大尺寸硅片磨削平整化理论与工艺技术的研究
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摘要
随着集成电路(IC)制造技术的飞速发展，为了提高IC集成度，IC的特征线宽不断减小；另一方面，为了增大IC芯片产量，降低单元制造成本，硅片趋向大直径化。随着硅片直径增大，为了保证硅片具有足够的强度，硅片的厚度也相应增加；与此相反，为满足先进IC芯片封装技术需要，芯片的厚度越来越薄。这些变化使硅片平整化加工面临许多突出的技术问题：IC特征线宽减小，对硅片加工精度和表面质量提出很高的要求；硅片直径增大后，加工中容易翘曲变形，加工面型精度不易保证；硅片厚度增大以及芯片厚度减小，使硅片背面减薄加工的材料去除量增大，提高加工效率成为一个亟待解决的问题。因此，采用固结磨料砂轮的超精密磨削技术正在取代传统的研磨技术成为硅片超精密平整化加工技术的主流发展方向，其中最有代表性的硅片自旋转磨削方法被认为是大尺寸硅片磨削平整化加工的理想方法。尽管，硅片自旋转磨削技术已在大直径硅片的制备、有电路硅片的背面减薄以及废旧硅片的回收加工中得到应用，但是，如何进一步提高硅片加工表面层质量、面型精度和加工效率仍然是目前急需解决的主要问题。所以，必须针对这些问题深入系统地研究硅片自旋转磨削平整化理论和关键工艺技术。
本文建立了硅片自旋转磨削的运动学理论模型，并通过分析砂轮与硅片之间的相对运动，给出了硅片自旋转磨削的运动轨迹参数方程；通过引入节点和节圆等概念，并在运动几何学的基础上推导了磨纹长度、数量以及磨削稳定周期公式；分析了磨纹间距、密度与磨削表面质量的关系；在Windows2000／XP平台上，开发了硅片自旋转磨削的磨削纹理仿真软件，对几种典型速比下的硅片磨削纹理及其对表面质量的影响进行了预测和理论分析，并通过硅片磨削实验，对仿真和理论分析结果进行了试验验证；通过理论和试验研究，从运动学角度，提出提高磨削表面质量的工艺措施。
综合考虑硅片自旋转磨削时硅片夹持系统中真空吸盘修整参数以及硅片磨削参数等多种因素，建立了硅片面型的理论模型；在此模型的基础上，推导了硅片磨削面型的方程以及表征硅片面型精度的重要指标—硅片总厚度变化(Total Thickness Variation，TTV)的计算公式；应用VC++6.0编程技术和OpenGL三维图形库开发了磨削面型仿真软件，对真空吸盘修整面型以及硅片磨削面型进行了计算机仿真和预测，分析了真空吸盘修整面型、砂轮转速、工作台转速、砂轮轴向进给速率、磨床砂轮主轴摆动角和偏摆角等因素对硅片磨削面型的影响规律，并以VG401型超精密磨床为试验平台对硅片磨削面型的仿真预测结果和理论分析结果进行了磨削试验验证。
提出了利用软磨料砂轮低损伤磨削加工硅片的新方法；研制出了通过释放填充料提供良好加工环境的高自锐性的#3000二氧化铈软磨料砂轮，并设计了用于硅片自旋转磨削的可拆卸互换式砂轮结构；研究了软磨料砂轮的低成本制备方法和修整方法，开发了砂轮的修整工具。进行软磨料砂轮的干式和湿式磨削试验，应用XPS检测磨削后硅片表面的成份，分析砂轮磨料和填充料与硅片之间的化学反应，揭示了软磨料砂轮磨削硅片时利用化学机械复合作用的材料去除机理。进行了软磨料砂轮磨削性能试验，利用AFM、SEM、TEM等仪器检测表面粗糙度、表面形貌、表面缺陷和表面层损伤，试验表明，软磨料砂轮磨削不仅能够保证硅片加工精度，加工成本低，而且磨削后的硅片表面经检测未发现划痕，硅片亚表面未发现微裂纹和位错。
以兼顾加工效率和表面质量为目标，提出了采用#325和#2000金刚石砂轮以及#3000软磨料砂轮，利用硅片自旋转磨床，分别进行粗磨、精磨和低损伤磨削的硅片超精密平整化加工工艺方案。针对粗磨、精磨和低损伤磨削加工，选择砂轮转速、硅片转速、砂轮进给速度、冷却液流量4个主要因素进行了正交试验，分别针对不同的单项磨削工艺指标优化了磨削工艺参数。通过灰关联分析，将多项工艺指标的优化问题转化为优化单项灰关联度，实现了多项工艺指标的优化，确定了硅片超精密磨削平整化的最佳优化工艺参数。
With fast developing of the integrated circuit (IC) manufacturing technology, the devicefeature size continues reducing in order to increase the density of integration. On the otherhand, the diameter of the silicon wafer tends to be larger and larger in order to increase theyields of chips and decrease the cost per bit. While the diameter of the wafer increase, thethickness of wafer is also increased to ensure the strength of the wafer. Contrarily, the chipthickness is decreased to be thinner and thinner to meet the requirements of the advanced ICpackage technology. With the increase of the diameter and thickness of the wafer and thedecrease of the chip thickness, the current flattening process of the wafer is facing many newtechnology problems. The high machining accuracy is difficult to achieve because the largesized wafer is easy to warp, and the high machining efficiency is required because sizechanges of the wafer and the chip result in the increase of the material removal amount.Therefore, the ultra-precision grinding with fixed abrasive wheel, which is taking the place oflapping with loose abrasive, becomes the main trend of development for ultra-precisionflattening process for the large-sized silicon wafer. Although wafer rotation grinding methodis especially considered as the most promising processing technology and has been used inmanufacturing of the blank wafer, back thinning of the pattern wafer and reclaiming the rejectwafer, how to further improve surface layer quality and flatness of the ground wafer andenhance machining efficiency are still main problems to be solved. Thus, it is very necessaryto deeply and systematically research the flattening theory and key process technology basedon wafer rotation grinding.
In this paper, according to relative motion between the cup grinding wheel and the siliconwafer, a kinematic model of the wafer rotation grinding is established, the kinematic equationof the grit trajectory is derived based on the concept of pitch point and pitch circle etc. Theformula of the length and number of the grit trajectories and the stable grinding period arededuced. The influence of the interval and the density of the grinding marks, formed on thewafer surface by the many grits, on surface quality of the ground wafer are analyzed.Simulation software of the grinding marks on the wafer surface is developed on operatingsystem Windows 2000/XP, and the grinding marks on the wafer ground with differentvelocity ratio of the grinding wheel to wafer are predicted and analyzed by computersimulation. The results of simulation and theoretical analyses are verified by experiments, which are conducted on a grinding machine VG401. Through theoretical and experimentalstudies, the available technique ways to improve the surface quality of the ground wafer areprovided from kinematic point of view.
A theoretical model for the ground wafer surface profile is developed, in which manycritical factors, including dressing parameters of the porous ceramic vacuum chuck systemand grinding parameters of the wafer, etc., are considered. From the model, the equation ofthe ground wafer surface and the formula of the total thickness variation(TTV) that is animportant data of the wafer surface flatness, are derived. By using a computer simulationsoftware on the ground wafer surface developed with Visual C++(VC++) and Open GraphicLibrary (OpenGL), the 3D surface profile of the dressed vacuum chuck and the ground waferare predicted, and the effects of the dressed vacuum chuck surface and the wafer grindingparameters, including the rotational speed of the grinding wheel, the down feed rate of thegrinding wheel, the rotational speed of the wafer, the roll angle and pitch angle of the grindingwheel spindle, on the 3D surface profile of the ground wafer are theoretically analyzed. Theresults of theoretical analysis and computer simulation are verified through a series ofgrinding experiments on a grinding machine VG401.
An innovative low damage grinding method for silicon wafers using a soft abrasivegrinding wheel (SAGW) is put forword. The SAGW with #3000 CeO_2 abrasive, which hascapability of good self-dressing and releasing active additives to provide particular machiningcondition, is developed. A detachable and interchangeable structure of the SAGW is designed.The low cost manufacturing and dressing method of the SAGW are studied, and the dressingtools for the SAGW are developed. The grinding experiments using the SAGW on thecondition of dry and wet grinding are conducted and chemical reaction between the abrasiveand additives of grinding wheel and the wafer is testified by XPS inspection of productcomponent on the ground wafer surface. The mechanism of material removal on the wafersurface can be explained as chemical and mechanical recombination action. The grindingperformances of the developed SAGW are studied in terms of surface roughness, surfacetopography and surface defect and surface/subsurface damage of the ground wafers by use ofAFM, SEM and TEM. The experiment results show that the grinding method for siliconwafers using the SAGW has not only high machining accuracy and low machining cost, butalso hardly results in such damage as scratch, crack and dislocation in the surface andsubsurface of the ground wafer.
Aiming at the surface quality and material removal rate, an innovative ultra-precisionflattening process for large-sized silicon wafer, which is a procedure processing system,integrating the rough grinding with #325 diamond grinding wheel, fine grinding with #2000diamond grinding wheel, and the low damage grinding with #3000 CeO_2 SAGW on a precision grinding machine based on wafer rotating grinding method, is put forward. TheTaguchi experiment programme of four factors, including the rotational speed of the grindingwheel, the rotational speed of the wafer, the down feed rate of the grinding wheel, and theflux of cooling fluid, is designed. The optimum process parameters of the wafer rotationgrinding are obtained according to the different single machining performance characteristics.The optimum of multi performance characteristics is realized by converting the optimumproblem of multi performance characteristics to a sequencing problem of grey relational gradethrough grey system theory. And optimum process parameters for the rough grinding, finegrinding and low damage grinding are separately given.
本文建立了硅片自旋转磨削的运动学理论模型，并通过分析砂轮与硅片之间的相对运动，给出了硅片自旋转磨削的运动轨迹参数方程；通过引入节点和节圆等概念，并在运动几何学的基础上推导了磨纹长度、数量以及磨削稳定周期公式；分析了磨纹间距、密度与磨削表面质量的关系；在Windows2000／XP平台上，开发了硅片自旋转磨削的磨削纹理仿真软件，对几种典型速比下的硅片磨削纹理及其对表面质量的影响进行了预测和理论分析，并通过硅片磨削实验，对仿真和理论分析结果进行了试验验证；通过理论和试验研究，从运动学角度，提出提高磨削表面质量的工艺措施。
综合考虑硅片自旋转磨削时硅片夹持系统中真空吸盘修整参数以及硅片磨削参数等多种因素，建立了硅片面型的理论模型；在此模型的基础上，推导了硅片磨削面型的方程以及表征硅片面型精度的重要指标—硅片总厚度变化(Total Thickness Variation，TTV)的计算公式；应用VC++6.0编程技术和OpenGL三维图形库开发了磨削面型仿真软件，对真空吸盘修整面型以及硅片磨削面型进行了计算机仿真和预测，分析了真空吸盘修整面型、砂轮转速、工作台转速、砂轮轴向进给速率、磨床砂轮主轴摆动角和偏摆角等因素对硅片磨削面型的影响规律，并以VG401型超精密磨床为试验平台对硅片磨削面型的仿真预测结果和理论分析结果进行了磨削试验验证。
提出了利用软磨料砂轮低损伤磨削加工硅片的新方法；研制出了通过释放填充料提供良好加工环境的高自锐性的#3000二氧化铈软磨料砂轮，并设计了用于硅片自旋转磨削的可拆卸互换式砂轮结构；研究了软磨料砂轮的低成本制备方法和修整方法，开发了砂轮的修整工具。进行软磨料砂轮的干式和湿式磨削试验，应用XPS检测磨削后硅片表面的成份，分析砂轮磨料和填充料与硅片之间的化学反应，揭示了软磨料砂轮磨削硅片时利用化学机械复合作用的材料去除机理。进行了软磨料砂轮磨削性能试验，利用AFM、SEM、TEM等仪器检测表面粗糙度、表面形貌、表面缺陷和表面层损伤，试验表明，软磨料砂轮磨削不仅能够保证硅片加工精度，加工成本低，而且磨削后的硅片表面经检测未发现划痕，硅片亚表面未发现微裂纹和位错。
以兼顾加工效率和表面质量为目标，提出了采用#325和#2000金刚石砂轮以及#3000软磨料砂轮，利用硅片自旋转磨床，分别进行粗磨、精磨和低损伤磨削的硅片超精密平整化加工工艺方案。针对粗磨、精磨和低损伤磨削加工，选择砂轮转速、硅片转速、砂轮进给速度、冷却液流量4个主要因素进行了正交试验，分别针对不同的单项磨削工艺指标优化了磨削工艺参数。通过灰关联分析，将多项工艺指标的优化问题转化为优化单项灰关联度，实现了多项工艺指标的优化，确定了硅片超精密磨削平整化的最佳优化工艺参数。
With fast developing of the integrated circuit (IC) manufacturing technology, the devicefeature size continues reducing in order to increase the density of integration. On the otherhand, the diameter of the silicon wafer tends to be larger and larger in order to increase theyields of chips and decrease the cost per bit. While the diameter of the wafer increase, thethickness of wafer is also increased to ensure the strength of the wafer. Contrarily, the chipthickness is decreased to be thinner and thinner to meet the requirements of the advanced ICpackage technology. With the increase of the diameter and thickness of the wafer and thedecrease of the chip thickness, the current flattening process of the wafer is facing many newtechnology problems. The high machining accuracy is difficult to achieve because the largesized wafer is easy to warp, and the high machining efficiency is required because sizechanges of the wafer and the chip result in the increase of the material removal amount.Therefore, the ultra-precision grinding with fixed abrasive wheel, which is taking the place oflapping with loose abrasive, becomes the main trend of development for ultra-precisionflattening process for the large-sized silicon wafer. Although wafer rotation grinding methodis especially considered as the most promising processing technology and has been used inmanufacturing of the blank wafer, back thinning of the pattern wafer and reclaiming the rejectwafer, how to further improve surface layer quality and flatness of the ground wafer andenhance machining efficiency are still main problems to be solved. Thus, it is very necessaryto deeply and systematically research the flattening theory and key process technology basedon wafer rotation grinding.
In this paper, according to relative motion between the cup grinding wheel and the siliconwafer, a kinematic model of the wafer rotation grinding is established, the kinematic equationof the grit trajectory is derived based on the concept of pitch point and pitch circle etc. Theformula of the length and number of the grit trajectories and the stable grinding period arededuced. The influence of the interval and the density of the grinding marks, formed on thewafer surface by the many grits, on surface quality of the ground wafer are analyzed.Simulation software of the grinding marks on the wafer surface is developed on operatingsystem Windows 2000/XP, and the grinding marks on the wafer ground with differentvelocity ratio of the grinding wheel to wafer are predicted and analyzed by computersimulation. The results of simulation and theoretical analyses are verified by experiments, which are conducted on a grinding machine VG401. Through theoretical and experimentalstudies, the available technique ways to improve the surface quality of the ground wafer areprovided from kinematic point of view.
A theoretical model for the ground wafer surface profile is developed, in which manycritical factors, including dressing parameters of the porous ceramic vacuum chuck systemand grinding parameters of the wafer, etc., are considered. From the model, the equation ofthe ground wafer surface and the formula of the total thickness variation(TTV) that is animportant data of the wafer surface flatness, are derived. By using a computer simulationsoftware on the ground wafer surface developed with Visual C++(VC++) and Open GraphicLibrary (OpenGL), the 3D surface profile of the dressed vacuum chuck and the ground waferare predicted, and the effects of the dressed vacuum chuck surface and the wafer grindingparameters, including the rotational speed of the grinding wheel, the down feed rate of thegrinding wheel, the rotational speed of the wafer, the roll angle and pitch angle of the grindingwheel spindle, on the 3D surface profile of the ground wafer are theoretically analyzed. Theresults of theoretical analysis and computer simulation are verified through a series ofgrinding experiments on a grinding machine VG401.
An innovative low damage grinding method for silicon wafers using a soft abrasivegrinding wheel (SAGW) is put forword. The SAGW with #3000 CeO_2 abrasive, which hascapability of good self-dressing and releasing active additives to provide particular machiningcondition, is developed. A detachable and interchangeable structure of the SAGW is designed.The low cost manufacturing and dressing method of the SAGW are studied, and the dressingtools for the SAGW are developed. The grinding experiments using the SAGW on thecondition of dry and wet grinding are conducted and chemical reaction between the abrasiveand additives of grinding wheel and the wafer is testified by XPS inspection of productcomponent on the ground wafer surface. The mechanism of material removal on the wafersurface can be explained as chemical and mechanical recombination action. The grindingperformances of the developed SAGW are studied in terms of surface roughness, surfacetopography and surface defect and surface/subsurface damage of the ground wafers by use ofAFM, SEM and TEM. The experiment results show that the grinding method for siliconwafers using the SAGW has not only high machining accuracy and low machining cost, butalso hardly results in such damage as scratch, crack and dislocation in the surface andsubsurface of the ground wafer.
Aiming at the surface quality and material removal rate, an innovative ultra-precisionflattening process for large-sized silicon wafer, which is a procedure processing system,integrating the rough grinding with #325 diamond grinding wheel, fine grinding with #2000diamond grinding wheel, and the low damage grinding with #3000 CeO_2 SAGW on a precision grinding machine based on wafer rotating grinding method, is put forward. TheTaguchi experiment programme of four factors, including the rotational speed of the grindingwheel, the rotational speed of the wafer, the down feed rate of the grinding wheel, and theflux of cooling fluid, is designed. The optimum process parameters of the wafer rotationgrinding are obtained according to the different single machining performance characteristics.The optimum of multi performance characteristics is realized by converting the optimumproblem of multi performance characteristics to a sequencing problem of grey relational gradethrough grey system theory. And optimum process parameters for the rough grinding, finegrinding and low damage grinding are separately given.
引文
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