CVD金刚石膜化学机械抛光液的研制
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摘要
金刚石具有优异的机械性能、热力学性能、光学性能、声学性能、半导体性能及化学惰性,作为一种全方位的多功能材料,在诸多领域具有非常广阔的应用前景。尽管CVD金刚石膜的问世缓解了天然金刚石储量极少和价格昂贵的问题,但它表面质量太差,很多情况下难以直接使用。因此金刚石膜的抛光技术已成为扩大金刚石膜应用的关键技术之一。
     在过去的近二十年中,大量的学者和工程人员对金刚石膜的抛光进行了深入的研究,探讨了多种抛光方法,建立了多种理论模型,取得了丰硕的研究成果。但这些抛光方法所能达到的表面粗糙度Ra停留在亚微米级,比如:电火花抛光、热化学抛光等,而且容易对金刚石膜的表面造成损伤,缺少一种超精密低损伤的抛光技术。因此学者们对于CVD金刚石膜的抛光技术的研究从未间断,不断涌现出新的理论和方法。
     本文采用一种化学机械抛光方法对CVD金刚石膜的抛光进行了研究,主要的研究内容和结论如下:
     (1)根据氧化还原电位选择10种氧化剂进行了抛光试验,研究了不同氧化剂对金刚石膜的材料去除率和表面粗糙度Ra的影响。根据试验结果,优选出了高锰酸钾作为抛光液的氧化剂。
     (2)选用硫酸、磷酸、三氯化铁等化学试剂作为添加剂进行了抛光对比试验,选择了材料去除率及表面粗糙度Ra均比较好的磷酸作为抛光液的添加剂。通过对磷酸的浓度进行优选,发现当磷酸的浓度为磷酸:去离子水=115ml:35ml时抛光效果最佳。
     (3)在确定了氧化剂和添加剂的基础上,对磨料的硬度、粒径进行了优选,试验结果表明:在粗加工时,采用粒径10μm的金刚石作为磨料,精加工时采用粒径2μm的碳化硼磨料可以获得最佳的效果。
     (4)对抛光盘的材料进行了优选,研究结果表明:在粗加工时宜采用耐磨损的碳化硼盘,而在精加工时宜采用硬度适中、载料能力强的玻璃盘。
     (5)最后通过正交试验研究了抛光的主要工艺参数,优化出了最佳工艺参数:抛光压力为0.35MPa,抛光盘转速为50r/min,配重块转速为70r/min,抛光温度为50℃。
     (6)采用优化工艺抛光后的金刚石膜表面,没有出现变质层或其他杂质,表面品质良好。
Diamond has excellent mechanical properties, thermodynamic properties, optical properties, acoustic properties, semiconductor performance and chemical inertness. As a full range of multi-functional material in many fields it has very broad application prospects. Although the advent of CVD diamond film has eased the matter of natural diamond's few reserves and valuableness, its poor surface quality makes it difficult to be used directly in many cases. So the diamond film's polishing has become one of the key technologies to expand its application.
     In the past nearly two decades, a large number of scholars and engineers have in-depth studied on the polishing diamond films, researched various polishing methods, established a wide range of theoretical models and yielded fruitful results of research. However, these methods such as: electrical discharge polishing thermo-chemical polishing, can achieve the polished surface roughness remaining in the sub-micron. And they are easy to cause damage layers on the diamond films" surface. It is lack of an ultra-precision and low-injury polishing method, so the scholars CVD have never stopped probing the diamond films' polishing technicses. There are emerging plenty of new theories and methods.
     In this paper, a CMP method has been studied, the main contents and conclusions of the study are as follows:
     (1) According to the oxidation-reduction potential, 10 kinds of antioxidants are used to polishing experiments. The effects of different oxidizer on the diamond films' materials removal and surface roughness have shown that potassium permanganate as the oxidizer is the best choice.
     (2) Some chemical reagents such as sulfuric acid, phosphoric acid, ferric chloride as the additive have been experimentized. Phosphoric acid has been as the additive for its better material removal rate and surface roughness. And the additive concentration is optimized, the experiment found that the best concentration is phosphoric acid phosphate: deionized water = 115ml: 35ml at the best polishing.
     (3) After the oxidizer and additives has been determined, the abrasive hardness and particle size are optimized, the results show that: in the rough machining process, 10μm diamond used as abrasive, in the finish machining process, 2μm boron carbide used as abrasive can get the best effect.
     (4) The lap material is optimized, and the results show that: in the rough machining process it should use the wear-resistant boron carbide dish, and in the finish machining process it should use glass dish which has moderate hardness, the ability of the material contained in.
     (5) Finally, the main technical parameters has been through the studied by Orthogonal experiment. The best technical parameters which have been optimized are that: the pressure is 0.35MPa, the speed of lap is 50r/min, the speed of up disk is 70r/min, the temperature is 50℃.
     (6) There is a good surface quality and no metamorphic layer deterionration or other impurities after polished by optimization of process.
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