非致冷红外探测器及其列阵是近年红外探测器发展的一个新趋势。Ⅲ-Ⅴ族InGaAs半导体材料特别是与InP衬底匹配的In_(0.53)Ga_(0.47)As已经表明它是用于0.9μm—1.7μm近红外波段的一种首选的非致冷红外探测器材料。InGaAs红外探测器及其焦平面列阵主要应用在成像和光谱两方面。
本论文采用自行研制的LPMOCVD系统生长了In_xGa_(1-x)As/InP材料，详细研究LPMOCVD生长条件对In_(0.53)Ga_(0.47)As材料性质的影响，并且对材料性质进行了表征研究。实验表明：
生长温度是一个重要的生长参数，它对外延层的表面形貌、组分、结晶质量、迁移率、载流子浓度有着很大影响。在生长温度为630℃—650℃，能够得到高质量的In_(0.53)Ga_(0.47)As材料。
Ⅴ/Ⅲ比对外延层的表面形貌有较大影响，增大Ⅴ/Ⅲ比有利于提高材料的结晶质量；随着Ⅴ/Ⅲ比增加，迁移率升高；本征载流子浓度随着Ⅴ/Ⅲ比减少而降低；AsH_3和PH_3转换时间在10秒到30秒之间可以获得质量较好的InGaAs外延层；在InP缓冲层厚度为0.2μm时迁移率达到最大，载流子浓度达到最低。
本文研究了生长条件对InGaAs室温和低温(10K)光致发光谱的影响。在生长温度为550℃时，InGaAs的10K光致发光谱是由两个峰组成，在生长温度为630℃和650℃时，样品的光致发光谱中变为只有一个峰，而且在650℃发光强度比630℃强，发光谱的半峰宽也是650℃最窄。当生长温度到达680℃时，光致发光谱变成由两个峰组成。讨论In_(0.53)Ga_(0.47)As／InP的变激发强度和变温光致发光谱，计算了不同温度下的In_(0.53)Ga_(0.47)As光致发光谱峰值能量。
本文研究了生长条件对InGaAs微区拉曼散射光谱的影响。在拉曼散射中出现的FLA峰，标志有序和无序程度不同。测量了In_(0.53)Ga_(0.47)As／InP材料的变温拉曼散射谱，从拉曼谱中得GaAs的LO的偏移计算了不同温度下In_(0.53)Ga_(0.47)As外延层所受到的应力。
最后，采用LPMOCVD技术制备InGaAs红外焦平面列阵器件结构材料，对器件结构材料进行了表征。
Uncooled infrared detectors and arrays are one of the most important developments in the infrared detection. InxGai.xAs ternary alloy has been of great interest for short wavelength infrared detector application. The x=0.53 InxGai.xAs alloy is lattice-matched to InP substrate and covers the wavelength range from 0.9 to 1.7 um. At present, InGaAs is becoming the best choice for room temperature operation in the 1-3 um spectrum. The imaging and spectroscopy are the major applications of InGaAs focal plane array.
In this thesis. InxGai.xAs/InP heterostructure was grown by low pressure metalorganic chemical vapor deposition (LPMOCVD) technique. The LPMOCVD system was made by our group. The growth and characterization of Ino.53Gao.47As ternary alloy were studied in detail. The experiments show:
Growth temperature is one of the key growth parameter by which the surface morphology, alloy composition, crystalline quality, mobility and carrier concentration are influenced. The high quality Ino.53Gao.47As can be obtained in the range of 630C -650 C.
The surface morphology is greatly influenced by V/III ratio. Increasing V/II1 ratio is of great advantage to obtain high quality of Ino.53Gao.47As. The mobility of InGaAs epilayer increases when increasing the V/III ratio. The intrinsic carrier concentration reduces when decreasing the V / III ratio. The high quality of In0.53Gao.47As can be obtained at the range of 10-30 seconds of exchange time between AsHs and PHs. When the thickness of the buffer layer between the InP
substrate and InGaAs epilayer is 0.2 um the mobility becomes the maximum and the carrier concentration is the lowest.
Effect of growth parameters on photoluminescence of room temperature and low temperature (10K) was studied. Two PL peaks are found in the InGaAs PL spectrum at 10K when growth temperature is at 550C. Only one PL peak is found when growth temperature is in the range between 630C and 650C, the intensity of PL at 650C is more than one at 630C. The FWHM of PL at 650C is the narrowest .The variation of PL with excited intensity and temperatures were discussed respectively. The peak energy of PL at varied temperatures is calculated.
Effect of growth parameters on Raman scattering spectra of InGaAs was also studied. Micro-Raman scattering experiments have identified the extra mode as a folded-longitudinal-acoustic (FLA) phonon mode; the intensity of this peak can be used as a measure of ordering of InGaAs. Temperature-varied Raman scattering spectra were obtained from 80K to 300K. The difference in the frequencies of their GaAs-like longitudinal optical phonons was used to calculate stress for the In0.53Ga0.47As/InP. leading to a direct formula for the evaluation of the layer stress.
High quality wafer with InGaAs detector array have been successfully grown by LPMOCVD and were characterized.
本论文采用自行研制的LPMOCVD系统生长了In_xGa_(1-x)As/InP材料，详细研究LPMOCVD生长条件对In_(0.53)Ga_(0.47)As材料性质的影响，并且对材料性质进行了表征研究。实验表明：
生长温度是一个重要的生长参数，它对外延层的表面形貌、组分、结晶质量、迁移率、载流子浓度有着很大影响。在生长温度为630℃—650℃，能够得到高质量的In_(0.53)Ga_(0.47)As材料。
Ⅴ/Ⅲ比对外延层的表面形貌有较大影响，增大Ⅴ/Ⅲ比有利于提高材料的结晶质量；随着Ⅴ/Ⅲ比增加，迁移率升高；本征载流子浓度随着Ⅴ/Ⅲ比减少而降低；AsH_3和PH_3转换时间在10秒到30秒之间可以获得质量较好的InGaAs外延层；在InP缓冲层厚度为0.2μm时迁移率达到最大，载流子浓度达到最低。
本文研究了生长条件对InGaAs室温和低温(10K)光致发光谱的影响。在生长温度为550℃时，InGaAs的10K光致发光谱是由两个峰组成，在生长温度为630℃和650℃时，样品的光致发光谱中变为只有一个峰，而且在650℃发光强度比630℃强，发光谱的半峰宽也是650℃最窄。当生长温度到达680℃时，光致发光谱变成由两个峰组成。讨论In_(0.53)Ga_(0.47)As／InP的变激发强度和变温光致发光谱，计算了不同温度下的In_(0.53)Ga_(0.47)As光致发光谱峰值能量。
本文研究了生长条件对InGaAs微区拉曼散射光谱的影响。在拉曼散射中出现的FLA峰，标志有序和无序程度不同。测量了In_(0.53)Ga_(0.47)As／InP材料的变温拉曼散射谱，从拉曼谱中得GaAs的LO的偏移计算了不同温度下In_(0.53)Ga_(0.47)As外延层所受到的应力。
最后，采用LPMOCVD技术制备InGaAs红外焦平面列阵器件结构材料，对器件结构材料进行了表征。
Uncooled infrared detectors and arrays are one of the most important developments in the infrared detection. InxGai.xAs ternary alloy has been of great interest for short wavelength infrared detector application. The x=0.53 InxGai.xAs alloy is lattice-matched to InP substrate and covers the wavelength range from 0.9 to 1.7 um. At present, InGaAs is becoming the best choice for room temperature operation in the 1-3 um spectrum. The imaging and spectroscopy are the major applications of InGaAs focal plane array.
In this thesis. InxGai.xAs/InP heterostructure was grown by low pressure metalorganic chemical vapor deposition (LPMOCVD) technique. The LPMOCVD system was made by our group. The growth and characterization of Ino.53Gao.47As ternary alloy were studied in detail. The experiments show:
Growth temperature is one of the key growth parameter by which the surface morphology, alloy composition, crystalline quality, mobility and carrier concentration are influenced. The high quality Ino.53Gao.47As can be obtained in the range of 630C -650 C.
The surface morphology is greatly influenced by V/III ratio. Increasing V/II1 ratio is of great advantage to obtain high quality of Ino.53Gao.47As. The mobility of InGaAs epilayer increases when increasing the V/III ratio. The intrinsic carrier concentration reduces when decreasing the V / III ratio. The high quality of In0.53Gao.47As can be obtained at the range of 10-30 seconds of exchange time between AsHs and PHs. When the thickness of the buffer layer between the InP
substrate and InGaAs epilayer is 0.2 um the mobility becomes the maximum and the carrier concentration is the lowest.
Effect of growth parameters on photoluminescence of room temperature and low temperature (10K) was studied. Two PL peaks are found in the InGaAs PL spectrum at 10K when growth temperature is at 550C. Only one PL peak is found when growth temperature is in the range between 630C and 650C, the intensity of PL at 650C is more than one at 630C. The FWHM of PL at 650C is the narrowest .The variation of PL with excited intensity and temperatures were discussed respectively. The peak energy of PL at varied temperatures is calculated.
Effect of growth parameters on Raman scattering spectra of InGaAs was also studied. Micro-Raman scattering experiments have identified the extra mode as a folded-longitudinal-acoustic (FLA) phonon mode; the intensity of this peak can be used as a measure of ordering of InGaAs. Temperature-varied Raman scattering spectra were obtained from 80K to 300K. The difference in the frequencies of their GaAs-like longitudinal optical phonons was used to calculate stress for the In0.53Ga0.47As/InP. leading to a direct formula for the evaluation of the layer stress.
High quality wafer with InGaAs detector array have been successfully grown by LPMOCVD and were characterized.
引文
[1] B. Foucher. Infrared machine vision: a new contender. SPIE. 1999, 3700:210-213
[2] 孙志君．红外焦平面阵列技术的军用市场展望．传感器世界，1999，5：1-8
[3] 孙志君．红外焦平面阵列技术的民用市场展望．传感器世界，1999，1：1-6
[4] A. Rogalski. Infrared detector at the beginning of the next millennium. Sensors and materials, 2000, 12(5):233-288
[5] 顾聚兴．第三代红外成像器(上)．红外，2002，8：30-33
[6] M. Razeghi. Roadmap of semiconductor infrared lasers and detectors for 21st century. SPIE, 1999, 3629:2-40
[7] D.A. Scribner, M.R. Kruer, J.M. Killiany. Infrared focal plane array technology. Proc. IEEE, 1991, 1:66-85
[8] 程开富．红外焦平面阵列用信号处理电路．国外电子元器件，2000，2：54-58
[9] R.S. Balcerak. Uncooled IR imaging: technology for the next generation. SPIE, 1999, 3698: 110-118
[10] J.T. Wimmers, D.S. Smith. Characteristics of InSb photovoltaic detectors 77K and below. SPIE, 1983, 364:123-131
[11] S. Shirouzu, T. Tsuji, N. Harada, T. Sado, S. Aihara, R. Tsunoda, and T. Kanno. 64×64 InSb focal plane array with improved two layer structure. SPIE, 1986, 661:419-425
[12] W.J. Parrish, J.D. Blackwell, R.C. Paulson, H. Arnold. 128×128 MWIR InSb focal plane and camera system. SPIE, 1986, 1512:68-77
[13] A. Hoffman, D. Randall. High performance 256×256 InSb FPA for astronomy. SPIE, 1991, 1540:297-302
[14] A.M. Fowler, J.B. Heynssens, I. Gatley, F.J. Vrba, H.D. Ables, A. Hoffman and J. Woolaway. The 1024×1024 InSb array: test results. SPIE, 1995, 2475:27-31
[15] K.W. Hodapp. Near-infrared detector arrays current state of tile art. SPIE, 2000, 4008: 1228-1236
[16] E. Michel, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Fevguson, and M. Razeghi. Molecular beam growth of high quality InSb. Appl. Phys. Leu., 1994, 65:3338-3340
[17] E. Michel. J. Xu, J.D. Kim. InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy. IEEE Photonics Technol. Lett, 1996, 8:673-675
[18] M.H. Ettenberg, M.J. Lange, M.T. Ogrady, J.S. Vermaak, M.J.Cohen, G.H. Olsen. Room temperature 640×512 pixel near-infrared InGaAs focal plane array. SPIE, 2000, 4028:201-207
[19] R.W.M. Hoogeveen, R.J. Van der A, A.P.H. Goede. Extended wavelength InGaAs infrared(1.0-2.4μm) detector arrays on sciamachy for space-based spectrometry of the earth atrnosphere. Infrared Physics & Technology, 2001,42:1-16
[20] G.H. Olsen, P.E. Dixon, M.,J. Lange, J.J. Sudol, M.J. Cohen, A.R. Sugg, J.C. Dries. Photodetector arrays from 100mm diameter InGaAs/InP epitaxial wafers.J. Crystal Growth, 2001. 222:693-696
[21] Y. Kang, P. Mages, A.R. Clawson, S.S. Lau, Y.H. Lao, P.K.L. Yu, A. Pauchard, Z, Zhu, Y. Zhou. Wafer-fused p-i-n InGaAs/Si photodiode with photogain. App. Phy. Lett, 2001, 79(7): 970-972
[22] P. Merken, L. Zimmermann, J.John, S. Nemeth, M. Gastal, G. Borghs, C. Van Hoof. InAsSb
and InGaAs linear and focal-plane arrays. SPIE, 2000, 4028:246-251
[23] Li Shuwei, Jin Yixin, Zhang Baolin, Zhou Tianming, Jiang Hong, and Ning Yongqiang. Uncooled GalnAsSb Infrared Detectors grown by Metalorganic Chemical Vapor Deposition. Acta Phvsica Sinica, 1997, 6(6):401-405
[24] J.D. Kim, E. Michel, S. Park, J. Xu, S. Javadpour and M. Razeghi. Room Temperature operation of InTlSb infrared photodetectors on GaAs. Appl. Phys. Lett, 1996, 69:343-344
[25] J.J. LEE, J.D. Kim, M. Razeghi. Exploration of novel InSbBi alloy for uncooled infrared photodetector applications. Journal of the Korean Physical Society, 1999, 35:275-278
[26] C. Jelen, S.Slivken. T. David, G. Brown, M. Razeghi. Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors. SPIE, 1998, 3278:96-104
[27] H.C. Liu, M. Gao. J. McCaffrey, Z.R. Wasilewski, and S. Fafard. Quantum dot infrared photodetectors. Appl. Phy. Lett. 2001.78(1):79-81
[28] J. Phillips, K. Kamath, P. Bhattacharya. Far-infrared photoconductivity in self-organized InAs. Appl.Phys. Lett, 1998, 72(16):2020-2022
[29] D. Pair. Y.P. Zeng, M.Y. Kong, J. Wu, Y.Q. Zhu, C.H. Zhang, J.M. Li, and C.Y. Wang. Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice. Electron. Lett, 1996, 32:726-1727
[2] 孙志君．红外焦平面阵列技术的军用市场展望．传感器世界，1999，5：1-8
[3] 孙志君．红外焦平面阵列技术的民用市场展望．传感器世界，1999，1：1-6
[4] A. Rogalski. Infrared detector at the beginning of the next millennium. Sensors and materials, 2000, 12(5):233-288
[5] 顾聚兴．第三代红外成像器(上)．红外，2002，8：30-33
[6] M. Razeghi. Roadmap of semiconductor infrared lasers and detectors for 21st century. SPIE, 1999, 3629:2-40
[7] D.A. Scribner, M.R. Kruer, J.M. Killiany. Infrared focal plane array technology. Proc. IEEE, 1991, 1:66-85
[8] 程开富．红外焦平面阵列用信号处理电路．国外电子元器件，2000，2：54-58
[9] R.S. Balcerak. Uncooled IR imaging: technology for the next generation. SPIE, 1999, 3698: 110-118
[10] J.T. Wimmers, D.S. Smith. Characteristics of InSb photovoltaic detectors 77K and below. SPIE, 1983, 364:123-131
[11] S. Shirouzu, T. Tsuji, N. Harada, T. Sado, S. Aihara, R. Tsunoda, and T. Kanno. 64×64 InSb focal plane array with improved two layer structure. SPIE, 1986, 661:419-425
[12] W.J. Parrish, J.D. Blackwell, R.C. Paulson, H. Arnold. 128×128 MWIR InSb focal plane and camera system. SPIE, 1986, 1512:68-77
[13] A. Hoffman, D. Randall. High performance 256×256 InSb FPA for astronomy. SPIE, 1991, 1540:297-302
[14] A.M. Fowler, J.B. Heynssens, I. Gatley, F.J. Vrba, H.D. Ables, A. Hoffman and J. Woolaway. The 1024×1024 InSb array: test results. SPIE, 1995, 2475:27-31
[15] K.W. Hodapp. Near-infrared detector arrays current state of tile art. SPIE, 2000, 4008: 1228-1236
[16] E. Michel, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Fevguson, and M. Razeghi. Molecular beam growth of high quality InSb. Appl. Phys. Leu., 1994, 65:3338-3340
[17] E. Michel. J. Xu, J.D. Kim. InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy. IEEE Photonics Technol. Lett, 1996, 8:673-675
[18] M.H. Ettenberg, M.J. Lange, M.T. Ogrady, J.S. Vermaak, M.J.Cohen, G.H. Olsen. Room temperature 640×512 pixel near-infrared InGaAs focal plane array. SPIE, 2000, 4028:201-207
[19] R.W.M. Hoogeveen, R.J. Van der A, A.P.H. Goede. Extended wavelength InGaAs infrared(1.0-2.4μm) detector arrays on sciamachy for space-based spectrometry of the earth atrnosphere. Infrared Physics & Technology, 2001,42:1-16
[20] G.H. Olsen, P.E. Dixon, M.,J. Lange, J.J. Sudol, M.J. Cohen, A.R. Sugg, J.C. Dries. Photodetector arrays from 100mm diameter InGaAs/InP epitaxial wafers.J. Crystal Growth, 2001. 222:693-696
[21] Y. Kang, P. Mages, A.R. Clawson, S.S. Lau, Y.H. Lao, P.K.L. Yu, A. Pauchard, Z, Zhu, Y. Zhou. Wafer-fused p-i-n InGaAs/Si photodiode with photogain. App. Phy. Lett, 2001, 79(7): 970-972
[22] P. Merken, L. Zimmermann, J.John, S. Nemeth, M. Gastal, G. Borghs, C. Van Hoof. InAsSb
and InGaAs linear and focal-plane arrays. SPIE, 2000, 4028:246-251
[23] Li Shuwei, Jin Yixin, Zhang Baolin, Zhou Tianming, Jiang Hong, and Ning Yongqiang. Uncooled GalnAsSb Infrared Detectors grown by Metalorganic Chemical Vapor Deposition. Acta Phvsica Sinica, 1997, 6(6):401-405
[24] J.D. Kim, E. Michel, S. Park, J. Xu, S. Javadpour and M. Razeghi. Room Temperature operation of InTlSb infrared photodetectors on GaAs. Appl. Phys. Lett, 1996, 69:343-344
[25] J.J. LEE, J.D. Kim, M. Razeghi. Exploration of novel InSbBi alloy for uncooled infrared photodetector applications. Journal of the Korean Physical Society, 1999, 35:275-278
[26] C. Jelen, S.Slivken. T. David, G. Brown, M. Razeghi. Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors. SPIE, 1998, 3278:96-104
[27] H.C. Liu, M. Gao. J. McCaffrey, Z.R. Wasilewski, and S. Fafard. Quantum dot infrared photodetectors. Appl. Phy. Lett. 2001.78(1):79-81
[28] J. Phillips, K. Kamath, P. Bhattacharya. Far-infrared photoconductivity in self-organized InAs. Appl.Phys. Lett, 1998, 72(16):2020-2022
[29] D. Pair. Y.P. Zeng, M.Y. Kong, J. Wu, Y.Q. Zhu, C.H. Zhang, J.M. Li, and C.Y. Wang. Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice. Electron. Lett, 1996, 32:726-1727