氧化锌薄膜的制备及压敏性质研究
摘要
氧化锌具有六角纤锌矿的晶体结构,是一种直接带隙的宽禁带半导体材料,室温下的带隙宽度为3.3eV,激子束缚能高达60meV。ZnO薄膜具有良好的透明导电性、压电性、光电性、气敏性、压敏性等性质,且易于与多种半导体材料实现集成化。因此,在平面显示器、太阳能电池透明电极、压敏元件、气敏元件等光电子器件领域有着广阔的应用前景。由于这些优异的性质,使其具有广泛的用途和许多潜在用途。近年来受到越来越多研究者的注意,成为半导体领域里的一个研究热点。
本论文利用溶胶—凝胶法制备透明氧化锌薄膜。通过二水醋酸锌醇解获得不同浓度的溶胶,经过不同速度提拉镀膜,在不同热处理条件下制备不同厚度的薄膜,利用扫描电子显微镜和X射线衍射测试,结果表明薄膜表面平整、具有明显择优取向生长,并讨论不同浓度、提拉速度、预处理温度、热处理温度等对薄膜厚度的影响。
通过在溶胶中加入铝盐对其进行掺杂,制备掺杂的薄膜,并对铝掺杂氧化锌薄膜进行电学特性方面的研究。研究发现掺杂铝的氧化锌薄膜,电阻率明显降低,纯氧化锌薄膜几乎不导电,掺铝后使薄膜中载流子浓度提高,薄膜的导电性能大幅度提高。本文讨论不同的掺铝量、薄膜厚度以及退火温度对电阻率的影响,并对薄膜进行扫描电子显微镜和X射线衍射测试,结果表明ZAO薄膜保持着ZnO六角纤锌矿结构,表明Al原子对Zn原子的有效替位。扫描电子显微镜观察到样品表面相对平整、致密,但仍可以看出其表面有不规则的呈较黑的凹陷部分和凸起部分呈白色的衬度,这是因为Al~(3+)与Zn~(2+)的离子半径不同,Al~(3+)代替Zn~(2+)产生的微细孔而形成的多孔结构。
利用磁控溅射法在基片上制备底电极,然后用溶胶凝胶法在电极上制备掺铝的氧化锌薄膜,并对其进行压敏测试,研究发现:压敏电压为7.3V,非线性系数为7.9,漏电流为21.3μA。
Zinc oxide have six angular wurtzite's crystal structure which is a sort of a direct band-gap semiconductor material.The band gap width of Zinc oxide is 3.3eV in room temperature,and it's excition binding energy is as high as 60 meV.ZnO film have nice transparent electric conductivity,piezoelectricity,photoelectricity,gas-sensitive,varistor,and it is easy to realize integration with multi-semiconductor material.Therefore,there is wide application prospects to ZnO film in the region of optoelectronic device of panel display, the transparency electrode of solar battery,voltage-sensitive element,gas-sensor and so on..Owing to these outstanding property,ZnO film have comprehensive usage and many potential usage.In recent years,more and more researchers have pay attention to it,and it became a research hotspot in semiconductor region..
This paper talks about the preparation of transparent zinc oxide film by sol-gel method.Gain different consistence collosol from two water zinc acetate alcoholysis,and make thin film at the different pulling speed,under different heat treat condition,then gain the preparation of dissimilar thickness film.It proves the film is surfaceing and obviously preferred orientation growth by SEM and X-ray diffraction test.And This paper discuss the influence of film thickness in different consistence,pull rate,pretreatment temper -ature,heat treatment temperature and so on..
Adding aluminium salt to collosol to get the preparation of adulterant film,and do researching in respect of electricity characteristic towards it.By research,adulterated aluminous zinc oxide film's specific resistance obviously decrease,pure zinc oxide film hardly conduct electricity,but after adulterated aluminous,the carrier concentration of film is increased,filmy conduct electricity performance is largely increased too.This paper discuss that the influence of specific resistance by different volume of adulterating aluminum,film thickness as well as annealing temperature,and do Scanning Electron Microscope and X-ray diffraction testing towards the film.The result indicated the ZAO thin film is maintaining the ZnO hexagon spiauterite structure,indicates the Al atom to the Zn atom effective displacement,Carries on the observation surface using the scanning electron microscope to the sample to be relatively smooth,compactly,But still might see its surface to have not not regularly assumes the black hollow part,assumed the white with the bulge part the lining,Because Al~(3+) and the Zn~(2+) ionic radius is different,the vesicular structure which Al~(3+) replaces which Zn~(2+) to have the micro pore forms.
Preparation bottom electrode in substrate by maguetron sputtering method, then,Preparation adulterate aluminum zinc oxide film in pole by sol-gel process method, and do voltage-sensitive testing towards it.by research,the varistor voltage is 7.3 V, non-linear factor is 7.9 and drain current is 21.3μA.
本论文利用溶胶—凝胶法制备透明氧化锌薄膜。通过二水醋酸锌醇解获得不同浓度的溶胶,经过不同速度提拉镀膜,在不同热处理条件下制备不同厚度的薄膜,利用扫描电子显微镜和X射线衍射测试,结果表明薄膜表面平整、具有明显择优取向生长,并讨论不同浓度、提拉速度、预处理温度、热处理温度等对薄膜厚度的影响。
通过在溶胶中加入铝盐对其进行掺杂,制备掺杂的薄膜,并对铝掺杂氧化锌薄膜进行电学特性方面的研究。研究发现掺杂铝的氧化锌薄膜,电阻率明显降低,纯氧化锌薄膜几乎不导电,掺铝后使薄膜中载流子浓度提高,薄膜的导电性能大幅度提高。本文讨论不同的掺铝量、薄膜厚度以及退火温度对电阻率的影响,并对薄膜进行扫描电子显微镜和X射线衍射测试,结果表明ZAO薄膜保持着ZnO六角纤锌矿结构,表明Al原子对Zn原子的有效替位。扫描电子显微镜观察到样品表面相对平整、致密,但仍可以看出其表面有不规则的呈较黑的凹陷部分和凸起部分呈白色的衬度,这是因为Al~(3+)与Zn~(2+)的离子半径不同,Al~(3+)代替Zn~(2+)产生的微细孔而形成的多孔结构。
利用磁控溅射法在基片上制备底电极,然后用溶胶凝胶法在电极上制备掺铝的氧化锌薄膜,并对其进行压敏测试,研究发现:压敏电压为7.3V,非线性系数为7.9,漏电流为21.3μA。
Zinc oxide have six angular wurtzite's crystal structure which is a sort of a direct band-gap semiconductor material.The band gap width of Zinc oxide is 3.3eV in room temperature,and it's excition binding energy is as high as 60 meV.ZnO film have nice transparent electric conductivity,piezoelectricity,photoelectricity,gas-sensitive,varistor,and it is easy to realize integration with multi-semiconductor material.Therefore,there is wide application prospects to ZnO film in the region of optoelectronic device of panel display, the transparency electrode of solar battery,voltage-sensitive element,gas-sensor and so on..Owing to these outstanding property,ZnO film have comprehensive usage and many potential usage.In recent years,more and more researchers have pay attention to it,and it became a research hotspot in semiconductor region..
This paper talks about the preparation of transparent zinc oxide film by sol-gel method.Gain different consistence collosol from two water zinc acetate alcoholysis,and make thin film at the different pulling speed,under different heat treat condition,then gain the preparation of dissimilar thickness film.It proves the film is surfaceing and obviously preferred orientation growth by SEM and X-ray diffraction test.And This paper discuss the influence of film thickness in different consistence,pull rate,pretreatment temper -ature,heat treatment temperature and so on..
Adding aluminium salt to collosol to get the preparation of adulterant film,and do researching in respect of electricity characteristic towards it.By research,adulterated aluminous zinc oxide film's specific resistance obviously decrease,pure zinc oxide film hardly conduct electricity,but after adulterated aluminous,the carrier concentration of film is increased,filmy conduct electricity performance is largely increased too.This paper discuss that the influence of specific resistance by different volume of adulterating aluminum,film thickness as well as annealing temperature,and do Scanning Electron Microscope and X-ray diffraction testing towards the film.The result indicated the ZAO thin film is maintaining the ZnO hexagon spiauterite structure,indicates the Al atom to the Zn atom effective displacement,Carries on the observation surface using the scanning electron microscope to the sample to be relatively smooth,compactly,But still might see its surface to have not not regularly assumes the black hollow part,assumed the white with the bulge part the lining,Because Al~(3+) and the Zn~(2+) ionic radius is different,the vesicular structure which Al~(3+) replaces which Zn~(2+) to have the micro pore forms.
Preparation bottom electrode in substrate by maguetron sputtering method, then,Preparation adulterate aluminum zinc oxide film in pole by sol-gel process method, and do voltage-sensitive testing towards it.by research,the varistor voltage is 7.3 V, non-linear factor is 7.9 and drain current is 21.3μA.
引文
[1]白春礼.纳米科技及其发展前景.中国工程咨询,2000(4):38-41.
[2]张立德,牟季美.纳米材料和纳米结构.北京:科学出版社,2001:1-22.
[3]张志昆,崔作林.纳米技术与纳米材料.北京:国防工业出版社,2000:45-46.
[4]Mai L Q,Chen W,Xu Q,et al.Cost-saving synthesis of vanadium oxide nanotubes.Solid State Commun,2003,126(10):541-543.
[5]Spahr M E,Stoschitzki B P,Nesper R et al.Vanadium oxide nanotubes:A new nanostructured redox-active material for the electrochemical insertion of lithium.J niectrochem Soc,1999,146(8):2780-2783.
[6]Azambre B,Hudson M J,Heintz O.Topotactic redox reactions of copper(Ⅱ) and iron(Ⅲ) salts within VO_2 nanotubes.J.Mater.Chem,2003,13(2):385-393.
[7]Chen X,Sun X M,Li Y D.Self-assembling vanadium oxide nanotubes by organic molecular templates.Inorg.Chem.,2002,41(17):4524-4530.
[8]Muhr H J,Krumeich F,Schonholzer U P et al.Vanadium oxide nanotubes A new flexible vanadate nanophase.Adv.Mater,2000,12(3):231-238.
[9]杨剑,滕风恩.纳米材料综述.材料导报,1997,11(2):6-10.
[10]Me Y,Qian Y T,Wang W Z et al.A benzene-thermal synthetic route to nanocrystalline GaN.Science,1996,272(5270):1926-1927.
[11]丁星兆,柳襄怀.纳米材料的结构、性能及应用.材料导报,1997,11(4):1-5.
[12]Wang Z L.Characterization of nanophase materials.Weinheim Wiley-VCH press,2000:54-59.
[13]王君,陈红亮.21世纪的前沿材料—纳米材料.当代化工,2001,30(1):121-130.
[14]潘上红.纳米粒子的特性、研究方法及研究现状.金属热处理,2002(2):2-4.
[15]彭英才,何宇亮.纳米硅薄膜研究的最新进展,稀有金属,1999,23(1):42.
[16]Eniko Tothkadar,Imre Bakonyi,Lajas Pogany,Agnes Cziraki.Microstructure and electrical transport properties of pulse plated nanocrystalline nickel electrodeposits,Surface & Coating Technology,1996:57.
[17]Kochler J.S.Attempt to design a strong solid,Phy.Rev.B,1970,2:547.
[18]曲喜新,杨邦朝,姜节伶等.电子薄膜材料,北京,科学出版,1996:1-257.
[19]殷顺湖.透明导电膜研究进展.材料导报,1997年6月第3期:33-37.
[20]曲喜新.现代电阻薄膜.电子元件与材料,1995年8月:1-7.
[21]刘冰,袁华堂,张允什.半导体/金属薄膜的研究进展,第31卷第11期,1998年11月:7-8.
[22]Hart R,Midgley P,A,Wikinson..A Single-crystal magnetic metal films on GaAs grown by electrodeposition.Appl Phys Lett,1995,67(9):1316-1318.
[23]王娟,张长瑞,冯坚.低介电常数介质薄膜的研究进展.化学进展,2005年11月,第17卷第6期:1001-1010.
[24]Zeng H,Li J,Wang Z L,et al.Interparticle interactions in annealed FePt nanoparticle assemblies.IEEE Transactions on magnetcs,2002,38(5):2598-2600.
[25]杜朝锋,黄英,秦秀兰.纳米磁性薄膜的研究进展.兵器材料科学与工程,2007年3月,第30卷第2期:75-80.
[26]何政、陈文,孙华君等.块体压电材料制备工艺的研究进展.现代技术陶瓷,2002年3月:19-23.
[27]Schweyer M.G,Hilton J.A,Munson International Symposium on Frequency J.E,etc.Control A novel monolithic piezoelectric sensor.IEEE Orlando,1997:249-252.
[28]袁小武,朱建国,肖定全.PLCT系列热释电薄膜的最新研究进展.压电与声光,2002年8月第24卷第4期:295-298.
[29]WANGCM,HUANGYT,CHENYC,etc.Characterization of calcium-modified lead titanate thin films derived from a diol-based Sol-Gel process.JpnJApplPhys,1998,39(6A):3579-3583.
[30]Bednorz JG,Muller KA.1986.Z.Phys.B64:189-193.
[31]陈默轩,何元金.高温超导薄膜及器件应用,工科物理,2000年10月第三期:27-31.
[32]聂登攀,薛涛,曾舒等.纳米氧化锌的结构分析.贵州工业大学学报,2006年4月,第35卷第2期:27-28.
[33]D.C.Reynolds,D.C.Look,B.Jogai,C.W.Litton,T.C.Collins,W.Harsch and G Cantwell.Neutral donor-boundexciton Complexes in ZnO Crystals.Phys,1998,(57):12-51.
[34]D.C.Look,R.L.Jones,J.R.Sizelove,N.Y.Garces,N.C.Giles and L.E.Halliburton.The Path to ZnO Devices Donor and Acceptor Dynamics Phys.Status Solidia.2003,(195):17.
[35]S.S.Chang,S.O.Yoon,H.J.Park and A.Sakai.Luminescence Properties of ZnNanovwires Prepared by Electrochemical Etching.Mater Lett.2002,(53):432
[36]K.Thonke,T.Gruber,N.Teofilov,R.Schonfelder,A.Waag and R.Sauer.Donor-acceptor Pair Transitions in ZnO Substrate Material.Physica.2001,(308):945.
[37]侯昭升,张其震,周其凤等.纳米级金属分子树在催化中的应用.现代化工,2003,23(2):58-61.
[38]A.Fujishima,K.Honda,Electrochemical Photolysis of water at a semiconductor electrode,Nature,1972,238(5358):37-38.
[39]Frank,S.N;Bard,A.J.,Heterogeneous Photocatalytic oxidation of cyanide and Sulfite in aqueous solutions at semiconductor Powders,J.Phys.Chem.1977,81:1484-1488.
[40]祖庸,王训,吴金龙等.新型无机抗菌剂—超微细氧化锌.化工时刊,1999年,113(1):7-9.
[41]张梅,杨绪杰,陆路德等.纳米TiO_2一种性能优良的光催化剂.化工新型材料,2000,28(4):11-14.
[42]Baik D Gcho S M.Application of sol-gel derived films for ZnO/n-Si junction solar cells Thin Solid Films,1999,354:227.
[43]Nakanishi Y,Miyake A,Kominami H,et al.Preparation of ZnO thin films for high-resolution field emission display by electron beam evaporation Applied Surface Science,1999,142:233.
[44]Lin Feng-Gang,Takao Y,et al.J.Am.Ceram.Soc,1995,78(9):2301.
[45]Suzuoki Y,Ohki A,Mizutani T,et al.Electrical properties of ZnO-Bi_2O_3 thin-film varistors.J.Phys.D:Appl.Phys,1987,20:511.
[46]Horio N,Hiramatsu M,Nawata M,et al.Preparation of zinc oxide/metal oxide multilayered thin films for low-voltage varistors Vacuum,1998,51(4):719.
[47]贾锐,曲凡钦,武光明等.ZnO系低压压敏薄膜的喷雾热分解法制备及膜厚度对其压敏特性的影响的研究.功能材料,1999,30(6):638.
[48]Fabricius,H.;Skettrup,T.;Bisgaard,P..Ultraviolet detectors in thin sputtered ZnO films.Appl.Optics,1986;25:2764.
[49]Lin,Y.;Goda,C.R.;Liang,S.;et al.Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD.J.of Elec.Materials,2000,29(1):60.
[50]X.L.Xu,S.P.Lau,J.S.Chen,Z.Sun,B.K.Tay,J.W.Chai Dependence of electrical and optical properties of ZnO films on substrate temperature.Materials Science in Semiconductor Processing 2001;4:617-620.
[51]Lixin Yi,Yanbing Hou,Hui Zhao,Dawei He,Zheng Xu,Yongsheng Wang,Xurong Xu,The photo-and electro-luminescence properties of ZnO:Zn thin film.Displays 2000;21:147-149.
[52]吕建国,汪雷,叶志镇等.ZnO薄膜应用的最新研究进展.功能材料与器件学报,2002,8(3):303-308.
[53]Chang CC,Chen YE..IEEE Transactions on Ultrasonic Ferroelectrics and Frequency Control.1997,44(3):624.
[54]Assouar MB,Benedic F,Elmazria O,etal..MPACVD Diamond Films for Surface Acoustic Wave Filters.Diamond and Related Materials 2001,10(3-7):681-685.
[55]J.J.Chen,Y.Gao,F.Zeng,D.M.Li,F.Pan.Effect of sputtering oxygen partial pressures on structure and physical properties of high resistivity ZnO films.Applied Surface Science,2004;V223:318-329.
[56]Kourosh Kalantar-Zadeh,Yuen Yuen Chen,Benjamin N.Fryetc.Epitaxial ZnO piezoelectric thin films for SAW filters.IEEE Ultrasonics Symposium,2001:353-356.
[57]Jae Bin Lee,Hyeong Joon Kim,Soo Gil Kim,etc.Deposition of ZnO thin films by magnetron sputtering for a film bulk acoustic resonator.Thin Solid Films,2003;V435:179-185.
[58]张平则,张高会,崔彩娥.薄膜生长过程的分子尺度模拟.电子工艺技术,2004年7月第25卷第4期:171-173.
[59]田民波.溅射镀膜的特点和应用.稀有金属,1987年1月:35-40.
[60]G.K.Wehner,in Methods of Surface Analysis,edited by A.W.Czanderma,Chap.l(1975),Elsevier New York.
[61]田民波.日新月异的真空表面处理技术(二),溅射镀膜.真空应用,1985年第三期:7-8.
[62]S.Hayyamizu,H.Tabata,H.Tanaka,et al.Preparation of crystallized zinc oxide films on amorpho -us glass substrates by pulsed laser deposition.J Appl Phys,1996,80:787.
[63]H.Kim,C.M.Gilmore,J.S.Horwitz,et al.Transparent conducting aluminum-doped zincoxide thin films for organic light-emitting devices.Appl Phys Lett,2000,76(3):259.
[64]Tan,Z.K.;Wong,G.K.L.;Yu,P.;Kawasaki,M;Ohtomo,A;Koinuma,H.;Segawa,Y.Room temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films.Appl Phys Lett,1998,72(25):3270-3272.
[65]Zu,P;Tang,Z.K;Wang,G.K.L;Kawasaki,M..Y.Ultra vio let spontaneous and stimulated emis -sons form ZnO microcrystallite thin films at room temperature.Solid State Communications,1997;103(8):459-463.
[66]张迎光,白雪峰,张洪林等.化学气相沉积技术的进展.科技论坛,中国科技信2005年第12期:82.
[67]F.Paraguay D.,M.M.Yoshida,J.Morales,et al.Influence of A1,In,Cu,Fe and Sn dopants on the response of thin film ZnO gas sensor to ethanol vapor.Thin Solid Films,2000,373:137.
[68]Liang,S;Gorla,C.R.;Emanetoglu,N.;et al.Epitaxial growth of(1120) ZnO on(0112) A1203 by metalorganic chemical vapor deposition.J.Elec.Materials,1998,27(11):72-76.
[69]Liu,Y.;Gorla,C.R;;Liang,S.;et al.Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD.J.of Elec.Materials,2000;29(1):60.
[70]Hahn,B.;Heubdel,G.;Pschorr-Schoberer,E.;et al.MOCVD layer growth of ZnO using DMZn and tertiary butanol.Semicon.Sci.Technol.1998;13:788.
[71]Naoko Asakuma,Hiroshi Hirashima,et al.Crystallization and Reduction of Sol-Gel-Derived Zinc Oxide Films by Irradiation with Ultraviolet Lamp.Sol-Gel Science and Technology,2003,26:181-184.
[72]Masashi Ohyama,Hiromitsu Kozuka,Toshinobu Yoko.Sol-gel preparation of ZnO films with extremely preferred orientation along(002) plane from zinc acetate solution[J].Thin Solid Films,1997,306:78-85.
[73]Cho Sunglae;Ma Jing,Yunki Kim,et al.Photoluminescence and ultravio let lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn.Appl.Phys.Lett.1999,75(18):2761-2763.
[74]圣桂金,张杨,王维等.TiO_2纳米薄膜的制备及热辐射特性研究.红外,2007年9月,1-3.
[75]陈宗淇,王光信,徐桂英等.《胶体与界面化学》.北京,高等教育出版社,2001,104-105.
[76]刘晓花,田臻锋.退火处理对氧化锌薄膜的特性影响,成宁学院学报,2005年12月,第25卷第6期:31-33.
[77]蔡小玲,谢鸿波,手持式导电薄膜方块电阻测试仪的设计原理和方法,南方钢铁,2000年10月,总第116期,28-30.
[78]周洁.半导体的检测与分析.北京,科学出版社,1984,373-381.
[79]曲喜新.现代电阻薄膜.电子元件与材料,1995年8月,1-8.
[80]徐启华.电阻的测量与非测量.陕西科学出版社,1981年,208-216.
[81]Nune P,Malik A.Influence of the Doping and Annealing Atmosphere on Zinc Oxide Thin Films Deposited by Pyrolysis.Vacuum.1999,45-49.
[82]李世平,李玲.溶胶-凝胶法制备ZnO:Al薄膜的光电特性.半导体技术,2006年10期技术专栏,733-736.
[83]葛春桥,薛亦渝,胡小锋等.溶胶-凝胶方法制备AZO薄膜及其光电性能研究.真空电子技术,2005年1月,20-21.
[84]葛启函,邓宏,陈航等.不同掺Al~(3+)浓度的ZnO:Al薄膜性能研究.电子科技大学学报.2006年4月,第35卷第2期:253-255.
[85]刘财坤,邓宏,李金丽等.sol-gel法制备ZnO薄膜压敏电阻.电子元件与材料,2007年6月,第26卷第6期:40-42.
[86]黄焱球,刘梅冬,李楚容等.ZnO陶瓷薄膜的制备及其低压压敏性质.压电与声电,2001年10月,第23卷第5期:384-386.
[87]HENN IN GS D,HARTUN G R,REUN EN P L.Grain size control in low voltage varistors.J Am CeramSoc,1990,73(3):645-648.
[88]周东祥,章天金,龚树萍.低压氧化锌压敏陶瓷的显微结构及其电学性能的研究.功能材料,2000,31(1),66-68.
[2]张立德,牟季美.纳米材料和纳米结构.北京:科学出版社,2001:1-22.
[3]张志昆,崔作林.纳米技术与纳米材料.北京:国防工业出版社,2000:45-46.
[4]Mai L Q,Chen W,Xu Q,et al.Cost-saving synthesis of vanadium oxide nanotubes.Solid State Commun,2003,126(10):541-543.
[5]Spahr M E,Stoschitzki B P,Nesper R et al.Vanadium oxide nanotubes:A new nanostructured redox-active material for the electrochemical insertion of lithium.J niectrochem Soc,1999,146(8):2780-2783.
[6]Azambre B,Hudson M J,Heintz O.Topotactic redox reactions of copper(Ⅱ) and iron(Ⅲ) salts within VO_2 nanotubes.J.Mater.Chem,2003,13(2):385-393.
[7]Chen X,Sun X M,Li Y D.Self-assembling vanadium oxide nanotubes by organic molecular templates.Inorg.Chem.,2002,41(17):4524-4530.
[8]Muhr H J,Krumeich F,Schonholzer U P et al.Vanadium oxide nanotubes A new flexible vanadate nanophase.Adv.Mater,2000,12(3):231-238.
[9]杨剑,滕风恩.纳米材料综述.材料导报,1997,11(2):6-10.
[10]Me Y,Qian Y T,Wang W Z et al.A benzene-thermal synthetic route to nanocrystalline GaN.Science,1996,272(5270):1926-1927.
[11]丁星兆,柳襄怀.纳米材料的结构、性能及应用.材料导报,1997,11(4):1-5.
[12]Wang Z L.Characterization of nanophase materials.Weinheim Wiley-VCH press,2000:54-59.
[13]王君,陈红亮.21世纪的前沿材料—纳米材料.当代化工,2001,30(1):121-130.
[14]潘上红.纳米粒子的特性、研究方法及研究现状.金属热处理,2002(2):2-4.
[15]彭英才,何宇亮.纳米硅薄膜研究的最新进展,稀有金属,1999,23(1):42.
[16]Eniko Tothkadar,Imre Bakonyi,Lajas Pogany,Agnes Cziraki.Microstructure and electrical transport properties of pulse plated nanocrystalline nickel electrodeposits,Surface & Coating Technology,1996:57.
[17]Kochler J.S.Attempt to design a strong solid,Phy.Rev.B,1970,2:547.
[18]曲喜新,杨邦朝,姜节伶等.电子薄膜材料,北京,科学出版,1996:1-257.
[19]殷顺湖.透明导电膜研究进展.材料导报,1997年6月第3期:33-37.
[20]曲喜新.现代电阻薄膜.电子元件与材料,1995年8月:1-7.
[21]刘冰,袁华堂,张允什.半导体/金属薄膜的研究进展,第31卷第11期,1998年11月:7-8.
[22]Hart R,Midgley P,A,Wikinson..A Single-crystal magnetic metal films on GaAs grown by electrodeposition.Appl Phys Lett,1995,67(9):1316-1318.
[23]王娟,张长瑞,冯坚.低介电常数介质薄膜的研究进展.化学进展,2005年11月,第17卷第6期:1001-1010.
[24]Zeng H,Li J,Wang Z L,et al.Interparticle interactions in annealed FePt nanoparticle assemblies.IEEE Transactions on magnetcs,2002,38(5):2598-2600.
[25]杜朝锋,黄英,秦秀兰.纳米磁性薄膜的研究进展.兵器材料科学与工程,2007年3月,第30卷第2期:75-80.
[26]何政、陈文,孙华君等.块体压电材料制备工艺的研究进展.现代技术陶瓷,2002年3月:19-23.
[27]Schweyer M.G,Hilton J.A,Munson International Symposium on Frequency J.E,etc.Control A novel monolithic piezoelectric sensor.IEEE Orlando,1997:249-252.
[28]袁小武,朱建国,肖定全.PLCT系列热释电薄膜的最新研究进展.压电与声光,2002年8月第24卷第4期:295-298.
[29]WANGCM,HUANGYT,CHENYC,etc.Characterization of calcium-modified lead titanate thin films derived from a diol-based Sol-Gel process.JpnJApplPhys,1998,39(6A):3579-3583.
[30]Bednorz JG,Muller KA.1986.Z.Phys.B64:189-193.
[31]陈默轩,何元金.高温超导薄膜及器件应用,工科物理,2000年10月第三期:27-31.
[32]聂登攀,薛涛,曾舒等.纳米氧化锌的结构分析.贵州工业大学学报,2006年4月,第35卷第2期:27-28.
[33]D.C.Reynolds,D.C.Look,B.Jogai,C.W.Litton,T.C.Collins,W.Harsch and G Cantwell.Neutral donor-boundexciton Complexes in ZnO Crystals.Phys,1998,(57):12-51.
[34]D.C.Look,R.L.Jones,J.R.Sizelove,N.Y.Garces,N.C.Giles and L.E.Halliburton.The Path to ZnO Devices Donor and Acceptor Dynamics Phys.Status Solidia.2003,(195):17.
[35]S.S.Chang,S.O.Yoon,H.J.Park and A.Sakai.Luminescence Properties of ZnNanovwires Prepared by Electrochemical Etching.Mater Lett.2002,(53):432
[36]K.Thonke,T.Gruber,N.Teofilov,R.Schonfelder,A.Waag and R.Sauer.Donor-acceptor Pair Transitions in ZnO Substrate Material.Physica.2001,(308):945.
[37]侯昭升,张其震,周其凤等.纳米级金属分子树在催化中的应用.现代化工,2003,23(2):58-61.
[38]A.Fujishima,K.Honda,Electrochemical Photolysis of water at a semiconductor electrode,Nature,1972,238(5358):37-38.
[39]Frank,S.N;Bard,A.J.,Heterogeneous Photocatalytic oxidation of cyanide and Sulfite in aqueous solutions at semiconductor Powders,J.Phys.Chem.1977,81:1484-1488.
[40]祖庸,王训,吴金龙等.新型无机抗菌剂—超微细氧化锌.化工时刊,1999年,113(1):7-9.
[41]张梅,杨绪杰,陆路德等.纳米TiO_2一种性能优良的光催化剂.化工新型材料,2000,28(4):11-14.
[42]Baik D Gcho S M.Application of sol-gel derived films for ZnO/n-Si junction solar cells Thin Solid Films,1999,354:227.
[43]Nakanishi Y,Miyake A,Kominami H,et al.Preparation of ZnO thin films for high-resolution field emission display by electron beam evaporation Applied Surface Science,1999,142:233.
[44]Lin Feng-Gang,Takao Y,et al.J.Am.Ceram.Soc,1995,78(9):2301.
[45]Suzuoki Y,Ohki A,Mizutani T,et al.Electrical properties of ZnO-Bi_2O_3 thin-film varistors.J.Phys.D:Appl.Phys,1987,20:511.
[46]Horio N,Hiramatsu M,Nawata M,et al.Preparation of zinc oxide/metal oxide multilayered thin films for low-voltage varistors Vacuum,1998,51(4):719.
[47]贾锐,曲凡钦,武光明等.ZnO系低压压敏薄膜的喷雾热分解法制备及膜厚度对其压敏特性的影响的研究.功能材料,1999,30(6):638.
[48]Fabricius,H.;Skettrup,T.;Bisgaard,P..Ultraviolet detectors in thin sputtered ZnO films.Appl.Optics,1986;25:2764.
[49]Lin,Y.;Goda,C.R.;Liang,S.;et al.Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD.J.of Elec.Materials,2000,29(1):60.
[50]X.L.Xu,S.P.Lau,J.S.Chen,Z.Sun,B.K.Tay,J.W.Chai Dependence of electrical and optical properties of ZnO films on substrate temperature.Materials Science in Semiconductor Processing 2001;4:617-620.
[51]Lixin Yi,Yanbing Hou,Hui Zhao,Dawei He,Zheng Xu,Yongsheng Wang,Xurong Xu,The photo-and electro-luminescence properties of ZnO:Zn thin film.Displays 2000;21:147-149.
[52]吕建国,汪雷,叶志镇等.ZnO薄膜应用的最新研究进展.功能材料与器件学报,2002,8(3):303-308.
[53]Chang CC,Chen YE..IEEE Transactions on Ultrasonic Ferroelectrics and Frequency Control.1997,44(3):624.
[54]Assouar MB,Benedic F,Elmazria O,etal..MPACVD Diamond Films for Surface Acoustic Wave Filters.Diamond and Related Materials 2001,10(3-7):681-685.
[55]J.J.Chen,Y.Gao,F.Zeng,D.M.Li,F.Pan.Effect of sputtering oxygen partial pressures on structure and physical properties of high resistivity ZnO films.Applied Surface Science,2004;V223:318-329.
[56]Kourosh Kalantar-Zadeh,Yuen Yuen Chen,Benjamin N.Fryetc.Epitaxial ZnO piezoelectric thin films for SAW filters.IEEE Ultrasonics Symposium,2001:353-356.
[57]Jae Bin Lee,Hyeong Joon Kim,Soo Gil Kim,etc.Deposition of ZnO thin films by magnetron sputtering for a film bulk acoustic resonator.Thin Solid Films,2003;V435:179-185.
[58]张平则,张高会,崔彩娥.薄膜生长过程的分子尺度模拟.电子工艺技术,2004年7月第25卷第4期:171-173.
[59]田民波.溅射镀膜的特点和应用.稀有金属,1987年1月:35-40.
[60]G.K.Wehner,in Methods of Surface Analysis,edited by A.W.Czanderma,Chap.l(1975),Elsevier New York.
[61]田民波.日新月异的真空表面处理技术(二),溅射镀膜.真空应用,1985年第三期:7-8.
[62]S.Hayyamizu,H.Tabata,H.Tanaka,et al.Preparation of crystallized zinc oxide films on amorpho -us glass substrates by pulsed laser deposition.J Appl Phys,1996,80:787.
[63]H.Kim,C.M.Gilmore,J.S.Horwitz,et al.Transparent conducting aluminum-doped zincoxide thin films for organic light-emitting devices.Appl Phys Lett,2000,76(3):259.
[64]Tan,Z.K.;Wong,G.K.L.;Yu,P.;Kawasaki,M;Ohtomo,A;Koinuma,H.;Segawa,Y.Room temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films.Appl Phys Lett,1998,72(25):3270-3272.
[65]Zu,P;Tang,Z.K;Wang,G.K.L;Kawasaki,M..Y.Ultra vio let spontaneous and stimulated emis -sons form ZnO microcrystallite thin films at room temperature.Solid State Communications,1997;103(8):459-463.
[66]张迎光,白雪峰,张洪林等.化学气相沉积技术的进展.科技论坛,中国科技信2005年第12期:82.
[67]F.Paraguay D.,M.M.Yoshida,J.Morales,et al.Influence of A1,In,Cu,Fe and Sn dopants on the response of thin film ZnO gas sensor to ethanol vapor.Thin Solid Films,2000,373:137.
[68]Liang,S;Gorla,C.R.;Emanetoglu,N.;et al.Epitaxial growth of(1120) ZnO on(0112) A1203 by metalorganic chemical vapor deposition.J.Elec.Materials,1998,27(11):72-76.
[69]Liu,Y.;Gorla,C.R;;Liang,S.;et al.Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD.J.of Elec.Materials,2000;29(1):60.
[70]Hahn,B.;Heubdel,G.;Pschorr-Schoberer,E.;et al.MOCVD layer growth of ZnO using DMZn and tertiary butanol.Semicon.Sci.Technol.1998;13:788.
[71]Naoko Asakuma,Hiroshi Hirashima,et al.Crystallization and Reduction of Sol-Gel-Derived Zinc Oxide Films by Irradiation with Ultraviolet Lamp.Sol-Gel Science and Technology,2003,26:181-184.
[72]Masashi Ohyama,Hiromitsu Kozuka,Toshinobu Yoko.Sol-gel preparation of ZnO films with extremely preferred orientation along(002) plane from zinc acetate solution[J].Thin Solid Films,1997,306:78-85.
[73]Cho Sunglae;Ma Jing,Yunki Kim,et al.Photoluminescence and ultravio let lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn.Appl.Phys.Lett.1999,75(18):2761-2763.
[74]圣桂金,张杨,王维等.TiO_2纳米薄膜的制备及热辐射特性研究.红外,2007年9月,1-3.
[75]陈宗淇,王光信,徐桂英等.《胶体与界面化学》.北京,高等教育出版社,2001,104-105.
[76]刘晓花,田臻锋.退火处理对氧化锌薄膜的特性影响,成宁学院学报,2005年12月,第25卷第6期:31-33.
[77]蔡小玲,谢鸿波,手持式导电薄膜方块电阻测试仪的设计原理和方法,南方钢铁,2000年10月,总第116期,28-30.
[78]周洁.半导体的检测与分析.北京,科学出版社,1984,373-381.
[79]曲喜新.现代电阻薄膜.电子元件与材料,1995年8月,1-8.
[80]徐启华.电阻的测量与非测量.陕西科学出版社,1981年,208-216.
[81]Nune P,Malik A.Influence of the Doping and Annealing Atmosphere on Zinc Oxide Thin Films Deposited by Pyrolysis.Vacuum.1999,45-49.
[82]李世平,李玲.溶胶-凝胶法制备ZnO:Al薄膜的光电特性.半导体技术,2006年10期技术专栏,733-736.
[83]葛春桥,薛亦渝,胡小锋等.溶胶-凝胶方法制备AZO薄膜及其光电性能研究.真空电子技术,2005年1月,20-21.
[84]葛启函,邓宏,陈航等.不同掺Al~(3+)浓度的ZnO:Al薄膜性能研究.电子科技大学学报.2006年4月,第35卷第2期:253-255.
[85]刘财坤,邓宏,李金丽等.sol-gel法制备ZnO薄膜压敏电阻.电子元件与材料,2007年6月,第26卷第6期:40-42.
[86]黄焱球,刘梅冬,李楚容等.ZnO陶瓷薄膜的制备及其低压压敏性质.压电与声电,2001年10月,第23卷第5期:384-386.
[87]HENN IN GS D,HARTUN G R,REUN EN P L.Grain size control in low voltage varistors.J Am CeramSoc,1990,73(3):645-648.
[88]周东祥,章天金,龚树萍.低压氧化锌压敏陶瓷的显微结构及其电学性能的研究.功能材料,2000,31(1),66-68.