红外玻璃的微压印研究
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摘要
红外玻璃作为一类特殊的光学材料,在微光学方面起着越来越重要的作用。研究这种材料的热压印成型特性就成为比较重要的一项课题。压印技术具有成本低,重复性好,可控性强等一系列优点,逐渐被应用于微细加工的各个领域。在硫系锗红外玻璃的微压印研究方面,目前国内尚无报道,本论文主要对锗砷硒玻璃(Ge33As12Se55)热压印工艺及其成型特性进行了研究。
本论文在微压印技术的前景以及对国内外相关工作进行回顾的基础上,了解微压印技术的新思想、新方法,针对热压印技术展开了一系列研究。首先介绍了热压印工艺的相关理论及流程,设计并制备了用于热压印的硅模板,随后尝试采用热压工艺完成锗砷硒玻璃对硅模板的复制。热压印技术中,热压温度、压强、时间等影响热压印结果的重要因素。本论文采用单因素实验与正交实验研究相结合的方法,以锗砷硒玻璃为实验对象,湿法腐蚀技术制备硅模板,利用实验室加热设备以及自制加压系统进行实验研究,对锗砷硒玻璃的成型特性进行了初步探讨,总结出锗砷硒玻璃的热压印成型的规律,为锗砷硒玻璃热压印工艺的进一步研究打下基础。
本文研究表明,热压印技术是适于制备红外微光学元件的新方法。热压印实验中,当锗砷硒玻璃低于玻璃化温度时,施加压力无法产生变形；随着温度的增加锗砷硒玻璃加热到玻璃化温度以上,逐渐软化直至粘流态,此时在压力的作用下能迅速产生形变；此外,须保持一定的时间以克服锗砷硒玻璃的弹性回复和残余应力。在最佳工艺条件下,锗砷硒玻璃对硅模板的填充率为80.50%,对于精度要求较高微光学零件来说,复制精度偏低。产生这种现象的主要原因热压压强范围较小,受到了实验设备以及锗砷硒玻璃易碎性的限制。
Infrared glass, a special kind of optical materials, plays an increasingly important role in Micro-optics. Study on hot embossing of this material has become an important subject. Hot embossing fabrication of microstructures with low cost, high efficiency and parallel operation has been gradually applied to all areas of micro-machining. Currently, there is no report on the research of hot embossing technology of chalcogenide glass, and our work is mainly about Ge33As12Se55 glass hot embossing technology and the molding properties.
Based on the original thoughts and methods of micro-imprinting from current develop trend and related research at home and abroad, hot embossing was discussed, Si-V groove mould was designed and prepared, and the pattern of mould was tried to reduplicate to the Ge33As12Se55 glass with use of hot embossing technology. Temperature, pressure and bonding time which are important factors to affect the experiment results of hot embossing were analyzed by use of the single-factor experiment method and the orthogonal experiment method. Hot embossing experiments were taken out on the Ge33As12Se55 glass with the Si-V groove mould prepared by anisotropic wet etching, the heating equipment, as well as the self-made loading equipment. Characteristics of Ge33As12Se55 glass in hot embossing were summarized here, laying the groundwork for further research of hot embossing on the Ge33As12Se55 glass.
Our study shows that hot embossing technology is a new way to fabricate infrared micro-optical elements. When the temperature is lower than the glass transition temperature Tg, the Ge33As12Se55 glass has no deformation under pressure. As the temperature rises, the Ge33As12Se55 glass has gradual softening and it will be in viscous state. Then the Ge33As12Se55 glass will be shaped quickly under pressure, and it needs to keep pressure for several minutes to overcome the elastic recovery and residual stress of Ge33As12Se55 glass. Because the range of loading pressure is restricted by the loading equipment and the friability of Ge33As12Se55 glass, the fill rate to Si-V groove mould is 80.50% under the best experimental conditions, which can not meet the requirement of precise micro-optical components.
本论文在微压印技术的前景以及对国内外相关工作进行回顾的基础上,了解微压印技术的新思想、新方法,针对热压印技术展开了一系列研究。首先介绍了热压印工艺的相关理论及流程,设计并制备了用于热压印的硅模板,随后尝试采用热压工艺完成锗砷硒玻璃对硅模板的复制。热压印技术中,热压温度、压强、时间等影响热压印结果的重要因素。本论文采用单因素实验与正交实验研究相结合的方法,以锗砷硒玻璃为实验对象,湿法腐蚀技术制备硅模板,利用实验室加热设备以及自制加压系统进行实验研究,对锗砷硒玻璃的成型特性进行了初步探讨,总结出锗砷硒玻璃的热压印成型的规律,为锗砷硒玻璃热压印工艺的进一步研究打下基础。
本文研究表明,热压印技术是适于制备红外微光学元件的新方法。热压印实验中,当锗砷硒玻璃低于玻璃化温度时,施加压力无法产生变形；随着温度的增加锗砷硒玻璃加热到玻璃化温度以上,逐渐软化直至粘流态,此时在压力的作用下能迅速产生形变；此外,须保持一定的时间以克服锗砷硒玻璃的弹性回复和残余应力。在最佳工艺条件下,锗砷硒玻璃对硅模板的填充率为80.50%,对于精度要求较高微光学零件来说,复制精度偏低。产生这种现象的主要原因热压压强范围较小,受到了实验设备以及锗砷硒玻璃易碎性的限制。
Infrared glass, a special kind of optical materials, plays an increasingly important role in Micro-optics. Study on hot embossing of this material has become an important subject. Hot embossing fabrication of microstructures with low cost, high efficiency and parallel operation has been gradually applied to all areas of micro-machining. Currently, there is no report on the research of hot embossing technology of chalcogenide glass, and our work is mainly about Ge33As12Se55 glass hot embossing technology and the molding properties.
Based on the original thoughts and methods of micro-imprinting from current develop trend and related research at home and abroad, hot embossing was discussed, Si-V groove mould was designed and prepared, and the pattern of mould was tried to reduplicate to the Ge33As12Se55 glass with use of hot embossing technology. Temperature, pressure and bonding time which are important factors to affect the experiment results of hot embossing were analyzed by use of the single-factor experiment method and the orthogonal experiment method. Hot embossing experiments were taken out on the Ge33As12Se55 glass with the Si-V groove mould prepared by anisotropic wet etching, the heating equipment, as well as the self-made loading equipment. Characteristics of Ge33As12Se55 glass in hot embossing were summarized here, laying the groundwork for further research of hot embossing on the Ge33As12Se55 glass.
Our study shows that hot embossing technology is a new way to fabricate infrared micro-optical elements. When the temperature is lower than the glass transition temperature Tg, the Ge33As12Se55 glass has no deformation under pressure. As the temperature rises, the Ge33As12Se55 glass has gradual softening and it will be in viscous state. Then the Ge33As12Se55 glass will be shaped quickly under pressure, and it needs to keep pressure for several minutes to overcome the elastic recovery and residual stress of Ge33As12Se55 glass. Because the range of loading pressure is restricted by the loading equipment and the friability of Ge33As12Se55 glass, the fill rate to Si-V groove mould is 80.50% under the best experimental conditions, which can not meet the requirement of precise micro-optical components.
引文
[1]唐彬,王政,范有余,等.中红外玻璃的研究现状及发展[J].红外与激光工程,2008,37(3)：311-314.
[2]黄秋,陈亦庆,高志峰,等.红外导引头整流罩技术研究[J].应用光学,2009,30(5)：840-843.
[3]杨国光,沈亦兵,侯西云.微光学技术及其发展[J].红外与激光工程,2001,30(4)：157-162.
[4]陈弘达.微光电子集成系统芯片的研究进展[EB/OL].(2009-09-06) [2010-2-20] http:// www. docin.com/p-14258637.html.
[5]崔铮.微纳米加工技术及其应用综述[J].物理,2006,35(1)：34-39.
[6]章国明,邵会波.热压印刻蚀技术[J].纳米材料与应用,2005,2(5)：18-22.
[7]陈芳,高宏军,刘忠范.热压印刻蚀技术[J].微纳电子技术,2004,(10)：1-9.
[8]陈国荣,章向华.红外夜视仪用精密模压硫系玻璃研究进展[J].硅酸盐通报,2004,(1)：3-7.
[8]王小虎,薛建强,陶海征,等.硫系玻璃材料的研究进展[J].建材发展导向.2003,(2)：28-31.
[9]CURATU George,BINKLEY Brent,TINCH David, et al. Using molded chalcogenide glass technology to reduce cost in a compact wide-angle thermal imaging lens [J]. Opto-Electronics Review,2007,15(2):110-117.
[10]Vigreux-Bercovici, C. Bonhomme, E. Pradel, et al. A. Te-rich Ge-As-Se-Te bulk glasses and films for future IR-integrated optics [J]. Journal of Non-Crystalline Solids,2007,353: 1388-1391.
[11]Darren Freeman, Christian Grillet, Michael W. Lee. Chalcogenide glass photonic crystals[J]. Photonics and Nanostructures-Fundamentals and Applications,2008,6:3-11.
[12]Michael W. Lee, Christian Grillet, Cameron L.C. Smith, et al. Photosensitive post tuning of chalcogenide photonic crystal waveguides[J]. Optics Express,2007,15(3) 1278-1285.
[13]Amrita Prasad, Cong-Ji Zha, Rong-Ping Wang, et al. Properties of GexAsySe1-x-y glasses for all-optical signal processing[J]. Optics Express,2008,16(4):2804-2815.
[14]薛建强,徐曼,龚跃球,等.硫系玻璃的制备、特性及应用[J].光电子技术与信息,2003,16(4)：28-31.
[15]门洪,邬广建,李小英,等.硫系玻璃传感器及其试验研究[J].传感技术学报,2006,19(4)：1015-1019.
[16]温敏,塑料微流控芯片微通道热压成形及键合工艺研究[D].大连：大连理工大学,2005
[17]Shen, X. J. Pan, Li-Wei Lin. Microplastic embossing process:experimental and theoretical characterizations[J]. Sensors and Actuators A:Physical.2008,97-98:428-433.
[18]Yi-Je Juang, L. James Lee, Kurt W. Koelling. Hot Embossing in Microfabrication[J]. Polymer Engineering and Science,2002,42(3):539-551.
[19]Holger Becker, Ulf Heim. Hot embossing as a method for the fabrication of polymer high aspect ratio structures[J]. Sensors and Actuators A:Physical,2000,83(1-3):130-135.
[20]M. Heckele, W. Bacher, K. D. Muller. Hot embossing-The molding technique for plastic microstructures[J]. Microsystem Technologies,1998,4(3):122-124.
[21]Seddon, A. B. Pan, W. J. Furniss, D. Miller, et al. Fine embossing of chalcogenide glasses-a new fabrication route for photonic integrated circuits [J]. Journal of Non-Crystalline Solids,2008,352:2515-2520.
[22]Pan, W. J. Furniss, D. Rowe, H. Miller, C. A. Loni, et al. Fine embossing of chalcogenide glasses:First time submicron definition of surface embossed features [J]. Journal of Non-Crystalline Solids,2007,353:1302-1306.
[23]丁玉成,刘红忠,卢秉恒,等.下一代光刻技术——压印光刻[J].机械工程学报,2007,43(3)：1-7.
[24]王权岱,段玉岗,丁玉成,等.基于微压印成形的三维微电子机械系统制造新工艺[J].西安交通大学学报,2005,39(9)：946-949.
[25]尹磊,刘红忠,丁玉成,等.基于纳米压印技术的光伏器件微三维构型研究[J].传感技术学报,2006,19(5)：1455-1458.
[26]蒋维涛,丁玉成,卢秉恒,等.压印光刻中模具空间位姿的识别及仿真[J].西安交通大学学报,2007,4(1)：55-58.
[27]贺德建.纳米压印光刻技术原理与实验研究[D].武汉：华中科技大学,2004.
[28]胡晓峰.纳米热压印设备与试验研究[D].武汉：华中科技大学,2005.
[29]孙洪文,刘景全,陈迪,等.一种适于热压成型的新聚合物——PETG[J].塑料工业,2004,32(10)：59-63.
[30]孙洪文,刘景全,陈迪,等.正交法对DEM技术中模压工艺的优化研究[J].微细加工技术,2004,(3)：45-49.
[31]孙洪文.微纳压印关键技术研究[D].上海：上海交通大学,2007.
[32]顾盼.微纳压印技术的应用及抗粘涂层的研制[D].上海：上海交通大学,2007.
[33]Liu JunShan, Wang Liding, Liu Chong, Luo Yi.Hot embossing methods for Plastic micro channel fabrication[J].CHINESE JOURNAL OF MECHANICAL ENGINEERING,2006, 19(2):223-225
[34]徐敏,罗怡,王晓东,等.聚合物微结构热压成形温度有限元分析[J].传感技术学报,2006,19(5)：2015-2017.
[35]文伟力,左春柽,于建群.聚合物微流控芯片微通道模压成型分析[J].吉林大学学报(工学版),2006,36(5)：696-700.
[36]任永利,傅建中,陈子辰.微压印聚合物微流控芯片的传热分析研究[J].机械科学与技术,2005,24(11)：1358-1361.
[37]任永利.微压印聚合物微流控芯片的传热模型及实验研究[D].浙江：浙江大学,2005.
[38]王晓东,罗怡,刘冲.聚合物PMMA微流控芯片微通道热压成形工艺参数的确定[J].中国机械工程,2005,16(22)：2061-2063.
[39]朱学林,刘刚,田扬超.一种PMMA表面改性的热压键合方法研究[J].微细加工技术,2005,(4)：52-55.
[40]R.泽伦.非晶态固体物理学[M].黄昀等,译.北京大学出版社,1988：14-29
[41]徐敏.聚合物微流控芯片热压工艺及理论研究[D].大连：大连理工大学,2005.
[42]贺永.聚合物微热压过程理论及其装备技术研究[D].浙江：浙江大学,2007.
[43]LJ Heyderman, H Schift, C David. Flow behavior of thin polymer used for hot embossing[J]. Microelectronic Engineering.2000(54):229-245.
[44]杨帆.聚合物微流控芯片脱模过程研究[D].大连：大连理工大学,2007.
[45]罗塔尔·库格勒.微加工技术之现状[J].光机电信息,2008(2)：38-42.
[46]郝子宇.MEMS湿法腐蚀工艺的研究[D].河北：河北工业大学,2005.
[47]王涓.MEMS中单晶硅的湿法异向腐蚀特性的研究[D].南京：东南大学,2005.
[48]贾翠萍,董玮,徐宝琨.KOH溶液中(110)硅片腐蚀特性的研究[J].半导体技术,2005,30(6)：52-55.
[49]姜岩峰,黄庆安,吴文刚.硅在KOH中各向异性腐蚀的物理模型[J].半导体学报,2002,23(4)：434-439.
[50]李志伟.(100)、(110)基硅片各向异性腐蚀特性研究[D].武汉：武汉理工大学,2005.
[51]贾翠萍,董玮,周敬然.(110)硅基MEMS光开关光纤定位槽的设计[J].微细加工技术,2006,28(3)：45-48.
[52]沈桂芬,吴春瑜.各向异性腐蚀技术研究与分析[J].传感技术学报,2001,14(2)：140-146.
[53]王丰,吕平临,李敬文.硅各向异性腐蚀技术[J].黑龙江商学院学报,2000,16(2)：22-27.
[54]董玮,梁静秋,刘彩霞,等.体硅MOEMS阵列光开关的制作[J].半导体技术,2006,31(8)：53-55.
[55]储佳,马向阳,杨德仁,等.硅片清洗研究进展[J].半导体技术,2001.26(3)：17-19.
[56]马睿.硅快速深刻蚀技术的研究[D].西安：西安工业大学,2009.
[57]蔡长龙,马睿,周顺,等.Si材刻蚀速率的工艺研究[J].半导体技术,2008,33(10)：862-867.
[58]蔡长龙,马睿,刘卫国,等.硅深刻蚀中掩蔽层材料的研究[J].西安工业大学学报,2008,28(4)：307-311.
[59]雷莹.用于光纤阵列的Si-V型槽的制备[J].红外与激光工程,2002,31(5)：447-450.
[60]刘洋,陈才和,丁桂兰.高精度Si-V型槽的制备技术研究[J].天津大学学报,2003,32(4)：409-413.
[61]杨成惠.耦合用硅片V型槽的设计与制作[J].半导体光电,2000,21(z1)：73.
[62]石红春,杨海,赵永田,等.长波红外消色差锗砷硒玻璃的研制[J].激光与红外,2007,37(3)： 275-277.
[63]杨海,韩兆忠,褚乃林,等.锗砷硒玻璃的一些物理性质[J].广东微量元素科学,1998,5(2)：56-58.
[64]Duk Yong Choi, Steve Madden, Andrei Rode. Fabrication and Optical Characterization of Ge33As12Se55 (AMTIR-1) thin Film Waveguides[J].IEEE,2006:318-319.
[65]大九保信明.热分析的基础与分析.[EB/OL]SII · Nano technology株式会社[2009-12-1] http://siint.com.cn/pdf/column_01CH.pdf.
[2]黄秋,陈亦庆,高志峰,等.红外导引头整流罩技术研究[J].应用光学,2009,30(5)：840-843.
[3]杨国光,沈亦兵,侯西云.微光学技术及其发展[J].红外与激光工程,2001,30(4)：157-162.
[4]陈弘达.微光电子集成系统芯片的研究进展[EB/OL].(2009-09-06) [2010-2-20] http:// www. docin.com/p-14258637.html.
[5]崔铮.微纳米加工技术及其应用综述[J].物理,2006,35(1)：34-39.
[6]章国明,邵会波.热压印刻蚀技术[J].纳米材料与应用,2005,2(5)：18-22.
[7]陈芳,高宏军,刘忠范.热压印刻蚀技术[J].微纳电子技术,2004,(10)：1-9.
[8]陈国荣,章向华.红外夜视仪用精密模压硫系玻璃研究进展[J].硅酸盐通报,2004,(1)：3-7.
[8]王小虎,薛建强,陶海征,等.硫系玻璃材料的研究进展[J].建材发展导向.2003,(2)：28-31.
[9]CURATU George,BINKLEY Brent,TINCH David, et al. Using molded chalcogenide glass technology to reduce cost in a compact wide-angle thermal imaging lens [J]. Opto-Electronics Review,2007,15(2):110-117.
[10]Vigreux-Bercovici, C. Bonhomme, E. Pradel, et al. A. Te-rich Ge-As-Se-Te bulk glasses and films for future IR-integrated optics [J]. Journal of Non-Crystalline Solids,2007,353: 1388-1391.
[11]Darren Freeman, Christian Grillet, Michael W. Lee. Chalcogenide glass photonic crystals[J]. Photonics and Nanostructures-Fundamentals and Applications,2008,6:3-11.
[12]Michael W. Lee, Christian Grillet, Cameron L.C. Smith, et al. Photosensitive post tuning of chalcogenide photonic crystal waveguides[J]. Optics Express,2007,15(3) 1278-1285.
[13]Amrita Prasad, Cong-Ji Zha, Rong-Ping Wang, et al. Properties of GexAsySe1-x-y glasses for all-optical signal processing[J]. Optics Express,2008,16(4):2804-2815.
[14]薛建强,徐曼,龚跃球,等.硫系玻璃的制备、特性及应用[J].光电子技术与信息,2003,16(4)：28-31.
[15]门洪,邬广建,李小英,等.硫系玻璃传感器及其试验研究[J].传感技术学报,2006,19(4)：1015-1019.
[16]温敏,塑料微流控芯片微通道热压成形及键合工艺研究[D].大连：大连理工大学,2005
[17]Shen, X. J. Pan, Li-Wei Lin. Microplastic embossing process:experimental and theoretical characterizations[J]. Sensors and Actuators A:Physical.2008,97-98:428-433.
[18]Yi-Je Juang, L. James Lee, Kurt W. Koelling. Hot Embossing in Microfabrication[J]. Polymer Engineering and Science,2002,42(3):539-551.
[19]Holger Becker, Ulf Heim. Hot embossing as a method for the fabrication of polymer high aspect ratio structures[J]. Sensors and Actuators A:Physical,2000,83(1-3):130-135.
[20]M. Heckele, W. Bacher, K. D. Muller. Hot embossing-The molding technique for plastic microstructures[J]. Microsystem Technologies,1998,4(3):122-124.
[21]Seddon, A. B. Pan, W. J. Furniss, D. Miller, et al. Fine embossing of chalcogenide glasses-a new fabrication route for photonic integrated circuits [J]. Journal of Non-Crystalline Solids,2008,352:2515-2520.
[22]Pan, W. J. Furniss, D. Rowe, H. Miller, C. A. Loni, et al. Fine embossing of chalcogenide glasses:First time submicron definition of surface embossed features [J]. Journal of Non-Crystalline Solids,2007,353:1302-1306.
[23]丁玉成,刘红忠,卢秉恒,等.下一代光刻技术——压印光刻[J].机械工程学报,2007,43(3)：1-7.
[24]王权岱,段玉岗,丁玉成,等.基于微压印成形的三维微电子机械系统制造新工艺[J].西安交通大学学报,2005,39(9)：946-949.
[25]尹磊,刘红忠,丁玉成,等.基于纳米压印技术的光伏器件微三维构型研究[J].传感技术学报,2006,19(5)：1455-1458.
[26]蒋维涛,丁玉成,卢秉恒,等.压印光刻中模具空间位姿的识别及仿真[J].西安交通大学学报,2007,4(1)：55-58.
[27]贺德建.纳米压印光刻技术原理与实验研究[D].武汉：华中科技大学,2004.
[28]胡晓峰.纳米热压印设备与试验研究[D].武汉：华中科技大学,2005.
[29]孙洪文,刘景全,陈迪,等.一种适于热压成型的新聚合物——PETG[J].塑料工业,2004,32(10)：59-63.
[30]孙洪文,刘景全,陈迪,等.正交法对DEM技术中模压工艺的优化研究[J].微细加工技术,2004,(3)：45-49.
[31]孙洪文.微纳压印关键技术研究[D].上海：上海交通大学,2007.
[32]顾盼.微纳压印技术的应用及抗粘涂层的研制[D].上海：上海交通大学,2007.
[33]Liu JunShan, Wang Liding, Liu Chong, Luo Yi.Hot embossing methods for Plastic micro channel fabrication[J].CHINESE JOURNAL OF MECHANICAL ENGINEERING,2006, 19(2):223-225
[34]徐敏,罗怡,王晓东,等.聚合物微结构热压成形温度有限元分析[J].传感技术学报,2006,19(5)：2015-2017.
[35]文伟力,左春柽,于建群.聚合物微流控芯片微通道模压成型分析[J].吉林大学学报(工学版),2006,36(5)：696-700.
[36]任永利,傅建中,陈子辰.微压印聚合物微流控芯片的传热分析研究[J].机械科学与技术,2005,24(11)：1358-1361.
[37]任永利.微压印聚合物微流控芯片的传热模型及实验研究[D].浙江：浙江大学,2005.
[38]王晓东,罗怡,刘冲.聚合物PMMA微流控芯片微通道热压成形工艺参数的确定[J].中国机械工程,2005,16(22)：2061-2063.
[39]朱学林,刘刚,田扬超.一种PMMA表面改性的热压键合方法研究[J].微细加工技术,2005,(4)：52-55.
[40]R.泽伦.非晶态固体物理学[M].黄昀等,译.北京大学出版社,1988：14-29
[41]徐敏.聚合物微流控芯片热压工艺及理论研究[D].大连：大连理工大学,2005.
[42]贺永.聚合物微热压过程理论及其装备技术研究[D].浙江：浙江大学,2007.
[43]LJ Heyderman, H Schift, C David. Flow behavior of thin polymer used for hot embossing[J]. Microelectronic Engineering.2000(54):229-245.
[44]杨帆.聚合物微流控芯片脱模过程研究[D].大连：大连理工大学,2007.
[45]罗塔尔·库格勒.微加工技术之现状[J].光机电信息,2008(2)：38-42.
[46]郝子宇.MEMS湿法腐蚀工艺的研究[D].河北：河北工业大学,2005.
[47]王涓.MEMS中单晶硅的湿法异向腐蚀特性的研究[D].南京：东南大学,2005.
[48]贾翠萍,董玮,徐宝琨.KOH溶液中(110)硅片腐蚀特性的研究[J].半导体技术,2005,30(6)：52-55.
[49]姜岩峰,黄庆安,吴文刚.硅在KOH中各向异性腐蚀的物理模型[J].半导体学报,2002,23(4)：434-439.
[50]李志伟.(100)、(110)基硅片各向异性腐蚀特性研究[D].武汉：武汉理工大学,2005.
[51]贾翠萍,董玮,周敬然.(110)硅基MEMS光开关光纤定位槽的设计[J].微细加工技术,2006,28(3)：45-48.
[52]沈桂芬,吴春瑜.各向异性腐蚀技术研究与分析[J].传感技术学报,2001,14(2)：140-146.
[53]王丰,吕平临,李敬文.硅各向异性腐蚀技术[J].黑龙江商学院学报,2000,16(2)：22-27.
[54]董玮,梁静秋,刘彩霞,等.体硅MOEMS阵列光开关的制作[J].半导体技术,2006,31(8)：53-55.
[55]储佳,马向阳,杨德仁,等.硅片清洗研究进展[J].半导体技术,2001.26(3)：17-19.
[56]马睿.硅快速深刻蚀技术的研究[D].西安：西安工业大学,2009.
[57]蔡长龙,马睿,周顺,等.Si材刻蚀速率的工艺研究[J].半导体技术,2008,33(10)：862-867.
[58]蔡长龙,马睿,刘卫国,等.硅深刻蚀中掩蔽层材料的研究[J].西安工业大学学报,2008,28(4)：307-311.
[59]雷莹.用于光纤阵列的Si-V型槽的制备[J].红外与激光工程,2002,31(5)：447-450.
[60]刘洋,陈才和,丁桂兰.高精度Si-V型槽的制备技术研究[J].天津大学学报,2003,32(4)：409-413.
[61]杨成惠.耦合用硅片V型槽的设计与制作[J].半导体光电,2000,21(z1)：73.
[62]石红春,杨海,赵永田,等.长波红外消色差锗砷硒玻璃的研制[J].激光与红外,2007,37(3)： 275-277.
[63]杨海,韩兆忠,褚乃林,等.锗砷硒玻璃的一些物理性质[J].广东微量元素科学,1998,5(2)：56-58.
[64]Duk Yong Choi, Steve Madden, Andrei Rode. Fabrication and Optical Characterization of Ge33As12Se55 (AMTIR-1) thin Film Waveguides[J].IEEE,2006:318-319.
[65]大九保信明.热分析的基础与分析.[EB/OL]SII · Nano technology株式会社[2009-12-1] http://siint.com.cn/pdf/column_01CH.pdf.