半导体智能点火与内弹道性能控制研究
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摘要
本论文以降低或者消除环境温度对火炮内弹道性能的影响为目的,从点传火对内弹道性能影响的角度出发,提出利用智能点火系统调整不同环境下的点火强度从而对内弹道性能调整的方案。具体内容如下：
(1)针对提出的降低环境温度对火炮内弹道性能影响的方案,从理论上验证所提出方案的可行性,建立了中心点火方式下的双一维两相流内弹道数学模型并进行数值仿真。分析了发射过程中点火管内与膛内各状态参量的分布规律以及膛底和弹底的压力、弹丸速度、压力波等主要内弹道参量的变化规律,并与实验数据进行对比验证模型的正确性。与此同时,利用此模型计算了点火系统中不同因素对内弹道性能的影响,从原理上分析通过智能点火系统改变点传火条件可以降低温度系数的可行性。
(2)以对火工品工作性能和工作机理的分析为基础,对火工品的选择进行了研究。根据半导体桥火工品的工作特点,分析了半导体桥火工品的传热机制和传热过程,建立了半导体桥强瞬态点火的数学模型,对其作用机理进行了分析；结合半导体桥的桥体材料特性,建立了半导体桥生成等离子体过程中的升温模型,全面分析了整个升温过程中各种因素对生成等离子体快慢的影响,并与实验数据进行验证比较；基于半导体材料的物理化学性质和热力学状态随桥体温度的变化,建立了电能对半导体桥作用过程的分段模型,给出了半导体桥在电能作用下电阻及电导率的变化规律,分析了桥体动态电阻的变化过程和现象；从传热学角度出发,以半导体桥的典型基本结构为基础,建立半导体桥在作用过程中对电路特性影响的数学模型,论证了不同尺寸和构造的半导体桥的电特性规律。
(3)建立了半导体桥作用过程的物理数学模型并进行数值仿真。以半导体物理基本方程和热传导方程为基础建立半导体桥熔化前的模型,详细分析了载流子浓度与温度之间的关系及载流子迁移率的确定,并对其进行了数值模拟,论证了外加电压对桥体温度分布的影响及桥体内电子密度的分布等；根据半导体桥生成等离子体过程中放电的特点,半导体桥生成等离子体的放电过程可确定为弧光放电,并根据低能电弧放电原理建立半导体桥放电模型,分析了其放电特性。
(4)以对所提方案的理论分析和火工品的选择为基础,设计并制作了以飞思卡尔公司的DZ32单片机芯片为核心的智能点火系统。此点火系统包括硬件部分和软件部分,硬件部分分为信号调理部分,键盘和显示部分,与上位机通讯部分,受控点火部分以及控制部分。控制部分完成响应键盘指令,进行相应的显示,控制点火脉冲实现可靠点火和接受测温回馈信号,并对采集的数据进行A/D转换、处理和存储。软件部分设计了单片机内部以及与上位机通讯部分,实现了数据的采集、存储和传送功能。
The purpose of this research is to eliminate the effect of temperature on interior ballistic performance. From the point of ignition, the intelligent control ignition system is used to change the ignition intensity under different temperatures to realize the changing interior ballistic performance. The main parts of this research are concluded as follows:
(1) Double one-dimensional two-phase flow interior ballistics mathematical model under center ignition is established and its numerical simulations are conducted. The change laws of interior ballistic parameters are analyzed. Base on the modeling results, the effect of different factors of the interior ballistic performance are discussed, such as particle size, ambient temperature and ignition factors.
(2) To decrease the effect of temperature on interior ballistic performance, the choice of initiating devices is studied. The mechanism and process of heat transfer of Semiconductor Bridge initiating devices is studied. The model of Semiconductor Bridge device strongly transient initiating process is established, and the function mechanism of Semiconductor Bridge is analyzed. The temperatures rising model which describe the process of Semiconductor Bridge generating plasma is established, and pay more emphasis on analyzing the influence of several factors on the generating plasma, then the simulation data is compared with experimental data. The multi-section model of describing process of circuit applied on Semiconductor Bridge is established, dynamic resistance of Semiconductor Bridge and phenomenon are studied. And it is established that the effect of Semiconductor Bridge on circuit, analyze the influence of different size and structure on electrical performance.
(3) Based on the basic equations of semiconductor physics and heat transfer, the model of Semiconductor Bridge before melting is established. The relationship among the carrier concentration and temperature, the mobility of carrier, the effect of external voltage on Semiconductor Bridge temperature distribution and electron density distribution is discussed. It is proposed that the process of Semiconductor Bridge generating plasma is disc discharge with the establishment of its math model. And the discharge characteristic is analyzed.
(4) The controlled parameters and suited structure and packing structure are discussed. The intelligent ignition system based on DZ32chip is designed and made. The intelligent ignition system includes both hardware and software. And the hardware of system consists of the signal modulator circuits, keyboard and LCD display circuits, RS-485serial communication and control circuits. The software includes the communication between DZ32chip and upper pc, and the main function of software includes data acquisition, data store and data communication.
(1)针对提出的降低环境温度对火炮内弹道性能影响的方案,从理论上验证所提出方案的可行性,建立了中心点火方式下的双一维两相流内弹道数学模型并进行数值仿真。分析了发射过程中点火管内与膛内各状态参量的分布规律以及膛底和弹底的压力、弹丸速度、压力波等主要内弹道参量的变化规律,并与实验数据进行对比验证模型的正确性。与此同时,利用此模型计算了点火系统中不同因素对内弹道性能的影响,从原理上分析通过智能点火系统改变点传火条件可以降低温度系数的可行性。
(2)以对火工品工作性能和工作机理的分析为基础,对火工品的选择进行了研究。根据半导体桥火工品的工作特点,分析了半导体桥火工品的传热机制和传热过程,建立了半导体桥强瞬态点火的数学模型,对其作用机理进行了分析；结合半导体桥的桥体材料特性,建立了半导体桥生成等离子体过程中的升温模型,全面分析了整个升温过程中各种因素对生成等离子体快慢的影响,并与实验数据进行验证比较；基于半导体材料的物理化学性质和热力学状态随桥体温度的变化,建立了电能对半导体桥作用过程的分段模型,给出了半导体桥在电能作用下电阻及电导率的变化规律,分析了桥体动态电阻的变化过程和现象；从传热学角度出发,以半导体桥的典型基本结构为基础,建立半导体桥在作用过程中对电路特性影响的数学模型,论证了不同尺寸和构造的半导体桥的电特性规律。
(3)建立了半导体桥作用过程的物理数学模型并进行数值仿真。以半导体物理基本方程和热传导方程为基础建立半导体桥熔化前的模型,详细分析了载流子浓度与温度之间的关系及载流子迁移率的确定,并对其进行了数值模拟,论证了外加电压对桥体温度分布的影响及桥体内电子密度的分布等；根据半导体桥生成等离子体过程中放电的特点,半导体桥生成等离子体的放电过程可确定为弧光放电,并根据低能电弧放电原理建立半导体桥放电模型,分析了其放电特性。
(4)以对所提方案的理论分析和火工品的选择为基础,设计并制作了以飞思卡尔公司的DZ32单片机芯片为核心的智能点火系统。此点火系统包括硬件部分和软件部分,硬件部分分为信号调理部分,键盘和显示部分,与上位机通讯部分,受控点火部分以及控制部分。控制部分完成响应键盘指令,进行相应的显示,控制点火脉冲实现可靠点火和接受测温回馈信号,并对采集的数据进行A/D转换、处理和存储。软件部分设计了单片机内部以及与上位机通讯部分,实现了数据的采集、存储和传送功能。
The purpose of this research is to eliminate the effect of temperature on interior ballistic performance. From the point of ignition, the intelligent control ignition system is used to change the ignition intensity under different temperatures to realize the changing interior ballistic performance. The main parts of this research are concluded as follows:
(1) Double one-dimensional two-phase flow interior ballistics mathematical model under center ignition is established and its numerical simulations are conducted. The change laws of interior ballistic parameters are analyzed. Base on the modeling results, the effect of different factors of the interior ballistic performance are discussed, such as particle size, ambient temperature and ignition factors.
(2) To decrease the effect of temperature on interior ballistic performance, the choice of initiating devices is studied. The mechanism and process of heat transfer of Semiconductor Bridge initiating devices is studied. The model of Semiconductor Bridge device strongly transient initiating process is established, and the function mechanism of Semiconductor Bridge is analyzed. The temperatures rising model which describe the process of Semiconductor Bridge generating plasma is established, and pay more emphasis on analyzing the influence of several factors on the generating plasma, then the simulation data is compared with experimental data. The multi-section model of describing process of circuit applied on Semiconductor Bridge is established, dynamic resistance of Semiconductor Bridge and phenomenon are studied. And it is established that the effect of Semiconductor Bridge on circuit, analyze the influence of different size and structure on electrical performance.
(3) Based on the basic equations of semiconductor physics and heat transfer, the model of Semiconductor Bridge before melting is established. The relationship among the carrier concentration and temperature, the mobility of carrier, the effect of external voltage on Semiconductor Bridge temperature distribution and electron density distribution is discussed. It is proposed that the process of Semiconductor Bridge generating plasma is disc discharge with the establishment of its math model. And the discharge characteristic is analyzed.
(4) The controlled parameters and suited structure and packing structure are discussed. The intelligent ignition system based on DZ32chip is designed and made. The intelligent ignition system includes both hardware and software. And the hardware of system consists of the signal modulator circuits, keyboard and LCD display circuits, RS-485serial communication and control circuits. The software includes the communication between DZ32chip and upper pc, and the main function of software includes data acquisition, data store and data communication.
引文
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