基于TSV的MEMS圆片级真空封装关键技术的研究
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摘要
微机电系统(Micro Electro Mechanical System, MEMS)是将微机械元件、微型传感器、微型执行器、信号处理与控制电路等集成于一体的微系统。很多MEMS器件,如陀螺仪、加速度传感器和谐振器等都需要采用真空封装来降低机械运动部件运动时气体的阻尼,提高器件的品质因数,从而提高器件的性能。目前国内外MEMS真空封装技术仍然不是非常成熟,还存在高成本、低可靠性等问题。因此MEMS真空封装是一个急需重点研究的课题。硅通孔(Through Silicon Via, TSV)技术是一种应用于高密度三维封装中的新兴互连技术。本文提出了一种MEMS真空封装的结构和工艺,根据MEMS圆片级真空封装的要求和TSV技术的特点,将TSV技术应用于MEMS圆片级真空封装中。研究的主要内容和创新点如下:
(1)将TSV技术运用于MEMS圆片级真空封装中;
(2)研究中比较几种圆片键合工艺的特点,结合项目要求,完成了金硅键合方案拟定、结构设计、工艺流程的设计以及掩膜版图形设计等设计工作;并完成工艺的制作,包括光刻、键合腔体的腐蚀以及键合工艺,并通过多次试验优化键合工艺参数;
(3)研究TSV技术的特点,根据MEMS圆片级真空封装的特殊性和要求完成适用于MEMS圆片级真空封装的TSV的工艺的设计,并完成TSV工艺的制作,包括通孔刻蚀、绝缘层的制作、金属薄膜沉积和电镀填充等,最后通过多次试验优化工艺参数;
(4)针对封装腔体内部的真空度变化和实时检测的问题,提出薄膜热敏电阻即皮拉尼计的方案,通过设计与计算得到皮拉尼计关键结构尺寸,完成皮拉尼计的加工,最后对皮拉尼计的特性进行了实验研究。
(5)对本文中完成的封装进行检测和评价。包括粗检漏和细检漏两种不同的泄漏率的检测和键合强度的检测。
MEMS (Micro Electro Mechanical System) is a micro system that integrate micro mechanical element, micro sensor, micro actuator and signal processing&control circuit. Many MEMS devices, like accelerometer, gyroscope and resonator, need vacuum packaging in order to reduce the damping of mechanical part moving, improve quality factor and increase property of device as well. However, development in MEMS vacuum packaging at home and abroad is not mature. So MEMS vacuum packaging is a project that in dire need to be researched on. TSV (Through Silicon Via) is a new interconnected technology that used in high density 3-dimensional packaging. A new structure and technique of MEMS vacuum packaging is proposed. TSV technique is used in MEMS wafer level vacuum packaging based on the need of wafer level vacuum packaging and characteristics of TSV. The detailed contents for this article are as follows:
(1) TSV technology used in MEMS wafer level vacuum packaging is proposed.
(2) According to the project need, the characteristics of several wafer bonding processes are compared. The structural design, process design and mask pattern design of Au-Si bonding scheme are completed. The processes of lithography, cavity etching and Au-Si bonding are completed as well. The Au-Si boding process parameters are optimized by multiple tests.
(3) The characteristic of TSV is researched. TSV process design is completed based on the need and particularity of MEMS wafer level vacuum packaging. The processes of TSV technique including through-hole etching, insulating layer manufacture, metal film deposition and electroplating filling are completed as well, and the electroplating filling process parameters are optimized by multiple tests.
(4) A scheme using film resistor (pirani gage) is propounded to resolve the problem of vacuum changes inside package and real Time monitoring. The dimension of pirani gage is received by structural design and calculation. Pirani gage manufacture and the research on characteristics of pirani gage are completed.
(5) The vacuum packaging quality of this article are tested and evaluated, including leakage rate test (including rough test and accurate test) and bonding strength test.
(1)将TSV技术运用于MEMS圆片级真空封装中;
(2)研究中比较几种圆片键合工艺的特点,结合项目要求,完成了金硅键合方案拟定、结构设计、工艺流程的设计以及掩膜版图形设计等设计工作;并完成工艺的制作,包括光刻、键合腔体的腐蚀以及键合工艺,并通过多次试验优化键合工艺参数;
(3)研究TSV技术的特点,根据MEMS圆片级真空封装的特殊性和要求完成适用于MEMS圆片级真空封装的TSV的工艺的设计,并完成TSV工艺的制作,包括通孔刻蚀、绝缘层的制作、金属薄膜沉积和电镀填充等,最后通过多次试验优化工艺参数;
(4)针对封装腔体内部的真空度变化和实时检测的问题,提出薄膜热敏电阻即皮拉尼计的方案,通过设计与计算得到皮拉尼计关键结构尺寸,完成皮拉尼计的加工,最后对皮拉尼计的特性进行了实验研究。
(5)对本文中完成的封装进行检测和评价。包括粗检漏和细检漏两种不同的泄漏率的检测和键合强度的检测。
MEMS (Micro Electro Mechanical System) is a micro system that integrate micro mechanical element, micro sensor, micro actuator and signal processing&control circuit. Many MEMS devices, like accelerometer, gyroscope and resonator, need vacuum packaging in order to reduce the damping of mechanical part moving, improve quality factor and increase property of device as well. However, development in MEMS vacuum packaging at home and abroad is not mature. So MEMS vacuum packaging is a project that in dire need to be researched on. TSV (Through Silicon Via) is a new interconnected technology that used in high density 3-dimensional packaging. A new structure and technique of MEMS vacuum packaging is proposed. TSV technique is used in MEMS wafer level vacuum packaging based on the need of wafer level vacuum packaging and characteristics of TSV. The detailed contents for this article are as follows:
(1) TSV technology used in MEMS wafer level vacuum packaging is proposed.
(2) According to the project need, the characteristics of several wafer bonding processes are compared. The structural design, process design and mask pattern design of Au-Si bonding scheme are completed. The processes of lithography, cavity etching and Au-Si bonding are completed as well. The Au-Si boding process parameters are optimized by multiple tests.
(3) The characteristic of TSV is researched. TSV process design is completed based on the need and particularity of MEMS wafer level vacuum packaging. The processes of TSV technique including through-hole etching, insulating layer manufacture, metal film deposition and electroplating filling are completed as well, and the electroplating filling process parameters are optimized by multiple tests.
(4) A scheme using film resistor (pirani gage) is propounded to resolve the problem of vacuum changes inside package and real Time monitoring. The dimension of pirani gage is received by structural design and calculation. Pirani gage manufacture and the research on characteristics of pirani gage are completed.
(5) The vacuum packaging quality of this article are tested and evaluated, including leakage rate test (including rough test and accurate test) and bonding strength test.
引文
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[30] B. H. Stark, K. Najafi. A low-temperature thin-film electroplated metal vacuum package. Microelectromechanical Systems, 2004, 13(2): 147-157.
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[39] C. S. Premachandran, N. Rangnathan, S.Mohanraj, etal. A Vertical Wafer Level Packaging Using Through Hole Filled Via Interconnect by Lift Off Polymer Method forMEMS and 3D Stacking Applications. Electronic Components and Technology Conference, 2005: 1094-1098.
[40] Yuhan Cao, Wenguo Ning, Le Luo. Wafer-Level Package With Simultaneous TSV Connection and Cavity Hermetic Sealing by Solder Bonding for MEMS Device. Electronics Packaging Manufacturing. 2009, 32(3): 125-132.
[41]李志伟.(100)、(110)硅片湿法腐蚀各项异性腐蚀特性研究.武汉理工大学硕士学位论文, 2008, 33-35.
[42]陈明祥,易新建,刘胜等.基于共晶的MEMS芯片键合技术及其应用.半导体光电. 2004, 25(6): 484-488.
[43]甘志银. MEMS器件真空封装的研究.华中科技大学博士学位论文, 2008, 87-95.
[44] MSD Test Method Standard Mieroeireuits. MIL-STD-883E. Au-Si eutectic bonding technology for MEMS device. USA:MIL-STD, 1998.
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[2]刘光辉,亢春梅. MEMS技术的现状和发展趋势.传感器技术, 2001, 20(1): 52-56.
[3]陈思远. MEMS气体压力传感器的系统级封装(SiP)技术研究.南昌大学硕士学位论文, 2007, 2-5.
[4] D. Sparks, L. Jordan, J. Frazee. Flexible vacuum packaging method for resonating micromachines. Sensors and Actuators, 1996, 55: 179-185.
[5] A. A. Seshia, M. Palaniapan, T. A. Roessig, etal. A vacuum packaged surface micro-machined resonant accelerometer. Microelectromechanical Systems, 2002, 11(6): 784-793.
[6] S. H. Choa. Reliability of vacuum packaged MEMS gyroscopes. Microelectronics and Reliability, 2005, 45(2): 361-369.
[7]汪学方,林栋,甘志银等. MEMS器件真空封装工艺、装备及真空度检测的研究.中国机械工程, 2007, 18(8): 887-890.
[8]杨凯骏,王学军,井文丽等. MEMS器件真空封装工艺研究.半导体制造设备, 2010, 182(10): 5-7.
[9]施芹,苏岩,裘安萍等. MEMS陀螺仪器件级真空封装技术.光学精密工程, 2009, 17(8): 1987-1992.
[10]虞国平.反应离子刻蚀在穿透硅通孔封装技术中的应用研究.苏州大学硕士学位论文, 2009, 3-4.
[11] T. Pandhumsoporn. High-etch-rate deep anisotropic plasma etching of silicon for MEMS fabrication. Smart Structures and Materials, 1998, 3328.
[12] F. Larmer, A. Schilp. Method of Anisotropically Etching Silicon. U.S. Patent No.5501893, 1994.
[13]马睿.硅快速刻蚀技术的研究.西北工业大学硕士论文, 2009, 3-5.
[14] J. W. Jeong, B. K. Ju, D. J. Lee, etal. Tubeless packaging of field emission display usingglass to glass electrostatic bonding technology. Vacuum Microelectronics Conference, 1998, 42-43.
[15] L. Duck-Jung, J. Byeong-Kwon, L. Yun-Hi, etal. Glass-to-glass anodic bonding for high vacuum packaging of microelectronics and its stability. Micro Electro Mechanical Systems. 2000, 253-258.
[16] J. Mitchell, G. R. Lahiji, K. Najafi. Encapsulation of vacuum sensors in a wafer level package using a gold-silicon eutectic. Solid-State Sensors, Actuators and Microsystems, 2005, 1(1): 928-931.
[17] A. L. Tiensuu, J. A. Schweita, S. Johansson. In Situ Investigation of Precise Strength Micro Assembly Using Au-Si Eutectic Bonding. The 8th International Conference on Solid-State Sensors &Actuators&Eurosensors. 1995, 236~239.
[18] R. Gooch, T. Schimert, W. McCardel, etal. Wafer-level vacuum packaging for MEMS, Journal of Vacuum Science&Technology A. 1999, 17(4): 2295-2298.
[19] W. F. Huang, J. S. Shie, C. K. Lee, etal. Development of low-temperature wafer level vacuum packaging for microsensors. Design, Characterization, and Packaging for MEMS and Microelectronics. 1999, 478-485.
[20] D. Sparks, S. Massoud-Ansari, N. Najafi. Long-term evaluation of hermetically glass frit sealed silicon to Pyrex wafers with feedthroughs. Journal of Micromechanics and Microengineering. 2005, 15(8): 1560-1564.
[21] U. Gosele, M. Alexe, P. Kopperschmidt, etal. Semiconductor wafer bonding. A flexible approach to materials combinations in microelectronics; micromechanics and optoelectronics. Semiconductor Conference. 2002, 23-32.
[22] M. Chiao, L. Lin. Device-level hermetic packaging of microresonators by RTP aluminum-to-nitride bonding. Microelectromechanical Systems. 2006, 15(3): 515-522.
[23] H.Okada, T.Itoh, J.Fromel, etal. Room temperature vacuum sealing using surfaced activated bonding with Au thin films. The 13th International Conference on Solid-State Sensors, Actuators and Microsystems. 2005, 932-935.
[24] U Gosele, M. Alexe. Semiconductor wafer bonding, A flexible approach to materials combinations in microelectronics, Micromechanics and Optoelectronics. CAS '97 Proceedings. 1997, 23-32.
[25] H. Takagi, R. Maeda, Ando, etal. Room temperature silicon wafer direct bonding in vacuum by Ar beam irradiation. Micro Electro Mechanical Systems. Micro Electro Mechanical Systems, 1997, 191-196.
[26] C. Gillot, E. Lagoutte, P. L. Charvet, etal. Wafer Level Thin Film Encapsulation for MEMS. High Density Microsystem Design and Packaging and Component Failure Analysis, 2005, 1-4.
[27] C. Liu, Y. C. Tai. Sealing of micromachined cavities using chemical vapor deposition methods: characterization and optimization. Microelectromechanical Systems. 1999, 8(2): 135-145.
[28] S. Zurn, Q. Mei, C. Ye, etal. Sealed vacuum electronic devices by surface micromachining. Electron Devices Meeting, 1991, 205-208.
[29] K. D. Leedy, R. E. Strawser, R. Cortez. Thin-film encapsulated RF MEMS switches. Microelectromechanical Systems, 2007, 16(2): 304-309.
[30] B. H. Stark, K. Najafi. A low-temperature thin-film electroplated metal vacuum package. Microelectromechanical Systems, 2004, 13(2): 147-157.
[31]杨光育,杨建宁,韩依楠.电子产品3D-立体组装技术.电子工艺技术. 2008, 29(1): 33-34.
[32]陈贵宝,阎山.系统级封装技术现状与发展趋势.电子工艺技术, 2007, 28(5): 273-276.
[33] 3D IC&TSV report. Yole Development, 2007.
[34] Akito Yoshida. A study on package stacking process for package-on-package. Electronic Components and Technology Conference, 2006, 213 -219.
[35]童志义. 3DIC集成与硅通孔(TSV)互连.电子工业专用设备. 2009, 170(4): 27-34.
[36]廖凯.堆叠/3D封装的关键技术之一——硅片减薄.中国集成电路, 2007(5): 79-81.
[37]童志义.刻蚀设备的现状与发展趋势.电子工业专用设备. 2008, 161(7): 3-9.
[38] Arthur Keigler, Zhen Liu, Johannes Chiu.优化的TSV填充工艺降低成本.集成电路应用, 2009, 6: 39-41.
[39] C. S. Premachandran, N. Rangnathan, S.Mohanraj, etal. A Vertical Wafer Level Packaging Using Through Hole Filled Via Interconnect by Lift Off Polymer Method forMEMS and 3D Stacking Applications. Electronic Components and Technology Conference, 2005: 1094-1098.
[40] Yuhan Cao, Wenguo Ning, Le Luo. Wafer-Level Package With Simultaneous TSV Connection and Cavity Hermetic Sealing by Solder Bonding for MEMS Device. Electronics Packaging Manufacturing. 2009, 32(3): 125-132.
[41]李志伟.(100)、(110)硅片湿法腐蚀各项异性腐蚀特性研究.武汉理工大学硕士学位论文, 2008, 33-35.
[42]陈明祥,易新建,刘胜等.基于共晶的MEMS芯片键合技术及其应用.半导体光电. 2004, 25(6): 484-488.
[43]甘志银. MEMS器件真空封装的研究.华中科技大学博士学位论文, 2008, 87-95.
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