快速热扩散炉及快速扩散的研究
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摘要
本论文对快速热扩散炉(RTD Furnace)的设计、制造进行了详细描述，研制出了RTD炉样机。通过调试此设备获得了它的升降温曲线和温控PID参数。实验研究了快速热扩散(RTD)：通过旋涂磷胶和印刷磷浆两种方式考查了2×4和103×103单晶硅的快速热扩散特性，发现：1)此样机的温度场在空间分布上是均匀的；2)快速热扩散可以比传统扩散快3倍的速度进行扩散；3)在扩散温度和掺杂磷源相同的条件下，与传统扩散相比，快速热扩散将杂质向结更深的地方推进。这些技术和实验结果在国内未见报道。
本论文采用HF和HNO_3为腐蚀液，在不同温度、添加剂和超声振荡3种情况下来进行研究多晶硅酸腐蚀表面织构化。实验研究发现：通过超声振荡，在单位面积上腐蚀坑密度较大。在1min、HF：HNO_3=12：1的腐蚀条件下，25℃时加Br_2用超声振荡的方式得到的腐蚀效果好。腐蚀坑比较均匀、光滑，单位面积腐蚀坑较多，而且呈收缩型，这将有利于入射光的多次反射，获得较好的表面减反射效果。本研究在国内外未见报道过。
This dissertation discussed the design and manufacture of Rapid Thermal Diffusion (RTD) furnace. RTD in c-Si of 2X4 and 103 X 103 size were studied by experiments in the same RTD furnace. The diffusion carrier concentration profile and junction depth were measured and compared with Conventional Furnace Processing diffusion (CFD). It presented following conclusions: 1) The temperature distribution in quartz chamber of RTD furnace is uniform because square resistance is uniform after RTD; 2) The diffusion velocity of RTD furnace by a factor of three compare to Conventional Furnace Processing diffusion (RTD); 3) If diffusion temperature and doping phosphorus are equivalent, doping phosphorus of RTD are more than of CFD in equivalent distance to the silicon surface. This technology and results have not been reported in China.
It first researched multicrystalline silicon surface texture by ultrasonic vibration. Selecting the optimal proportion between HF and HNO3, we find the better etching basing on 1min, ultrasonic vibration, 25 , appending Br2 and pits are more uniform on the multicrystalline silicon surface, while better textured surface can be obtained.
本论文采用HF和HNO_3为腐蚀液，在不同温度、添加剂和超声振荡3种情况下来进行研究多晶硅酸腐蚀表面织构化。实验研究发现：通过超声振荡，在单位面积上腐蚀坑密度较大。在1min、HF：HNO_3=12：1的腐蚀条件下，25℃时加Br_2用超声振荡的方式得到的腐蚀效果好。腐蚀坑比较均匀、光滑，单位面积腐蚀坑较多，而且呈收缩型，这将有利于入射光的多次反射，获得较好的表面减反射效果。本研究在国内外未见报道过。
This dissertation discussed the design and manufacture of Rapid Thermal Diffusion (RTD) furnace. RTD in c-Si of 2X4 and 103 X 103 size were studied by experiments in the same RTD furnace. The diffusion carrier concentration profile and junction depth were measured and compared with Conventional Furnace Processing diffusion (CFD). It presented following conclusions: 1) The temperature distribution in quartz chamber of RTD furnace is uniform because square resistance is uniform after RTD; 2) The diffusion velocity of RTD furnace by a factor of three compare to Conventional Furnace Processing diffusion (RTD); 3) If diffusion temperature and doping phosphorus are equivalent, doping phosphorus of RTD are more than of CFD in equivalent distance to the silicon surface. This technology and results have not been reported in China.
It first researched multicrystalline silicon surface texture by ultrasonic vibration. Selecting the optimal proportion between HF and HNO3, we find the better etching basing on 1min, ultrasonic vibration, 25 , appending Br2 and pits are more uniform on the multicrystalline silicon surface, while better textured surface can be obtained.
引文
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