基于共振隧穿器件RTD的二值和三值电路研究与设计
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摘要
随着集成电路的发展以及器件特征尺寸的不断减小,传统的工艺尺寸已经逐渐不能满足跟器件尺寸密切相关的超大规模集成电路VLSI的发展要求,硅片技术迅速发展的势头有可能在十年内(甚至更短的时间)放慢甚至完全停顿下来。为了更大程度提高电路的集成度,使它继续按照摩尔定律和等比例缩小规律发展下去,就必须在器件工艺方面取得更大的突破。共振隧穿器件RTD (Resonant Tunneling Diode)是目前研究得最为充分及热门的量子器件之一,其微分负阻NDR (Negative differential Resistance)的特性使得RTD天生具有超高速、超高频、超高集成度、高效低功耗等优点,不仅在数字电路中具有广泛的应用范围,在射频RF电路中也得到了高度的重视,在未来VLSI领域有着良好的应用前景。本研究课题将以共振隧穿二极管RTD为核心器件,在二值逻辑和多值逻辑领域对具有各种功能的共振隧穿电路进行研究、设计、分析和实现。
文章首先构建了二值共振隧穿电路中的基本逻辑运算单元。在传统数字电路开关-信号代数理论基础上提出了适用于共振隧穿电路的翻转-传输理论,建立了翻转-传输代数系统,用单稳双稳转换逻辑单元MOBILE (Monostable Bistabel Transition Logic Element)实现了两种联结运算的基本电路结构,结合3-level卡诺图,就可以像传统数字电路这样把简单方法运用到共振隧穿基本逻辑运算单元的设计中。运用翻转-传输理论,不仅使得共振隧穿电路的设计更简单灵活,而且提出了共振隧穿电路设计的理论基础和系统的方法。
触发器是存储电路的核心,文章提出了二值RTD触发器的两种设计方法,可分别用MOBILE单元和共振隧穿RS锁存单元来设计JK触发器和D触发器,丰富了共振隧穿触发器的种类,弥补了只能用MOBILE来设计RTD触发器的单一性。
文章还分析了共振隧穿电路中的开关序列工作原理,提出基于RTD电路的开关模型,以该模型和开关序列工作原理为基础,实现了三值逻辑运算单元的设计,并对现有的三值RTD电路进行了改进。
在三值触发器电路中,文章以文字运算为核心,提出了基于文字电路的三值触发器设计方法,实现了具有三轨输出结构的D触发器并具有同步预先置位复位功能。
此外,文章对共振隧穿电路的可测试性设计也进行了初步的探讨。以电路故障中最常见的短路故障和开路故障为主,分析了共振隧穿电路中的各种物理故障并建立了故障模型,设计了测试网络,根据不同的测试向量,可分别用于测试二值和三值共振隧穿电路故障。
最后,在总结全文的基础上,提出了本学位论文尚未完成和有待进一步研究和探索的一些问题。
With the development of integrated circuit manufacturing techniques, the characteristic dimension (CD) of devices has been decreased to nanometer scale, the CD of traditional technologies could not satisfy the requirements of VLSI gradually, which is related to the CD of the devices closely. So the development of silicon technology will slow down even stop in the next ten years or much shorter time if these problems could not be solved. In order to enhance the integration greatly, make it continue to follow Moore's Law and scaling rule, it must achieve greater breakthrough in devices. Resonant Tunneling Diode (RTD) is one of the most popular quantum devices in recent researches with the characteristics of ultra-high-speed, ultra-high-frequency, ultra-high-integration density, high efficiency and low power loss. Its negative differential resistance (NDR) feature makes it have broad application area in digital circuits and RF circuits, and reveals a very important application prospect in VLSI in the future. It will study, design, analyze and realize several kinds of resonant tunneling circuits in binary logic and multiple-valued logic region based on RTD in this paper.
Firstly, it realizes the binary RTD logic operation units, In binary RTD circuits, it does not have a systematic design method like the traditional digital circuits, especially in the basic logic units design, it cannot use simple design methods such as Karnaugh map or truth table. So, a switch-transmission algebra theory applied to resonant tunneling circuits is proposed based on both the conventional digital switch-signal theory and the characteristic of resonant tunneling devices. An algebra system describing the switch-transmission logic of resonant tunneling is established by adding two types of resonant tunneling correlation operations to the algebra system for the conventional digital ICs. The corresponding basic circuit structures of the correlation operations can be realized by MOBILE units. Then the method to design resonant tunneling circuits by using 3-level Karnaugh map and its applications are discussed in details. It makes the circuit design more flexible and offers an improved fundamental theory and systemic design way for resonant tunneling circuits based on logic unit design.
Flip-flop is the key part of memory circuits. It has two ways for binary RTD flip-flops by using MOBILE and RS flip-flop to design JK flip-flop and D flip-flop. It not only riches the types of resonant tunneling flip-flops, but also makes up the monotone by only using MOBILE to design RTD flip-flop.
It also analyzes the theory of switching sequence, proposes the switching model of RTD circuit, based on the model and the switching sequence theory, the ternary RTD logic operation units are designed and improved.
In ternary RTD flip-flop, it proposes the way to design ternary flip-flop and realizes the RTD D flip-flop with three-output track based on the literal operation. The ternary D flip-flop circuit has the functions with synchronous pre-set and pre-reset.
The physical faults are analyzed and the testability design methods are proposed for RTD circuits based on the stuck faults analysis and stuck faults model, which take MOBILE and ternary RTD quantizer as examples. By setting different input and testing signals, it generates different testing vectors, and can detect all the open circuit faults and short circuit faults in RTD circuits.
Finally, this dissertation concludes with a perspective of further research on low power, multiple-threshold neural network and the process based on the InGaAs/AlAs/InP RTD.
文章首先构建了二值共振隧穿电路中的基本逻辑运算单元。在传统数字电路开关-信号代数理论基础上提出了适用于共振隧穿电路的翻转-传输理论,建立了翻转-传输代数系统,用单稳双稳转换逻辑单元MOBILE (Monostable Bistabel Transition Logic Element)实现了两种联结运算的基本电路结构,结合3-level卡诺图,就可以像传统数字电路这样把简单方法运用到共振隧穿基本逻辑运算单元的设计中。运用翻转-传输理论,不仅使得共振隧穿电路的设计更简单灵活,而且提出了共振隧穿电路设计的理论基础和系统的方法。
触发器是存储电路的核心,文章提出了二值RTD触发器的两种设计方法,可分别用MOBILE单元和共振隧穿RS锁存单元来设计JK触发器和D触发器,丰富了共振隧穿触发器的种类,弥补了只能用MOBILE来设计RTD触发器的单一性。
文章还分析了共振隧穿电路中的开关序列工作原理,提出基于RTD电路的开关模型,以该模型和开关序列工作原理为基础,实现了三值逻辑运算单元的设计,并对现有的三值RTD电路进行了改进。
在三值触发器电路中,文章以文字运算为核心,提出了基于文字电路的三值触发器设计方法,实现了具有三轨输出结构的D触发器并具有同步预先置位复位功能。
此外,文章对共振隧穿电路的可测试性设计也进行了初步的探讨。以电路故障中最常见的短路故障和开路故障为主,分析了共振隧穿电路中的各种物理故障并建立了故障模型,设计了测试网络,根据不同的测试向量,可分别用于测试二值和三值共振隧穿电路故障。
最后,在总结全文的基础上,提出了本学位论文尚未完成和有待进一步研究和探索的一些问题。
With the development of integrated circuit manufacturing techniques, the characteristic dimension (CD) of devices has been decreased to nanometer scale, the CD of traditional technologies could not satisfy the requirements of VLSI gradually, which is related to the CD of the devices closely. So the development of silicon technology will slow down even stop in the next ten years or much shorter time if these problems could not be solved. In order to enhance the integration greatly, make it continue to follow Moore's Law and scaling rule, it must achieve greater breakthrough in devices. Resonant Tunneling Diode (RTD) is one of the most popular quantum devices in recent researches with the characteristics of ultra-high-speed, ultra-high-frequency, ultra-high-integration density, high efficiency and low power loss. Its negative differential resistance (NDR) feature makes it have broad application area in digital circuits and RF circuits, and reveals a very important application prospect in VLSI in the future. It will study, design, analyze and realize several kinds of resonant tunneling circuits in binary logic and multiple-valued logic region based on RTD in this paper.
Firstly, it realizes the binary RTD logic operation units, In binary RTD circuits, it does not have a systematic design method like the traditional digital circuits, especially in the basic logic units design, it cannot use simple design methods such as Karnaugh map or truth table. So, a switch-transmission algebra theory applied to resonant tunneling circuits is proposed based on both the conventional digital switch-signal theory and the characteristic of resonant tunneling devices. An algebra system describing the switch-transmission logic of resonant tunneling is established by adding two types of resonant tunneling correlation operations to the algebra system for the conventional digital ICs. The corresponding basic circuit structures of the correlation operations can be realized by MOBILE units. Then the method to design resonant tunneling circuits by using 3-level Karnaugh map and its applications are discussed in details. It makes the circuit design more flexible and offers an improved fundamental theory and systemic design way for resonant tunneling circuits based on logic unit design.
Flip-flop is the key part of memory circuits. It has two ways for binary RTD flip-flops by using MOBILE and RS flip-flop to design JK flip-flop and D flip-flop. It not only riches the types of resonant tunneling flip-flops, but also makes up the monotone by only using MOBILE to design RTD flip-flop.
It also analyzes the theory of switching sequence, proposes the switching model of RTD circuit, based on the model and the switching sequence theory, the ternary RTD logic operation units are designed and improved.
In ternary RTD flip-flop, it proposes the way to design ternary flip-flop and realizes the RTD D flip-flop with three-output track based on the literal operation. The ternary D flip-flop circuit has the functions with synchronous pre-set and pre-reset.
The physical faults are analyzed and the testability design methods are proposed for RTD circuits based on the stuck faults analysis and stuck faults model, which take MOBILE and ternary RTD quantizer as examples. By setting different input and testing signals, it generates different testing vectors, and can detect all the open circuit faults and short circuit faults in RTD circuits.
Finally, this dissertation concludes with a perspective of further research on low power, multiple-threshold neural network and the process based on the InGaAs/AlAs/InP RTD.
引文
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