激光熔蒸制备纳米结构和扫描探针显微术研究
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摘要
纳米结构的制备和性质表征一直是纳米科学技术领域的核心工作,而各种扫描探针显微术的发展为纳米科技提供了有力的工具,推动了纳米科技的飞速进展。激光熔蒸技术作为一种有许多优点的的纳米结构制备技术,在科研和工业生产中日益受到更加广泛的关注。
     在我们的研究中,我们利用扫描探针显微术(主要是扫描隧道显微术和原子力显微术)来研究激光熔蒸法制备的纳米结构的表面形貌、电输运等性质。下面我们分五章来叙述我们的工作。
     第一章 我们回顾了纳米结构的制备技术和扫描探针显微术的发展,并简单介绍了TiO_2、TiSi_2研究的进展情况,引出我们的研究目的。
     第二章 简单介绍了超高真空系统和变温扫描隧道显微镜(VT STM)系统的建设,以及对变温STM系统作的一些主要的改进工作,为我们的研究工作做好仪器方面的准备。
     第三章 在Si(111)表面上沉积很薄的一层TiO_2薄膜,以之为前驱,在850℃退火制备了C54结构的TiSi_2纳米岛,利用STM原位研究了其表面形貌和电输运性质,利用XRD和XPS分别研究了纳米岛的结构和成分。讨论了C54-TiSi_2的结构与衬底和温度的关系,我们认为Si(111)衬底的对称性以及比较高的退火温度对C54-TiSi_2纳米岛的形成起了关键作用。对不同大小的纳米岛的输运性质的研究,阐述了随着TiSi_2纳米岛的长大,纳米岛与衬底Si之间的接触由整流接触向欧姆接触的转变。
     第四章在Si(111)7×7和Si(100)2×1表面蒸发了约0.005ML的C_(60)分子,然后用不同能量的波长为266nm的激光轰击样品表面,用STM探测激光作用前后表面形貌的变化。结果显示:能量比较小的激光就可以破坏C_(60)/Si(100)2×1的表面,而C_(60)/Si(111)7×7表面却稳定的多,直到激光能量加大到17.5mJ/pulse都没有完全破坏表面再构和上面吸附的C_(60)分子。我们认为C_(60)分子与不同的表面的
The preparation and characterizations of the nanostructures are always the main work of nanoscience and nanotechnology. And a family of Scanning Probe Microscopes afford powerful implements for nanoscience and nanotechnology. It is widely accepted that scanning probe microscopes heralded the emergence of nanoscience and nanotechnology.
    As a excellent preparation technique for films and nanostructures, the laser ablation technique attaches more and more interest because its wide applications in scientific research field and industry.
    In our work, we employed scanning probe microscopes, including STM and AFM, to study the surface morphologies and transport properties of the nanostructures prepared using laser ablation technique. We will expatiate our work as following.
    In Chapter 1, we firstly introduced the techniques for nanostrucure fabrications and the development of scanning probe microscopy simply. Then we overviewed the evolutions in the researches of TiO_2 and TiSi_2, educing our aim of the thesis.
    In Chapter 2, we simply introduced the constructions of the ultra-high vacuum system and the VT STM system, and the main amelioration on the compound instruments. It is the preparing stage for our work.
    In Chapter 3, we present the preparation of C54 TiSi_2 nanoislands on Si(111) via high temperature annealing the TiO_2 thin films deposited by pulsed laser ablation. After being annealed at 850℃ for about 4 h, the C54 TiSi_2 nanoislands formed on the Si(111)7×7 surface. The surface morphologies and the current-voltage characteristics of the as-deposited sample and the annealed sample were studied using a homemade scanning tunnelling microscope. The X-ray diffraction patterns and the X-ray photoelectron spectroscopy spectra indicate that the nanoscaled islands are in C54-TiSi2 phase. The formation of the nanoislands is assigned to the reaction between the titanium oxide and the Si(111) substrate at 850℃ and the symmetry of the substrates. Then we discussed the transformation of the contact mode between the
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