硅基光接收集成宽带放大器设计
|
摘要
介绍了限制宽带放大器频带宽度的因素，通过分析MOSFET的本征参数、寄生参数对频率特性的影响，提出了采用短沟器件、使MOSFET工作在饱和区、抬高栅源电压等提高MOSFET特征频率的方法；分析了不同电路组态对放大器频率特性的影响、节点电压对电压模电路、电流模电路频率特性的不同影响，根据应用于双极晶体管电路的跨导线性原理，提出了采用MOSFET构成的电流模放大电路、电流传输电路、输出电路以及由它们所组成的宽带放大器，获得了良好的频率响应。该宽带放大器具有很好的应用前景和广阔的市场空间。
The factors limiting the frequency band of the wide-band amplifier are introduced. Through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of MOSFET by using short channel device and making MOSFET work at the saturation region through raising VGS is put forward; The effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. According to the linear theory of transconductance which is applied in the BIT circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of MOSFET and the wide-band amplifier composed of them are put forward. And good frequency response is obtained. Extended applications and huge market are promised.
The factors limiting the frequency band of the wide-band amplifier are introduced. Through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of MOSFET by using short channel device and making MOSFET work at the saturation region through raising VGS is put forward; The effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. According to the linear theory of transconductance which is applied in the BIT circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of MOSFET and the wide-band amplifier composed of them are put forward. And good frequency response is obtained. Extended applications and huge market are promised.
引文
[1] Behrouz Forouzan,Catherine Coombs《数据通信与网络》机械工艺出版社 2000．4
[2] 王启明 光网络与光电子集成的发展 电子产品世界 2001．4 7-10
[3] 李文海 《电信技术概述》人民邮电出版社 1993．10 1-2
[4] Takeshi yoshida, yusuke Ohtomo,Masakazu Shimaya et al. A Novel p-I-n Photodetector Farbricated on SIMOX for 1 GHz 2V COMS OEICs. IEEE Journal of Solid-State Circuit, 1998;33(1):53
[5] Guo Hui,Zheng yunguang,Guo Weilian.Near-Infrared Si_(0.7)Ge_(0.3)/Si p-I-n Photodetected on SOI in CMS Technology. CHINESE JOURNAL OF SEMICONDUCTORS VOL.21,NO,May 2000,pp-480-482
[6] 曹培栋 《微电子技术基础》 电子工业出版社 2001．4 265-271
[7] C.Toumzou F.j.Lidgey&D.G.Haigh《模拟集成电路设计—电流模法》电子工艺出版社 1996．4
[8] P.E.艾伦，D.R.霍尔伯格《CMOS集成电路设计》科学出版社 1995．3 97-98，
[9] 王镇道，陈迪平，朱小莉 双极型集成宽带放大器的设计 半导体技术 2001．12．3-7
[10] [美]艾伦B格里本，邵传芬等译．双极与MOS模拟集成电路设计．上海交通大学出版社．1989．94-95
[11] 魏同立 MOSFET中的热载流子效应 固体电子学研究与进展 2001．2 182-190
[12] 陈贵灿，邵志标，程军．CMOS集成电路设计西安交通大学出版社 2000．2
[13] N．艾罗拉著，张兴、李映雪译．用于VLSI模拟的小尺寸MOS器件模型．科学出版社．1999．
[14] Colinge J P. Silicon-On-Insulator Technology-Materials for VLSI[M].Kluwer Academic Pub, 1991:131-133.
[15] 伍志刚，凌荣堂．SOI技术—21世纪的硅集成技术．微电子学 2001，31(1)：1
[16] C.T. Sah,Characteristic of the Metal-Oxide-Semiconductor Transistor. IEEE Transaction on Electron Devices. ED-11,No.7(July 1964):324-345
[17] Eggert D,Huebler P. A SOI-RF-CMOS technology on high-resistivity SIMOX substrates for microwave applications up to 5 GHXZ[J].IEEE Trans
Elec Dev,1997;44:981-1989
[18] Caviglia A L,Potter R C,West L J . Microwave Performance of SOI n-MOSFET's and coplanar wave guides[J].IEEE Elec Dev Lett,1991;12(l):26-27
[19] Goss W H. New high speed amplifier designs,design techniques and layout problems.In : Huigsing J H ,Wander R J,Sansen W eds.Analog circuit design. Kluwer Academic Publisher, 1993:3-24
[20] Y．P．希维迪斯．MOS晶体管的工作原理及建模．第一版．西安交通大学出版 社，1989． 236
[21] Ohhata K,Masuda T,Imai K et al. A wide-dynamic-range,high-transimpedance Si bipolar preamplifier IC for 10-Gb/s optical fiber links TR T.EEEE Journal of Solid-State Circuit ,1999;34(1) :18
[22] Dabrowski W,Bonazzola G et al. Low-noise monolithic bipolar front-end for silicon drift detectors. Nuclear Instruments &Methods in Physics Research,Section A: Accelerators ,Spectrometers,Detectors and Associated Equipment, 1999;420(1-2)
[23] Toumazou C,Park S M. Wideband low noise CMOS transimpedance amplifier for gigahertz operation .Electronics Letters, 1996;32:1194
[24] Ingels M,Steyaert MSJ. A 1-Gb/s 0． 7um CMOS optical receiver with full rail-to-rail output swin.IEEE J-SSC,1999;34(7) :971
[25] Franco S. Current-feedback amplifiers benefit high-speed designs. EDN, 1989: 37(1) :161-172
[26] Smith D, Koen M, Witulsh A F. Evolution of high speed operational amplifier architectures. IEEE J Solid-State Circuit .1994;29(4) :1166-1179
[27] Gray P, Meyer R. Analysis and design of analog integrated circuit. Third ED. New York: John Wiley &Sons ,1993:283
[28] Toumazou C, Payne A, Lidgey T. Current-feedback versus voltage feedback amplifiers : history, insight and relationships . In :Proc Intern Symp Circ and Syst,1993:1046-1049
[29] Swager A W. Low-cost op amps break speed barriers. EDN ,1992;37(1) :53-64
[30] 龙弟光，刘先锋，冯兆兰 高速运算放大器新技术--电流反馈运算放大器
微电子学，1996，26(4) ：216
[31] 龙弟光，王界平，李秉忠 200V／us高速宽带运算放大器的设计考虑 微 电子学1997，27(1) ：43
[32] C. Toumazou , F.J.Lidgey, and D.G. Haigh ,Eds., Analogue IC Design :The Current-Mode Approach . Stevenage,U.K :Peregrinus ,1990
[33] K.Nagaraj. Constant-transconductance CMOS amplifier input stage with rail-to-rail input common mode voltage range . IEEE Trans. Circuits and Systems II,vol 42,pp.366-368,May 1995
[34] W. Redman-White . A high bandwidth constant gm and SR rail-to-rail CMOS input circuit and its application to analog cells for low voltage VLSI systems. IEEE J. Solid-state circuits,vol.32,pp.701-712,May 1997
[35] Yasuhiro Sugimoto.A 1． 5V Current-Mode CMOS Sample-and-Hold IC with 57-db s/N at 20 MS/s and 54-dB s/N at 30 MS/s. IEEE Journal of Solid-State Circuit,2001;36(4) :696
[36] Joumazou C,Lidgey F J , Haigh D G. Analogue IC design: the current mode approach. London: Peter Pereginus Ltd, 1990:535-595
[37] Franco S.Analytical foundation of current-feedback amplifier. In : Proc Intern Symp Circant Syst, 1993:1050-1053
[38] Bowers D F. The so-called current-feedback operational amplifier technological braeakthrough or engineering curiosity. In : Proc Inter Symp Cir and Syst, 1993: 1054-1057
[39] Smith S O. The good,the bad and the ugly :current-feedback technical contributions and limitations. In: Proc Inter Symp Circ and Syst ,1993:1058-1061
[40] Harvey B. Current feedback opamp limitations: a state-of-the-art review. In: Proc Intern Symp Circuit and Syst, 1993:1066-1069
[41] 黄均鼐、汤庭鳌著．双极型与MOS半导体器件原理．复旦大学出版社．1990
[42] Christian C.Enz,Yuhua Cheng.MOS Transistors Modeling for RF IC Design. IEEE Journal of Solid-State Circuit ,2000;35(2) :186
[43] P.R.Gray and R.G.Meyer,Analysis and Design of Analog Integrated Circuits. Second Ed. 1984:646
[2] 王启明 光网络与光电子集成的发展 电子产品世界 2001．4 7-10
[3] 李文海 《电信技术概述》人民邮电出版社 1993．10 1-2
[4] Takeshi yoshida, yusuke Ohtomo,Masakazu Shimaya et al. A Novel p-I-n Photodetector Farbricated on SIMOX for 1 GHz 2V COMS OEICs. IEEE Journal of Solid-State Circuit, 1998;33(1):53
[5] Guo Hui,Zheng yunguang,Guo Weilian.Near-Infrared Si_(0.7)Ge_(0.3)/Si p-I-n Photodetected on SOI in CMS Technology. CHINESE JOURNAL OF SEMICONDUCTORS VOL.21,NO,May 2000,pp-480-482
[6] 曹培栋 《微电子技术基础》 电子工业出版社 2001．4 265-271
[7] C.Toumzou F.j.Lidgey&D.G.Haigh《模拟集成电路设计—电流模法》电子工艺出版社 1996．4
[8] P.E.艾伦，D.R.霍尔伯格《CMOS集成电路设计》科学出版社 1995．3 97-98，
[9] 王镇道，陈迪平，朱小莉 双极型集成宽带放大器的设计 半导体技术 2001．12．3-7
[10] [美]艾伦B格里本，邵传芬等译．双极与MOS模拟集成电路设计．上海交通大学出版社．1989．94-95
[11] 魏同立 MOSFET中的热载流子效应 固体电子学研究与进展 2001．2 182-190
[12] 陈贵灿，邵志标，程军．CMOS集成电路设计西安交通大学出版社 2000．2
[13] N．艾罗拉著，张兴、李映雪译．用于VLSI模拟的小尺寸MOS器件模型．科学出版社．1999．
[14] Colinge J P. Silicon-On-Insulator Technology-Materials for VLSI[M].Kluwer Academic Pub, 1991:131-133.
[15] 伍志刚，凌荣堂．SOI技术—21世纪的硅集成技术．微电子学 2001，31(1)：1
[16] C.T. Sah,Characteristic of the Metal-Oxide-Semiconductor Transistor. IEEE Transaction on Electron Devices. ED-11,No.7(July 1964):324-345
[17] Eggert D,Huebler P. A SOI-RF-CMOS technology on high-resistivity SIMOX substrates for microwave applications up to 5 GHXZ[J].IEEE Trans
Elec Dev,1997;44:981-1989
[18] Caviglia A L,Potter R C,West L J . Microwave Performance of SOI n-MOSFET's and coplanar wave guides[J].IEEE Elec Dev Lett,1991;12(l):26-27
[19] Goss W H. New high speed amplifier designs,design techniques and layout problems.In : Huigsing J H ,Wander R J,Sansen W eds.Analog circuit design. Kluwer Academic Publisher, 1993:3-24
[20] Y．P．希维迪斯．MOS晶体管的工作原理及建模．第一版．西安交通大学出版 社，1989． 236
[21] Ohhata K,Masuda T,Imai K et al. A wide-dynamic-range,high-transimpedance Si bipolar preamplifier IC for 10-Gb/s optical fiber links TR T.EEEE Journal of Solid-State Circuit ,1999;34(1) :18
[22] Dabrowski W,Bonazzola G et al. Low-noise monolithic bipolar front-end for silicon drift detectors. Nuclear Instruments &Methods in Physics Research,Section A: Accelerators ,Spectrometers,Detectors and Associated Equipment, 1999;420(1-2)
[23] Toumazou C,Park S M. Wideband low noise CMOS transimpedance amplifier for gigahertz operation .Electronics Letters, 1996;32:1194
[24] Ingels M,Steyaert MSJ. A 1-Gb/s 0． 7um CMOS optical receiver with full rail-to-rail output swin.IEEE J-SSC,1999;34(7) :971
[25] Franco S. Current-feedback amplifiers benefit high-speed designs. EDN, 1989: 37(1) :161-172
[26] Smith D, Koen M, Witulsh A F. Evolution of high speed operational amplifier architectures. IEEE J Solid-State Circuit .1994;29(4) :1166-1179
[27] Gray P, Meyer R. Analysis and design of analog integrated circuit. Third ED. New York: John Wiley &Sons ,1993:283
[28] Toumazou C, Payne A, Lidgey T. Current-feedback versus voltage feedback amplifiers : history, insight and relationships . In :Proc Intern Symp Circ and Syst,1993:1046-1049
[29] Swager A W. Low-cost op amps break speed barriers. EDN ,1992;37(1) :53-64
[30] 龙弟光，刘先锋，冯兆兰 高速运算放大器新技术--电流反馈运算放大器
微电子学，1996，26(4) ：216
[31] 龙弟光，王界平，李秉忠 200V／us高速宽带运算放大器的设计考虑 微 电子学1997，27(1) ：43
[32] C. Toumazou , F.J.Lidgey, and D.G. Haigh ,Eds., Analogue IC Design :The Current-Mode Approach . Stevenage,U.K :Peregrinus ,1990
[33] K.Nagaraj. Constant-transconductance CMOS amplifier input stage with rail-to-rail input common mode voltage range . IEEE Trans. Circuits and Systems II,vol 42,pp.366-368,May 1995
[34] W. Redman-White . A high bandwidth constant gm and SR rail-to-rail CMOS input circuit and its application to analog cells for low voltage VLSI systems. IEEE J. Solid-state circuits,vol.32,pp.701-712,May 1997
[35] Yasuhiro Sugimoto.A 1． 5V Current-Mode CMOS Sample-and-Hold IC with 57-db s/N at 20 MS/s and 54-dB s/N at 30 MS/s. IEEE Journal of Solid-State Circuit,2001;36(4) :696
[36] Joumazou C,Lidgey F J , Haigh D G. Analogue IC design: the current mode approach. London: Peter Pereginus Ltd, 1990:535-595
[37] Franco S.Analytical foundation of current-feedback amplifier. In : Proc Intern Symp Circant Syst, 1993:1050-1053
[38] Bowers D F. The so-called current-feedback operational amplifier technological braeakthrough or engineering curiosity. In : Proc Inter Symp Cir and Syst, 1993: 1054-1057
[39] Smith S O. The good,the bad and the ugly :current-feedback technical contributions and limitations. In: Proc Inter Symp Circ and Syst ,1993:1058-1061
[40] Harvey B. Current feedback opamp limitations: a state-of-the-art review. In: Proc Intern Symp Circuit and Syst, 1993:1066-1069
[41] 黄均鼐、汤庭鳌著．双极型与MOS半导体器件原理．复旦大学出版社．1990
[42] Christian C.Enz,Yuhua Cheng.MOS Transistors Modeling for RF IC Design. IEEE Journal of Solid-State Circuit ,2000;35(2) :186
[43] P.R.Gray and R.G.Meyer,Analysis and Design of Analog Integrated Circuits. Second Ed. 1984:646