磁控溅射制备TiB_2薄膜及薄膜特性研究
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摘要
电厂的安全生产需要对大型高温管线进行损伤分析、寿命监测与预测维修,而高温管线的寿命在线监测关键就是依靠可长时间、高精度、稳定工作的高温应变计。目前国内应用的高温应变计如PtW丝式应变计、PdCr丝式应变计、半导体薄膜式应变传感器等,大多存在横向效应大、热输出大、寿命短、价格昂贵等缺点。因此寻找一种精度高、稳定性好、价格低廉的高温应变材料是非常有意义的。本文主要研究了在高温应变传感器中有重要应用前景的TiB2半导体薄膜的制备、表征、微观结构和电学特性。论文包括如下几个方面内容：
1.采用磁控溅射方法制备出了TiB2半导体薄膜,利用SEM、EDS、XRD对薄膜进行结构和成分表征,重点考察了溅射时问对薄膜厚度的影响：采用磁控溅射方法,保持溅射功率、溅射气压不变,TiB2薄膜的厚度和溅射时间呈线性关系。
2.对溅射态的TiB2薄膜样品用AFM、四探针法(FPP)等测试分析手段研究了微观结构、电学特性,同时采用悬臂梁法和自行设计的实验装置测量了半导体薄膜的电阻应变系数(GF)、电阻温度系数(TCR)。薄膜样品的表观颗粒尺寸随厚度增大而增大,方阻随厚度增大而减小,电阻率不随厚度改变。
3.对溅射态的TiB2薄膜样品进行了热处理,比较了热处理前后薄膜结构、形貌、电学性能的变化。热处理后的薄膜晶化,在厚度不变的条件下,薄膜方阻随热处理温度的上升而上升,薄膜在一个温度周期内电阻迟滞减小,薄膜的电阻性能趋于稳定。
Safety of power plants requires damage analysis, life monitoring, predictive maintenance of large high-temperature pipelines. And the key to on-line monitoring of high-temperature pipelines'life is a high-temperature strain gauge working at long time, high precision and high stability. At present, high-temperature strain gauge application such as PtW wire strain gauge, PdCr wire strain gauge and semiconductor thin film strain sensor are mostly of great transverse effect, thermal output, short life and expensive. Therefore looking for a high precision, good stability and low cost material for high-temperature strain gauge is very significant. This paper mainly researches about preparation, characterization, microstructure and electrical properties of TiB2 semiconductor thin film, which has a good prospect in high-temperature strain gauge in the future. Include the followings:
1. TiB2 semiconductor thin film was prepared by magnetron sputtering methods, then structure and composition characterization were studied by SEM, EDS and XRD, the effect of sputtering time on film thickness was mainly inspected. Thickness of TiB2 thin film and sputtering time were linear relationship.
2. Structures, electrical characteristics of as-sputtered film samples were researched by AFM, FPP. GF, TCR of TiB2 semiconductor thin film were studied by cantilever beam method and self-designed experimental device. Table view particles size of thin film samples grew while thickness increased, sheet resistance decreased when thickness increased, resistance rate did not change when thickness change.
3. The as-sputtered thin film samples were under some heat treatments, structure, morphology and electrical properties were compared before and after heat treatment. Heat treatment had a result of crystallization of the TiB2 thin film, sheet resistance increased when temperature of heat treatment increased.
1.采用磁控溅射方法制备出了TiB2半导体薄膜,利用SEM、EDS、XRD对薄膜进行结构和成分表征,重点考察了溅射时问对薄膜厚度的影响：采用磁控溅射方法,保持溅射功率、溅射气压不变,TiB2薄膜的厚度和溅射时间呈线性关系。
2.对溅射态的TiB2薄膜样品用AFM、四探针法(FPP)等测试分析手段研究了微观结构、电学特性,同时采用悬臂梁法和自行设计的实验装置测量了半导体薄膜的电阻应变系数(GF)、电阻温度系数(TCR)。薄膜样品的表观颗粒尺寸随厚度增大而增大,方阻随厚度增大而减小,电阻率不随厚度改变。
3.对溅射态的TiB2薄膜样品进行了热处理,比较了热处理前后薄膜结构、形貌、电学性能的变化。热处理后的薄膜晶化,在厚度不变的条件下,薄膜方阻随热处理温度的上升而上升,薄膜在一个温度周期内电阻迟滞减小,薄膜的电阻性能趋于稳定。
Safety of power plants requires damage analysis, life monitoring, predictive maintenance of large high-temperature pipelines. And the key to on-line monitoring of high-temperature pipelines'life is a high-temperature strain gauge working at long time, high precision and high stability. At present, high-temperature strain gauge application such as PtW wire strain gauge, PdCr wire strain gauge and semiconductor thin film strain sensor are mostly of great transverse effect, thermal output, short life and expensive. Therefore looking for a high precision, good stability and low cost material for high-temperature strain gauge is very significant. This paper mainly researches about preparation, characterization, microstructure and electrical properties of TiB2 semiconductor thin film, which has a good prospect in high-temperature strain gauge in the future. Include the followings:
1. TiB2 semiconductor thin film was prepared by magnetron sputtering methods, then structure and composition characterization were studied by SEM, EDS and XRD, the effect of sputtering time on film thickness was mainly inspected. Thickness of TiB2 thin film and sputtering time were linear relationship.
2. Structures, electrical characteristics of as-sputtered film samples were researched by AFM, FPP. GF, TCR of TiB2 semiconductor thin film were studied by cantilever beam method and self-designed experimental device. Table view particles size of thin film samples grew while thickness increased, sheet resistance decreased when thickness increased, resistance rate did not change when thickness change.
3. The as-sputtered thin film samples were under some heat treatments, structure, morphology and electrical properties were compared before and after heat treatment. Heat treatment had a result of crystallization of the TiB2 thin film, sheet resistance increased when temperature of heat treatment increased.
引文
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