基于量子点的超快极化全光开关及慢光特性研究
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摘要
全光通信一直以来是人们的梦想。它能突破当前光通信中必须使用部分电子器件而使得光通信速度受限即电子瓶颈的限制。这其中存在这两个技术难点：全光开关和全光缓存。量子点材料的出现,为人们解决上述问题提供了可能。本论文基于量子点的激子强限制作用及强非线性等特性,设计超快全光开关,研究量子点的慢光特性,为解决光通信中的电子瓶颈问题提供可能方案。主要工作包括以下几个方面。
(1)研究了量子点的金属气相沉积(MOCVD)生长技术。探讨了量子点的生长方法和生长工艺。研究了生长温度、沉积速率、沉积厚度、Ⅴ/Ⅲ流量比、覆盖层等条件对量子点生长的影响。通过实验优化了量子点的生长。初步得出了最佳生长条件为生长温度500℃、沉积速率0.074ML/s、沉积厚度1.7ML、Ⅴ/Ⅲ流量比为10。量子点密度达到5×109/cm2。
(2)设计了一种基于量子点的超快极化全光开关。利用传递矩阵方法计算了光开关的反射谱和对比度。分析了光开关对比度与控制光强的关系。分析了量子点驰豫速率即温度对光开关的影响。分析了量子点非均匀展宽对光开关对比度的影响。该光开关的对比度在不考虑非均匀展宽时,100周期量子点布拉格结构的光开关在泵浦光强为0.5MW/cm2可以达到930(30dB)；考虑非均匀展宽为20meV时,200周期量子点布拉格结构的光开关在泵浦光强为0.5MW/cm2可以达到350(25dB)。该光开关的理论开光时间可达ps量级。常温下工作稳定性,工作功率,对比度等参数优于同类型的量子阱光开关。
(3)研究了量子点中基于电磁感应透明的慢光。分析计算了量子点中双激子-激子级联系统中基于电磁感应透明的慢光。通过求解稳态下的密度矩阵方程,我们获得了量子点中双激子-激子级联系统中电磁感应透明频谱烧孔。分析了泵浦光强、双激子驰豫速率对吸收谱的影响,计算了系统的折射率色散。最后分析了双激子能量重整化对系统吸收谱和慢光系数的影响。发现在不考虑双激子能级重整化时,慢光系数可达到3000；考虑重整化时,慢光系数减小为2500,且需要更大的泵浦光强。研究表明,由于双激子和激子在量子点中受到较强的限制作用,激子和双激子的寿命也较长、驰豫速率较小,同量子阱相比,具有更好的温度稳定性。期望可以在室温下观察到该现象。是常温下实现慢光的又一途径,可用于实现光缓存。另外,我们还通过密度矩阵理论理论研究了双量子点中“Y”型能级结构中的慢光。该系统最突出的特点是可以实现双窗口慢光。我们分别在每个窗口获得0.002c和0.01c的慢光。而且,慢光的速度和带宽都可以通过外加电压来调节。该系统除了用来做光缓存器外,也可用来设计可调光开关、可调光陷波器等,具有较好的开发前景。
(4)研究了量子点中非电磁感应透明慢光。首先,我们分析计算了量子点在共振激发下,通过改变控制光强可实现从快光到慢光的连续转换。基于我们建立的简单二能级结构模型,采用密度矩阵方法计算了InGaAs/InGaAsP量子点的一阶和三阶吸收系数和折射率。我们研究了量子点中共振能量0.85eV附近的慢光和快光现象。当入射光强度小于临界强度时,量子点显示出快光特性,它起源于量子点的一阶吸收。当入射光强度超过临界强度时,量子点由于存在较大的三阶非线性而呈现出慢光特性。我们证明了量子点中的快光和慢光效应。它可能用于光通信中。接着,我们分析计算了非对称双量子点系统中基于双吸收的慢光特性。在两量子点共振频率的中间,显示出相对低折射率色散、宽带宽、适宜于光通信的特性。两量子点的共振频率的差异决定了慢光系数、吸收率和带宽。系统的带宽可以达到60G,并且信号光在1mm长度的色散材料中,相对于在真空中传输可以延迟许多脉冲宽度。模拟了光信号在其中的传输。信号光的延迟可以通过泵浦光强度来调制。
总之,本论文研究了基于量子点的超快极化全光开关和慢光,对未来实现全光通信具有一定的借鉴意义。
All-optical communication has been the dream of the people for a long time. Now, some electronic devices have to be used in the optical communication and optical communication speed is limited by them, i.e. electronic bottleneck, and all-optical communication can break through the restriction. In the all-optical communication, there are two technical difficulties:all-optical switching and all-optical buffer. The emergence of quantum dots, offers the possibility for people to solve the above problem. In this thesis, based on the strong restriction and strong nonlinearity in the quantum dots, we design ultrafast all optical switching and study the slow light in order to propose possible options to overcome the electronic bottleneck in the optical communication. The main content is as follows.
(1) The quantum dot metal organic chemical vapor deposition (MOCVD) growth technique is researched. The growth method and craft are studied. The growth conditions including growth temperature, deposition velocity, deposition thickness, V/III ratio, covering layer etc., are discussed. The growth of the quantum dot is optimized through the experiments. Finally, we preliminarily get the optimal growth condition:growth temperature of500℃, deposition velocity of0.074ML/s, deposition thickness of1.7ML, V/III ratio of10. Quantum dot density is about5×109/cm2.
(2) We design a type of ultrafast polarization all optical switching based on quantum dot. How the optical switching works is studied. The reflection spectrum and the contrast ratio of the optical switching are calculated by the transfer matrix method. The relation between the contrast ratio and the control light intensity is researched. The quantum dot relaxation rate, i.e. temperature influence on the optical switching is discussed. The optical switching dependence on the quantum dot inhomogeneous broadening is studied. Without considering the inhomogeneous broadening, for100periods of the Bragg-spaced structure contained uniform quantum dots, under the operation of control light intensity0.5MW/cm2, the optical switching contrast ratio can reach930(30dB). When considering the inhomogeneous broadening of20meV, for200periods of the Bragg-spaced structure contained uniform quantum dots, under the operation of control light intensity 0.5MW/cm2, the optical switching contrast ratio is up to350(25dB). The theory optical switching opening time is up to the order of ps. The room temperature operation stability, operation power, contrast ratio etc. are superior to the same type of quantum well optical switching.
(3) We study the slow light in the quantum dot based on electromagnetically induced transparency (EIT). Firstly, we calculated the slow light based on EIT in the quantum dot biexciton-exciton cascade system. By solving the density matrix equation in the steady state, we have obtained the EIT spectral hole burning in the quantum dot biexciton-exciton cascade system. We discuss the pump pulse intensity and biexciton relaxation rate influence on the absorption spectrum. We calculate the refractive index dispersion of the system. Finally, we consider the biexciton energy renormalization influence on the system absorption and the slow light. Without considering the renormalization, the slow factor is up to3000; when considering the renormalization, the slow factor is reduced to2500, and at the same time, it needs more pump pulse power. The study has shown that due to large confinement, long lifetime and low relaxation rate of the exciton and biexciton in the quantum dot, the system temperature stability is superior to the quantum well. It is expected to observe the phenomenon in the quantum dot at room temperature. It is another way to realize the slow light at room temperature and maybe used in the optical buffer. Secondly, we also theoretically study the slow light in the double quantum dots Y-shape level structure by the density matrix theory. The most prominent feature of the slow light is the double window transparency. We get0.002c and0.01c respectively in each window. What is more, we can tune the slow light factor and bandwidth by the applied voltage. In addition to application in the optical buffer, it can also be used in the tunable optical switch and tunable optical notch filter. It has a good development prospects.
(4) We study the slow light not based on the EIT. Firstly, under the resonant excitation of the control light, we find that we can achieve continuous conversion from fast to slow light by change of the control light intensity. We create a simple two-level structure model. We use the density matrix method to calculate the first-order and third-order absorption and refractive index of the InGaAs/InGaAsP quantum dot. We study the slow and fast light near the quantum dot resonance energy0.85eV. When the incident light intensity is less than the critical intensity, quantum dots show fast light properties, which originate from the first-order absorption of the quantum dots. When the incident light intensity exceeds the critical intensity, quantum dots show slow light properties due to the presence of large third-order absorption. We demonstrate the fast light and slow light effect in quantum dots. It may be applied in the optical communication. Secondly, we study slow light in the asymmetry double quantum dots based on double resonance. In the middle of the two quantum dots resonance energy, it shows relatively low refractive index dispersion, large bandwidth and suitable for optical communication. The difference of the two quantum dots resonance energy determines the absorption, slow factor and bandwidth. The system bandwidth can reach60G, and the signal pulse in the1mm dispersion material can be delayed for many pulse widths than in vacuum. We simulate the pulse transmits the dispersion material. The delay of the signal light can be modulated by the pump light intensity.
In a word, we study ultrafast polarization all optical switch and slow light based on quantum dot. It may be a consultation for the future all optical communication.
(1)研究了量子点的金属气相沉积(MOCVD)生长技术。探讨了量子点的生长方法和生长工艺。研究了生长温度、沉积速率、沉积厚度、Ⅴ/Ⅲ流量比、覆盖层等条件对量子点生长的影响。通过实验优化了量子点的生长。初步得出了最佳生长条件为生长温度500℃、沉积速率0.074ML/s、沉积厚度1.7ML、Ⅴ/Ⅲ流量比为10。量子点密度达到5×109/cm2。
(2)设计了一种基于量子点的超快极化全光开关。利用传递矩阵方法计算了光开关的反射谱和对比度。分析了光开关对比度与控制光强的关系。分析了量子点驰豫速率即温度对光开关的影响。分析了量子点非均匀展宽对光开关对比度的影响。该光开关的对比度在不考虑非均匀展宽时,100周期量子点布拉格结构的光开关在泵浦光强为0.5MW/cm2可以达到930(30dB)；考虑非均匀展宽为20meV时,200周期量子点布拉格结构的光开关在泵浦光强为0.5MW/cm2可以达到350(25dB)。该光开关的理论开光时间可达ps量级。常温下工作稳定性,工作功率,对比度等参数优于同类型的量子阱光开关。
(3)研究了量子点中基于电磁感应透明的慢光。分析计算了量子点中双激子-激子级联系统中基于电磁感应透明的慢光。通过求解稳态下的密度矩阵方程,我们获得了量子点中双激子-激子级联系统中电磁感应透明频谱烧孔。分析了泵浦光强、双激子驰豫速率对吸收谱的影响,计算了系统的折射率色散。最后分析了双激子能量重整化对系统吸收谱和慢光系数的影响。发现在不考虑双激子能级重整化时,慢光系数可达到3000；考虑重整化时,慢光系数减小为2500,且需要更大的泵浦光强。研究表明,由于双激子和激子在量子点中受到较强的限制作用,激子和双激子的寿命也较长、驰豫速率较小,同量子阱相比,具有更好的温度稳定性。期望可以在室温下观察到该现象。是常温下实现慢光的又一途径,可用于实现光缓存。另外,我们还通过密度矩阵理论理论研究了双量子点中“Y”型能级结构中的慢光。该系统最突出的特点是可以实现双窗口慢光。我们分别在每个窗口获得0.002c和0.01c的慢光。而且,慢光的速度和带宽都可以通过外加电压来调节。该系统除了用来做光缓存器外,也可用来设计可调光开关、可调光陷波器等,具有较好的开发前景。
(4)研究了量子点中非电磁感应透明慢光。首先,我们分析计算了量子点在共振激发下,通过改变控制光强可实现从快光到慢光的连续转换。基于我们建立的简单二能级结构模型,采用密度矩阵方法计算了InGaAs/InGaAsP量子点的一阶和三阶吸收系数和折射率。我们研究了量子点中共振能量0.85eV附近的慢光和快光现象。当入射光强度小于临界强度时,量子点显示出快光特性,它起源于量子点的一阶吸收。当入射光强度超过临界强度时,量子点由于存在较大的三阶非线性而呈现出慢光特性。我们证明了量子点中的快光和慢光效应。它可能用于光通信中。接着,我们分析计算了非对称双量子点系统中基于双吸收的慢光特性。在两量子点共振频率的中间,显示出相对低折射率色散、宽带宽、适宜于光通信的特性。两量子点的共振频率的差异决定了慢光系数、吸收率和带宽。系统的带宽可以达到60G,并且信号光在1mm长度的色散材料中,相对于在真空中传输可以延迟许多脉冲宽度。模拟了光信号在其中的传输。信号光的延迟可以通过泵浦光强度来调制。
总之,本论文研究了基于量子点的超快极化全光开关和慢光,对未来实现全光通信具有一定的借鉴意义。
All-optical communication has been the dream of the people for a long time. Now, some electronic devices have to be used in the optical communication and optical communication speed is limited by them, i.e. electronic bottleneck, and all-optical communication can break through the restriction. In the all-optical communication, there are two technical difficulties:all-optical switching and all-optical buffer. The emergence of quantum dots, offers the possibility for people to solve the above problem. In this thesis, based on the strong restriction and strong nonlinearity in the quantum dots, we design ultrafast all optical switching and study the slow light in order to propose possible options to overcome the electronic bottleneck in the optical communication. The main content is as follows.
(1) The quantum dot metal organic chemical vapor deposition (MOCVD) growth technique is researched. The growth method and craft are studied. The growth conditions including growth temperature, deposition velocity, deposition thickness, V/III ratio, covering layer etc., are discussed. The growth of the quantum dot is optimized through the experiments. Finally, we preliminarily get the optimal growth condition:growth temperature of500℃, deposition velocity of0.074ML/s, deposition thickness of1.7ML, V/III ratio of10. Quantum dot density is about5×109/cm2.
(2) We design a type of ultrafast polarization all optical switching based on quantum dot. How the optical switching works is studied. The reflection spectrum and the contrast ratio of the optical switching are calculated by the transfer matrix method. The relation between the contrast ratio and the control light intensity is researched. The quantum dot relaxation rate, i.e. temperature influence on the optical switching is discussed. The optical switching dependence on the quantum dot inhomogeneous broadening is studied. Without considering the inhomogeneous broadening, for100periods of the Bragg-spaced structure contained uniform quantum dots, under the operation of control light intensity0.5MW/cm2, the optical switching contrast ratio can reach930(30dB). When considering the inhomogeneous broadening of20meV, for200periods of the Bragg-spaced structure contained uniform quantum dots, under the operation of control light intensity 0.5MW/cm2, the optical switching contrast ratio is up to350(25dB). The theory optical switching opening time is up to the order of ps. The room temperature operation stability, operation power, contrast ratio etc. are superior to the same type of quantum well optical switching.
(3) We study the slow light in the quantum dot based on electromagnetically induced transparency (EIT). Firstly, we calculated the slow light based on EIT in the quantum dot biexciton-exciton cascade system. By solving the density matrix equation in the steady state, we have obtained the EIT spectral hole burning in the quantum dot biexciton-exciton cascade system. We discuss the pump pulse intensity and biexciton relaxation rate influence on the absorption spectrum. We calculate the refractive index dispersion of the system. Finally, we consider the biexciton energy renormalization influence on the system absorption and the slow light. Without considering the renormalization, the slow factor is up to3000; when considering the renormalization, the slow factor is reduced to2500, and at the same time, it needs more pump pulse power. The study has shown that due to large confinement, long lifetime and low relaxation rate of the exciton and biexciton in the quantum dot, the system temperature stability is superior to the quantum well. It is expected to observe the phenomenon in the quantum dot at room temperature. It is another way to realize the slow light at room temperature and maybe used in the optical buffer. Secondly, we also theoretically study the slow light in the double quantum dots Y-shape level structure by the density matrix theory. The most prominent feature of the slow light is the double window transparency. We get0.002c and0.01c respectively in each window. What is more, we can tune the slow light factor and bandwidth by the applied voltage. In addition to application in the optical buffer, it can also be used in the tunable optical switch and tunable optical notch filter. It has a good development prospects.
(4) We study the slow light not based on the EIT. Firstly, under the resonant excitation of the control light, we find that we can achieve continuous conversion from fast to slow light by change of the control light intensity. We create a simple two-level structure model. We use the density matrix method to calculate the first-order and third-order absorption and refractive index of the InGaAs/InGaAsP quantum dot. We study the slow and fast light near the quantum dot resonance energy0.85eV. When the incident light intensity is less than the critical intensity, quantum dots show fast light properties, which originate from the first-order absorption of the quantum dots. When the incident light intensity exceeds the critical intensity, quantum dots show slow light properties due to the presence of large third-order absorption. We demonstrate the fast light and slow light effect in quantum dots. It may be applied in the optical communication. Secondly, we study slow light in the asymmetry double quantum dots based on double resonance. In the middle of the two quantum dots resonance energy, it shows relatively low refractive index dispersion, large bandwidth and suitable for optical communication. The difference of the two quantum dots resonance energy determines the absorption, slow factor and bandwidth. The system bandwidth can reach60G, and the signal pulse in the1mm dispersion material can be delayed for many pulse widths than in vacuum. We simulate the pulse transmits the dispersion material. The delay of the signal light can be modulated by the pump light intensity.
In a word, we study ultrafast polarization all optical switch and slow light based on quantum dot. It may be a consultation for the future all optical communication.
引文
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